Document Outline
- 1 FEATURES
- 2 APPLICATIONS
- 3 GENERAL DESCRIPTION
- 4 QUICK REFERENCE DATA
- 5 ORDERING INFORMATION
- 6 BLOCK DIAGRAM
- 7 PINNING
- 8 FUNCTIONAL DESCRIPTION
- 9 LIMITING VALUES
- 10 HANDLING
- 11 THERMAL CHARACTERISTICS
- 12 DC CHARACTERISTICS
- 13 AC CHARACTERISTICS
- 14 APPLICATION INFORMATION
- 15 PACKAGE OUTLINE
- 16 SOLDERING
- 17 DATA SHEET STATUS
- 18 DEFINITIONS
- 19 DISCLAIMERS
DATA SHEET
Preliminary specification
File under Integrated Circuits, IC01
2001 Nov 16
INTEGRATED CIRCUITS
TDA8512J
26 W BTL and 2
13 W SE or
4
13 W SE power amplifier
2001 Nov 16
2
Philips Semiconductors
Preliminary specification
26 W BTL and 2
13 W SE or
4
13 W SE power amplifier
TDA8512J
CONTENTS
1
FEATURES
2
APPLICATIONS
3
GENERAL DESCRIPTION
4
QUICK REFERENCE DATA
5
ORDERING INFORMATION
6
BLOCK DIAGRAM
7
PINNING
8
FUNCTIONAL DESCRIPTION
8.1
Mode select switch
8.2
Mode select
8.3
Built-in protection circuits
8.4
Short-circuit protection
9
LIMITING VALUES
10
HANDLING
11
THERMAL CHARACTERISTICS
12
DC CHARACTERISTICS
13
AC CHARACTERISTICS
14
APPLICATION INFORMATION
14.1
Input configuration
14.2
Output power
14.3
Power dissipation
14.4
Supply Voltage Ripple Rejection (SVRR)
14.5
Switch-on and switch-off
14.6
PCB layout and grounding
14.7
Typical performance characteristics
15
PACKAGE OUTLINE
16
SOLDERING
16.1
Introduction to soldering through-hole mount
packages
16.2
Soldering by dipping or by solder wave
16.3
Manual soldering
16.4
Suitability of through-hole mount IC packages
for dipping and wave soldering methods
17
DATA SHEET STATUS
18
DEFINITIONS
19
DISCLAIMERS
2001 Nov 16
3
Philips Semiconductors
Preliminary specification
26 W BTL and 2
13 W SE or
4
13 W SE power amplifier
TDA8512J
1
FEATURES
Requires very few external components
High output power
Low output offset voltage Bridge-Tied Load (BTL)
channel
Fixed gain
Good ripple rejection
Mode select switch: operating, mute and standby
Short-circuit safe to ground and across load
Low power dissipation in any short-circuit condition
Thermally protected
Reverse polarity safe
Electrostatic discharge protection
No switch-on and switch-off plops
Flexible leads
Low thermal resistance
Identical inputs: inverting and non-inverting.
2
APPLICATIONS
Multimedia systems
Active speaker systems (stereo with sub woofer or
QUAD).
3
GENERAL DESCRIPTION
The TDA8512J is an integrated class-B output amplifier in
a 17-lead Single-In-Line (SIL) power package. It contains
4
13 W Single Ended (SE) amplifiers of which two can be
used to configure a 26 W BTL amplifier.
