DATA SHEET
Product specification
Supersedes data of 1997 Feb 19
File under Integrated Circuits, IC01
1998 Apr 01
INTEGRATED CIRCUITS
TDA8541
1 W BTL audio amplifier
1998 Apr 01
2
Philips Semiconductors
Product specification
1 W BTL audio amplifier
TDA8541
FEATURES
Flexibility in use
Few external components
Low saturation voltage of output stage
Gain can be fixed with external resistors
Standby mode controlled by CMOS compatible levels
Low standby current
No switch-on/switch-off plops
High supply voltage ripple rejection
Protected against electrostatic discharge
Outputs short-circuit safe to ground, V
CC
and across the
load
Thermally protected.
GENERAL DESCRIPTION
The TDA8541(T) is a one channel audio power amplifier
for an output power of 1 W with an 8
load at a 5 V
supply. The circuit contains a BTL amplifier with a
complementary PNP-NPN output stage and standby/mute
logic. The TDA8541T comes in an 8 pin SO package and
the TDA8541 in an 8 pin DIP package.
APPLICATIONS
Portable consumer products
Personal computers
Telephony.
QUICK REFERENCE DATA
ORDERING INFORMATION
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CC
supply voltage
2.2
5
18
V
I
q
quiescent current
V
CC
= 5 V
-
8
12
mA
I
stb
standby current
-
-
10
A
P
o
output power
THD = 10%; R
L
= 8
; V
CC
= 5 V
1
1.2
-
W
THD
total harmonic distortion
P
o
= 0.5 W
-
0.15
-
%
SVRR
supply voltage ripple rejection
50
-
-
dB
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
TDA8541T
SO8
plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
TDA8541
DIP8
plastic dual in-line package; 8 leads (300 mil)
SOT97-1
1998 Apr 01
3
Philips Semiconductors
Product specification
1 W BTL audio amplifier
TDA8541
BLOCK DIAGRAM
Fig.1 Block diagram.
handbook, halfpage
MGB972
4
STANDBY/MUTE LOGIC
3
6
2
1
7
8
5
R
R
20 k
20 k
IN
-
IN
+
VCC
SVR
MODE
OUT
-
OUT
+
GND
-
-
+
-
-
+
TDA8541
PINNING
SYMBOL
PIN
DESCRIPTION
MODE
1
operating mode select
(standby, mute, operating)
SVR
2
half supply voltage, decoupling
ripple rejection
IN+
3
positive input
IN
-
4
negative input
OUT
-
5
negative loudspeaker terminal
V
CC
6
supply voltage
GND
7
ground
OUT+
8
positive loudspeaker terminal
Fig.2 Pin configuration.
handbook, halfpage
1
2
3
4
8
7
6
5
MGB971
TDA8541
OUT
+
GND
SVR
VCC
OUT
-
IN
-
IN
+
MODE
FUNCTIONAL DESCRIPTION
The TDA8541(T) is a BTL audio power amplifier capable
of delivering 1 W output power to an 8
load at
THD = 10% using a 5 V power supply. Using the MODE
pin the device can be switched to standby and mute
condition. The device is protected by an internal thermal
shutdown protection mechanism. The gain can be set
within a range from 6 dB to 30 dB by external feedback
resistors.
Power amplifier
The power amplifier is a Bridge Tied Load (BTL) amplifier
with a complementary PNP-NPN output stage.
The voltage loss on the positive supply line is the
saturation voltage of a PNP power transistor, on the
negative side the saturation voltage of an NPN power
transistor. The total voltage loss is <1 V and with a 5 V
supply voltage and an 8
loudspeaker an output power of
1 W can be delivered.
Mode select pin
The device is in standby mode (with a very low current
consumption) if the voltage at the MODE pin is
>(V
CC
-
0.5 V), or if this pin is floating. At a MODE voltage
level of less than 0.5 V the amplifier is fully operational.
In the range between 1.5 V and V
CC
-
1.5 V the amplifier
is in mute condition. The mute condition is useful to
suppress plop noise at the output, caused by charging of
the input capacitor.
1998 Apr 01
4
Philips Semiconductors
Product specification
1 W BTL audio amplifier
TDA8541
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
QUALITY SPECIFICATION
In accordance with
"SNW-FQ-611-E". The number of the quality specification can be found in the "Quality Reference
Handbook". The handbook can be ordered using the code 9397 750 00192.
