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Электронный компонент: TZA3001BHL

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DATA SHEET
Preliminary specification
Supersedes data of 1997 Sep 08
File under Integrated Circuits, IC19
1999 Aug 24
INTEGRATED CIRCUITS
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser
drivers
1999 Aug 24
2
Philips Semiconductors
Preliminary specification
SDH/SONET STM4/OC12 laser drivers
TZA3001AHL; TZA3001BHL;
TZA3001U
FEATURES
622 Mbits/s data input, both Current-Mode Logic (CML)
and Positive Emitter Coupled Logic (PECL) compatible;
maximum 800 mV (p-p)
Adaptive laser output control with dual loop, stabilizing
optical ONE and ZERO levels
Optional external control of laser modulation and biasing
currents (non-adaptive)
Automatic laser shutdown
Few external components required
Rise and fall times of 120 ps (typical value)
Jitter <50 mUI (p-p)
RF output current sinking capability of 60 mA
Bias current sinking capability of 90 mA
Power dissipation of 430 mW (typical value)
Low cost LQFP32 plastic package
Single 5 V power supply.
TZA3001AHL
Laser alarm output for signalling extremely low and high
bias current conditions.
TZA3001BHL
Extra STM4 622 Mbits/s loop mode input; both CML and
PECL compatible.
TZA3001U
Bare die version with combined bias alarm and loop
mode functionality.
APPLICATIONS
SDH/SONET STM4/OC12 optical transmission systems
SDH/SONET STM4/OC12 optical laser modules.
GENERAL DESCRIPTION
The TZA3001AHL, TZA3001BHL and TZA3001U are fully
integrated laser drivers for STM4/OC12 (622 Mbits/s)
systems, incorporating the RF path between the data
multiplexer and the laser diode. Since the dual loop bias
and modulation control circuits are integrated on the IC,
the external component count is low. Only decoupling
capacitors and adjustment resistors are required.
The TZA3001AHL features an alarm function for signalling
extreme bias current conditions. The alarm low and high
threshold levels can be adjusted to suit the application
using only a resistor or a current Digital-to-Analog
Converter (DAC).
The TZA3001BHL is provided with an additional RF data
input to facilitate remote (loop mode) system testing.
The TZA3001U is a bare die version for use in compact
laser module designs. The die contains 40 pads and
features the combined functionality of the TZA3001AHL
and the TZA3001BHL.
ORDERING INFORMATION
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
TZA3001AHL
LQFP32
plastic low profile quad flat package; 32 leads; body 5
5
1.4 mm
SOT401-1
TZA3001BHL
TZA3001U
-
bare die; 2000
2000
380
m
-
1999 Aug 24
3
Philips Semiconductors
Preliminary specification
SDH/SONET STM4/OC12 laser drivers
TZA3001AHL; TZA3001BHL;
TZA3001U
BLOCK DIAGRAM
handbook, full pagewidth
LASER
CONTROL
BLOCK
BAND GAP
REFERENCE
data input
(differential)
TZA3001AHL
CURRENT
SWITCH
ALARMHI
TZERO
2
DIN
MONIN
28
18
ALARMLO
21
5
TONE
4
ALARM
26
22
ONE
23
ZERO
13
LA
DINQ
29
12
LAQ
15
BIAS
6
BGAP
MGK271
ALS
31
VCC(B)
10
GND
1, 3, 8, 9,
11, 14, 16, 17
24, 25, 32
VCC(G)
7
VCC(R)
19, 20
27, 30
4
11
Fig.1 Block diagram of TZA3001AHL.
handbook, full pagewidth
MGK270
LASER
CONTROL
BLOCK
BAND GAP
REFERENCE
TZA3001BHL
CURRENT
SWITCH
MUX
TZERO
ALS
2
DLOOP
MONIN
19
31
VCC(B)
10
GND
1, 3, 8, 9,
11, 14, 16, 17
24, 25, 32
VCC(G)
7
ENL
26
5
TONE
4
22
ONE
23
ZERO
13
LA
DLOOPQ
20
DIN
28
DINQ
29
12
LAQ
15
BIAS
6
BGAP
VCC(R)
18, 21
27, 30
4
11
Fig.2 Block diagram of TZA3001BHL.
