ChipFind - документация

Электронный компонент: TZA3019

Скачать:  PDF   ZIP
DATA SHEET
Preliminary specification
File under Integrated Circuits, IC19
2000 Apr 10
INTEGRATED CIRCUITS
TZA3019
2.5 Gbits/s dual
postamplifier with level
detectors and 2
2 switch
2000 Apr 10
2
Philips Semiconductors
Preliminary specification
2.5 Gbits/s dual postamplifier with level
detectors and 2
2 switch
TZA3019
FEATURES
Dual postamplifier
Single 3.3 V power supply
Wideband operation from 50 kHz to 2.5 GHz (typical
value)
Fully differential
Channels are delay matched
On-chip DC-offset compensations without external
capacitor
Interfacing with positive or negative supplied logic
Switching possibility between channels
Positive Emitter Coupled Logic (PECL) or Current-Mode
Logic (CML) compatible data outputs adjustable from
200 to 800 mV (p-p) single-ended
Power-down capability for unused outputs and detectors
Rise and fall times 80 ps (typical value)
Possibility to invert the output of each channel
separately
Input level-detection circuits for Received Signal
Strength Indicator (RSSI) or Loss Of Signal (LOS)
detection, programmable from 0.4 to 400 mV (p-p)
single-ended, with open-drain comparator output for
direct interfacing with positive or negative logic
Reference voltage for output level and LOS adjustment
Automatic strongest input signal switch possibility
(TZA3019 version B)
HTQFP32 or HBCC32 plastic package with exposed
pad.
APPLICATIONS
Postamplifier for Synchronous Digital Hierarchy and
Synchronous Optical Network (SDH/SONET)
transponder
SDH/SONET wavelength converter
Crosspoint or channel switch
PECL driver
Fibre channel arbitrated loop
Protection ring
Monitoring
Signal level detectors
Swing converter CML 200 mV (p-p) to
PECL 800 mV (p-p)
Port bypass circuit
2.5 GHz clock amplification.
GENERAL DESCRIPTION
The TZA3019 is a low gain postamplifier multiplexer with a
dual RSSI and/or LOS detector that is designed for use in
critical signal path control applications, such as
loop-through, redundant channel switching or Wavelength
Division Multiplexing (WDM). The signal path is
unregistered, so no clock is required for the data inputs.
The signal path is fully differential and delay matched. It is
capable of operating from 50 kHz to 2.5 GHz.
The TZA3019 HTQFP32 and HBCC32 packages can be
delivered in three versions:
TZA3019AHT and TZA3019AV with two RSSI signals
TZA3019BHT and TZA3019BV with one RSSI and one
LOS signal
TZA3019CHT and TZA3019CV with two LOS signals.
ORDERING INFORMATION
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
TZA3019AHT
HTQFP32
plastic, heatsink thin quad flat package; 32 leads; body 5
5
1 mm
SOT547-2
TZA3019BHT
HTQFP32
plastic, heatsink thin quad flat package; 32 leads; body 5
5
1 mm
SOT547-2
TZA3019CHT
HTQFP32
plastic, heatsink thin quad flat package; 32 leads; body 5
5
1 mm
SOT547-2
TZA3019AV
HBCC32
plastic, heatsink bottom chip carrier; 32 terminals; body 5
5
0.65 mm
SOT560-1
TZA3019BV
HBCC32
plastic, heatsink bottom chip carrier; 32 terminals; body 5
5
0.65 mm
SOT560-1
TZA3019CV
HBCC32
plastic, heatsink bottom chip carrier; 32 terminals; body 5
5
0.65 mm
SOT560-1
TZA3019U
-
bare die; 2.22
2.22
0.28 mm
-
2000 Apr 10
3
Philips Semiconductors
Preliminary specification
2.5 Gbits/s dual postamplifier with level
detectors and 2
2 switch
TZA3019
BLOCK DIAGRAM
handbook, full pagewidth
MGT028
TZA3019AHT
TZA3019AV
offset
level
A1A
23
A1B
OUT1
24
GND1B
27
RSSI1
25
VEE1B
21
GND1B
14
Vref
22
OUT1Q
offset
level
A2A
18
A2B
OUT2Q
17
GND2B
LEVEL1
12
GND1A
1
LOSTH1
10
VEE1A
32
GND1A
4
GND2A
8
IN2Q
7
IN2
6
GND2A
5
LOSTH2
11
VEE2A
9
S2
30
INV2
28
LEVEL2
13
TEST
15
INV1
29
S1
31
IN1
2
IN1Q
3
20
GND2B
16
VEE2B
26
RSSI2
19
OUT2
BAND GAP
REFERENCE
DFT
SWITCH
SWITCH
LOS
DETECTOR
LOS
DETECTOR
1
1
Fig.1 Block diagram (TZA3019AHT and TZA3019AV).