4
QUICK REFERENCE DATA
5
ORDERING INFORMATION
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
General
V
P
supply voltage
6
15
18
V
I
ORM
repetitive peak output current
-
-
4
A
I
q(tot)
total quiescent current
-
80
mA
I
stb
standby current
-
0.1
100.0
A
BTL channel
P
o
output power
R
L
= 4
; THD = 10%
-
26
-
W
SVRR
supply voltage ripple rejection
46
-
-
dB
V
n(o)
noise output voltage
R
s
= 0
-
70
-
V
Z
i
input impedance
25
-
-
k
V
OO
DC output offset voltage
-
-
150
mV
SE channels
P
o
output power
THD = 10%
R
L
= 4
-
7.0
-
W
R
L
= 2
-
13.0
-
W
SVRR
supply voltage ripple rejection
46
-
-
dB
V
n(o)
noise output voltage
R
s
= 0
-
50
-
V
Z
i
input impedance
50
-
-
k
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
TDA8512J
DBS17P
plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)
SOT243-1
2001 Nov 16
4
Philips Semiconductors
Preliminary specification
26 W BTL and 2
13 W SE or
4
13 W SE power amplifier
TDA8512J
6
BLOCK DIAGRAM
handbook, full pagewidth
MODE
MGW426
OUT1
x1
VA
standby
switch
VP
VP1
VP2
mute
switch
standby
reference
voltage
5
13
mute switch
VA
power stage
mute switch
VA
power stage
6
8
14
mute switch
VA
power stage
18 k
18 k
15 k
15 k
mute switch
VA
Cm
18 k
18 k
Cm
Cm
Cm
power stage
10
12
2
7
11
SGND
GND1
GND2
OUT3
OUT4
OUT2
INV1
17
1
TDA8512J
mute
reference
voltage
input
reference
voltage
3
PROTECTIONS
thermal
short-circuit
4
RR
15
16
60
k
2
k
60
k
2
k
60
k
2
k
60
k
2
k
INV2
INV3
INV3
INV4
9
REF
Fig.1 Block diagram.
2001 Nov 16
5
Philips Semiconductors
Preliminary specification
26 W BTL and 2
13 W SE or
4
13 W SE power amplifier
TDA8512J
7
PINNING
SYMBOL
PIN
DESCRIPTION
INV1
1
non-inverting input 1
SGND
2
signal ground
INV2
3
non-inverting input 2
RR
4
supply voltage ripple rejection
V
P1
5
supply voltage 1
OUT1
6
output 1
GND1
7
power ground 1
OUT2
8
output 2
REF
9
reference voltage input
OUT3
10
output 3
GND2
11
power ground 2
OUT4
12
output 4
V
P2
13
supply voltage 2
MODE
14
mode select switch input
INV3
15
inverting input 3
INV3
16
non-inverting input 3
INV4
17
non-inverting input 4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
TDA8512J
INV1
SGND
INV2
INV4
RR
OUT1
GND1
OUT2
REF
OUT3
GND2
OUT4
MODE
INV3
VP1
VP2
MGW427
INV3
Fig.2 Pin configuration.
2001 Nov 16
6
Philips Semiconductors
Preliminary specification
26 W BTL and 2
13 W SE or
4
13 W SE power amplifier
TDA8512J
8
FUNCTIONAL DESCRIPTION
The TDA8512J contains four identical amplifiers and can
be used in the configurations:
Two SE channels (fixed gain 20 dB) and one BTL
channel (fixed gain 26 dB)
Four SE channels.
(R
L
depends on the application).
8.1
Mode select switch
A special feature of the TDA8512J device is the mode
select switch (pin MODE), offering:
Low standby current (<100
A)
Low switching current (low cost supply switch)
Mute facility.
To avoid switch-on plops, it is advised to keep the amplifier
in the mute mode for longer than 100 ms to allow charging
of the input capacitors at pins INV1, INV2, INV3, INV3
and INV4. This can be achieved by:
Control via a microcontroller
An external timing circuit (see Fig.3).
The circuit slowly ramps up the voltage at the pin MODE
when switching on, and results in fast muting when
switching off.
8.2
Mode select
For the 3 functional modes; standby, mute and operate,
the pin MODE can be driven by a 3-state logic output
stage: e.g. microcontroller with some extra components for
DC level shifting. (see Fig.10).
Standby mode will be activated by a applying a low
DC level between 0 and 2 V. The power consumption of
the device will be reduced to less than 1.5 mW. The input
and output pins are floating: high impedance condition.
Mute mode will be activated by a applying a DC level
between 3.3 and 6.4 V. The outputs of the amplifier will be
muted (no audio output); however, the amplifier is
DC biased and the DC level of the input and output pins
stays on half the supply voltage.
Operating mode is obtained at a DC level between 8.5 V
and V
P
.