THERMAL CHARACTERISTICS
DC CHARACTERISTICS
V
CC
= 5 V; T
amb
= 25
C; R
L
= 8
; V
MODE
= 0 V; measured in test circuit Fig.3; unless otherwise specified.
Notes
1. With a load connected at the outputs the quiescent current will increase, the maximum of this increase being equal
to the DC output offset voltage divided by R
L
.
2. The DC output voltage with respect to ground is approximately 0.5
V
CC
.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CC
supply voltage
operating
-
0.3
+18
V
V
I
input voltage
-
0.3
V
CC
+ 0.3
V
I
ORM
repetitive peak output current
-
1
A
T
stg
storage temperature
non-operating
-
55
+150
C
T
amb
operating ambient temperature
-
40
+85
C
V
psc
AC and DC short-circuit safe voltage
-
10
V
P
tot
total power dissipation
SO8
-
0.8
W
DIP8
-
1.2
W
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
in free air
TDA8541T (SO8)
160
K/W
TDA8541 (DIP8)
100
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CC
supply voltage
operating
2.2
5
18
V
I
q
quiescent current
R
L
=
; note 1
-
8
12
mA
I
stb
standby current
V
MODE
= V
CC
-
-
10
A
V
O
DC output voltage
note 2
-
2.2
-
V
V
OUT+
-
V
OUT
-
differential output voltage offset
-
-
50
mV
I
IN+
, I
IN
-
input bias current
-
-
500
nA
V
MODE
input voltage mode select
operating
0
-
0.5
V
mute
1.5
-
V
CC
-
1.5 V
standby
V
CC
-
0.5
-
V
CC
V
I
MODE
input current mode select
0 < V
MODE
< V
CC
-
-
20
A
1998 Apr 01
5
Philips Semiconductors
Product specification
1 W BTL audio amplifier
TDA8541
AC CHARACTERISTICS
V
CC
= 5 V; T
amb
= 25
C; R
L
= 8
; f = 1 kHz; V
MODE
= 0 V; measured in test circuit Fig.3; unless otherwise specified.
Notes
1. Gain of the amplifier is 2
R2/R1 in test circuit of Fig.3.
2. The noise output voltage is measured at the output in a frequency range from 20 Hz to 20 kHz (unweighted), with a
source impedance of R
S
= 0
at the input.
3. Supply voltage ripple rejection is measured at the output, with a source impedance of R
S
= 0
at the input.
The ripple voltage is a sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS), which is applied to
the positive supply rail.
4. Supply voltage ripple rejection is measured at the output, with a source impedance of R
S
= 0
at the input.
The ripple voltage is a sine wave with a frequency between 100 Hz and 20 kHz and an amplitude of 100 mV (RMS),
which is applied to the positive supply rail.
5. Output voltage in mute position is measured with an input voltage of 1 V (RMS) in a bandwidth of 20 kHz, so including
noise.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
P
o
output power
THD = 10%
1
1.2
-
W
THD = 0.5%
0.6
0.9
-
W
THD
total harmonic distortion
P
o
= 0.5 W
-
0.15
0.3
%
G
v
closed loop voltage gain
note 1
6
-
30
dB
Z
i
differential input impedance
-
100
-
k
V
no
noise output voltage
note 2
-
-
100
V
SVRR
supply voltage ripple rejection
note 3
50
-
-
dB
note 4
40
-
-
dB
V
o
output voltage in mute condition
note 5
-
-
200
V
1998 Apr 01
6
Philips Semiconductors
Product specification
1 W BTL audio amplifier
TDA8541
TEST AND APPLICATION INFORMATION
Test conditions
Because the application can be either Bridge-Tied Load
(BTL) or Single-Ended (SE), the curves of each application
are shown separately.
The thermal resistance = 100 K/W for the DIP8 envelope;
the maximum sine wave power dissipation for
T
amb
= 25
C is:
.
For T
amb
= 60
C the maximum total power dissipation is:
.
BTL application
T
amb
= 25
C if not specially mentioned, V
CC
= 5 V,
f = 1 kHz, R
L
= 8
, G
v
= 20 dB, audio band-pass
22 Hz to 22 kHz.
The BTL application diagram is shown in Fig.3.