2000 Apr 10
4
Philips Semiconductors
Preliminary specification
2.5 Gbits/s dual postamplifier with level
detectors and 2
2 switch
TZA3019
handbook, full pagewidth
MGT027
TZA3019BHT
TZA3019BV
offset
level
A1A
23
A1B
OUT1
24
GND1B
27
LOS1
25
VEE1B
21
GND1B
14
Vref
22
OUT1Q
offset
level
A2A
18
A2B
OUT2Q
17
GND2B
LEVEL1
12
GND1A
1
LOSTH1
10
VEE1A
32
GND1A
4
GND2A
8
IN2Q
7
IN2
6
GND2A
5
LOSTH2
11
VEE2A
9
S2
30
INV2
28
LEVEL2
13
TEST
15
INV1
29
S1
31
IN1
2
IN1Q
3
20
GND2B
16
VEE2B
26
RSSI2
19
OUT2
BAND GAP
REFERENCE
DFT
SWITCH
SWITCH
5 k
LOS
DETECTOR
LOS
DETECTOR
1
Fig.2 Block diagram (TZA3019BHT and TZA3019AV).
2000 Apr 10
5
Philips Semiconductors
Preliminary specification
2.5 Gbits/s dual postamplifier with level
detectors and 2
2 switch
TZA3019
handbook, full pagewidth
MGS553
5 k
TZA3019CHT
TZA3019CV
offset
level
A1A
23
A1B
OUT1
24
GND1B
27
LOS1
25
VEE1B
21
GND1B
14
Vref
22
OUT1Q
offset
level
A2A
18
A2B
OUT2Q
17
GND2B
LEVEL1
12
GND1A
1
LOSTH1
10
VEE1A
32
GND1A
4
GND2A
8
IN2Q
7
IN2
6
GND2A
5
LOSTH2
11
VEE2A
9
S2
30
INV2
28
LEVEL2
13
TEST
15
INV1
29
S1
31
IN1
2
IN1Q
3
20
GND2B
16
VEE2B
26
LOS2
19
OUT2
BAND GAP
REFERENCE
DFT
SWITCH
SWITCH
5 k
LOS
DETECTOR
LOS
DETECTOR
Fig.3 Block diagram (TZA3019CHT and TZA3019CV).
2000 Apr 10
6
Philips Semiconductors
Preliminary specification
2.5 Gbits/s dual postamplifier with level
detectors and 2
2 switch
TZA3019
PINNING
SYMBOL
PIN
PAD
TYPE
(2)
DESCRIPTION
TZA3019xHT/xV
(1)
A
B
C
GND1A
1
1
1
1
S
ground for input 1 and LOS1 circuits
IN1
2
2
2
2
I
differential circuit 1 input; complimentary to pin IN1Q; DC bias level
is set internally at approximately
-
0.33 V
IN1Q
3
3
3
3
I
differential circuit 1 input; complimentary to pin IN1; DC bias level is
set internally at approximately
-
0.33 V
GND1A
4
4
4
4
S
ground for input 1 and LOS1 circuits
n.c
-
-
-
5
-
not connected
n.c
-
-
-
6
-
not connected
GND2A
5
5
5
7
S
ground for input 2 and LOS2 circuits
IN2
6
6
6
8
I
differential circuit 2 input; complimentary to pin IN2Q; DC bias level
is set internally at approximately
-
0.33 V
IN2Q
7
7
7
9
I
differential circuit 2 input; complimentary to pin IN2; DC bias level is
set internally at approximately
-
0.33 V
GND2A
8
8
8
10
S
ground for input 2 and LOS2 circuits
V
EE2A
9
9
9
11
S
negative supply voltage for input 2 and LOS2 circuits
LOSTH1
10
10
10
12
I
Input for level detector programming of input 1 circuit; threshold
level is set by connecting external resistors between pins
GND1A and V
ref
. When forced to V
EE2A
or not connected, the
LOS1 circuit will be switched off.
