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Электронный компонент: TDA8927ST

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DATA SHEET
Objective specification
File under Integrated Circuits, IC01
2001 Dec 11
INTEGRATED CIRCUITS
TDA8927
Power stage 2
80 W class-D
audio amplifier
2001 Dec 11
2
Philips Semiconductors
Objective specification
Power stage 2
80 W class-D
audio amplifier
TDA8927
CONTENTS
1
FEATURES
2
APPLICATIONS
3
GENERAL DESCRIPTION
4
QUICK REFERENCE DATA
5
ORDERING INFORMATION
6
BLOCK DIAGRAMS
7
PINNING INFORMATION
8
FUNCTIONAL DESCRIPTION
8.1
Power stage
8.2
Protections
8.2.1
Overtemperature
8.2.2
Short-circuit across the loudspeaker terminals
8.3
BTL operation
9
LIMITING VALUES
10
THERMAL CHARACTERISTICS
11
QUALITY SPECIFICATION
12
DC CHARACTERISTICS
13
AC CHARACTERISTICS
14
SWITCHING CHARACTERISTICS
14.1
Duty factor
15
TEST AND APPLICATION INFORMATION
15.1
BTL application
15.2
Remarks
15.3
Output power
15.4
Reference designs
15.5
Reference design bill of material
15.6
Curves measured in reference design
16
PACKAGE OUTLINES
17
SOLDERING
17.1
Introduction
17.2
Through-hole mount packages
17.2.1
Soldering by dipping or by solder wave
17.2.2
Manual soldering
17.3
Surface mount packages
17.3.1
Reflow soldering
17.3.2
Wave soldering
17.3.3
Manual soldering
17.4
Suitability of IC packages for wave, reflow and
dipping soldering methods
18
DATA SHEET STATUS
19
DEFINITIONS
20
DISCLAIMERS
2001 Dec 11
3
Philips Semiconductors
Objective specification
Power stage 2
80 W class-D
audio amplifier
TDA8927
1
FEATURES
High efficiency (>94%)
Operating voltage from
15 to
30 V
Very low quiescent current
High output power
Short-circuit proof across the load, only in combination
with controller TDA8929T
Diagnostic output
Usable as a stereo Single-Ended (SE) amplifier or as a
mono amplifier in Bridge-Tied Load (BTL)
Electrostatic discharge protection (pin to pin)
Thermally protected, only in combination with controller
TDA8929T.
2
APPLICATIONS
Television sets
Home-sound sets
Multimedia systems
All mains fed audio systems
Car audio (boosters).
3
GENERAL DESCRIPTION
The TDA8927 is the switching power stage of a two-chip
set for a high efficiency class-D audio power amplifier
system. The system is split into two chips:
TDA8927J/ST/TH; a digital power stage in a DBS17P,
RDBS17P or HSOP24 power package
TDA8929T; the analog controller chip in a SO24
package.
With this chip set a compact 2
80 W audio amplifier
system can be built, operating with high efficiency and very
low dissipation. No heatsink is required, or depending on
supply voltage and load, a very small one. The system
operates over a wide supply voltage range from
15 up to
30 V and consumes a very low quiescent
current.
4
QUICK REFERENCE DATA
5
ORDERING INFORMATION
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
General; V
P
=
25 V
V
P
supply voltage
15
25
30
V
I
q(tot)
total quiescent current
no load connected
-
35
45
mA
efficiency
P
o
= 30 W
-
94
-
%
Stereo single-ended configuration
P
o
output power
R
L
= 4
; THD = 10%; V
P
=
25 V
60
65
-
W
R
L
= 4
; THD = 10%; V
P
=
27 V
74
80
-
W
Mono bridge-tied load configuration
P
o
output power
R
L
= 4
;
THD = 10%; V
P
=
17 V
90
110
-
W
R
L
= 8
; THD = 10%; V
P
=
25 V
120
150
-
W
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
TDA8927J
DBS17P
plastic DIL-bent-SIL power package; 17 leads (lead length
12 mm)
SOT243-1
TDA8927ST
RDBS17P
plastic rectangular-DIL-bent-SIL power package; 17 leads (row
spacing 2.54 mm)
SOT577-1
TDA8927TH
HSOP24
plastic, heatsink small outline package; 24 leads; low stand-off
height
SOT566-2
2001 Dec 11
4
Philips Semiconductors
Objective specification
Power stage 2
80 W class-D
audio amplifier
TDA8927
6
BLOCK DIAGRAMS
MGW138
handbook, full pagewidth
CONTROL
AND
HANDSHAKE
DRIVER
HIGH
TDA8927J
TDA8927ST
TEMPERATURE SENSOR
AND
CURRENT PROTECTION
DRIVER
LOW
temp
current
4
7
VSS1
VSS1 VSS2
VDD2
6
1
2
9
8
10
VDD2 VDD1
13
5
CONTROL
AND
HANDSHAKE
DRIVER
HIGH
DRIVER
LOW
14
11
12
17
16
3
15
EN1
DIAG
REL1
SW1
SW2
REL2
POWERUP
EN2
BOOT1
OUT1
STAB
OUT2
BOOT2
Fig.1 Block diagram of TDA8927J and TDA8927ST.
2001 Dec 11
5
Philips Semiconductors
Objective specification
Power stage 2
80 W class-D
audio amplifier
TDA8927
MGW140
handbook, full pagewidth
CONTROL
AND
HANDSHAKE
DRIVER
HIGH
TDA8927TH
TEMPERATURE SENSOR
AND
CURRENT PROTECTION
4
DRIVER
LOW
temp
current
24
17
4
VSS1
VSS1 VSS2
VDD2
3
21
22
6
19
5
8
VDD2 VDD1
11
2
CONTROL
AND
HANDSHAKE
DRIVER
HIGH
DRIVER
LOW
13
9
10
16
15
7
1, 12, 18, 20
23
14
EN1
DIAG
REL1
SW1
n.c.
VSS(sub)
LIM
SW2
REL2
POWERUP
EN2
BOOT1
OUT1
STAB
STAB
OUT2
BOOT2
Fig.2 Block diagram of TDA8927TH.
2001 Dec 11
6
Philips Semiconductors
Objective specification
Power stage 2
80 W class-D
audio amplifier
TDA8927
7
PINNING INFORMATION
SYMBOL
PIN
DESCRIPTION
TDA8927J
TDA8927ST
TDA8927TH
SW1
1
1
21
digital switch input channel 1
n.c.
-
-
1
not connected
REL1
2
2
22
digital control output channel 1
DIAG
3
3
23
digital open-drain output for overtemperature and
overcurrent report
EN1
4
4
24
digital enable input for channel 1
V
DD1
5
5
2
positive power supply channel 1
BOOT1
6
6
3
bootstrap capacitor channel 1
STAB
-
-
6
decoupling internal stabilizer for logic supply
OUT1
7
7
4
PWM output channel 1
STAB
-
-
7
decoupling internal stabilizer for logic supply
V
SS1
8
8
5
negative power supply channel 1
STAB
9
9
-
decoupling internal stabilizer for logic supply
V
SS2
10
10
8
negative power supply channel 2
OUT2
11
11
9
PWM output channel 2
BOOT2
12
12
10
bootstrap capacitor channel 2
n.c.
