2003 Jun 26

Philips Semiconductors

Preliminary specification

Photodiode and amplifier IC for
CD and DVD applications

TZA1045

FEATURES

High frequency RF amplifiers
(typical bandwidth = 240 MHz)

Suitable for all CD (785 nm) and DVD (655 nm)
read/write applications

Four high bandwidth central outputs (A, B, C, and D),
four satellite outputs (E, F, G, and H) and one high
bandwidth differential output (RFP, RFN)

Internal current clamp and current fold back (power
reduction)

Versatile programmable gain switches (CD/DVD, H/L,
and R/W)

Single 5 V supply

Current outputs for optimum signal transport over flex
cable

Small outline package SSOP16T with good positional
tolerance.

APPLICATIONS

CD and DVD read/write applications.

GENERAL DESCRIPTION

The TZA1045 is a single optical pick-up IC for read/write
systems and is suitable for CD and DVD applications.

The device contains eight RF amplifiers for the central and
satellite diodes and one differential RF amplifier (RFP
and RFN) which handles the sum of the four A, B, C, and D
central diode signals.

Programming the gain is a very versatile way to optimize
interfacing between the TZA1045 and the pre-amplifier.
The gain can be programmed for CD or DVD media with
the gain switch CD/DVD.

The H/L switch can be used for CD-R or CD-RW discs.

Gain switch R/W is used to reduce the gain during writing.
During writing, the high peak signals for the central and
satellite segments are clamped internally and the output
currents of the A, B, C, D, E, F, G, and H segments are
reduced to almost zero (fold back) to minimize the power
consumption.

All outputs are current outputs that can supply a maximum
of 8 mA. In CD-R writing mode, the clipping level of the
output currents is between 5 and 8 mA.

The SSOP16T package has a low spread on the
z tolerance. The z tolerance is measured between the
diodes (chip surface) and the bottom of the leads. The
diodes have an offset of 54

m in the `y' direction with

respect to the leadframe centre and a tolerance of

in both `x' and `y' directions.

The diodes are placed under an angle of 45

° ±

with

respect to the leadframe of the module.

ORDERING INFORMATION

TYPE

NUMBER

PACKAGE

NAME

DESCRIPTION

VERSION

TZA1045TS

SSOP16T

plastic shrink small outline package/transparent;
16 leads (straight); body width 4.4 mm

SOT734-1

2003 Jun 26

Philips Semiconductors

Preliminary specification

Photodiode and amplifier IC for
CD and DVD applications

TZA1045

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Supplies

DD1

supply voltage front-end

4.5

5.0

5.5

DD2

supply voltage back-end

4.5

5.0

5.5

DD1

supply current front-end

dark conditions

writing DVD+R

12.8

17.4

21.3

writing CD-R

30.9

41.2

51.5

writing DVD+RW

12.9

17.2

21.5

writing CD-RW

11.4

15.2

19.0

reading DVD-ROM

31.9

42.5

53.1

reading CD-ROM

31.3

41.8

52.2

reading DVD+RW

31.7

42.2

52.8

reading CD-RW

30.9

41.2

51.5

DD2

supply current back-end

dark conditions

6.0

Temperature range

amb

ambient temperature

RF bandwidth

3dB(cen)

RF bandwidth central channels
A, B, C, and D

= 1 mA

writing DVD+R

135

170

205

MHz

writing CD-R

225

280

340

MHz

writing DVD+RW

240

300

360

MHz

writing CD-RW

115

145

175

MHz

reading DVD-ROM

135

170

205

MHz

reading CD-ROM

100

125

155

MHz

reading DVD+RW

135

170

205

MHz

reading CD-RW

105

130

MHz

3dB(dif)

RF bandwidth differential
channels RFP and RFN

= 1 mA

writing DVD+R

135

170

205

MHz

writing CD-R

235

290

350

MHz

writing DVD+RW

290

360

435

MHz

writing CD-RW

120

150

180

MHz

reading DVD-ROM

135

170

210

MHz

reading CD-ROM

120

145

MHz

reading DVD+RW

140

175

210

MHz

reading CD-RW

105

130

MHz

2003 Jun 26

Philips Semiconductors

Preliminary specification

Photodiode and amplifier IC for
CD and DVD applications

TZA1045

3dB(sat)