1999 Aug 24
4
Philips Semiconductors
Preliminary specification
SDH/SONET STM4/OC12 laser drivers
TZA3001AHL; TZA3001BHL;
TZA3001U
PINNING
SYMBOL
PIN
PAD
DESCRIPTION
TZA3001AHL TZA3001BHL
TZA3001U
GND
1
1
1
ground
MONIN
2
2
2
monitor photodiode current input
GND
3
3
3
ground
IGM
-
-
4
not used; leave unbonded
TONE
4
4
5
connection for external capacitor used to set optical
ONE control loop time constant (optional)
TZERO
5
5
6
connection for external capacitor used to set optical
ZERO control loop time constant (optional)
BGAP
6
6
7
connection for external band gap decoupling capacitor
V
CC(G)
7
7
8
supply voltage (green domain)
V
CC(G)
-
-
9
supply voltage (green domain)
GND
8
8
10
ground
GND
9
9
11
ground
V
CC(B)
10
10
12
supply voltage (blue domain)
V
CC(B)
-
-
13
supply voltage (blue domain)
GND
11
11
14
ground
LAQ
12
12
15
laser modulation output inverted
LA
13
13
16
laser modulation output
GND
14
14
17
ground
BIAS
15
15
18
laser bias current output
GND
16
16
19
ground
GND
17
17
20
ground
GND
-
-
21
ground
ALARMHI
18
-
22
maximum bias current alarm reference level input
V
CC(R)
-
18
23
supply voltage (red domain)
V
CC(R)
19
-
-
supply voltage (red domain)
DLOOP
-
19
24
loop mode data input
V
CC(R)
20
-
-
supply voltage (red domain)
DLOOPQ
-
20
25
loop mode data input inverted
V
CC(R)
-
-
26
supply voltage (red domain)
ALARMLO
21
-
27
minimum bias current alarm reference level input
V
CC(R)
-
21
-
supply voltage (red domain)
ONE
22
22
28
optical ONE reference level input
ZERO
23
23
29
optical ZERO reference level input
GND
24
24
30
ground
GND
25
25
31
ground
ALARM
26
-
32
alarm output
ENL
-
26
33
loop mode enable input
V
CC(R)
27
27
34
supply voltage (red domain)
1999 Aug 24
5
Philips Semiconductors
Preliminary specification
SDH/SONET STM4/OC12 laser drivers
TZA3001AHL; TZA3001BHL;
TZA3001U
DIN
28
28
35
data input
DINQ
29
29
36
data input inverted
V
CC(R)
30
30
37
supply voltage (red domain)
ALS
31
31
38
automatic laser shutdown input
GND
32
32
39
ground
GND
-
-
40
ground
SYMBOL
PIN
PAD
DESCRIPTION
TZA3001AHL TZA3001BHL
TZA3001U
Fig.3 Pin configuration of TZA3001AHL.
handbook, full pagewidth
TZA3001AHL
MGK273
1
2
3
4
5
6
7
8
24
23
22
21
20
19
18
17
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
GND
MONIN
GND
TONE
TZERO
BGAP
VCC(G)
GND
GND
V
CC(B)
GND
LAQ
GND
BIAS
GND
LA
GND
ALARMHI
VCC(R)
ONE
ALARMLO
ZERO
VCC(R)
GND
GND
DIN
DINQ
V
CC(R)
ALS
GND
ALARM
V
CC(R)
1999 Aug 24
6
Philips Semiconductors
Preliminary specification
SDH/SONET STM4/OC12 laser drivers
TZA3001AHL; TZA3001BHL;
TZA3001U
Fig.4 Pin configuration of TZA3001BHL.
handbook, full pagewidth
TZA3001BHL
MGK272
1
2
3
4
5
6
7
8
24
23
22
21
20
19
18
17
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
GND
MONIN
GND
TONE
TZERO
BGAP
VCC(G)
GND
GND
V
CC(B)
GND
LAQ
GND
BIAS
GND
LA
GND
VCC(R)
DLOOPQ
ONE
VCC(R)
ZERO
DLOOP
GND
GND
DIN
DINQ
V
CC(R)
ALS
GND
ENL
V
CC(R)
FUNCTIONAL DESCRIPTION
The TZA3001AHL, TZA3001BHL and TZA3001U laser
drivers accept a 622 Mbits/s STM4 Non-Return to Zero
(NRZ) input data stream and generate an output signal
with sufficient current to drive a solid state Fabry Perot
(FP) or Distributed FeedBack (DFB) laser. They also
contain dual loop control circuitry for stabilizing the true
laser optical power levels representing logic 1 and logic 0.
The input buffers present a high impedance to the data
stream on the differential inputs (pins DIN and DINQ).
The input signal can be at CML level of approximately
200 mV (p-p) below the supply voltage, or at PECL level
up to 800 mV (p-p). The inputs can be configured to accept
CML signals by connecting external 50
pull-up resistors
between pins DIN and DINQ to V
CC(R)
. If PECL
compatibility is required, the usual Thevenin termination
can be applied.
For ECL signals (negative and referenced to ground) the
inputs should be AC-coupled to the signal source.
If AC-coupling is applied, a constant input signal (either
low of high) will bring the device in an undefined state.
To avoid this, it is recommended to apply a slight offset to
the input stage. The applied offset must be higher than the
specified value in Chapter "Characteristics", but much
lower than the applied input voltage swing.
The RF path is fully differential and contains a differential
preamplifier and a main amplifier. The main amplifier is
designed to handle large peak currents required at the
output laser driving stage and is insensitive to supply
voltage variations. The output signal from the main
amplifier drives a current switch which supplies a
guaranteed maximum modulation current of 60 mA at
pins LA and LAQ. Pin BIAS delivers a guaranteed
maximum DC bias current of up to 90 mA for adjusting the
optical laser output to a level above its light emitting
threshold.
Automatic laser control
A laser with a Monitor PhotoDiode (MPD) is required for
the laser control circuit (see Figs 6 and 7).
The MPD current is proportional to the laser emission and
is applied to pin MONIN. The MPD current range is from
100 to 1000
A (p-p). The input buffer is optimized to cope
with MPD capacitances up to 50 pF. To prevent the input
buffer breaking into oscillation with a low MPD
capacitance, it is required to increase the capacitance to
the minimum value specified in Chapter "Characteristics"
by connecting an extra capacitor between pin MONIN and
V
CC(G)
.
1999 Aug 24
7
Philips Semiconductors
Preliminary specification
SDH/SONET STM4/OC12 laser drivers
TZA3001AHL; TZA3001BHL;
TZA3001U
DC reference currents are applied to pins ZERO and ONE
to set the MPD reference levels for laser LOW and laser
HIGH. A resistor connected between pin ZERO and V
CC(R)
and a resistor connected between pin ONE and V
CC(R)
is
sufficient, but current DACs can also be used.