-
-
12
not connected
V
DD2
13
13
11
positive power supply channel 2
EN2
14
14
13
digital enable input for channel 2
POWERUP
15
15
14
enable input for switching-on internal reference
sources
REL2
16
16
15
digital control output channel 2
SW2
17
17
16
digital switch input channel 2
LIM
-
-
17
current input for setting maximum load current limit
n.c.
-
-
18
not connected
V
SS(sub)
-
-
19
negative supply (substrate)
n.c.
-
-
20
not connected
2001 Dec 11
7
Philips Semiconductors
Objective specification
Power stage 2
80 W class-D
audio amplifier
TDA8927
handbook, halfpage
TDA8927J
TDA8927ST
MGW142
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
VSS1
VSS2
VDD2
VDD1
EN1
DIAG
REL1
SW1
SW2
REL2
POWERUP
EN2
BOOT1
OUT1
STAB
OUT2
BOOT2
Fig.3
Pin configuration of TDA8927J and
TDA8927ST.
handbook, halfpage
EN1
DIAG
REL1
SW1
n.c.
VSS(sub)
n.c.
LIM
SW2
REL2
POWERUP
EN2
n.c.
VDD1
BOOT1
OUT1
STAB
STAB
VSS1
VSS2
OUT2
BOOT2
VDD2
n.c.
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
TDA8927TH
MGW144
Fig.4 Pin configuration of TDA8927TH.
2001 Dec 11
8
Philips Semiconductors
Objective specification
Power stage 2
80 W class-D
audio amplifier
TDA8927
8
FUNCTIONAL DESCRIPTION
The combination of the TDA8927J and the TDA8929T
produces a two-channel audio power amplifier system
using the class-D technology (see Fig.5). In the TDA8929T
controller device the analog audio input signal is converted
into a digital Pulse Width Modulation (PWM) signal.
The power stage TDA8927 is used for driving the low-pass
filter and the loudspeaker load. It performs a level shift
from the low-power digital PWM signal, at logic levels, to a
high-power PWM signal that switchs between the main
supply lines. A second-order low-pass filter converts the
PWM signal into an analog audio signal across the
loudspeaker.
See the specification of the TDA8929T for a description of
the controller.
8.1
Power stage
The power stage contains the high-power DMOS
switches, the drivers, timing and handshaking between the
power switches and some control logic. For protection, a
temperature sensor and a maximum current detector are
built-in on the chip.
For interfacing with the controller chip the following
connections are used:
Switch (pins SW1 and SW2): digital inputs; switching
from V
SS
to V
SS
+ 12 V and driving the power DMOS
switches
Release (pins REL1 and REL2): digital outputs to
indicate switching from V
SS
to V
SS
+ 12 V, follows
pins SW1 and SW2 with a small delay
Enable (pins EN1 and EN2): digital inputs; at a level of
V
SS
the power DMOS switches are open and the PWM
output is floating; at a level of V
SS
+ 12 V the power
stage is operational and controlled by the switch pin if
pin POWERUP is at V
SS
+ 12 V
Power-up (pin POWERUP): must be connected to a
continuous supply voltage of at least V
SS
+ 5 V with
respect to V
SS
Diagnostics (pin DIAG): digital open-drain output; pulled
to V
SS
if temperature or maximum current is exceeded.
8.2
Protections
Temperature and short-circuit protection sensors are
included in the TDA8927 power stage. These protections
are only operational in combination with the TDA8929T. In
the event that the maximum current or maximum
temperature is exceeded the diagnostic output is
activated. The controller has to take appropriate measures
by shutting down the system.
8.2.1
O
VERTEMPERATURE
If the junction temperature (T
j
) exceeds 150
C, then
pin DIAG becomes LOW. The diagnostic pin is released if
the temperature is dropped to approximately 130
C, so
there is a hysteresis of approximately 20
C.
8.2.2
S
HORT
-
CIRCUIT ACROSS THE LOUDSPEAKER
TERMINALS
When the loudspeaker terminals are short-circuited it will
be detected by the current protection. If the output current
exceeds the maximum output current of 7.5 A, then
pin DIAG becomes LOW. The controller should shut down
the system to prevent damage. Using the TDA8929T the
system is shut down within 1
s, and after 220 ms, it will
attempt to restart the system again. During this time the
dissipation is very low, so the average dissipation during a
short-circuit is practically zero.
For the TDA8927TH the limit value can be externally
adjusted using a resistor. For the maximum value of 7.5 A
pin LIM should be connected to V
SS
. When a resistor R
ext
is connected between pin LIM and V
SS
the maximum
output current can be set at a lower value, using:
Example 1: with R
ext
= 27 k
the current is limited at
3.8 A.
Example 2: with R
ext
= 0
the current is limited at 7.5 A.
In the TDA8927J and the TDA8927ST pin LIM is internally
connected to V
SS
, so I
O(max)
= 7.5 A.
I
O(max)
2.1
10
5
R
ext
28 k
+
---------------------------------
=
2001
Dec
11
9
Philips Semiconductors
Objectiv
e specification
P
o
w
er stage 2
80
W class-D
audio amplifier
TD
A8927
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handbook, full pagewidth
1
4
IN1
-
PWM1
5
IN1
+
IN2
+
IN2
-
mute
mute
SGND
SGND
SGND1
SGND2
3
20
REL1
23
SW1
24
EN1
REL1
SW1
EN1
STAB
DIAGCUR
DIAGTMP
SW2
REL2
PWM2
21
22
19
15
13
EN2
SW2
REL2
EN2
16
14
17
6
11
8
9
7
2
Rfb
Rfb
INPUT
STAGE
INPUT
STAGE
TDA8929T
PWM
MODULATOR
PWM
MODULATOR
MODE
STABI
STAB
POWERUP
OSCILLATOR
MANAGER
VSSA VDDA
VSS1 VDD1
12
10
VSSA VDDA
VSS2(sub)
VSSD
VDD2
VMODE
VSSA
MODE
OSC
ROSC
18
MGU388
DIAG
CONTROL
AND
HANDSHAKE
DRIVER
HIGH
TDA8927J
TEMPERATURE SENSOR
AND
CURRENT PROTECTION
DRIVER
LOW
2
7
+
25 V
-
25 V
VSS1
VSS1
VSSA
VSS2
VSSD
VDDD
VDD2
VDDA
6
1
4
9
8
10
VDD2 VDD1
13
5
CONTROL
AND
HANDSHAKE
DRIVER
HIGH
DRIVER
LOW
14
11
12
17
16
3
15
BOOT1
OUT1
OUT2
BOOT2
SGND
(0 V)
Vi(1)
Vi(2)
Fig.5 Typical application schematic of the class-D system using TDA8929T and the TDA8927J.
2001 Dec 11
10
Philips Semiconductors
Objective specification
Power stage 2
80 W class-D
audio amplifier
TDA8927
8.3
BTL operation
BTL operation can be achieved by driving the audio input
channels of the controller in the opposite phase and by
connecting the loudspeaker with a BTL output filter
between the two PWM output pins of the power stage
(see Fig.6).