8.3
Built-in protection circuits
The device contains both a thermal protection, and a
short-circuit protection.
Thermal protection:
The junction temperature is measured by a temperature
sensor; at a junction temperature of about 160
C this
detection circuit switches off the power stages.
Short-circuit protection (outputs to ground, supply and
across the load):
Short-circuit is detected by a so called Maximum Current
Detection circuit, which measures the current in the
positive, respectively negative supply line of each power
stage. At currents exceeding (typical) 6 A, the power
stages are switched off during some ms.
8.4
Short-circuit protection
When a short-circuit during operation to either GND or
across the load of one or more channels occurs, the output
stages are switched off for approximately 20 ms. After that
time, it is checked during approximately 50
s to see
whether the short-circuit is still present. Due to this duty
factor of 50
s per 20 ms, the average supply current is
very low during this short-circuit (approximately 40 mA,
see Fig.4).
handbook, halfpage
100 k
MGA708
47
F
10 k
100
mode
select
switch
VP
Fig.3 Mode select switch circuitry.
2001 Nov 16
7
Philips Semiconductors
Preliminary specification
26 W BTL and 2
13 W SE or
4
13 W SE power amplifier
TDA8512J
9
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. To ground and across load.
10 HANDLING
ESD protection of this device complies with the Philips' General Quality Specification (GQS).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
P
supply voltage
operating
-
18
V
no signal
-
21
V
I
OSM
non-repetitive peak output current
-
6
A
I
ORM
repetitive peak output current
-
4
A
V
sc
short-circuit safe voltage
operating; note 1
-
18
V
V
rp
reverse polarity voltage
-
6
V
P
tot
total power dissipation
-
60
W
T
stg
storage temperature
-
55
+150
C
T
amb
ambient temperature
-
40
+85
C
T
vj
virtual junction temperature
-
150
C
handbook, full pagewidth
MGW430
short-circuit
t (s)
20 ms
current
in
output
stage
I(A)
50
s
Fig.4 Short-circuit wave form.
2001 Nov 16
8
Philips Semiconductors
Preliminary specification
26 W BTL and 2
13 W SE or
4
13 W SE power amplifier
TDA8512J
11 THERMAL CHARACTERISTICS
In accordance with IEC 60747-1.
The measured thermal resistance of the IC-package (R
th(j-c)
) is maximum 1.3 K/W if all four channels are driven. For a
maximum ambient temperature of 60
C and V
P
= 15 V, the following calculation for the heatsink can be made:
For the application two SE outputs with 2
load, the measured worst-case sine-wave dissipation is 2
7 W
For the application BTL output with 4
load, the worst-case sine-wave dissipation is 12.5 W.
So the total power dissipation is P
d(tot)
= 2
7 + 12.5 W = 26.5 W.
At T
j(max)
= 150
C the temperature increase, caused by the power dissipation, is:
T = 150
C
-
60
C = 90
C.
So P
d(tot)
R
th(tot)
=
T = 90 K. As a result:
which means:
R
th(hs)
= R
th(tot)
-
R
th(j-c)
= 3.4
-
1.3 = 2.1 K/W.
The above calculation is for application at worst-case (stereo) sine-wave output signals. In practice, music signals will be
applied. In that case the maximum power dissipation will be about the half the sine-wave power dissipation, which allows
the use of a smaller heatsink.
So P
d(tot)
R
th(tot)
=
T = 90 K. As a result:
which means:
R
th(hs)
= R
th(tot)
-
R
th(j-c)
= 6.8
-
1.3 = 5.5 K/W.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th(j-a)
thermal resistance from junction to ambient
in free air
40.0
K/W
R
th(j-c)
thermal resistance from junction to case
see Fig.5
1.3
K/W
R
th tot
( )
90
26.5
-----------
3.4 K/W
=
=
R
th tot
( )
90
13.25
---------------
6.8 K/W
=
=
handbook, halfpage
3.0 K/W
0.7 K/W
3.0 K/W
virtual junction
output 1
output 2
case
3.0 K/W
0.7 K/W
3.0 K/W
output 3
output 4
MEA860 - 2
0.2 K/W
Fig.5 Equivalent thermal resistance network.