RF bandwidth satellite channels
E, F, G and H

= 1 mA

writing DVD+R

105

MHz

writing CD-R

110

MHz

writing DVD+RW

115

140

MHz

writing CD-RW

MHz

reading DVD-ROM

110

135

MHz

reading CD-ROM

MHz

reading DVD+RW

100

120

MHz

reading CD-RW

MHz

Settling time; note 1

st(max)

settling time

CD-R write mode (central and
satellite channels); I

set

> 300

accuracy set level within

5%; ratio

write to read peak level factor <50

< 22

CD-R write mode (differential
channels RFP and RFN);
I

set

> 70

A; accuracy set level within

5%; ratio write to read peak level

factor <50

< 22

CD-RW and DVD+RW write modes
(all channels); no clip; I

set

> 70

accuracy set level within

5%; ratio

write to read peak level factor 2;
I

< I

o(max)

< 10

DVD+R write mode (all channels);
no clip; I

set

> 100

A; accuracy set

level within

5%; ratio write to read

peak level factor 20; I

< I

o(max)

< 15

Phase and group delay variation

d(p)(dif)

phase delay variation differential
channels RFP and RFN

= 1 mA; f

= 13 to 130 MHz

reading DVD-ROM

0.15

reading CD-ROM

reading DVD+RW

0.25

reading CD-RW

1.3

d(g)(dif)

group delay variation differential
channels RFP and RFN

= 1.5 mA; f

= 2.6 to 130 MHz

reading DVD-ROM

0.4

reading CD-ROM

0.8

reading DVD+RW

0.6

reading CD-RW

1.2

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

2003 Jun 26

Philips Semiconductors

Preliminary specification

Photodiode and amplifier IC for
CD and DVD applications

TZA1045

Note

1. The settling time includes the recovery time.

Sensitivity

DVD+R

output current sensitivity for
DVD+R

writing;

= 655 nm

o(cen)

1.44

A/W

o(sat)

4.76

A/W

o(RFP)

, I

o(RFN)

0.54

A/W

CD-R

output current sensitivity for
CD-R

writing;

= 785 nm

o(cen)

43.2

A/W

o(sat)

173

A/W

o(RFP)

, I

o(RFN)

1.08

A/W

DVD+RW

output current sensitivity for
DVD+RW

writing;

= 655 nm

o(cen)

2.88

A/W

o(sat)

11.5

A/W

o(RFP)

, I

o(RFN)

1.08

A/W

reading;

= 655 nm

o(cen)

43.2

A/W

o(sat)

173

A/W

o(RFP)

, I

o(RFN)

16.2

A/W

CD-RW

output current sensitivity for
CD-RW

writing;

= 785 nm

o(cen)

5.67

A/W

o(sat)

23.0

A/W

o(RFP)

, I

o(RFN)

2.16

A/W

reading;

= 785 nm

o(cen)

173

A/W

o(sat)

691

A/W

o(RFP)

, I

o(RFN)

64.8

A/W

DVD-ROM

output current sensitivity for
DVD-ROM

reading;

= 655 nm

o(cen)

21.6

A/W

o(sat)

86.4

A/W

o(RFP)

, I

o(RFN)

8.1

A/W

CD-ROM

output current sensitivity for
CD-ROM

reading;

= 785 nm

o(cen)

86.4

A/W

o(sat)

346

A/W

o(RFP)

, I

o(RFN)

32.4

A/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

2003 Jun 26

Philips Semiconductors

Preliminary specification

Photodiode and amplifier IC for
CD and DVD applications

TZA1045

PINNING

SYMBOL

PIN

DESCRIPTION

central segment output A

central segment output D

DD2

supply voltage back-end

RFP

positive RF output

RFN

negative RF output

GND

ground

central segment output B

central segment output C

satellite segment output H

satellite segment output F

R/W

gain select switch for reading or
writing

H/L

gain select switch for high or low
reflective media

CD/DVD

gain select switch for CD or DVD

DD1

supply voltage front-end

satellite segment output G

satellite segment output E

handbook, halfpage

TZA1045TS

MGU614

VDD2

RFP

RFN

GND

VDD1

CD/DVD

H/L

R/W

Fig.2 Pin configuration.