In this way the system operates as a mono BTL amplifier
and with the same loudspeaker impedance a four times
higher output power can be obtained.
For more information see Chapter 15.
MGU386
handbook, full pagewidth
CONTROL
AND
HANDSHAKE
DRIVER
HIGH
TDA8927J
TEMPERATURE SENSOR
AND
CURRENT PROTECTION
DRIVER
LOW
temp
current
4
7
VSS1
VSS1 VSS2
VDD2
6
1
2
9
8
10
VDD2 VDD1
13
5
CONTROL
AND
HANDSHAKE
DRIVER
HIGH
DRIVER
LOW
14
11
12
17
16
3
15
EN1
DIAG
REL1
SW1
SW2
REL2
POWERUP
EN2
BOOT1
OUT1
STAB
OUT2
BOOT2
SGND
(0 V)
Fig.6 Mono BTL application.
2001 Dec 11
11
Philips Semiconductors
Objective specification
Power stage 2
80 W class-D
audio amplifier
TDA8927
9
LIMITING VALUES
In accordance with the Absolute Maximum Rate System (IEC 60134).
Notes
1. Human Body Model (HBM); R
s
= 1500
; C = 100 pF.
2. Machine Model (MM); R
s
= 10
; C = 200 pF; L = 0.75
H.
10 THERMAL CHARACTERISTICS
11 QUALITY SPECIFICATION
In accordance with
"SNW-FQ611-part D" if this type is used as an audio amplifier.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
P
supply voltage
-
30
V
V
P(sc)
supply voltage for
short-circuits across the load
-
30
V
I
ORM
repetitive peak current in
output pins
-
7.5
A
T
stg
storage temperature
-
55
+150
C
T
amb
ambient temperature
-
40
+85
C
T
vj
virtual junction temperature
-
150
C
V
es(HBM)
electrostatic discharge
voltage (HBM)
note 1
all pins with respect to V
DD
(class A)
-
500
+500
V
all pins with respect to V
SS
(class A1)
-
1500
+1500
V
all pins with respect to each other
(class A1)
-
1500
+1500
V
V
es(MM)
electrostatic discharge
voltage (MM)
note 2
all pins with respect to V
DD
(class B)
-
250
+250
V
all pins with respect to V
SS
(class B)
-
250
+250
V
all pins with respect to each other
(class B)
-
250
+250
V
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th(j-a)
thermal resistance from junction to ambient
in free air
TDA8927J
40
K/W
TDA8927ST
40
K/W
TDA8927TH
40
K/W
R
th(j-c)
thermal resistance from junction to case
in free air
TDA8927J
1.0
K/W
TDA8927ST
1.0
K/W
TDA8927TH
1
K/W
2001 Dec 11
12
Philips Semiconductors
Objective specification
Power stage 2
80 W class-D
audio amplifier
TDA8927
12 DC CHARACTERISTICS
V
P
=
25 V; T
amb
= 25
C; measured in test diagram of Fig.8; unless otherwise specified.
Notes
1. The circuit is DC adjusted at V
P
=
15 to
30 V.
2. Temperature sensor or maximum current sensor activated.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply
V
P
supply voltage
note 1
15
25
30
V
I
q(tot)
total quiescent current
no load connected
-
35
45
mA
outputs floating
-
5
10
mA
Internal stabilizer logic supply (pin STAB or pins STAB1 and STAB2)
V
O(STAB)
stabilizer output voltage
11
13
15
V
Switch inputs (pins SW1 and SW2)
V
IH
HIGH-level input voltage
referenced to V
SS
10
-
V
STAB
V
V
IL
LOW-level input voltage
referenced to V
SS
0
-
2
V
Control outputs (pins REL1 and REL2)
V
OH
HIGH-level output voltage
referenced to V
SS
10
-
V
STAB
V
V
OL
LOW-level output voltage
referenced to V
SS
0
-
2
V
Diagnostic output (pin DIAG, open-drain)
V
OL
LOW-level output voltage
I
DIAG
= 1 mA; note 2
0
-
1.0
V
I
LO
leakage output current
no error condition
-
-
50
A
Enable inputs (pins EN1 and EN2)
V
IH
HIGH-level input voltage
referenced to V
SS
-
9
V
STAB
V
V
IL
LOW-level input voltage
referenced to V
SS
0
5
-
V
V
EN(hys)
hysteresis voltage
-
4
-
V
I
I(EN)
input current
-
-
300
A
Switching-on input (pin POWERUP)
V
POWERUP
operating voltage
referenced to V
SS
5
-
12
V
I
I(POWERUP)
input current
V
POWERUP
= 12 V
-
100
170
A
Temperature protection
T
diag
temperature activating diagnostic
V
DIAG
= V
DIAG(LOW)
150
-
-
C
T
hys
hysteresis on temperature
diagnostic
V
DIAG
= V
DIAG(LOW)
-
20
-
C
2001 Dec 11
13
Philips Semiconductors
Objective specification
Power stage 2
80 W class-D
audio amplifier
TDA8927
13 AC CHARACTERISTICS
Notes
1. V
P
=
25 V; R
L
= 4
; f
i
= 1 kHz; T
amb
= 25
C; measured in reference design in Figs 9 and 11; unless otherwise
specified.
2. Indirectly measured; based on R
ds(on)
measurement.
3. Total Harmonic Distortion (THD) is measured in a bandwidth of 22 Hz to 22 kHz. When distortion is measured using
a low-order low-pass filter a significantly higher value will be found, due to the switching frequency outside the audio
band.
4. Efficiency for power stage; output power measured across the loudspeaker load.
5. V
P
=
25 V; R
L
= 8
; f
i
= 1 kHz; T
amb
= 25
C; measured in reference design in Figs 9 and 11; unless otherwise
specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Single-ended application; note 1
P
o
output power
R
L
= 4
; THD = 0.5%; V
P
=
25 V
50
(2)
55
-
W
R
L
= 4
; THD = 10%; V
P
=
25 V
60
(2)
65
-
W
R
L
= 4
; THD = 0.5%; V
P
=
27 V
60
(2)
65
-
W
R
L
= 4
; THD = 10%; V
P
=
27 V
74
(2)
80
-
W
THD
total harmonic distortion
P
o
= 1 W; note 3
f
i
= 1 kHz
-
0.01
0.05
%
f
i
= 10 kHz
-
0.1
-
%
G
v(cl)
closed-loop voltage gain
29
30
31
dB
efficiency
P
o
= 30 W; f
i
= 1 kHz; note 4
-
94
-
%
Mono BTL application; note 5
P
o
output power
R
L
= 8
; THD = 0.5%; V
P
=
25 V
100
(2)
112
-
W
R
L
= 8
; THD = 10%; V
P
=
25 V
128
(2)
140
-
W
R
L
= 4
; THD = 0.5%; V
P
=
17 V
80
(2)
87
-
W
R
L
= 4
; THD = 10%; V
P
=
17 V
100
(2)
110
-
W
THD
total harmonic distortion
P
o
= 1 W; note 3
f
i
= 1 kHz
-
0.01
0.05
%
f
i
= 10 kHz
-
0.1
-
%
G
v(cl)
closed loop voltage gain
35
36
37
dB
efficiency
P
o
= 30 W; f
i
= 1 kHz; note 4
-
94
-
%
2001 Dec 11
14
Philips Semiconductors
Objective specification
Power stage 2
80 W class-D
audio amplifier
TDA8927
14 SWITCHING CHARACTERISTICS
V
P
=
25 V; T
amb
= 25
C; measured in Fig.8; unless otherwise specified.