2001 Nov 16
9
Philips Semiconductors
Preliminary specification
26 W BTL and 2
13 W SE or
4
13 W SE power amplifier
TDA8512J
12 DC CHARACTERISTICS
V
P
= 15 V; T
amb
= 25
C; measured according to Figs 6 and 7; unless otherwise specified.
Notes
1. The circuit is DC adjusted at V
P
= 6 to 18 V and AC operating at V
P
= 8.5 to 18 V.
2. Only for BTL channel (V
OUT4
-
V
OUT3
).
13 AC CHARACTERISTICS
V
P
= 15 V; f
i
= 1 kHz; T
amb
= 25
C; bandpass 22 Hz to 22 kHz; measured according to Figs 6 and 7; unless otherwise
specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply
V
P
supply voltage
note 1
6
15
18
V
I
q(tot)
total quiescent current
-
80
160
mA
V
O
DC output voltage
-
6.9
-
V
V
OO
DC output offset voltage
note 2
-
-
150
mV
Mode select switch
V
sw(on)
switch-on voltage
8.5
-
-
V
Mute condition
V
mute voltage
3.3
-
6.4
V
V
O
output voltage
V
i(max)
= 1 V; f
i
= 1 kHz
-
-
2
mV
V
OO
DC output offset voltage
note 2
-
-
150
mV
Standby condition
V
stb
standby voltage
0
-
2
V
I
stb
standby current
-
-
100
A
I
sw(on)
switch-on current
-
12
40
A
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
BTL channel
P
o
output power
R
L2
= 4
(see Fig.7); note 1
THD = 0.5%
16
20
-
W
THD = 10%
22
26
-
W
THD
total harmonic distortion
P
o
= 1 W
-
0.06
-
%
B
P
power bandwidth
THD = 0.5%; P
o
=
-
1 dB with
respect to 17 W
-
20 to 15000
-
Hz
f
ro(l)
low frequency roll-off
at
-
1 dB; note 2
-
25
-
Hz
f
ro(h)
high frequency roll-off
at
-
1 dB
20
-
-
kHz
G
V
closed loop voltage gain
25
26
27
dB
SVRR
supply voltage ripple rejection
note 3;
operating
48
-
-
dB
mute
46
-
-
dB
standby
80
-
-
dB
2001 Nov 16
10
Philips Semiconductors
Preliminary specification
26 W BTL and 2
13 W SE or
4
13 W SE power amplifier
TDA8512J
Notes
1. Output power is measured directly at the output pins of the device.
2. Frequency response externally fixed.
3. Ripple rejection measured at the output with a source impedance of 0
; maximum ripple of 2 V (p-p) and at a
frequency between 100 Hz to 10 kHz.
4. Noise measured in a bandwidth of 20 Hz to 20 kHz.
5. Noise output voltage independant of R
s
(V
i
= 0 V).
Z
i
input impedance
25
30
38
k
V
n(o)
noise output voltage
operating; R
s
= 0
; note 4
-
70
-
V
operating; R
s
= 10 k
; note 4
-
100
200
V
mute; notes 4 and 5
-
60
-
V
SE channels
P
o
output power
R
L1
= 2
(see Fig.7); note 1
THD = 0.5%
8.0
10.0
-
W
THD = 10%
11.0
13.0
-
W
R
L1
= 4
(see Fig.7); note 1
THD = 0.5%
-
5.5
-
W
THD = 10%
-
7.0
-
W
THD
total harmonic distortion
P
o
= 1 W
-
0.06
-
%
f
ro(l)
low frequency roll-off
at
-
1 dB; note 2
-
25
-
Hz
f
ro(h)
high frequency roll-off
at
-
1 dB
20
-
-
kHz
G
v
closed loop voltage gain
19
20
21
dB
SVRR
supply voltage ripple rejection
note 3;
operating
48
-
-
dB
mute
46
-
-
dB
standby
80
-
-
dB
Z
i
input impedance
50
60
75
k
V
n(o)
noise output voltage
operating; R
s
= 0
; note 4
-
50
-
V
operating; R
s
= 10 k
; note 4
-
70
100
V
mute; notes 4 and 5
-
50
-
V
cs
channel separation
R
s
= 10 k
40
60
-
dB
G
V
channel unbalance
-
-
1
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
2001 Nov 16
11
Philips Semiconductors
Preliminary specification
26 W BTL and 2
13 W SE or
4
13 W SE power amplifier
TDA8512J
14 APPLICATION INFORMATION
14.1
Input configuration
Inputs 1 and 2 are used for SE application on pin OUT1,
respectively pin OUT2
Input 3 can be configured for both SE and BTL
application
Input 4 can be used for SE application of pin OUT4, or
for BTL application together with input 3. See
Figs 6 and 7.