The voltages on pins ZERO and ONE are held constant at
a level of 1.5 V below V
CC(R)
. The reference current
applied to pin ZERO is multiplied by 4 and the reference
current flowing into pin ONE is multiplied internally by 16.
The reference current and the resistor for the optical ONE
regulation loop (modulation current control) can be
calculated using the following formulae:
(1)
(2)
The reference current and resistor for the optical ZERO
regulation loop (bias current control) can be calculated
using the following formulae:
(3)
(4)
In these formulae, I
MPD(ONE)
and I
MPD(ZERO)
represent the
monitor photodiode current during an optical ONE and an
optical ZERO, respectively.
Example: A laser is operating at optical output power
levels of 0.3 mW for laser HIGH and 0.03 mW for laser
LOW (extinction ratio of 10 dB). Suppose the
corresponding MPD currents for this type of laser are
260 and 30
A, respectively.
In this example the reference current is
and flows into pin ONE.
This current can be set using a current source or simply by
a resistor of the appropriate value connected between
pin ONE and V
CC(R)
. In this example the resistor would be
The reference current at pin ZERO in this example is
and can be set using a resistor
I
ONE
1
16
------
I
MPD (ONE)
=
A
[ ]
R
ONE
1.5
I
ONE
-----------
24
I
MPD (ONE)
-------------------------
=
=
[ ]
I
ZERO
1
4
---
I
MPD (ZERO)
=
A
[ ]
R
ZERO
1.5
I
ZERO
--------------
6
I
MPD (ZERO)
----------------------------
=
=
[ ]
I
ONE
1
16
------
260
16.25
A
=
=
R
ONE
1.5
16.25
----------------
92.3 k
=
=
I
ZERO
1
4
---
30
7.5
A
=
=
R
ZERO
1.5
7.5
----------
200 k
=
=
It should be noted that the MPD current is stabilized, rather
than the actual laser optical output power. Deviations
between optical output power and MPD current, known as
`tracking errors', cannot be corrected.
Designing the modulation and bias loop
The optical ONE and ZERO regulation loop time constants
are determined by on-chip capacitances. If the resulting
time constants are found to be too small in a specific
application, they can be increased by connecting external
capacitors to pins TZERO and TONE, respectively.
The optical ONE loop time constant and bandwidth can be
estimated using the following formulae:
(5)
(6)
The optical ZERO loop time constant and bandwidth can
be estimated using the following formulae:
(7)
(8)
The term
LASER
(dimensionless) in the above formulae is
the product of the two terms:
EO
is the electro-optical efficiency which accounts for
the steepness of the laser slope. It is the amount of the
extra optical output power in W/A of modulation current
optical output power.
R is the monitor photodiode responsivity. It is the
amount of the extra monitor photodiode current in A/W
optical output power.
ONE
40
10
12
C
TONE
+
(
)
80
10
3
LASER
----------------------
=
s
[ ]
B
ONE
1
2
ONE
--------------------------
=
Hz
[
]
B
ONE
LASER
2
40
10
12
C
TONE
+
(
)
80
10
3
-------------------------------------------------------------------------------------------------
=
ZERO
40
10
12
C
TZERO
+
(
)
50
10
3
LASER
----------------------
=
s
[ ]
B
ZERO
1
2
ZERO
----------------------------
=
Hz
[
]
B
ZERO
LASER
2
40
10
12
C
TZERO
+
(
)
50
10
3
----------------------------------------------------------------------------------------------------
=
1999 Aug 24
8
Philips Semiconductors
Preliminary specification
SDH/SONET STM4/OC12 laser drivers
TZA3001AHL; TZA3001BHL;
TZA3001U
Example: A laser with an MPD has the following
specifications: P
O
= 1 mW, I
th
= 25 mA,
EO
= 30 mW/A,
R = 500 mA/W. The term I
th
is the required threshold
current to switch-on the laser. If the laser operates just
above the threshold level, it may be assumed that
EO
around the optical ZERO level is 50% of
EO
around the
optical ONE level, due to the decreasing slope near the
threshold level.
In this example the resulting bandwidth for the optical ONE
regulation loop, without external capacitance, would be:
The resulting bandwidth for the optical ZERO regulation
loop, without external capacitance, would be:
It is not necessary to add additional capacitance with this
type of laser.
Data pattern and bit rate dependency of the control
loop
The constants in Equations (1) and (3) are valid, provided
a frequent presence of sufficiently long runs of `constant
zero' and `constant one'. The longest run of zeros and
ones, occurring typically within a single loop time period
(
ONE
and
ZERO
), must be at least approximately 6 ns
(e.g. as provided by the A1/A2 frame alignment bytes for
STM4/OC12). In practice, it can be witnessed that the
optical extinction ratio will increase if the bit rate is
increased. Therefore it is important to use the actual data
patterns and bit rate of the final application circuit for
adjusting the optical levels.
Monitoring the bias and modulation current
Although not recommended, the bias and modulation
currents generated by the laser driver can be monitored by
measuring the voltages on pins TZERO and TONE,
respectively. The relations between these voltages and
the corresponding currents are given as transconductance
values and are specified in Chapter "Characteristics".