Note
1. When used in combination with the TDA8929T controller, the effective minimum pulse width during clipping is
0.5t
W(min)
.
14.1
Duty factor
For the practical useable minimum and maximum duty factor (
) which determines the maximum output power:
100% <
<
100%
Using the typical values: 3.5% <
< 96.5%.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
PWM outputs (pins OUT1 and OUT2); see Fig.7
t
r
rise time
-
30
-
ns
t
f
fall time
-
30
-
ns
t
blank
blanking time
-
70
-
ns
t
PD
propagation delay
from pin SW to pin PWM
-
20
-
ns
t
W(min)
minimum pulse width
note 1
-
220
270
ns
R
ds(on)
on-resistance of the output
transistors
-
0.2
0.3
t
W(min)
f
osc
2
-------------------------------
1
t
W(min)
f
osc
2
-------------------------------
2001 Dec 11
15
Philips Semiconductors
Objective specification
Power stage 2
80 W class-D
audio amplifier
TDA8927
handbook, full pagewidth
MGW145
PWM
output
(V)
VDD
VSS
0 V
tblank
tf
tr
1/fosc
100 ns
VSTAB
VSS
VSW
(V)
tPD
VSTAB
VSS
VREL
(V)
Fig.7 Timing diagram PWM output, switch and release signals.
2001
Dec
11
16
Philips Semiconductors
Objectiv
e specification
P
o
w
er stage 2
80
W class-D
audio amplifier
TD
A8927
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15
TEST AND
APPLICA
TION INFORMA
TION
a
ndbook, full pagewidth
12 k
15 nF
MGW184
15 nF
100
nF
CONTROL
AND
HANDSHAKE
DRIVER
HIGH
TDA8927J
TEMPERATURE SENSOR
AND
CURRENT PROTECTION
DRIVER
LOW
temp
current
4
7
VSS1
VSS1
VREL2
VSS2
VDD2
6
1
2
9
8
10
VDD2
VDD1
13
5
CONTROL
AND
HANDSHAKE
DRIVER
HIGH
DRIVER
LOW
14
11
12
17
16
3
15
EN1
DIAG
REL1
SW1
SW2
REL2
POWERUP
EN2
BOOT1
2VDD
OUT1
STAB
OUT2
VOUT2
VOUT1
BOOT2
12 V
V
V
V
VSW2
VREL1
V
VSW1
VEN
12 V
0
VDIAG
V
VSTAB
V
12 V
0
Fig.8 Test diagram.
2001 Dec 11
17
Philips Semiconductors
Objective specification
Power stage 2
80 W class-D
audio amplifier
TDA8927
15.1
BTL application
When using the system in a mono BTL application (for more output power), the inputs of both channels of the PWM
modulator must be connected in parallel; the phase of one of the inputs must be inverted. In principle the loudspeaker
can be connected between the outputs of the two single-ended demodulation filters.
15.2
Remarks
The case of the package of the TDA8927J/ST and the heatsink of the TDA8927TH are internally connected to V
SS
.
15.3
Output power
The output power in single-ended applications can be estimated using the formulae:
The maximum current
should not exceed 7.5 A.
The output power in BTL applications can be estimated using the formulae:
The maximum current
should not exceed 7.5 A.
Where:
R
L
= load impedance
R
s
= series resistance of filter coil
P
o(1%)
= output power just at clipping
The output power at THD = 10%: P
o(10%)
= 1.25
P
o(1%)
.
15.4
Reference designs
The reference design for a two-chip class-D audio amplifier for TDA8926J or TDA8927J and TDA8929T is shown in
Fig.9. The Printed-Circuit Board (PCB) layout is shown in Fig.10. The bill of materials is given in Table 1.
The reference design for a two-chip class-D audio amplifier for TDA8926TH or TDA8927TH and TDA8929T is shown in
Fig.11. The PCB layout is shown in Fig.12.
P
o(1%)
R
L
R
L
R
ds(on)
R
s
+
+
(
)
------------------------------------------------
V
P
1
t
W(min)
f
osc
(
)
2
2
R
L
--------------------------------------------------------------------------------------------------------------------------
=
I
O(max)
V
P
1
t
W(min)
f
osc
(
)
[
]
R
L
R
ds(on)
R
s
+
+
----------------------------------------------------------------
=
P
o(1%)
R
L
R
L
2
R
ds(on)
R
s
+
(
)
+
----------------------------------------------------------
2V
P
1
t
W(min)
f
osc
(
)
2
2
R
L
----------------------------------------------------------------------------------------------------------------------------------------
=
I
O(max)
2V
P
1
t
W(min)
f
osc
(
)
[
]
R
L
2
R
ds(on)
R
s
+
(
)
+
---------------------------------------------------------------------
=
2001
Dec
11
18
Philips Semiconductors
Objectiv
e specification
P
o
w
er stage 2
80
W class-D
audio amplifier
TD
A8927
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handbook, full pagewidth
MLD633
39 k
R19
39 k
R7
10 k
220 nF
C2
R20
1 k
R10
Sumida 33
H
CDRH127-330
L4
Sumida 33
H
CDRH127-330
L2
GND
220 nF
C44
220 nF
C1
3
6
17
PWM2
5
4
8
9
10
12
15
n.c.