LOSTH2
11
11
11
13
I
Input for level detector programming of input 2 circuit; threshold
level is set by connecting external resistors between pins
GND2A and V
ref
. When forced to V
EE2A
or not connected, the
LOS2 circuit will be switched off.
n.c
-
-
-
14
-
not connected
LEVEL1
12
12
12
15
I
Input for programming output level of output 1 circuit; output level is
set by connecting external resistors between pins GND1A and V
ref
.
When forced to GND1A or not connected, pins OUT1 and OUT1Q
will be switched off.
LEVEL2
13
13
13
16
I
Input for programming output level of output 2 circuit; output level is
set by connecting external resistors between pins GND2A and V
ref
.
When forced to GND2A or not connected, pins OUT2 and OUT2Q
will be switched off.
V
ref
14
14
14
17
O
reference voltage for level circuit and LOS threshold programming;
typical value is
-
1.6 V; no external capacitor allowed
n.c
-
-
-
18
-
TEST
15
15
15
19
I
for test purposes only; to be left open-circuit in the application
V
EE2B
16
16
16
20
S
negative supply voltage for output 2 circuit
GND2B
17
17
17
21
S
ground for output 2 circuit
OUT2Q
18
18
18
22
O
PECL or CML compatible differential circuit 2 output;
complimentary to pin OUT2
2000 Apr 10
7
Philips Semiconductors
Preliminary specification
2.5 Gbits/s dual postamplifier with level
detectors and 2
2 switch
TZA3019
Notes
1. The `x' in TZA3019xHT/xV represents versions A, B and C.
2. Pin type abbreviations: O = output, I = input, S = power supply, TTL = logic input and O-DRN = open-drain output.
OUT2
19
19
19
23
O
PECL or CML compatible differential circuit 2 output;
complimentary to pin OUT2Q
GND2B
20
20
20
24
S
ground for output 2 circuit
n.c
-
-
-
25
-
not connected
n.c
-
-
-
26
-
not connected
GND1B
21
21
21
27
S
ground for output 1 circuit
OUT1Q
22
22
22
28
O
PECL or CML compatible differential circuit 1 output;
complimentary to pin OUT1
OUT1
23
23
23
29
O
PECL or CML compatible differential circuit 1 output;
complimentary to pin OUT1Q
GND1B
24
24
24
30
S
ground for output 1 circuit
V
EE1B
25
25
25
31
S
negative supply voltage for output 1 circuit
RSSI2
26
26
-
32
O
output of received signal strength indicator of detector
LOS2
-
-
26
33
O-DRN output loss of signal detector 2; detection of input 2 signal; direct
drive of positive or negative supplied logic via internal 5 k
resistor
RSSI1
27
-
-
34
O
output of received signal strength indicator of detector
LOS1
-
27
27
35
O-DRN output loss of signal detector 2; detection of input 2 signal; direct
drive of positive or negative supplied logic via internal 5 k
resistor
INV2
28
28
28
36
TTL
input to invert the signal of pins OUT2 and OUT2Q; directly positive
(inverted) or negative supplied logic driven
INV1
29
29
29
37
TTL
input to invert the signal of pins OUT1 and OUT1Q; directly of
positive (inverted) or negative supplied logic driven
S2
30
30
30
38
TTL
input selector output 2 circuit; directly positive (inverted) or negative
supplied logic driven
S1
31
31
31
39
TTL
input selector output 1 circuit; directly positive (inverted) or negative
supplied logic driven
V
EE1A
32
32
32
40
S
negative supply voltage for input 1 and LOS1 circuits
V
EEP
pad
pad
pad
-
S
negative supply voltage pad (exposed die pad)
SYMBOL
PIN
PAD
TYPE
(2)
DESCRIPTION
TZA3019xHT/xV
(1)
A
B
C
2000 Apr 10
8
Philips Semiconductors
Preliminary specification
2.5 Gbits/s dual postamplifier with level
detectors and 2
2 switch
TZA3019
Fig.4 Pin configuration HTQFP32.