The voltages on pins TZERO and TONE range from
1.4 to 3.4 V. The impedance connected at these pins
should have an extremely high value. It is mandatory to
use a CMOS buffer or an amplifier with an input
impedance higher than 100 G
and an extremely low
input leakage current (pA range).
B
ONE
30
10
3
500
10
3
2
40
10
12
80
10
3
---------------------------------------------------------------------
750 Hz
=
B
ZERO
0.5
30
10
3
500
10
3
2
40
10
12
50
10
3
-------------------------------------------------------------------------
600 Hz
=
Manual laser override
The automatic laser control function can be overridden by
connecting voltage sources to pins TZERO and TONE to
take direct control of, respectively, the bias current source
and the modulation current source. The control voltages
should be in the range from 1.4 to 3.4 V to sweep the
modulation current through the range from 1 to 60 mA and
the bias current through the range from 1 to 90 mA. These
current ranges are guaranteed. Depending on the
temperature and manufacturing process spread, current
values higher than the specified ranges can be achieved.
However, bias and modulation currents in excess of the
specified range are not supported and should be avoided.
Currents into or out pins TZERO and TONE in excess of
10
A must be avoided to prevent damage of the circuit.
Automatic laser shut-down and laser slow start
The laser modulation and bias currents can be rapidly
switched off when a HIGH-level (CMOS) is applied to
pin ALS. This function allows the circuit to be shut-down in
the event of an optical system malfunction. A 25 k
pull-down resistor defaults the input of pin ALS to the
non active state.
When a LOW-level is applied to pin ALS, the modulation
and bias current slowly increase to the desired values with
the typical time constants of
ONE
and
ZERO
, respectively.
This can be used as a laser slow start.
Bias alarm for TZA3001AHL
The bias current alarm circuit detects and flags whenever
the bias current is outside a predefined range. This feature
can detect excessive bias current due to laser aging and
laser malfunctioning. The maximum permitted bias current
should be applied to pin ALARMHI with an attenuation
ratio of 1500; the minimum to pin ALARMLO with an
attenuation ratio of 300.
Like the reference currents for the laser current control
loop, the alarm reference currents can be set using
external resistors connected between pins ALARMHI
or ALARMLO and V
CC(R)
. The resistor values can be
calculated using the following formulae:
(9)
(10)
R
ALARMHI
1.5
1500
I
BIAS(max)
----------------------------
=
[ ]
R
ALARMLO
1.5
300
I
BIAS(min)
------------------------
=
[ ]
1999 Aug 24
9
Philips Semiconductors
Preliminary specification
SDH/SONET STM4/OC12 laser drivers
TZA3001AHL; TZA3001BHL;
TZA3001U
Example: The following reference currents are required to
limit the bias current range between 6 and 90 mA:
and
The corresponding resistor values are:
and
If the alarm condition is true, the voltage on pin ALARM
goes to HIGH-level (CMOS). This signal could be used, for
example, to disable the laser driver by driving pin ALS
(a latch is needed in between to prevent oscillation).
Loop mode for TZA3001BHL
In the loop mode the total system application can be
tested. It allows for uninhibited optical transmission
through the fibre front-end (from the photodiode through
the transimpedance stage and the data and clock recovery
unit, to the laser driver and via the laser back to the fibre).
It should be noted that the optical receiver used in
conjunction with the TZA3001BHL must have a loop mode
output in order to complete the test loop.
A HIGH-level on pin ENL selects the loop mode. By default
pin ENL is pulled at LOW-level by a 25 k
pull-down
resistor.
Power supply connections
Three separate supply domains [labelled V
CC(B)
, V
CC(G)
and V
CC(R)
] are used to provide isolation between the
high-current outputs, the PECL or CML inputs, and the
monitor photodiode current input. The three domains
should be individually filtered before being connected to a
central V
CC
(see Figs 6 and 7). All supply pins need to
be connected. The supply levels should be equal and in
accordance with the values specified in
Chapter "Characteristics".
I
ALARMLO
6 mA
300
--------------
20
A
=
=
I
ALARMHI
90 mA
1500
-----------------
60
A
=
=
R
ALARMHI
1.5 V
1500
90 mA
---------------------------------
25 k
=
=
R
ALARMLO
1.5 V
300
6 mA
------------------------------
75 k
=
=
To maximize power supply isolation, the MPD cathode on
the laser should be connected to V
CC(G)
and the laser
diode anode to V
CC(B)
. It is recommended to provide the
laser anode with a separate decoupling capacitor C11.
The inverted laser driver modulation pin LAQ is generally
not used. To properly balance the output stage, an
equalization network Z1 with an impedance comparable to
the laser is connected between pin LAQ and V
CC(B)
.
All external components should be SMD, preferably of
size 0603 or smaller. The components must be mounted
as close to the IC as possible. It is specially recommended
to mount the following components very close to the IC:
Power supply decoupling capacitors C2, C4 and C6
Input matching network on pins DIN and DINQ
Capacitor C7 on pin MONIN
Output matching network Z1 at the unused output.
Grounding bare die
In addition to the separate V
CC
domains, the bare die
contains three corresponding ground domains. Isolation
between the GND domains is limited due to the finite
substrate conductance.
Mount the die on a, preferably large and highly conductive,
grounded die pad. All pads GND have to be bonded to
the die pad. The external ground is thus optimally
combined with the die ground, avoiding ground bouncing
problems.
Layout recommendations
Layout recommendations for the TZA3001AHL and
TZA3001BHL can be found in application note
"AN98090
Fiber optic transceiverboard STM1/4/8, OC3,12,24,
FC/GE".