The quiescent current has been measured without any
load impedance. The total harmonic distortion as a
function of frequency was measured with a low-pass filter
of 80 kHz. The value of capacitor C2 influences the
behaviour of the SVRR at low frequencies, increasing the
value of C2 increases the performance of the SVRR.
The figure of the mode select voltage (V
ms
) as a function
of the supply voltage shows three areas; operating, mute
and standby. It shows, that the DC-switching levels of the
mute and standby respectively depends on the supply
voltage level.
150
25
100
----------------------
1.25 W
=
150
60
100
----------------------
0.9 W
=
SE application
T
amb
= 25
C if not specially mentioned, V
CC
= 7.5 V,
f = 1 kHz, R
L
= 4
, G
v
= 20 dB, audio band-pass
22 Hz to 22 kHz.
The SE application diagram is shown in Fig.13.
The capacitor value of C3 in combination with the load
impedance determines the low frequency behaviour.
The total harmonic distortion as a function of frequency
was measured with low-pass filter of 80 kHz. The value of
capacitor C2 influences the behaviour of the SVRR at low
frequencies, increasing the value of C2 increases the
performance of the SVRR.
General remark
The frequency characteristic can be adapted by
connecting a small capacitor across the feedback resistor.
To improve the immunity of HF radiation in radio circuit
applications, a small capacitor can be connected in
parallel with the feedback resistor (56 k
); this creates a
low-pass filter.
1998 Apr 01
7
Philips Semiconductors
Product specification
1 W BTL audio amplifier
TDA8541
BTL APPLICATION
Fig.3 BTL application.
handbook, full pagewidth
MBH881
4
VCC
Vin
OUT
-
IN
-
IN
+
OUT
+
5
100 nF
100
F
6
7
TDA8541
3
GND
RL
SVR
2
1
MODE
8
C2
47
F
1
F
C1
R1
R2
11 k
56 k
Gain
2
R2
R1
--------
=
Fig.4 I
q
as a function of V
CC
.
R
L
=
.
handbook, halfpage
0
Iq
(mA)
VCC (V)
15
10
5
0
4
20
8
12
16
MGD876
Fig.5 THD as a function of P
o
.
handbook, halfpage
10
1
THD
(%)
10
-
1
10
-
2
MGD877
10
-
2
10
-
1
1
Po (W)
10
(1)
(2)
f = 1 kHz, G
v
= 20 dB.
(1) V
CC
= 5 V, R
L
= 8
.
(2) V
CC
= 9 V, R
L
= 16
.
1998 Apr 01
8
Philips Semiconductors
Product specification
1 W BTL audio amplifier
TDA8541
Fig.6 THD as a function of frequency.
handbook, halfpage
10
1
10
-
1
10
-
2
MGD878
10
10
2
10
3
10
4
THD
(%)
f (Hz)
10
5
(1)
(2)
P
o
= 0.5 W, G
v
= 20 dB.
(1) V
CC
= 5 V, R
L
= 8
.
(2) V
CC
= 9 V, R
L
= 16
.
Fig.7 SVRR as a function of frequency.
handbook, halfpage
-
80
-
60
-
40
-
20
MGD879
10
10
2
10
3
SVRR
(dB)
f (Hz)
10
4
10
5
(1)
(2)
(3)
V
CC
= 5 V, 8
, R
s
= 0
, V
i
= 100 mV.
(1) G
v
= 30 dB.
(2) G
v
= 20 dB.
(3) G
v
= 6 dB.
Fig.8 P
o
as a function of V
CC
.
THD = 10%.
(1) R
L
= 8
.
(2) R
L
= 16
.
handbook, halfpage
0
(1)
(2)
4
8
Po
(W)
VCC (V)
12
2.5
0
2
1.5
1
0.5
MGD880
Fig.9
Worst case power dissipation as a function
of V
CC
.
handbook, halfpage
0
(1)
(2)
4
P
(W)
VCC (V)
8
12
2
1.5
0.5
0
1
MGD881
(1) R
L
= 8
.
(2) R
L
= 16
.
1998 Apr 01
9
Philips Semiconductors
Product specification
1 W BTL audio amplifier
TDA8541
Fig.10 P as a function of P
o
.
Sine wave of 1 kHz.
(1) V
CC
= 9 V, R
L
= 16
.