handbook, full pagewidth
TZA3019xHT
MGS554
1
2
3
4
5
6
7
8
24
23
22
21
20
19
18
17
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
GND1A
exposed pad
GND2A
GND2A
VEEP
IN2Q
IN1Q
IN2
V
EE2A
LOSTH2
LEVEL2
LOSTH1
TEST
RSSI2/LOS2
INV2
V
EE1A
INV1
OUT1Q
GND2B
RSSI1/LOS1
OUT1
GND2B
OUT2Q
GND1B
S1
S2
V
EE2B
V
EE1B
GND1B
OUT2
V
ref
LEVEL1
GND1A
IN1
handbook, full pagewidth
MGT029
1
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
GND1A
GND2A
GND2A
IN2Q
IN1Q
IN2
V
EE2A
LOSTH2
LEVEL2
LOSTH1
TEST
RSSI2/LOS2
INV2
V
EE1A
INV1
OUT1Q
GND2B
RSSI1/LOS1
OUT1
GND2B
OUT2Q
GND1B
S1
S2
V
EE2B
V
EE1B
GND1B
OUT2
V
ref
LEVEL1
GND1A
IN1
TZA3019xV
exposed pad
VEEP
Fig.5 Pin configuration HBCC32.
2000 Apr 10
9
Philips Semiconductors
Preliminary specification
2.5 Gbits/s dual postamplifier with level
detectors and 2
2 switch
TZA3019
FUNCTIONAL DESCRIPTION
The TZA3019 is a dual postamplifier with multiplexer and
loss of signal detection see Figs 1, 2 and 3. The RF path
starts with the multiplexer, which connects an amplifier to
one of the two inputs. It is possible to invert the output for
easy layout of the Printed-Circuit Board (PCB). The signal
is amplified to a certain level. To guarantee this level with
minimum distortion over the temperature range and level
range, an active control part is added. The offset
compensation circuit following the inverter minimizes the
offset.
The Received Signal Strength Indicator (RSSI) or the Loss
Of Signal (LOS) detection uses a 7-stage `successive
detection' circuit. It provides a logarithmic output. The LOS
is followed by a comparator with a programmable
threshold. The input signal level-detection is implemented
to check if the input signal voltage is above the user
programmed level. This can insure that data will only be
transmitted when the input signal-to-noise ratio is sufficient
for low bit error rate system operation. A second
offset compensation circuit minimizes the offset of the
logarithmic amplifier.
RF input circuit
The input circuit contains internal 50
resistors
decoupled to ground via an internal common mode 12 pF
capacitor (see Fig.6).
The input pins are DC-biased at approximately
-
0.33 V by
an internal reference generator. The TZA3019 can be
DC-coupled, but AC-coupling is preferred. In case of
DC-coupling, the driving source must operate within the
allowable input range (
-
1.0 to +0.3 V). A DC-offset voltage
of more than a few millivolts should be avoided, since the
internal DC-offset compensation circuit has a limited
correction range. When AC-coupling is used, if no
DC-compatibility is required, the values of the coupling
capacitors must be large enough to pass the lowest input
frequency of interest. Capacitor tolerance and resistor
variation must be included for an accurate calculation.
Do not use signal frequencies around the low cut-off
circuit frequencies (f
-
3dB(l)
= 50 kHz for the postamplifiers
and f
-
3dB(l)
= 1 MHz for the LOS circuits).
RF output circuit
Matching the main amplifier outputs (see Fig.7) is not
mandatory. In most applications, the transmission line
receiving end will be properly matched, while very little
reflections occur.
Matching the transmitting end to absorb reflections is only
recommended for very sensitive applications.
In such cases, pull-up resistors of 100
should be
connected as close as possible to the IC from
pins OUT1 and OUT1Q, and pins OUT2 and OUT2Q to
V
EE1B
and V
EE2B
respectively. These matching resistors
are not needed in most applications.