1999 Aug 24
10
Philips Semiconductors
Preliminary specification
SDH/SONET STM4/OC12 laser drivers
TZA3001AHL; TZA3001BHL;
TZA3001U
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CC
supply voltage
-
0.5
+6
V
V
n
DC voltage on
pin MONIN
1.3
V
CC
+ 0.5
V
pins TONE and TZERO
-
0.5
V
CC
+ 0.5
V
pin BGAP
-
0.5
+3.2
V
pin BIAS
-
0.5
V
CC
+ 0.5
V
pins LA and LAQ
1.3
V
CC
+ 0.5
V
pin ALS
-
0.5
V
CC
+ 0.5
V
pins ONE and ZERO
-
0.5
V
CC
+ 0.5
V
pins DIN and DINQ
-
0.5
V
CC
+ 0.5
V
pin ALARM
TZA3001AHL
-
0.5
V
CC
+ 0.5
V
pins ALARMHI and ALARMLO
TZA3001AHL
-
0.5
V
CC
+ 0.5
V
pins DLOOP and DLOOPQ
TZA3001BHL
-
0.5
V
CC
+ 0.5
V
pin ENL
TZA3001BHL
-
0.5
V
CC
+ 0.5
V
I
n
DC current on
pin MONIN
-
0.5
+2.5
mA
pins TONE and TZERO
-
0.5
+0.5
mA
pin BGAP
-
2.0
+2.5
mA
pin BIAS
-
0.5
+200
mA
pins LA and LAQ
-
0.5
+100
mA
pin ALS
-
0.5
+0.5
mA
pins ONE and ZERO
-
0.5
+0.5
mA
pins DIN and DINQ
-
0.5
+0.5
mA
pin ALARM
TZA3001AHL
-
0.5
+10
mA
pins ALARMHI and ALARMLO
TZA3001AHL
-
0.5
+0.5
mA
pins DLOOP and DLOOPQ
TZA3001BHL
-
0.5
+0.5
mA
pin ENL
TZA3001BHL
-
0.5
+0.5
mA
T
amb
ambient temperature
-
40
+85
C
T
j
junction temperature
-
40
+125
C
T
stg
storage temperature
-
65
+150
C
SYMBOL
PARAMETER
VALUE
UNIT
R
th(j-s)
thermal resistance from junction to solder point
15
K/W
R
th(j-c)
thermal resistance from junction to case
23
K/W
1999 Aug 24
11
Philips Semiconductors
Preliminary specification
SDH/SONET STM4/OC12 laser drivers
TZA3001AHL; TZA3001BHL;
TZA3001U
CHARACTERISTICS
V
CC
= 5 V; T
amb
=
-
40 to +85
C; all voltages measured with respect to GND.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply
V
CC
supply voltage
4.75
5
5.25
V
I
CC
supply current
note 1
-
65
90
mA
P
tot
total power dissipation
note 2
-
430
810
mW
Data inputs: pins DIN and DINQ (and pins DLOOP and DLOOPQ on TZA3001BHL); see Fig.5
V
i(p-p)
input voltage
(peak-to-peak value)
differential
100
250
800
mV
V
IO
input offset voltage
-
25
-
+25
mV
V
I(min)
minimum input voltage
V
CC(R)
-
2
-
-
V
V
I(max)
maximum input voltage
-
-
V
CC(R)
+ 0.25 V
Z
i
input impedance
for low frequencies;
single-ended
8
10
12
k
CMOS inputs: pin ALS (and pin ENL on TZA3001BHL)
V
IL
LOW-level input voltage
-
-
1.5
V
V
IH
HIGH-level input voltage
3.5
-
-
V
R
pd(ALS)
internal pull-down resistance on
pin ALS
21
25.5
30
k
R
pd(ENL)
internal pull-down resistance on
pin ENL
15
25
35
k
CMOS output: pin ALARM (on TZA3001AHL)
V
OL
LOW-level output voltage
I
OH
=
-
200
A
0
-
0.2
V
V
OH
HIGH-level output voltage
I
OH
= 200
A
4.8
-
5
V
Monitor photodiode input: pin MONIN
V
I
DC input voltage
1.5
1.8
2.0
V
I
MPD
monitor photodiode current
laser optical `0'
24
-
260
A
laser optical `1'
96
-
1040
A
C
MPD
monitor photodiode capacitance
note 3
30
-
50
pF
Control loop reference currents: pins ONE and ZERO
I
ref(ONE)
reference current on pin ONE
note 4
6
-
65
A
V
ref(ONE)
reference voltage on pin ONE
referenced to V
CC(R)
-
1.55
-
1.5
-
1.45
V
I
ref(ZERO)
reference current on pin ZERO
note 4
6
-
65
A
V
ref(ZERO)
reference voltage on pin ZERO
referenced to V
CC(R)
-
1.55
-
1.5
-
1.45
V
Control loop time constants: pins TONE and TZERO
V
TONE
voltage on pin TONE
floating output
1.4
-
3.4
V
g
m(TONE)
transconductance of pin TONE
note 5
-
100
-
mA/V
V
TZERO
voltage on pin TZERO
floating output
1.4
-
3.4
V
g
m(TZERO)
transconductance of pin TZERO
note 6
-
160
-
mA/V
1999 Aug 24
12
Philips Semiconductors
Preliminary specification
SDH/SONET STM4/OC12 laser drivers
TZA3001AHL; TZA3001BHL;
TZA3001U
Notes
1. Remarks to the supply current:
a) The value for I
CC
does not include the modulation and bias currents through pins LA, LAQ and BIAS.
b) Typical value for I
CC
refers to, but does not include, I
MOD
= 30 mA and I
BIAS
= 45 mA.
c) The maximum value of I
CC
refers to, but does not include, I
MOD
= 60 mA and I
BIAS
= 90 mA.