1
1 nF
C29
input 2
input 1
J5
J6
D1
(5.6 V)
D2
(7.5 V)
IN1
+
IN1
-
GND
2
11
SGND1
SGND2
S1
VSSA
VSS1
VSS2
VDDA
VDD2
VDD1
GND
1
2
1
2
1
2
QGND
QGND
QGND
QGND
OUT1
-
OUT1
+
OUT1
+
OUT2
-
OUT2
-
OUT2
+
BOOT2
BOOT1
OUT1
OUT2
VDDD
VDD1
VDD2
VSS2
VSS1
VDDD
VSSD
VSSA VSSD
27 k
R1
7
220 nF
C3
OSC
POWERUP
VSSA
220 nF
C5
MODE
VDDA
R24
200 k
VDDD
on
mute
off
U2
TDA8929T
CONTROLLER
C22
330 pF
C27
470 nF
C4
220 nF
C7
220 nF
C14
470 nF
C18
1 nF
C19
1 nF
C20
1 nF
C21
1 nF
C16
470 nF
C6
220 nF
C9
15 nF
C8
15 nF
C43
180 pF
IN2
+
IN2
-
R6
10 k
C26
470 nF
R4
10 k
1 nF
C28
C24
470 nF
R5
10 k
J3
J1
QGND
QGND
inputs
outputs
power supply
mode select
J4
J2
VSS
C25
470 nF
C23
330 pF
R11
5.6
C10
560 pF
VSSD
VDDD VSSD
R12
5.6
R13
5.6
R14
5.6
C11
560 pF
C12
560 pF
C13
560 pF
R22
9.1 k
VSSD
VSSA
VDDA
VDDD
C31
1 nF
C30
1 nF
C33
220 nF
C35
1500
F
(35 V)
R21
10 k
C32
220 nF
C34
1500
F
(35 V)
C38
220 nF
C39
220 nF
C41
47
F
(35 V)
C36
220 nF
C37
220 nF
C40
47
F
(35 V)
GND
QGND
QGND
bead
L6
L5
bead
L7
bead
GND
VDD
VSS
+
25 V
-
25 V
1
2
3
13
SW2
14
REL2
16
EN2
SW2
REL2
EN2
21
PWM1
23
SW1
24
15
9
3
U1
TDA8926J
or
TDA8927J
POWER STAGE
17
16
14
4
2
1
8
10
13
5
6
7
11
12
REL1
20
EN1
SW1
REL1
EN1
19
STAB
STAB
18
VSSD
22
DIAGCUR
DIAG
R16
24
R15
24
4 or 8
SE
4 or 8
SE
8
BTL
C17
220 nF
C15
220 nF
Fig.9 Two-chip class-D audio amplifier application diagram for TDA8926J or TDA8927J and TDA8929T.
R21 and R22 are only necessary in BTL applications with asymmetrical supply.
BTL: remove R6, R7, C23, C26 and C27 and close J5 and J6.
C22 and C23 influence the low-pass frequency response and should be tuned with the real load (loudspeaker).
Inputs floating or inputs referenced to QGND (close J1 and J4) or referenced to V
SS
(close J2 and J3) for an input signal ground reference.
2001
Dec
11
19
Philips Semiconductors
Objectiv
e specification
P
o
w
er stage 2
80
W class-D
audio amplifier
TD
A8927
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ha
ndbook, full pagewidth
MLD634
C24
D1
TDA8926J/27J & TDA8929T
Copper top, top view
Copper bottom, top view
Silk screen top, top view
Silk screen bottom, top view
D2
L7
L5
In1
GND
In2
Out1
Out2
state of D art
Version 21 03-2001
U1
C25
C34
C35
C40
C26
C27
L6
ON
MUTE
OFF
C41
C16
C14
S1
R20
R1
R21
L2
L4
R22
C38
U2
C39
C36
R24
R5
R4
R6
R7
C2
C31
C30
C18
C19
C20
C21
C1
C9
C8
J4
J5
J6
J1
J3
J2
R19
C13
C33
C32
C11
C29
C28
R14
R12
C3
C43
R10
C12
C17
R16
C15
R15
R13
R11
C10
C5
C37
C22
C23
C44
V
DD
V
SS
In1
Out1
Out2
GND
In2
QGND
VDD
VSS
C7
C4
C6
Fig.10 Printed-circuit board layout for TDA8926J or TDA8927J and TDA8929T.
2001
Dec
11
20
Philips Semiconductors
Objectiv
e specification
P
o
w
er stage 2
80
W class-D
audio amplifier
TD
A8927
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MGW232
39 k
R1
30 k
R7
10 k
100 nF
C12
R2
1 k
R8
5.6
R11
Sumida 33
H
CDRH127-330
L4
Sumida 33
H
CDRH127-330
L2
L1
bead
L3
bead
GND
100 nF
C1
220 nF
C11
3
6
17
PWM2
5
4
8
9
10
12
15
n.c.
1
1 nF
C10
input 2
input 1
J5
J6
D1
(5.6 V)
IN1
+
IN1
-
GND
2
11
SGND1
SGND2
S1
VSSA
VSSD
VSS1
VSS2
VDDA
VDD2
VDD1
GND
1
2
1
2
1
2
QGND
QGND
QGND
QGND
OUT1
-
OUT1
+
OUT1
+
OUT2
-
OUT2
-
OUT2
+
BOOT2
BOOT1
OUT1
OUT2
VDDD
VDD1
VDD2
VSS2
VSS1
VDDD
VSSD
VSSA
VSSD
27 k
R3
7
220 nF
C2
OSC
POWERUP
VSSA
100 nF
C14
MODE
VDDA
R18
200 k
D2
(7.5 V)
VDDD
on
mute
off
U2
TDA8929T
CONTROLLER
C3
330 pF
C8
1
F
C13
100 nF
C27
100 nF
C36
470 nF
C40
1 nF
C41
1 nF
C42
1 nF
C43
1 nF
C37
470 nF
C28
100
nF
C33
15 nF
C26
15 nF
C15
180 pF
IN2
+
IN2
-
R6
10 k
C7
1
F
R5
10 k
1 nF
C9
C6
1
F
R4
10 k
J3
J1
QGND
QGND
inputs
outputs
power supply
mode select
J4
J2
VSS
C5
1
F
C4
330 pF
R12
5.6
C24
560 pF
VSSD
VDDD VSSD
R13
5.6
R14
5.6
R15
5.6
C25
560 pF
C34
560 pF
C35
560 pF
R10
9.1 k
VSSD
VSSA
VDDA
VDDD
C17
1 nF
C16
1 nF
R9
10 k
C20
100 nF
C21
100 nF
C23
47
F
(35 V)
C18
100 nF
C19
100 nF
C22
47
F
(35 V)
GND
QGND
QGND
QGND
bead
L6
L5
bead
L7
bead
GND
C30
100 nF
C32
1500
F
(35 V)
C29
100 nF
C31
1500
F
(35 V)
VDD
VSS
+
25 V
-
25 V
1
2
3
13
SW2
14
REL2
16
EN2
SW2
REL2
EN2
21
PWM1
23
SW1
24
14
6
23
U1
TDA8926TH
or
TDA8927TH
POWER STAGE
16
15
13
24
22
21
5
8
11
2
3
4
9
10
REL1
20
EN1
SW1
REL1
EN1
19
STAB
STAB
19
VSS(sub)
VSSD
17
LIM
VSSD
7
STAB
18
22
DIAGCUR
DIAG
R17
5.6
R16
5.6
4 or 8
SE
4 or 8
SE
8
BTL
C39
220 nF
C38
220 nF
1, 12, 18, 20
n.c.
Fig.11 Two-chip class-D audio amplifier application diagram for TDA8926TH or TDA8927TH and TDA8929T.
R9 and R10 are only necessary in BTL applications with asymmetrical supply.
BTL: remove R6, R7, C4, C7 and C8 and close J5 and J6.
Demodulation coils L2 and L4 should be matched in BTL.
Inputs floating or inputs referenced to QGND (close J1 and J4) or referenced to V
SS
(close J2 and J3).