MODE SELECTION

Table 1

Coder switching

PIN LEVEL

MODE

R/W

H/L

CD/DVD

LOW

writing DVD+R

LOW

HIGH

writing CD-R

LOW

HIGH

LOW

writing DVD+RW

LOW

HIGH

writing CD-RW

HIGH

LOW

reading DVD-ROM

HIGH

LOW

HIGH

reading CD-ROM

HIGH

LOW

reading DVD+RW

HIGH

reading CD-RW

2003 Jun 26

Philips Semiconductors

Preliminary specification

Photodiode and amplifier IC for
CD and DVD applications

TZA1045

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).

CHARACTERISTICS
V

DD1

= V

DD2

= 5 V; pin R/W = LOW; pin H/L = LOW; pin CD/DVD = HIGH; V

to V

= 2.5 V; V

RFP

= V

RFN

= 2.5 V;

measured in dark conditions; T

amb

= 25

C; unless otherwise specified.

SYMBOL

PARAMETER

MIN.

MAX.

UNIT

DD1

supply voltage front-end

0.3

+5.5

DD2

supply voltage back-end

0.3

+5.5

DD1

supply voltage difference with respect to V

DD2

0.3 V

DD2

+ 0.3 V

DD2

supply voltage difference with respect to V

DD1

0.3 V

DD1

+ 0.3 V

voltage at pins

A, B, C, D, E, F, G, H, RFP and RFN

0.3

DD2

+ 0.3 V

CD/DVD, H/L and R/W

0.3

DD1

+ 0.3 V

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Supplies

DD1

supply voltage front-end

note 1

4.5

5.0

5.5

DD2

supply voltage back-end

note 1

4.5

5.0

5.5

DD1

supply current front-end

dark conditions; note 2

writing DVD+R

12.8

17.4

21.3

writing CD-R

30.9

41.2

51.5

writing DVD+RW

12.9

17.2

21.5

writing CD-RW

11.4

15.2

19.0

reading DVD-ROM

31.9

42.5

53.1

reading CD-ROM

31.3

41.8

52.2

reading DVD+RW

31.7

42.2

52.8

reading CD-RW

30.9

41.2

51.5

DD2

supply current back-end

dark conditions;
T

amb

= 0 to 70

C; note 2

4.5

6.0

7.5

Temperature range

amb

ambient temperature

Central segment outputs; pins A, B, C, and D

3dB

channel A, B, C, and D
RF bandwidth

= 1 mA

writing DVD+R

135

170

205

MHz

writing CD-R

225

280

340

MHz

writing DVD+RW

240

300

360

MHz

writing CD-RW

115

145

175

MHz

reading DVD-ROM

135

170

205

MHz

reading CD-ROM

100

125

155

MHz

reading DVD+RW

135

170

205

MHz

reading CD-RW

105

130

MHz

2003 Jun 26

Philips Semiconductors

Preliminary specification

Photodiode and amplifier IC for
CD and DVD applications

TZA1045

sens

channel A, B, C and D
matching sensitivity

note 3

output voltage range

DD2

output current

excluding writing CD-R

6.5

o(offset)

output offset current

dark conditions;
T

amb

= 0 to 70

+15

o(clip)

output current clipping
level

CD-R writing; note 4

n(o)

spot noise output current

= 2.0 mA; f

= 50 MHz

reading DVD-ROM

480

pA/

reading CD-ROM

1660

pA/

reading DVD+RW

685

pA/

reading CD-RW

1900

pA/

Differential RF outputs; pins RFP and RFN

3dB

channel RFP and RFN
RF bandwidth

= 1 mA

writing DVD+R

135

170

205

MHz

writing CD-R

235

290

350

MHz

writing DVD+RW

290

360

435

MHz

writing CD-RW

120

150

180

MHz

reading DVD-ROM

135

170

210

MHz

reading CD-ROM

120

145

MHz

reading DVD+RW

140

175

210

MHz

reading CD-RW

105

130

MHz

d(p)

phase delay variation

= 1 mA; f

= 13 to 130 MHz

reading DVD-ROM

0.15

reading CD-ROM

reading DVD+RW

0.25

reading CD-RW

1.3

d(g)

group delay variation

= 1.5 mA;