2. Remarks to the power dissipation:
a) The value for P
tot
includes the modulation and bias currents through pins LA, LAQ and BIAS.
b) The typical value for P
tot
is the on-chip dissipation with I
MOD
= 30 mA and V
LA
= V
LAQ
= 2 V, I
BIAS
= 45 mA and
V
BIAS
= 1 V and typical process parameters.
c) The maximum value for P
tot
is the on-chip dissipation with I
MOD
= 60 mA and V
LA
= V
LAQ
= 2 V, I
BIAS
= 90 mA and
V
BIAS
= 1 V and worst case process parameters.
3. The minimum value of the capacitance on pin MONIN is required to prevent instability.
4. The reference currents can be set using a resistor connected between pins ONE or ZERO and V
CC
(see Section "Automatic laser control"). The corresponding ZERO level MPD current range is from 24 to 260
A.
The ONE level MPD current range is from 96 to 1040
A.
5. The specified transconductance is the ratio between the modulation current at pins LA or LAQ and the voltage at
pin TONE, under small signal conditions.
Laser modulation outputs: pins LA and LAQ
I
O
modulation output current
note 7
3
-
60
mA
I
O(off)
output current during laser
shutdown
-
-
10
A
V
O
output voltage
2
-
5
V
t
r
current rise time
note 8
-
120
300
ps
t
f
current fall time
note 8
-
120
300
ps
J
o(p-p)
intrinsic electrical output jitter
(peak-to-peak value)
note 9
-
-
50
mUI
Bias current output: pin BIAS
I
O
output current
note 10
2.5
-
90
mA
I
O(off)
output current during laser
shutdown
-
-
10
A
t
res(off)
response time after laser
shutdown
I
BIAS
= 90 mA;
note 11
-
-
1
s
V
O
output voltage
1
-
5
V
Alarm threshold inputs: pin ALARMHI and ALARMLO (on TZA3001AHL)
I
ref(ALARMLO)
threshold reference current on
pin ALARMLO
lower alarm; note 12
6
-
65
A
V
ref(ALARMLO)
optical reference voltage on
pin ALARMLO
referenced to V
CC(R)
-
1.55
-
1.5
-
1.45
V
I
ref(ALARMHI)
threshold reference current on
pin ALARMHI
higher alarm; note 12
6
-
65
A
V
ref(ALARMHI)
optical reference voltage on
pin ALARMHI
referenced to V
CC(R)
-
1.55
-
1.5
-
1.45
V
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
1999 Aug 24
13
Philips Semiconductors
Preliminary specification
SDH/SONET STM4/OC12 laser drivers
TZA3001AHL; TZA3001BHL;
TZA3001U
6. The specified transconductance is the ratio between the biasing current at pin BIAS and the voltage at pin TZERO,
under small signal conditions.
7. The values indicate the guaranteed interval, i.e. the lowest attainable output current is always lower than 3 mA and
the highest output current always higher than 60 mA.
8. The voltage rise and fall times can be larger, due to capacitive effects. Specifications are guaranteed by design and
characterization. Each device is tested at full operating speed to guarantee the RF functionality.
9. Measured in a frequency band from 250 kHz to 5 MHz, according to
"ITU-T Recommendation G.813".
The electrically generated (current) jitter is assumed to be less than 50% of the optical output jitter. The specification
is guaranteed by design.
10. The values indicate the guaranteed interval, i.e. the lowest output current always is less than 2.5 mA and the highest
output current is always more than 90 mA.
11. The response time is defined as the delay between the onset of the ramp on pin ALS (at 10% of the HIGH-level) and
the extinction of the bias current (at 10% of the original value).
12. The reference currents can be set by using a resistor between V
CC(R)
and pins ALARMLO or ALARMHI;
see Section "Bias alarm for TZA3001AHL" for detailed information. The corresponding range of low-bias thresholds
is between 1.8 and 19.5 mA. The high-bias threshold range is from 9 to 97.5 mA.
handbook, full pagewidth
MGK274
VIO
VI(max)
VI(min)
Vi(p-p)
VCC(R)
Fig.5 Logic level symbol definitions for data inputs.
1999 Aug 24
14
Philips Semiconductors
Preliminary specification
SDH/SONET STM4/OC12 laser drivers
TZA3001AHL; TZA3001BHL;
TZA3001U
APPLICATION INFORMATION
Fig.6 Application diagram showing the TZA3001AHL configured for 622 Mbits/s (STM4/OC12).
(1) C7 is required to meet the minimum capacitance value on pin MONIN (optional, see Section "Automatic laser control").
(2) C8 enhances modulation control loop time constant (optional).
(3) C9 enhances bias control loop time constant (optional).
(4) R1 and R2 are used for optical ZERO and ONE reference currents setting (see Section "Automatic laser control").
(5) R3 and R4 are used for minimum and maximum bias currents setting (see Section "Bias alarm for TZA3001AHL").