Note that the DC level of all input pins is half the supply
voltage V
P
, so coupling capacitors for the input pins are
necessary!
Cut-off frequency for the input is: f
i(co)
= 12 Hz. Therefore
it is not necessary to use high capacitor values on the
input; so the delay during switch-on, which is necessary for
charging the input capacitors, can be minimised. This
results in a good low frequency response and good
switch-on behaviour.
14.2
Output power
The output power versus supply voltage has been
measured on the output pins of one channel, and at
THD = 10%. The maximum output power is limited by the
maximum supply voltage of 18 V and the maximum
available output current: 4 A repetitive peak current.
14.3
Power dissipation
The power dissipation graphs are given for one output
channel in SE, respectively BTL application. So for total
worst-case power dissipation the P
d
of each channel must
be added up.
14.4
Supply Voltage Ripple Rejection (SVRR)
The SVRR is measured with an electrolytic capacitor of
100
F on pin RR and at a bandwidth of 10 Hz to 80 kHz,
whereas the lowest frequencies can be lower than 10 Hz.
Proper supply bypassing is critical for low noise
performance and high power supply rejection. The
respective capacitor locations should be as close to the
device as possible, and grounded to the power ground. A
proper power supply decoupling also prevents oscillations.
For suppressing higher frequency transients (spikes) on
the supply line a capacitor with low ESR (typical 0.1
F)
has to be placed as close as possible to the device. For
suppressing lower frequency noise and ripple signals, a
large electrolytic capacitor (e.g.1000
F or more) must be
placed close to the device.
The bypass capacitor on the pin RR reduces the noise and
ripple on the mid rail voltage. For good THD and noise
performance, a low ESR capacitor is recommended.
14.5
Switch-on and switch-off
To avoid audible plops during switching on and switching
off the supply voltage, the pin MODE has to be set in
standby condition (<2V) before the voltage is applied
(switch-on) or removed (switch-off). Via the mute mode,
the input- and SVRR-capacitors are smoothly charged.
The turn-on and turn-off time can be influenced by an
RC-circuit on the pin MODE (see Fig.3). Rapidly switching
on and off of the device or the pin MODE, may cause "click
and pop" noise. This can be prevented by a proper timing
on the pin MODE.
14.6
PCB layout and grounding
For high system performance level certain grounding
techniques are imperative. The input reference grounds
have to be tied with their respective source grounds, and
must have separate traces from the power ground traces;
this will separate the large (output) signal currents from
interfering with the small AC input signals. The
small-signal ground traces should be physically located as
far as possible from the power ground traces. Supply- and
output-traces should be as wide as practical for delivering
maximum output power. The PCB layout, which
accommodates the TDA8510, TDA8511, and TDA8512
products, is shown in Fig.8.
2001 Nov 16
12
Philips Semiconductors
Preliminary specification
26 W BTL and 2
13 W SE or
4
13 W SE power amplifier
TDA8512J
handbook, full pagewidth
MGW429
100
nF
5
13
220
nF
1
RL
RL
RL
RL
6
OUT1
OUT2
OUT3
OUT4
8
7
11
GND1
GND2
VP
TDA8512J
2200
F
2
3
reference
voltage
16
10
4
17
12
input 1
14
Cout
(2)
Cout
(2)
Cout
(2)
Cout
(2)
SGND
RR
MODE
VP1 VP2
INV1
INV2
1 k
(1)
220
nF
100
F
input 2
1 k
(1)
INV3
15
INV3
9
REF
220
nF
input 3
1 k
(1)
INV4
220
nF
input 4
1 k
(1)
60
k
60
k
60
k
60
k
1/2VP
supply voltage
ripple rejection
Fig.6 Application diagram for four SE amplifiers.