= 2.6 to 130 MHz

reading DVD-ROM

0.4

reading CD-ROM

0.8

reading DVD+RW

0.6

reading CD-RW

1.2

output voltage range

DD2

output current

o(offset)

output offset current

dark conditions;
T

amb

= 0 to 70

pin RFP

pin RFN

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

2003 Jun 26

Philips Semiconductors

Preliminary specification

Photodiode and amplifier IC for
CD and DVD applications

TZA1045

n(o)

spot noise differential
output current

= 2 mA; f

= 50 MHz

reading DVD-ROM

360

pA/

reading CD-ROM

1250

pA/

reading DVD+RW

515

pA/

reading CD-RW

1400

pA/

Satellite segment outputs; pins E, F, G and H

3dB

channel E, F, G and H
RF bandwidth

= 1 mA

writing DVD+R

105

MHz

writing CD-R

110

MHz

writing DVD+RW

115

140

MHz

writing CD-RW

MHz

reading DVD-ROM

110

135

MHz

reading CD-ROM

MHz

reading DVD+RW

100

120

MHz

reading CD-RW

MHz

sens

channel E, F, G and H
matching sensitivity

note 5

output voltage range

DD2

output current

excluding writing CD-R

0.75

6.5

o(offset)

output offset current

dark conditions;
T

amb

= 0 to 70

o(clip)

current clipping level

CD-R writing; note 4

Settling time; note 6

st(max)

settling time

CD-R write mode (central and
satellite channels);
I

set

> 300

A; accuracy set

level within

5%; ratio write to

read peak level factor <50

< 22

CD-R write mode (differential
channels RFP and RFN);
I

set

> 70

A; accuracy set level

within

5%; ratio write to read

peak level factor <50

< 22

CD-RW and DVD+RW write
modes (all channels); no clip;
I

set

> 70

A; accuracy set level

within

5%; ratio write to read

peak level factor 2; I

< I

o(max)

< 10

DVD+R write mode (all
channels); no clip;
I

set

> 100

A; accuracy set

level within

5%; ratio write to

read peak level factor 20;
I

< I

o(max)

< 15

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

2003 Jun 26

Philips Semiconductors

Preliminary specification

Photodiode and amplifier IC for
CD and DVD applications

TZA1045

Common mode ripple, all channels

CMR

common mode ripple

= 2 mA (peak); f

up to

65 MHz; note 7

Control inputs; pins R/W, H/L and CD/DVD

i(pd)

pull-down input
impedance

230

LOW-level input voltage

0.2

HIGH-level input voltage

2.1

DD1

+ 0.2 V

t(G)

gain transition time

Sensitivity; note 8

DVD+R

output current sensitivity
for DVD+R

writing;

= 655 nm; note 9

o(cen)

1.44

A/W

o(sat)

4.76

A/W

o(RFP)

, I

o(RFN)

0.54

A/W

CD-R

output current sensitivity
for CD-R

writing;

= 785 nm; note 10

o(cen)

43.2

A/W

o(sat)

173

A/W

o(RFP)

, I

o(RFN)

1.08

A/W

DVD+RW

output current sensitivity
for DVD+RW

writing;

= 655 nm; note 9

o(cen)

2.88

A/W

o(sat)

11.5

A/W

o(RFP)

, I

o(RFN)

1.08

A/W

reading;

= 655 nm; note 11

o(cen)

43.2

A/W

o(sat)

173

A/W

o(RFP)

, I

o(RFN)

16.2

A/W

CD-RW

output current sensitivity
for CD-RW

writing;

= 785 nm; note 9

o(cen)

5.67

A/W

o(sat)

23.0

A/W

o(RFP)

, I

o(RFN)

2.16

A/W

reading;

= 785 nm; note 11

o(cen)

173

A/W

o(sat)