2001
Dec
11
21
Philips Semiconductors
Objectiv
e specification
P
o
w
er stage 2
80
W class-D
audio amplifier
TD
A8927
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d
book, full pagewidth
MGW147
TDA8926TH/27TH
TDA8929T
Copper top, top view
Copper bottom, top view
Silk screen top, top view
Silk screen bottom, top view
In1
In2
State of D art
ON
MU
OFF
S1
L4
L3
C31
C32
C22
D1
C23
C37
C36
L6
Version 2CTH1
L5
L1
C29
C2
C9
C10
C8
C7
R4
R5
R7
R6
R3
C30
C35
C1 C15
C12
C21
J6
J5
C19
C13
L7
C3
C4
C5
C6
C18
C11
R11
C20
R8
R1 R2
C14
R12
R14
R13
R17
R16
R10
R9
C39
C43
J4
J2
J3
J1
QGND
C42 C41 C40 C16 C17
C38
R15
C25
C24
C34
C26
C33
Jan 2001
U1
U2
C27
C28
L5
GND
Out1
Out2
VDD
VSS
Fig.12 Printed-circuit board layout for TDA8926TH or TDA8927TH and TDA8929T.
2001 Dec 11
22
Philips Semiconductors
Objective specification
Power stage 2
80 W class-D
audio amplifier
TDA8927
15.5
Reference design bill of materials
Table 1
Two-chip class-D audio amplifier PCB (Version 2.1; 03-2001) for TDA8926J or TDA8927J and TDA8929T
(see Figs 9 and 10)
COMPONENT
DESCRIPTION
VALUE
COMMENTS
In1 and In2
Cinch input connectors
2
Farnell: 152-396
Out1, Out2, V
DD
,
GND and V
SS
supply/output connectors
2
Augat 5KEV-02;
1
Augat 5KEV-03
S1
on/mute/off switch
PCB switch Knitter ATE 1 E M-O-M
U1
power stage IC
TDA8926J/27J
DBS17P package
U2
controller IC
TDA8929T
SO24 package
L2 and L4
demodulation filter coils
33
H
2
Sumida CDRH127-330
L5, L6 and L7
power supply ferrite beads
3
Murata BL01RN1-A62
C1 and C2
supply decoupling capacitors for
V
DD
to V
SS
of the controller
220 nF/63 V
2
SMD1206
C3
clock decoupling capacitor
220 nF/63 V
SMD1206
C4
12 V decoupling capacitor of the
controller
220 nF/63 V
SMD1206
C5
12 V decoupling capacitor of the power
stage
220 nF/63 V
SMD1206
C6 and C7
supply decoupling capacitors for
V
DD
to V
SS
of the power stage
220 nF/63 V
SMD1206
C8 and C9
bootstrap capacitors
15 nF/50 V
2
SMD0805
C10, C11,
C12 and C13
snubber capacitors
560 pF/100 V
4
SMD0805
C14 and C16
demodulation filter capacitors
470 nF/63 V
2
MKT
C15 and C17
resonance suppress capacitors
220 nF/63 V
2
SMD1206
C18, C19,
C20 and C21
common mode HF coupling capacitors
1 nF/50 V
4
SMD0805
C22 and C23
input filter capacitors
330 pF/50 V
2
SMD1206
C24, C25,
C26 and C27
input capacitors
470 nF/63 V
4
MKT
C28, C29,
C30 and C31
common mode HF coupling capacitors
1 nF/50 V
2
SMD0805
C32 and C33
power supply decoupling capacitors
220 nF/63 V
2
SMD1206
C34 and C35
power supply electrolytic capacitors
1500
F/35 V
2
Rubycon ZL very low ESR (large
switching currents)
C36, C37,
C38 and C39
analog supply decoupling capacitors
220 nF/63 V
4
SMD1206
C40 and C41
analog supply electrolytic capacitors
47
F/35 V
2
Rubycon ZA low ESR
C43
diagnostic capacitor
180 pF/50 V
SMD1206
C44
mode capacitor
220 nF/63 V
SMD1206
D1
5.6 V zener diode
BZX79C5V6
DO-35
D2
7.5 V zener diode
BZX79C7V5
DO-35
R1
clock adjustment resistor
27 k
SMD1206
2001 Dec 11
23
Philips Semiconductors
Objective specification
Power stage 2
80 W class-D
audio amplifier
TDA8927
R4, R5,
R6 and R7
input resistors
10 k
4
SMD1206
R10
diagnostic resistor
1 k
SMD1206
R11, R12,
R13 and R14
snubber resistors
5.6
; >0.25 W
4
SMD1206
R15 and R16
resonance suppression resistors
24
2
SMD1206
R19
mode select resistor
39 k
SMD1206
R20
mute select resistor
39 k
SMD1206
R21
resistor needed when using an
asymmetrical supply
10 k
SMD1206
R22
resistor needed when using an
asymmetrical supply
9.1 k
SMD1206
R24
bias resistor for powering-up the power
stage
200 k
SMD1206
COMPONENT
DESCRIPTION
VALUE
COMMENTS
15.6
Curves measured in reference design
handbook, halfpage
10
2
10
1
10
-
1
10
-
3
10
-
2
MLD627
10
-
2
10
-
1
1
Po (W)
THD
+
N
(%)
10
10
2
10
3
(1)
(2)
(3)
Fig.13 THD + N as a function of output power.
2
8
SE; V
P
=
25 V:
(1) 10 kHz.
(2) 1 kHz.
(3) 100 Hz.
handbook, halfpage
MLD628
10
10
2
10
3
10
4
10
5
10
2
10
1
10
-
1
10
-
3
10
-
2
fi (Hz)
THD
+
N
(%)
(1)
(2)
Fig.14 THD + N as a function of input frequency.
2
8
SE; V
P
=
25 V:
(1) P
o
= 10 W.
(2) P
o
= 1 W.
2001 Dec 11
24
Philips Semiconductors
Objective specification
Power stage 2
80 W class-D
audio amplifier
TDA8927
handbook, halfpage
10
2
10
1
10
-
1
10
-
3
10
-
2
MLD629
10
-
2
10
-
1
1
Po (W)
THD
+
N
(%)
10
10
2
10
3
(1)
(2)
(3)
Fig.15 THD + N as a function of output power.
2
4
SE; V
P
=
25 V:
(1) 10 kHz.
(2) 1 kHz.
(3) 100 Hz.
Fig.16 THD + N as a function of output power.
handbook, halfpage
MLD630
10
10
2
10
3
10
4
10
5
10
2
10
1
10
-
1
10
-
3
10
-
2
fi (Hz)
THD
+
N
(%)
(1)
(2)
Fig.16 THD + N as a function of input frequency.
2
4
SE; V
P
=
25 V:
(1) P
o
= 10 W.
(2) P
o
= 1 W.
handbook, halfpage
10
2
10
1
10
-
1
10
-
3
10
-
2
MLD631
10
-
2
10
-
1
1
Po (W)
THD
+
N
(%)
10
10
2
10
3
(1)
(2)
(3)
Fig.17 THD + N as a function of output power.
1
8
BTL; V
P
=
25 V:
(1) 10 kHz.
(2) 1 kHz.
(3) 100 Hz.
handbook, halfpage
MLD632
10
10
2
10
3
10
4
10
5
10
2
10
1
10
-
1
10
-
3
10
-
2
fi (Hz)
THD
+
N
(%)
(1)
(2)
Fig.18 THD + N as a function of input frequency.