(1) Advised when driven with hard clipping input signals.
(2) For frequencies down to 20 Hz:
C
out
= 4700
F at R
L
= 2
.
C
out
= 2200
F at R
L
= 4
.
2001 Nov 16
13
Philips Semiconductors
Preliminary specification
26 W BTL and 2
13 W SE or
4
13 W SE power amplifier
TDA8512J
handbook, full pagewidth
MGW428
100
nF
5
13
220
nF
1
RL1
RL1
RL2
4
6
OUT1
OUT2
OUT3
OUT4
8
7
11
GND1
GND2
VP
TDA8512J
2200
F
2
3
reference
voltage
15
10
4
17
12
input 1
14
Cout
(2)
Cout
(2)
SGND
RR
MODE
VP1 VP2
INV1
INV2
1 k
(1)
220
nF
100
F
input 2
1 k
(1)
INV3 16
INV3
9
REF
470
nF
inputs
3 and 4
1 k
(1)
INV4
60
k
60
k
60
k
60
k
1/2VP
Fig.7 Application diagram for one BTL amplifier and two SE amplifiers.
(1) Advised when driven with hard clipping input signals.
(2) For frequencies down to 20 Hz:
C
out
= 4700
F at R
L1
= 2
.
C
out
= 2200
F at R
L1
= 4
.
2001 Nov 16
14
Philips Semiconductors
Preliminary specification
26 W BTL and 2
13 W SE or
4
13 W SE power amplifier
TDA8512J
handbook, full pagewidth
MGW520
100
F
4700
F
4700
F
2200
F
47
F
out 2
out 1
out 3
out 4
Diag
VP
IN
TDA8512
TDA8511
TDA8510
3
4
IN 2
1
mode
off
on
S-Gnd
Gnd
10
k
100 nF
470 nF
220 nF
78 mm
55
mm
Fig.8 Printed-circuit board layout.
a. Top view copper layout.
b. Top view component layout.
2001 Nov 16
15
Philips Semiconductors
Preliminary specification
26 W BTL and 2
13 W SE or
4
13 W SE power amplifier
TDA8512J
14.7
Typical performance characteristics
handbook, halfpage
VP (V)
Iq
(mA)
7
11
15
9
13
17
19
120
60
100
80
20
0
40
MGW431
Fig.9
Quiescent current as a function of supply
voltage; measured without load.
handbook, halfpage
0
6
2
8
10
VMODE (V)
4
MGW432
Vo
(mV)
10
1
10
-
1
10
-
2
10
-
3
10
2
10
4
10
3
(1)
(2)
Fig.10 Output voltage as a function of mode select
voltage.
(1) BTL mode.
(2) SE mode.
handbook, halfpage
MGW433
Po (W)
10
-
2
10
-
1
1
10
10
2
THD
(%)
10
1
10
-
1
10
-
2
(1)
(2)
(3)
Fig.11 THD as a function of output power at
R
L
= 2
.
SE mode.
(1) f
i
= 10 kHz.
(2) f
i
= 1 kHz.
(3) f
i
= 100 Hz.
handbook, halfpage
MGW434
Po (W)
10
-
2
10
-
1
1
10
10
2
THD
(%)
10
1
10
-
1
10
-
2
(1)
(2)
(3)
Fig.12 THD as a function of output power at
R
L
= 4
.
SE mode.
(1) f
i
= 10 kHz.
(2) f
i
= 1 kHz.
(3) f
i
= 100 Hz.
2001 Nov 16
16
Philips Semiconductors
Preliminary specification
26 W BTL and 2
13 W SE or
4
13 W SE power amplifier
TDA8512J
handbook, halfpage
MGW436
(1)
(2)
(3)
(4)
10
-
2
10
-
1
1
10
10
2
SVRR
(dB)
-
60
-
80
-
40
-
20
0
fi (kHz)
Fig.13 SVRR as a function of frequency at
V
REF
= 1 V; no bandpass applied.