Postamplifier level adjustment
The postamplifier boosts the signal up to PECL levels. The
output can be either CML- or PECL-level compatible,
adjusted by means of the voltage on pins LEVEL1
and LEVEL2. The DC voltages of pins OUT1 and OUT1Q,
and pins OUT2 and OUT2Q match with the DC-levels
on pins LEVEL1 and LEVEL2, respectively. Due to the
receiving end 50
load resistance, it means that at the
same level of V
o(p-p)
, V
LEVEL1
and V
LEVEL2
with
AC-coupling are not equal to V
LEVEL1
and V
LEVEL2
with
DC-coupling (see Figs 7 and 8).
The postamplifier is in power-down state when pin
LEVEL1 or LEVEL2 is connected to ground or not
connected (see Fig.8).
Postamplifier DC offset cancellation loop
Offset control loops connected between the inputs of the
buffers A1A and A2A and the outputs of the amplifiers A1B
and A2B (see Figs 1, 2 and 3) will keep the input of both
buffers at their toggle point during the absence of an input
signal. The active offset compensation circuit is integrated,
so no external capacitor is required. The loop time
constant determines the lower cut-off frequency of the
amplifier chain. The cut-off frequency of the offset
compensations is fixed internally at approximately 5 kHz.
handbook, halfpage
MGS555
420
50
50
12 pF
GND1A,
GND2A
IN1, IN2
IN1Q, IN2Q
VEE1A,
VEE2A
Fig.6 RF input circuit.
2000 Apr 10
10
Philips Semiconductors
Preliminary specification
2.5 Gbits/s dual postamplifier with level
detectors and 2
2 switch
TZA3019
handbook, full pagewidth
REG
50
Vo
50
100
R1
R2
Vlevel
Vref
OUT1,
OUT2
LEVEL1,
LEVEL2
GND1B,
GND2B
OUT1Q,
OUT2Q
100
MGS556
GND1A,
GND2A
0
Vo
(V)
Vlevel
Vo(se)(p-p)
handbook, full pagewidth
MGL811
REG
50
Vo
50
100
R1
R2
Vlevel
Vref
OUT1,
OUT2
LEVEL1,
LEVEL2
GND1B,
GND2B
GND1A,
GND2A
OUT1Q,
OUT2Q
100
0
Vo
(V)
Vlevel
Vo(se)(p-p)
Fig.7 RF output configurations.
a. DC-coupling.
b. AC-coupling.
V
level
= 0.5
V
o(se)(p-p)
.
.
Level detector in power-down mode: V
LEVEL1
or V
LEVEL2
= V
GND
.
V
level
V
ref
R1
R1
R2
+
----------------------
=
V
level
= 1.5
V
o(se)(p-p)
.
.
Level detector in power-down mode: V
LEVEL1
or V
LEVEL2
= V
GND
.
V
level
V
ref
R1
R1
R2
+
----------------------
=
2000 Apr 10
11
Philips Semiconductors
Preliminary specification
2.5 Gbits/s dual postamplifier with level
detectors and 2
2 switch
TZA3019
handbook, full pagewidth
0
100
1000
0
200
MGS557
400
600
800
20
40
60
80
Vlevel (% of Vref)
Vo(se)(p-p)
(mV)
DC-coupled
AC-coupled
Fig.8 Output signal as a function of V
level
.
TTL logic input of selector and inverter
The logic levels are differently defined for positive or
negative logic (see Fig.9). It should be noted that positive
logic levels are inverted if a negative supply voltage is
used.
Outputs as a function of switch input pins S1, S2,
INV1 and INV2
See Tables 1, 2, 3 and 4.
The default values for the switch input pins S1, S2, INV1
and INV2 if not connected, is zero.