(2) V
CC
= 5 V, R
L
= 8
.
handbook, halfpage
0
0.5
2.5
1.6
1.2
0.4
0
0.8
1
1.5
2
P
(W)
Po (W)
MGD882
(1)
(2)
Fig.11 V
o
as a function of V
ms
.
Band-pass = 22 Hz to 22 kHz.
(1) V
CC
= 3 V.
(2) V
CC
= 5 V.
(3) V
CC
= 12 V.
handbook, halfpage
10
1
10
-
1
10
-
2
10
-
3
10
-
5
10
-
4
10
-
6
MGD883
10
-
1
1
Vo
(V)
Vms (V)
10
10
2
(1)
(2)
(3)
Fig.12 V
ms
as a function of V
P
.
handbook, halfpage
0
4
8
Vms
(V)
16
16
12
4
0
8
12
VP (V)
MGL070
operating
mute
standby
1998 Apr 01
10
Philips Semiconductors
Product specification
1 W BTL audio amplifier
TDA8541
SE APPLICATION
Fig.13 SE application.
handbook, full pagewidth
MBH882
4
VCC
Vin
OUT
-
IN
-
IN
+
OUT
+
5
100 nF
100
F
470
F
C3
6
7
TDA8541
3
GND
RL
SVR
2
1
MODE
8
C2
47
F
1
F
C1
R1
R2
11 k
110 k
Gain
R2
R1
--------
=
Fig.14 THD as a function of P
o
.
handbook, halfpage
10
1
THD
(%)
10
-
2
10
-
1
MGD884
10
-
2
10
-
1
1
Po (W)
10
(1)
(3)
(2)
f = 1 kHz, G
v
= 20 dB.
(1) V
CC
= 7.5 V, R
L
= 4
.
(2) V
CC
= 9 V, R
L
= 8
.
(3) V
CC
= 12 V, R
L
= 16
.
Fig.15 THD as a function of frequency.
P
o
= 0.5 W, G
v
= 20 dB.
(1) V
CC
= 7.5 V, R
L
= 4
.
(2) V
CC
= 9 V, R
L
= 8
.
(3) V
CC
= 12 V, R
L
= 16
.
handbook, halfpage
10
1
THD
(%)
f (Hz)
10
-
1
10
-
2
MGD885
10
10
2
10
3
10
4
10
5
(1)
(2)
(3)
1998 Apr 01
11
Philips Semiconductors
Product specification
1 W BTL audio amplifier
TDA8541
Fig.16 SVRR as a function of frequency.
V
CC
= 7.5 V, R
L
= 4
, R
s
= 0
, V
i
= 100mV.
(1) G
v
= 24 dB.
(2) G
v
= 20 dB.
(3) G
v
= 0 dB.
handbook, halfpage
-
80
-
60
-
40
-
20
MGD886
10
10
2
10
3
SVRR
(dB)
f (Hz)
10
4
10
5
(1)
(3)
(2)
Fig.17 P
o
as a function of V
CC
.
(1) THD = 10%, R
L
= 4
.
(2) THD = 10%, R
L
= 8
.
(3) THD = 10%, R
L
= 16
.
handbook, halfpage
0
4
(1)
(2)
(3)
8
Po
(W)
VCC (V)
16
2
0
1.6
12
1.2
0.8
0.4
MGD887
Fig.18 Worst case power dissipation as a function
of V
CC
.
(1) R
L
= 4
.
(2) R
L
= 8
.
(3) R
L
= 16
.
handbook, halfpage
0
4
P
(W)
VCC (V)
8
16
1.6
1.2
(1)
(2)
(3)
0.4
0
0.8
12
MGD888
Fig.19 Power dissipation as a function of P
o
.
(1) V
CC
= 7.5 V, R
L
= 4
.
(2) V
CC
= 12 V, R
L
= 16
.
(3) V
CC
= 9 V, R
L
= 8
.
handbook, halfpage
0
(1)
(3)
(2)
1.2
0.8
0.4
0
0.4
0.8
1.6
1.2
P
(W)
Po (W)
MGD889
1998 Apr 01
12
Philips Semiconductors
Product specification
1 W BTL audio amplifier
TDA8541
handbook, full pagewidth
MBH920
MS
IN
OUT
+
+
VP
OUT
-
100
F
100 nF
56 k
11 k
6.8 k
1
4
8
5
6.8 k
47
F
1
F
TDA8541
Fig.20 Printed-circuit board layout (BTL and SE).
a. Top view.
b. Component side.