691

A/W

o(RFP)

, I

o(RFN)

64.8

A/W

DVD-ROM

output current sensitivity
for DVD-ROM

reading;

= 655 nm; note 11

o(cen)

21.6

A/W

o(sat)

86.4

A/W

o(RFP)

, I

o(RFN)

8.1

A/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

2003 Jun 26

Philips Semiconductors

Preliminary specification

Photodiode and amplifier IC for
CD and DVD applications

TZA1045

Notes

1. The supplies are connected internally by diodes. Differences between the supply voltages should not exceed 0.3 V.

2. Estimated average power consumption (typical value):

P = V

(1.4

o(av)

9 + I

DD1

+ I

DD2

) where I

o(av)

is the average output current.

Conditions: V

= V

DD1

= V

DD2

and I

< 8 mA.

3. Outputs A, B, C, and D: I

= 1 mA output current. Definition of matching:

where

ref

= V

ref1

= V

ref2

(see Fig.5) and I

(o)av

is the average output current.

4. The clipping function is active in the CD-R write mode for the segment outputs (not for outputs RFP and RFN) and

in the read mode for all outputs. In the read mode, the clipping level is increased to 8 mA.

5. Outputs E, F, G, and H: I

= 1.5 mA output current. Definition of matching:

where

ref

= V

ref1

= V

ref2

(see Fig.5) and I

(o)av

is the average output current.

sens

7% for reading CD-RW, CD-ROM, DVD+RW and writing CD-R mode.

6. The settling time includes the recovery time.

7. Definition:

8. The sensitivity of the TZA1045 is specified in A/W because it has current outputs. In the application diagram

(see Fig.5) the resistors of 150

convert the currents into voltages (V/W). The maximum absolute spread is

10%.

9. Writing without clipping.

10. Writing with clipping in CD-R mode for all segment outputs (not outputs RFP and RFN).

11. Reading with clipping active and switched to a level of typical 8 mA.

CD-ROM

output current sensitivity
for CD-ROM

reading;

= 785 nm; note 11

o(cen)

86.4

A/W

o(sat)

346

A/W

o(RFP)

, I

o(RFN)

32.4

A/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

o(max)

o(min)

(

)

1
4

---

------------------------------------------------------

ref

( )

o(max)

o(min)

(

)

1
4

---

------------------------------------------------------

ref

( )

20log

RFP

RFN

RFP

RFN

-----------------------------

2003 Jun 26

Philips Semiconductors

Preliminary specification

Photodiode and amplifier IC for
CD and DVD applications

TZA1045

PACKAGE OUTLINE

UNIT

(1)

(2)

(1)

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC

JEDEC

JEITA

1.3
1.1

0.37
0.17

0.25
0.15

0.32
0.20

0.25
0.13

5.3
5.1

2.1
1.9

(1)

4.5
4.3

0.65

6.7
6.5

0.48
0.18

0.13

0.2

0.1

DIMENSIONS (mm are the original dimensions)

Notes

1. Plastic or metal protrusions of 0.2 mm maximum per side are not included.

2. Sensor area

1.1

SOT734-1

01-11-09

detail X

2.5

5 mm

scale

SSOP16T: plastic shrink small outline package/transparent; 16 leads (straight); body width 4.4 mm SOT734-1

pin 1 index

2003 Jun 26

Philips Semiconductors

Preliminary specification

Photodiode and amplifier IC for
CD and DVD applications

TZA1045

SOLDERING

Introduction to soldering surface mount packages

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

"Data Handbook IC26; Integrated Circuit Packages"

(document order number 9398 652 90011).

There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering can still be used for
certain surface mount ICs, but it is not suitable for fine pitch
SMDs. In these situations reflow soldering is
recommended.

Reflow soldering

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Driven by legislation and environmental forces the
worldwide use of lead-free solder pastes is increasing.

Several methods exist for reflowing; for example,
convection or convection/infrared heating in a conveyor
type oven. Throughput times (preheating, soldering and
cooling) vary between 100 and 200 seconds depending
on heating method.