1
8
BTL; V
P
=
25 V:
(1) P
o
= 10 W.
(2) P
o
= 1 W.
2001 Dec 11
25
Philips Semiconductors
Objective specification
Power stage 2
80 W class-D
audio amplifier
TDA8927
handbook, halfpage
0
25
5
10
15
20
MLD609
10
-
2
10
-
1
1
(2)
Po (W)
P
(W)
10
10
2
10
3
(1)
(3)
Fig.19 Power dissipation as a function of output
power.
V
P
=
25 V; f
i
= 1 kHz:
(1) 2
4
SE.
(2) 1
8
BTL.
(3) 2
8
SE.
handbook, halfpage
0
(3)
(1)
(2)
150
100
0
20
40
60
80
30
(%)
Po (W)
60
90
120
MLD610
Fig.20 Efficiency as a function of output power.
V
P
=
25 V; f
i
= 1 kHz:
(1) 2
4
SE.
(2) 1
8
BTL.
(3) 2
8
SE.
handbook, halfpage
10
(3)
(4)
(1)
(2)
35
200
0
40
80
120
160
15
Po
(W)
VP (V)
20
25
30
MLD611
Fig.21 Output power as a function of supply
voltage.
THD + N = 0.5%; f
i
= 1 kHz:
(1) 1
4
BTL.
(2) 1
8
BTL.
(3) 2
4
SE.
(4) 2
8
SE.
handbook, halfpage
10
(3)
(4)
(1)
(2)
35
200
0
40
80
120
160
15
Po
(W)
VP (V)
20
25
30
MLD612
Fig.22 Output power as a function of supply
voltage.
THD + N = 10%; f
i
= 1 kHz:
(1) 1
4
BTL.
(2) 1
8
BTL.
(3) 2
4
SE.
(4) 2
8
SE.
2001 Dec 11
26
Philips Semiconductors
Objective specification
Power stage 2
80 W class-D
audio amplifier
TDA8927
handbook, halfpage
-
100
0
-
80
-
60
-
40
-
20
MLD613
10
2
10
fi (Hz)
cs
(dB)
10
3
10
4
10
5
(1)
(2)
Fig.23 Channel separation as a function of input
frequency.
2
8
SE; V
P
=
25 V:
(1) P
o
= 10 W.
(2) P
o
= 1 W.
handbook, halfpage
-
100
0
-
80
-
60
-
40
-
20
MLD614
10
2
10
fi (Hz)
cs
(dB)
10
3
10
4
10
5
(1)
(2)
Fig.24 Channel separation as a function of input
frequency.
2
4
SE; V
P
=
25 V:
(1) P
o
= 10 W.
(2) P
o
= 1 W.
handbook, halfpage
20
45
25
30
35
40
MLD615
10
2
10
fi (Hz)
G
(dB)
10
3
10
4
10
5
(1)
(2)
(3)
Fig.25 Gain as a function of input frequency.
V
P
=
25 V; V
i
= 100 mV;
R
s
= 10 k
/C
i
= 330 pF:
(1) 1
8
BTL.
(2) 2
8
SE.
(3) 2
4
SE.
handbook, halfpage
20
45
25
30
35
40
MLD616
10
2
10
fi (Hz)
G
(dB)
10
3
10
4
10
5
(1)
(2)
(3)
Fig.26 Gain as a function of input frequency.
V
P
=
25 V; V
i
= 100 mV;
R
s
= 0
:
(1) 1
8
BTL.
(2) 2
8
SE.
(3) 2
4
SE.
2001 Dec 11
27
Philips Semiconductors
Objective specification
Power stage 2
80 W class-D
audio amplifier
TDA8927
handbook, halfpage
-
100
0
-
80
-
60
-
40
-
20
MLD617
10
2
10
fi (Hz)
SVRR
(dB)
10
3
10
4
10
5
(1)
(2)
(3)
Fig.27 SVRR as a function of input frequency.
V
P
=
25 V; V
ripple
= 2 V (p-p) with respect to GND:
(1) Both supply lines in anti-phase.
(2) Both supply lines in phase.
(3) One supply line rippled.
handbook, halfpage
0
5
0
-
100
-
80
-
60
-
40
-
20
1
(1)
(3)
SVRR
(dB)
Vripple (V)
2
3
4
MLD618
(2)
Fig.28 SVRR as a function of V
ripple
(p-p).
V
P
=
25 V; V
ripple
with respect to GND:
(1) f
ripple
= 1 kHz.
(2) f
ripple
= 100 Hz.
(3) f
ripple
= 10 Hz.
handbook, halfpage
0
10
20
30
VP (V)
Iq
(mA)
37.5
100
0
20
40
60
80
MLD619
Fig.29 Quiescent current as a function of supply
voltage.
R
L
= open.
handbook, halfpage
0
10
20
30
VP (V)
fclk
(kHz)
40
380
340
348
356
364
372
MLD620
Fig.30 Clock frequency as a function of supply
voltage.
R
L
= open.
2001 Dec 11
28
Philips Semiconductors
Objective specification
Power stage 2
80 W class-D
audio amplifier
TDA8927
handbook, halfpage
0
5
1
2
3
4
MLD621
10
-
1
10
-
2
Po (W)
Vripple
(V)
1
10
10
2
(1)
(2)
Fig.31 Supply voltage ripple as a function of output
power.
V
P
=
25 V; 1500
F per supply line; f
i
= 10 Hz:
(1) 1
4
SE.
(2) 1
8
SE.
handbook, halfpage
5
0
10
10
4
MLD622
10
2
10
3
fi (Hz)
SVRR
(%)
1
2
3
4
(1)
(2)
Fig.32 SVRR as a function of input frequency.
V
P
=
25 V; 1500
F per supply line:
(1) P
o
= 30 W into 1
4
SE.
(2) P
o
= 15 W into 1
8
SE.
handbook, halfpage
600
100
(3)
fclk (kHz)
THD
+
N
(%)
200
300
400
500
10
1
10
-
1
10
-
2
10
-
3
MLD623
(1)
(2)
Fig.33 THD + N as a function of clock frequency.
V
P
=
25 V; P
o
= 1 W in 2
8
:
(1) 10 kHz.
(2) 1 kHz.
(3) 100 Hz.
handbook, halfpage
100
600
50
0
10
20
30
40
200
Po
(W)
fclk (kHz)
300
400
500
MLD624
Fig.34 Output power as a function of clock
frequency.
V
P
=
25 V; R
L
= 2
8
; f
i
= 1 kHz; THD + N = 10%.
2001 Dec 11
29
Philips Semiconductors
Objective specification
Power stage 2
80 W class-D
audio amplifier
TDA8927
handbook, halfpage
100
600
150
0
30
60
90
120
200
Iq
(mA)
fclk (kHz)
300
400
500
MLD625
Fig.35 Quiescent current as a function of clock
frequency.
V
P
=
25 V; R
L
= open.
handbook, halfpage
100
600
1000
0
200
400
600
800
200
Vr(PWM)
(mV)
fclk (kHz)
300
400
500
MLD626
Fig.36 PWM residual voltage as a function of clock
frequency.