1998 Apr 01
13
Philips Semiconductors
Product specification
1 W BTL audio amplifier
TDA8541
PACKAGE OUTLINES
UNIT
A
max.
A
1
A
2
A
3
b
p
c
D
(1)
E
(2)
(1)
e
H
E
L
L
p
Q
Z
y
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
inches
1.75
0.25
0.10
1.45
1.25
0.25
0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8
1.27
6.2
5.8
1.05
0.7
0.6
0.7
0.3
8
0
o
o
0.25
0.1
0.25
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
1.0
0.4
SOT96-1
X
w
M
A
A
1
A
2
b
p
D
H
E
L
p
Q
detail X
E
Z
e
c
L
v
M
A
(A )
3
A
4
5
pin 1 index
1
8
y
076E03S
MS-012AA
0.069
0.010
0.004
0.057
0.049
0.01
0.019
0.014
0.0100
0.0075
0.20
0.19
0.16
0.15
0.050
0.244
0.228
0.028
0.024
0.028
0.012
0.01
0.01
0.041
0.004
0.039
0.016
0
2.5
5 mm
scale
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
95-02-04
97-05-22
1998 Apr 01
14
Philips Semiconductors
Product specification
1 W BTL audio amplifier
TDA8541
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT97-1
92-11-17
95-02-04
UNIT
A
max.
1
2
b
1
(1)
(1)
(1)
b
2
c
D
E
e
M
Z
H
L
mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
min.
A
max.
b
max.
w
M
E
e
1
1.73
1.14
0.53
0.38
0.36
0.23
9.8
9.2
6.48
6.20
3.60
3.05
0.254
2.54
7.62
8.25
7.80
10.0
8.3
1.15
4.2
0.51
3.2
inches
0.068
0.045
0.021
0.015
0.014
0.009
1.07
0.89
0.042
0.035
0.39
0.36
0.26
0.24
0.14
0.12
0.01
0.10
0.30
0.32
0.31
0.39
0.33
0.045
0.17
0.020
0.13
b
2
050G01
MO-001AN
M
H
c
(e )
1
M
E
A
L
seating plane
A
1
w
M
b
1
e
D
A
2
Z
8
1
5
4
b
E
0
5
10 mm
scale
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
pin 1 index
DIP8: plastic dual in-line package; 8 leads (300 mil)
SOT97-1
1998 Apr 01
15
Philips Semiconductors
Product specification
1 W BTL audio amplifier
TDA8541
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our
"IC Package Databook" (order code 9398 652 90011).
DIP
S
OLDERING BY DIPPING OR BY WAVE
The maximum permissible temperature of the solder is
260
C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T
stg max
). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
R
EPAIRING SOLDERED JOINTS
Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300
C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400
C, contact may be up to 5 seconds.
SO
R
EFLOW SOLDERING
Reflow soldering techniques are suitable for all SO
packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250
C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45
C.
W
AVE SOLDERING
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
The longitudinal axis of the package footprint must be
parallel to the solder flow.
The package footprint must incorporate solder thieves at
the downstream end.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Maximum permissible solder temperature is 260
C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150
C within
6 seconds. Typical dwell time is 4 seconds at 250
C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
R
EPAIRING SOLDERED JOINTS
Fix the component by first soldering two diagonally-
opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300
C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320
C.
1998 Apr 01
16
Philips Semiconductors
Product specification
1 W BTL audio amplifier
TDA8541
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1998 Apr 01
17
Philips Semiconductors
Product specification
1 W BTL audio amplifier
TDA8541
NOTES
1998 Apr 01
18
Philips Semiconductors
Product specification
1 W BTL audio amplifier
TDA8541
NOTES
1998 Apr 01
19
Philips Semiconductors
Product specification
1 W BTL audio amplifier
TDA8541
NOTES
Internet: http://www.semiconductors.philips.com
Philips Semiconductors a worldwide company
Philips Electronics N.V. 1998
SCA59
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010,
Fax. +43 160 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 689 211, Fax. +359 2 689 102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 0044
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615800, Fax. +358 9 61580920
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
Germany: Hammerbrookstrae 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Printed in The Netherlands
545102/00/05/pp20
Date of release: 1998 Apr 01
Document order number:
9397 750 03352
PDF 
ZIP