SE mode.
(1) Mute mode channel 2.
(2) Mute mode channel 1.
(3) Operating mode channel 2.
(4) Operating mode channel 1.
handbook, halfpage
MGW435
fi (kHz)
10
-
2
10
-
1
1
10
10
2
THD
(%)
10
1
10
-
1
10
-
2
(1)
(2)
Fig.14 THD as a function of frequency at P
o
= 1 W;
no bandpass applied.
SE mode.
(1) R
L
= 4
.
(2) R
L
= 2
.
handbook, halfpage
MGW443
cs
(dB)
-
60
-
80
-
40
-
20
0
10
-
2
10
-
1
1
10
10
2
fi (kHz)
Fig.15 Channel separation as a function of
frequency; no bandpass applied.
SE mode.
handbook, halfpage
Po
(W)
5
10
15
20
VP (V)
20
16
8
4
0
12
MGW444
(1)
(2)
(3)
(4)
Fig.16 Output power as a function of supply
voltage.
SE mode.
(1) R
L
= 2
; THD = 10%.
(2) R
L
= 2
; THD = 0.5%.
(3) R
L
= 4
; THD = 10%.
(4) R
L
= 4
; THD = 0.5%.
2001 Nov 16
17
Philips Semiconductors
Preliminary specification
26 W BTL and 2
13 W SE or
4
13 W SE power amplifier
TDA8512J
handbook, halfpage
Pd
(W)
0
8
4
12
16
Po (W)
10
6
8
2
0
4
MGW445
(1)
(2)
Fig.17 Power dissipation as a function of output
power at V
P
= 15 V.
SE mode.
(1) R
L
= 2
.
(2) R
L
= 4
.
handbook, halfpage
5
10
15
20
VP (V)
Pd
(W)
12
6
10
8
2
0
4
MGW446
(1)
(2)
Fig.18 Power dissipation as a function of supply
voltage.
SE mode.
(1) R
L
= 2
.
(2) R
L
= 4
.
handbook, halfpage
MGW447
BP
(dB)
-
2
-
4
0
2
4
10
-
2
10
-
1
1
10
10
2
fi (kHz)
Fig.19 Power bandwidth as a function of
frequency; no bandpass applied.
SE mode.
V
P
= 15 V; R
L
= 2
.
P
o
= 8.5 W; THD = 0.5%.
handbook, halfpage
MGW448
BP
(dB)
-
2
-
4
0
2
4
10
-
2
10
-
1
1
10
10
2
fi (kHz)
Fig.20 Power bandwidth as a function of
frequency; no bandpass applied.
BTL mode.
V
P
= 15 V; R
L
= 4
.
P
o
= 17 W; THD = 0.5%.
2001 Nov 16
18
Philips Semiconductors
Preliminary specification
26 W BTL and 2
13 W SE or
4
13 W SE power amplifier
TDA8512J
handbook, halfpage
MGW437
Po (W)
10
-
2
10
-
1
1
10
10
2
THD
(%)
10
1
10
-
1
10
-
2
(1)
(2)
(3)
Fig.21 THD as a function of output power at
R
L
= 4
.
BTL mode.
(1) f
i
= 10 kHz.
(2) f
i
= 1 kHz.
(3) f
i
= 100 Hz.
handbook, halfpage
MGW438
10
-
2
10
-
1
1
10
10
2
THD
(%)
10
1
10
-
1
10
-
2
fi (kHz)
Fig.22 THD as a function of frequency; no
bandpass applied.
BTL mode.
P
o
= 1 W; R
L
= 4
.
handbook, halfpage
MGW439
SVRR
(dB)
-
60
-
80
-
40
-
20
0
10
-
2
10
-
1
1
10
10
2
(1)
(2)
fi (kHz)
Fig.23 SVRR as a function of frequency at
V
REF
= 1 V; no bandpass applied.
BTL mode.
(1) Operating.
(2) Mute.
handbook, halfpage
Po
(W)
5
10
15
20
VP (V)
40
30
10
0
20
MGW440
(1)
(2)
(3)
(4)
Fig.24 Output power as a function of supply
voltage.