V
P
=
25 V; R
L
= 2
8
.
2001 Dec 11
30
Philips Semiconductors
Objective specification
Power stage 2
80 W class-D
audio amplifier
TDA8927
16 PACKAGE OUTLINES
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
SOT243-1
0
5
10 mm
scale
D
L
E
A
c
A
2
L
3
Q
w
M
b
p
1
d
D
Z
e
e
x
h
1
17
j
Eh
non-concave
97-12-16
99-12-17
DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)
SOT243-1
view B: mounting base side
m
2
e
v
M
B
UNIT
A
e
1
A
2
b
p
c
D
(1)
E
(1)
Z
(1)
d
e
D
h
L
L
3
m
mm
17.0
15.5
4.6
4.4
0.75
0.60
0.48
0.38
24.0
23.6
20.0
19.6
10
2.54
v
0.8
12.2
11.8
1.27
e
2
5.08
2.4
1.6
E
h
6
2.00
1.45
2.1
1.8
3.4
3.1
4.3
12.4
11.0
Q
j
0.4
w
0.03
x
2001 Dec 11
31
Philips Semiconductors
Objective specification
Power stage 2
80 W class-D
audio amplifier
TDA8927
UNIT
A
e
1
e
2
A
2
b
p
c
E
(1)
D
(1)
Z
(1)
d
e
L
L
1
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
13.5
4.6
4.4
0.75
0.60
0.48
0.38
24.0
23.6
20.0
19.6
10
2.54
12.2
11.8
1.27
2.54
4.7
4.1
E
h
D
h
6
2.00
1.45
2.1
1.8
3.4
3.1
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
4.7
4.1
SOT577-1
0
5
10 mm
scale
Q
j
0.4
w
0.6
v
0.03
x
D
E
A
L
1
Q
L
c
A
2
w
M
b
p
1
d
Z
e
2
e
e
1
17
j
00-01-19
00-03-15
RDBS17P: plastic rectangular-DIL-bent-SIL power package; 17 leads (row spacing 2.54 mm)
SOT577-1
v
M
D
x
h
Eh
non-concave
view B: mounting base side
B
2001 Dec 11
32
Philips Semiconductors
Objective specification
Power stage 2
80 W class-D
audio amplifier
TDA8927
UNIT
A4
(1)
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
00-03-24
IEC
JEDEC
EIAJ
mm
+
0.12
-
0.02
3.5
0.35
DIMENSIONS (mm are the original dimensions)
Notes
1. Limits per individual lead.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
SOT566-2
0
5
10 mm
scale
HSOP24: plastic, heatsink small outline package; 24 leads; low stand-off height
SOT566-2
A
max.
detail X
A2
3.5
3.2
D2
1.1
0.9
HE
14.5
13.9
Lp
1.1
0.8
Q
1.7
1.5
2.7
2.2
v
0.25
w
0.25
y
Z
8
0
0.07
x
0.03
D1
13.0
12.6
E1
6.2
5.8
E2
2.9
2.5
bp
c
0.32
0.23
e
1.0
D
(2)
16.0
15.8
E
(2)
11.1
10.9
0.53
0.40
A3
A4
A2
(A3)
Lp
A
Q
D
y
x
HE
E
c
v
M
A
X
A
bp
w
M
Z
D1
D2
E2
E1
e
24
13
1
12
pin 1 index
2001 Dec 11
33
Philips Semiconductors
Objective specification
Power stage 2
80 W class-D
audio amplifier
TDA8927
17 SOLDERING
17.1
Introduction
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our
"Data Handbook IC26; Integrated Circuit Packages"
(document order number 9398 652 90011).
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mount components are mixed on
one printed-circuit board. Wave soldering can still be used
for certain surface mount ICs, but it is not suitable for fine
pitch SMDs. In these situations reflow soldering is
recommended.
17.2
Through-hole mount packages
17.2.1
S
OLDERING BY DIPPING OR BY SOLDER WAVE
The maximum permissible temperature of the solder is
260
C; solder at this temperature must not be in contact
with the joints for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T
stg(max)
). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
17.2.2
M
ANUAL SOLDERING
Apply the soldering iron (24 V or less) to the lead(s) of the
package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300
C it may remain in contact for up to
10 seconds. If the bit temperature is between
300 and 400
C, contact may be up to 5 seconds.
17.3
Surface mount packages
17.3.1
R
EFLOW SOLDERING
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Several methods exist for reflowing; for example,
convection or convection/infrared heating in a conveyor
type oven. Throughput times (preheating, soldering and
cooling) vary between 100 and 200 seconds depending
on heating method.
Typical reflow peak temperatures range from
215 to 250
C. The top-surface temperature of the
packages should preferable be kept below 220
C for
thick/large packages, and below 235
C for small/thin
packages.
17.3.2
W
AVE SOLDERING
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
To overcome these problems the double-wave soldering
method was specifically developed.
If wave soldering is used the following conditions must be
observed for optimal results:
Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
For packages with leads on two sides and a pitch (e):
larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
The footprint must incorporate solder thieves at the
downstream end.
For packages with leads on four sides, the footprint must
be placed at a 45
angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Typical dwell time is 4 seconds at 250
C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
17.3.3
M
ANUAL SOLDERING
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300
C. When using a dedicated tool, all other leads can
be soldered in one operation within 2 to 5 seconds
between 270 and 320
C.
2001 Dec 11
34
Philips Semiconductors
Objective specification
Power stage 2
80 W class-D
audio amplifier
TDA8927
17.4
Suitability of IC packages for wave, reflow and dipping soldering methods
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the
"Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods".
2. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.
3. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).
4. If wave soldering is considered, then the package must be placed at a 45
angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
5. Wave soldering is only suitable for LQFP, QFP and TQFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
6. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
MOUNTING
PACKAGE
SOLDERING METHOD
WAVE
REFLOW
(1)
DIPPING
Through-hole mount DBS, DIP, HDIP, SDIP, SIL
suitable
(2)
-
suitable
Surface mount
BGA, HBGA, LFBGA, SQFP, TFBGA
not suitable
suitable
-
HBCC, HLQFP, HSQFP, HSOP, HTQFP,
HTSSOP, HVQFN, SMS
not suitable
(3)
suitable
-
PLCC
(4)
, SO, SOJ
suitable
suitable
-
LQFP, QFP, TQFP
not recommended
(4)(5)
suitable
-
SSOP, TSSOP, VSO
not recommended
(6)
suitable
-
2001 Dec 11
35
Philips Semiconductors
Objective specification
Power stage 2
80 W class-D
audio amplifier
TDA8927
18 DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DATA SHEET STATUS
(1)
PRODUCT
STATUS
(2)
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
19 DEFINITIONS
Short-form specification
The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition
Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
20 DISCLAIMERS
Life support applications
These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
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these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Koninklijke Philips Electronics N.V. 2001
SCA73
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Printed in The Netherlands
753503/01/pp
36
Date of release:
2001 Dec 11
Document order number:
9397 750 08191