Typical reflow peak temperatures range from
215 to 270

C depending on solder paste material. The

top-surface temperature of the packages should
preferably be kept:

below 220

C (SnPb process) or below 245

C (Pb-free

process)

for all BGA and SSOP-T packages

for packages with a thickness

2.5 mm

for packages with a thickness < 2.5 mm and a

volume

350 mm

so called thick/large packages.

below 235

C (SnPb process) or below 260

C (Pb-free

process) for packages with a thickness < 2.5 mm and a
volume < 350 mm

so called small/thin packages.

Moisture sensitivity precautions, as indicated on packing,
must be respected at all times.

Wave soldering

Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.

To overcome these problems the double-wave soldering
method was specifically developed.

If wave soldering is used the following conditions must be
observed for optimal results:

Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.

For packages with leads on two sides and a pitch (e):

larger than or equal to 1.27 mm, the footprint

longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;

smaller than 1.27 mm, the footprint longitudinal axis

must be parallel to the transport direction of the
printed-circuit board.

The footprint must incorporate solder thieves at the
downstream end.

For packages with leads on four sides, the footprint must
be placed at a 45

angle to the transport direction of the

printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Typical dwell time of the leads in the wave ranges from
3 to 4 seconds at 250

C or 265

C, depending on solder

material applied, SnPb or Pb-free respectively.

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Manual soldering

Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300

When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320

2003 Jun 26

Philips Semiconductors

Preliminary specification

Photodiode and amplifier IC for
CD and DVD applications

TZA1045

Suitability of surface mount IC packages for wave and reflow soldering methods

Notes

1. For more detailed information on the BGA packages refer to the

"(LF)BGA Application Note" (AN01026); order a copy

from your Philips Semiconductors sales office.

2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum

temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the

"Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods".

3. These transparent plastic packages are extremely sensitive to reflow soldering conditions and must on no account

be processed through more than one soldering cycle or subjected to infrared reflow soldering with peak temperature
exceeding 217

C measured in the atmosphere of the reflow oven. The package body peak temperature

must be kept as low as possible.

4. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder

cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side,
the solder might be deposited on the heatsink surface.

5. If wave soldering is considered, then the package must be placed at a 45

angle to the solder wave direction.

The package footprint must incorporate solder thieves downstream and at the side corners.

6. Wave soldering is suitable for LQFP, TQFP and QFP packages with a pitch (e) larger than 0.8 mm; it is definitely not

suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

7. Wave soldering is suitable for SSOP, TSSOP, VSO and VSSOP packages with a pitch (e) equal to or larger than

0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

PACKAGE

(1)

SOLDERING METHOD

WAVE

REFLOW

(2)

BGA, LBGA, LFBGA, SQFP, SSOP-T

(3)

, TFBGA, VFBGA

not suitable

suitable

DHVQFN, HBCC, HBGA, HLQFP, HSQFP, HSOP, HTQFP,
HTSSOP, HVQFN, HVSON, SMS

not suitable

(4)

suitable

PLCC

(5)

, SO, SOJ

suitable

LQFP, QFP, TQFP

not recommended

(5)(6)

suitable

SSOP, TSSOP, VSO, VSSOP

not recommended

(7)

suitable

2003 Jun 26

Philips Semiconductors

Preliminary specification

Photodiode and amplifier IC for
CD and DVD applications

TZA1045

DATA SHEET STATUS

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

LEVEL

DATA SHEET

STATUS

(1)

PRODUCT

STATUS

(2)(3)

DEFINITION

Objective data

Development

This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

Preliminary data Qualification

This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

III

Product data

Production

This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).

DEFINITIONS

Short-form specification

The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition

Limiting values given are in

accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information

Applications that are

described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.

DISCLAIMERS

Life support applications

These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes

Philips Semiconductors

reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status `Production'), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

SCA75

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Philips Semiconductors a worldwide company

Contact information

For additional information please visit http://www.semiconductors.philips.com.

Fax: +31 40 27 24825

For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.

Printed in The Netherlands

753503/03/pp

Date of release:

2003 Jun 26

Document order number:

9397 750 11427

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: TZA1045

Document Outline

Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: TZA1045

Document Outline

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: TZA1045