BTL mode.
(1) R
L
= 4
; THD = 10%.
(2) R
L
= 4
; THD = 0.5%.
(3) R
L
= 8
; THD = 10%.
(4) R
L
= 8
; THD = 0.5%.
2001 Nov 16
19
Philips Semiconductors
Preliminary specification
26 W BTL and 2
13 W SE or
4
13 W SE power amplifier
TDA8512J
handbook, halfpage
Pd
(W)
0
10
20
30
Po (W)
16
12
4
0
8
MGW441
(1)
(2)
Fig.25 Power dissipation as a function of output
power at V
P
= 15 V.
BTL mode.
(1) R
L
= 4
.
(2) R
L
= 8
.
handbook, halfpage
Pd
(W)
5
10
15
20
VP (V)
20
16
8
4
0
12
MGW442
(1)
(2)
Fig.26 Power dissipation as a function of supply
voltage.
BTL mode.
(1) R
L
= 4
.
(2) R
L
= 8
.
2001 Nov 16
20
Philips Semiconductors
Preliminary specification
26 W BTL and 2
13 W SE or
4
13 W SE power amplifier
TDA8512J
15 PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
SOT243-1
0
5
10 mm
scale
D
L
E
A
c
A
2
L
3
Q
w
M
b
p
1
d
D
Z
e
e
x
h
1
17
j
Eh
non-concave
97-12-16
99-12-17
DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)
SOT243-1
view B: mounting base side
m
2
e
v
M
B
UNIT
A
e
1
A
2
b
p
c
D
(1)
E
(1)
Z
(1)
d
e
D
h
L
L
3
m
mm
17.0
15.5
4.6
4.4
0.75
0.60
0.48
0.38
24.0
23.6
20.0
19.6
10
2.54
v
0.8
12.2
11.8
1.27
e
2
5.08
2.4
1.6
E
h
6
2.00
1.45
2.1
1.8
3.4
3.1
4.3
12.4
11.0
Q
j
0.4
w
0.03
x
2001 Nov 16
21
Philips Semiconductors
Preliminary specification
26 W BTL and 2
13 W SE or
4
13 W SE power amplifier
TDA8512J
16 SOLDERING
16.1
Introduction to soldering through-hole mount
packages
This text gives a brief insight to wave, dip and manual
soldering. A more in-depth account of soldering ICs can be
found in our
"Data Handbook IC26; Integrated Circuit
Packages" (document order number 9398 652 90011).
Wave soldering is the preferred method for mounting of
through-hole mount IC packages on a printed-circuit
board.
16.2
Soldering by dipping or by solder wave
The maximum permissible temperature of the solder is
260
C; solder at this temperature must not be in contact
with the joints for more than 5 seconds.
The total contact time of successive solder waves must not
exceed 5 seconds.
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T
stg(max)
). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
16.3
Manual soldering
Apply the soldering iron (24 V or less) to the lead(s) of the
package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300
C it may remain in contact for up to
10 seconds. If the bit temperature is between
300 and 400
C, contact may be up to 5 seconds.
16.4
Suitability of through-hole mount IC packages for dipping and wave soldering methods
Note
1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.
PACKAGE
SOLDERING METHOD
DIPPING
WAVE
DBS, DIP, HDIP, SDIP, SIL
suitable
suitable
(1)
2001 Nov 16
22
Philips Semiconductors
Preliminary specification
26 W BTL and 2
13 W SE or
4
13 W SE power amplifier
TDA8512J
17 DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DATA SHEET STATUS
(1)
PRODUCT
STATUS
(2)
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
18 DEFINITIONS
Short-form specification
The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition
Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
19 DISCLAIMERS
Life support applications
These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2001 Nov 16
23
Philips Semiconductors
Preliminary specification
26 W BTL and 2
13 W SE or
4
13 W SE power amplifier
TDA8512J
NOTES
Koninklijke Philips Electronics N.V. 2001
SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands
753503/01/pp
24
Date of release:
2001 Nov 16
Document order number:
9397 750 08677
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