(6) Z1 is required for balancing the output stage (see Section "Power supply connections").
handbook, full pagewidth
MGK276
R5
18
TZA3001AHL
VCC(R)
TONE
MONIN
11
C8
(2)
TZERO
C9
(3)
BGAP
22 nF
C10
2
4
5
6
1, 3, 8, 9, 11,
14, 16, 17,
24, 25, 32
15
13
12
GND
BIAS
LA
LAQ
19, 20,
27, 30
VCC(B)
VCC(G)
ALS
31
7
10
DINQ
29
DIN
28
ALARM
R1
(4)
R2
(4)
R3
(5)
R4
(5)
26
23
22
data inputs
normal mode
(CML/PECL compatible)
21
18
ALARMHI
laser
C11
MPD
ALARMLO
Z1
(6)
C7
(1)
L1
4
ONE
ZERO
C1
1
F
C2
22 nF
L1
L2
L3
VCC
C3
1
F
C4
22 nF
C5
1
F
C6
22 nF
1999 Aug 24
15
Philips Semiconductors
Preliminary specification
SDH/SONET STM4/OC12 laser drivers
TZA3001AHL; TZA3001BHL;
TZA3001U
Fig.7 Application diagram showing the TZA3001BHL configured for 622 Mbits/s (STM4/OC12).
(1) C7 is required to meet the minimum capacitance value on pin MONIN (optional, see Section "Automatic laser control").
(2) C8 enhances modulation control loop time constant (optional).
(3) C9 enhances bias control loop time constant (optional).
(4) R1 and R2 are used for optical ZERO and ONE reference currents setting (see Section "Automatic laser control").
(5) Z1 is required for balancing the output stage (see Section "Power supply connections").
handbook, full pagewidth
MGK275
R3
18
TZA3001BHL
VCC(R)
TONE
MONIN
11
C8
(2)
TZERO
C9
(3)
BGAP
22 nF
C10
2
4
5
6
1, 3, 8, 9, 11,
14, 16, 17,
24, 25, 32
15
13
12
GND
BIAS
LA
LAQ
18, 21,
27, 30
VCC(B)
VCC(G)
ALS
31
7
10
DINQ
29
DIN
28
ENL
R1
(4)
R2
(4)
26
23
22
data inputs
normal mode
(CML/PECL compatible)
20
19
laser
C11
MPD
Z1
(5)
C7
(1)
L1
4
ONE
ZERO
C1
1
F
C2
22 nF
L1
L2
L3
VCC
C3
1
F
C4
22 nF
C5
1
F
C6
22 nF
loop mode inputs
(CML/PECL
compatible)
DLOOP
DLOOPQ
1999 Aug 24
16
Philips Semiconductors
Preliminary specification
SDH/SONET STM4/OC12 laser drivers
TZA3001AHL; TZA3001BHL;
TZA3001U
BONDING PADS
SYMBOL
PAD
COORDINATES
(1)
X
Y
GND
1
-
664
-
910
MONIN
2
-
524
-
910
GND
3
-
367
-
910
IGM
4
-
227
-
910
TONE
5
-
70
-
910
TZERO
6
+87
-
910
BGAP
7
+244
-
910
V
CC(G)
8
+384
-
910
V
CC(G)
9
+524
-
910
GND
10
+664
-
910
GND
11
+910
-
630
V
CC(B)
12
+910
-
490
V
CC(B)
13
+910
-
350
GND
14
+910
-
210
LAQ
15
+910
-
70
LA
16
+910
+70
GND
17
+910
+210
BIAS
18
+910
+350
GND
19
+910
+490
GND
20
+910
+630
GND
21
+681
+910
ALARMHI
22
+541
+910
Note
1. All x and y coordinates represent the position of the
centre of the pad in
m with respect to the centre of the
die (see Fig.8).
V
CC(R)
23
+384
+910
DLOOP
24
+227
+910
DLOOPQ
25
+87
+910
V
CC(R)
26
-
70
+910
ALARMLO
27
-
210
+910
ONE
28
-
367
+910
ZERO
29
-
524
+910
GND
30
-
681
+910
GND
31
-
910
+681
ALARM
32
-
910
+541
ENL
33
-
910
+384
V
CC(R)
34
-
910
+227
DIN
35
-
910
+70
DINQ
36
-
910
-
70
V
CC(R)
37
-
910
-
227
ALS
38
-
910
-
367
GND
39
-
910
-
551
GND
40
-
910
-
664
SYMBOL
PAD
COORDINATES
(1)
X
Y
1999 Aug 24
17
Philips Semiconductors
Preliminary specification
SDH/SONET STM4/OC12 laser drivers
TZA3001AHL; TZA3001BHL;
TZA3001U
Fig.8 Bonding pad locations of TZA3001U.
(1) Typical value.
handbook, full pagewidth
MGL192
y
2 mm
(1)
x
0
0
TZA3001U
1
2
3
4
5
10
9
8
7
6
30
29
28
27
26
21
2 mm
(1)
22
23
24
25
35
36
37
38
40
39
31
32
33
34
16
15
14
13
11
12
20
19
18
17
TONE
IGM
GND
MONIN
GND
GND
V
CC(G)
V
CC(G)
BGAP
TZERO
ALARMLO
ZERO
GND
ONE
LAQ
VCC(B)
VCC(B)
GND
ALS
GND
GND
LA
GND
BIAS
GND
GND
GND
ENL
ALARM
GND
VCC(R)
DINQ
DIN
VCC(R)
GND
ALARMHI
V
CC(R)
DLOOP
DLOOPQ
V
CC(R)
Table 1
Physical characteristics of bare die
PARAMETER
VALUE
Glass passivation
2.1
m PSG (PhosphoSilicate Glass) on top of 0.7
m silicon nitride
Bonding pad dimension
minimum dimension of exposed metallization is 90
90
m (pad size = 100
100
m)
Metallization
1.2
m AlCu (1% Cu)
Thickness
380
m nominal
Size
2.000
2.000 mm (4.000 mm
2
)
Backing
silicon; electrically connected to GND potential through substrate contacts
Attache temperature
<430
C; recommended die attache is glue
Attache time
<15 s
1999 Aug 24
18
Philips Semiconductors
Preliminary specification
SDH/SONET STM4/OC12 laser drivers
TZA3001AHL; TZA3001BHL;
TZA3001U
PACKAGE OUTLINE
0.2
UNIT
A
max.
A
1
A
2
A
3
b
p
c
E
(1)
e
H
E
L
L
p
Z
y
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
1.60
0.15
0.05
1.5
1.3
0.25
0.27
0.17
0.18
0.12
5.1
4.9
0.5
7.15
6.85
1.0
0.95
0.55
7
0
o
o
0.12
0.1
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
0.75
0.45
SOT401-1
95-12-19
97-08-04
D
(1)
(1)
(1)
5.1
4.9
H
D
7.15
6.85
E
Z
0.95
0.55
D
b
p
e
E
B
8
D
H
b
p
E
H
v
M
B
D
ZD
A
Z E
e
v
M
A
X
1
32
25
24
17
16
9
A
1
A
L
p
detail X
L
(A )
3
A
2
y
w
M
w
M
0
2.5
5 mm
scale
LQFP32: plastic low profile quad flat package; 32 leads; body 5 x 5 x 1.4 mm
SOT401-1
c
pin 1 index
1999 Aug 24
19
Philips Semiconductors
Preliminary specification
SDH/SONET STM4/OC12 laser drivers
TZA3001AHL; TZA3001BHL;
TZA3001U
SOLDERING
Introduction to soldering surface mount packages
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our
"Data Handbook IC26; Integrated Circuit Packages"
(document order number 9398 652 90011).
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering is not always suitable
for surface mount ICs, or for printed-circuit boards with
high population densities. In these situations reflow
soldering is often used.
Reflow soldering
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.
Typical reflow peak temperatures range from
215 to 250
C. The top-surface temperature of the
packages should preferable be kept below 230
C.
Wave soldering
Conventional single wave soldering is not recommended
for surface mount devices () or printed-circuit boards with
a high component density, as solder bridging and
non-wetting can present major problems.
To overcome these problems the double-wave soldering
method was specifically developed.
If wave soldering is used the following conditions must be
observed for optimal results:
Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
For packages with leads on two sides and a pitch (e):
larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
The footprint must incorporate solder thieves at the
downstream end.
For packages with leads on four sides, the footprint must
be placed at a 45
angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Typical dwell time is 4 seconds at 250
C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Manual soldering
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300
C.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320
C.
1999 Aug 24
20
Philips Semiconductors
Preliminary specification
SDH/SONET STM4/OC12 laser drivers
TZA3001AHL; TZA3001BHL;
TZA3001U
Suitability of surface mount IC packages for wave and reflow soldering methods
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the
"Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods".
2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).
3. If wave soldering is considered, then the package must be placed at a 45
angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
PACKAGE
SOLDERING METHOD
WAVE
REFLOW
(1)
BGA, SQFP
not suitable
suitable
HLQFP, HSQFP, HSOP, HTSSOP, SMS
not suitable
(2)
suitable
PLCC
(3)
, SO, SOJ
suitable
suitable
LQFP, QFP, TQFP
not recommended
(3)(4)
suitable
SSOP, TSSOP, VSO
not recommended
(5)
suitable
1999 Aug 24
21
Philips Semiconductors
Preliminary specification
SDH/SONET STM4/OC12 laser drivers
TZA3001AHL; TZA3001BHL;
TZA3001U
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
BARE DIE DISCLAIMER
All die are tested and are guaranteed to comply with all data sheet limits up to the point of wafer sawing for a period of
ninety (90) days from the date of Philips' delivery. If there are data sheet limits not guaranteed, these will be separately
indicated in the data sheet. There is no post waffle pack testing performed on individual die. Although the most modern
processes are utilized for wafer sawing and die pick and place into waffle pack carriers, Philips Semiconductors has no
control of third party procedures in the handling, packing or assembly of the die. Accordingly, Philips Semiconductors
assumes no liability for device functionality or performance of the die or systems after handling, packing or assembly of
the die. It is the responsibility of the customer to test and qualify their application in which the die is used.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V.
SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
1999
67
Philips Semiconductors a worldwide company
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Argentina: see South America
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,
Tel. +61 2 9704 8141, Fax. +61 2 9704 8139
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 68 9211, Fax. +359 2 68 9102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
Tel. +45 33 29 3333, Fax. +45 33 29 3905
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615 800, Fax. +358 9 6158 0920
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 4099 6161, Fax. +33 1 4099 6427
Germany: Hammerbrookstrae 69, D-20097 HAMBURG,
Tel. +49 40 2353 60, Fax. +49 40 2353 6300
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),
Tel. +39 039 203 6838, Fax +39 039 203 6800
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 62 5344, Fax.+381 11 63 5777
Printed in The Netherlands
465012/02/pp
24
Date of release:
1999 Aug 24
Document order number:
9397 750 05282