Table 1
OUT1 and OUT1Q as function of input S1
Table 2
OUT2 and OUT2Q as function of input S2
Table 3
OUT1 and OUT1Q as function of INV1
Table 4
OUT2 and OUT2Q as function of INV2
S1
OUT1
OUT1Q
0
IN1
IN1Q
1
IN2
IN2Q
S2
OUT2
OUT2Q
0
IN2
IN2Q
1
IN1
IN1Q
INV1
OUT1
OUT1Q
0
IN1 or IN2
IN1Q or IN2Q
1
IN1Q or IN2Q
IN1 or IN2
INV2
OUT2
OUT2Q
0
IN1 or IN2
IN1Q or IN2Q
1
IN1Q or IN2Q
IN1 or IN2
2000 Apr 10
12
Philips Semiconductors
Preliminary specification
2.5 Gbits/s dual postamplifier with level
detectors and 2
2 switch
TZA3019
handbook, full pagewidth
1
logic
level
0
-
4
-
3
-
2
-
1
0
VEE
GND
(1)
VI (V)
+
1
+
2
+
3
1.4 V
T TL
0.8 V
2.0 V
1.4 V
0.8 V
2.0 V
MGS558
handbook, full pagewidth
1
logic
level
0
-
4
-
3
-
2
-
1
0
(1)
VI (V)
+
1
+
2
+
3
1.4 V
T TL
0.8 V
2.0 V
1.4 V
0.8 V
2.0 V
MGS559
VEE
VCC
GND
handbook, full pagewidth
1
logic
level
0
-
1
0
(1)
+
1
+
2
+
3
+
4
VI (V)
+
5
+
6
1.4 V
T TL
0.8 V
2.0 V
1.4 V
0.8 V
2.0 V
MGS560
VCC
GND
Fig.9 Logic levels on pins S1, S2, INV1 and INV2 as a function of the input voltages.
a. Negative circuit supply voltage V
EE
and negative logic supply voltage V
EE
.
b. Negative circuit supply voltage V
EE
and positive logic supply voltage V
CC
.
c. Positive circuit supply voltage V
CC
and positive logic supply voltage V
CC
.
(1) Level not defined.
2000 Apr 10
13
Philips Semiconductors
Preliminary specification
2.5 Gbits/s dual postamplifier with level
detectors and 2
2 switch
TZA3019
RSSI and LOS detection
The TZA3019 allows AC-signal level detection. This can
prevent the outputs from reacting to noise during the
absence of a valid input signal, and can insure that data
only will be transmitted when the signal-to-noise ratio of
the input signal is sufficient to insure low bit error rate
system operation.
The RSSI detection circuit uses seven limiting amplifiers in
a `successive detection' topology to closely approximate
logarithmic response over a total range of 70 dB. The
detectors provide full-wave rectification of the AC signals
presented at each previous amplifier stage. Their outputs
are current drivers. Each cell incorporates a low-pass filter,
being the first step in recovering the average value of the
demodulated signal of the input frequency. The summed
detector output currents are converted to a voltage by an
internal load resistor. This voltage is buffered and
available in the A and B versions of the TZA3019. When
V
RSSI
is used V
LOSTH
must be connected to GND to
prevent the LOS comparator from switching to the standby
mode. The LOS comparator detects an input signal above
a fixed threshold, resulting in a LOW-level at the LOS
circuit output.The threshold level is determined by the
voltage on pins LOSTH1 or LOSTH2 (see Fig.10). A filter
with a time constant of 1
s nominal is included to prevent
noise spikes from triggering the level detector.
The comparator (with internal 3 dB hysteresis) drives an
open-drain circuit with an internal resistor (5 k
) for direct
interfacing to positive or negative logic (see Fig.11). Only
available in the B and C versions of the TZA3019.
The response is independent of the sign of the input signal
because of the particular way the circuit has been built.
This is part of the demodulating nature of the detector,
which results in an alternating input voltage being
transformed to a rectified and filtered quasi DC-output
signal. For the TZA3019 the logarithmic voltage slope is
= 1/13 dB/mV and is essentially temperature and supply
independent through four feedback loops in the reference
circuit. The internal LOS detector output voltage is based
on V
ref
. The demodulator characteristic depends on the
waveform and the response depends roughly on the input
signal RMS value. This influences high frequencies, a
square wave input of 2.4 GHz (LOS circuit bandwidth
of 2.4 GHz) offsets the intercept voltage by 20%. V
LOSTH
can be calculated using the following formulae:
(1)
where S = sensitivity.
Example: a 200 mV (p-p) single-ended 1.2 GB/s PRBS
signal has an RSSI from 1003 mV.
A full understanding of the offset control loop is useful. The
primary purpose of the loop is to extend the lower end of
the dynamic range in any case where the offset voltage of
the first stage might be high enough to cause later stages
to prematurely enter limiting, caused by the high DC-gain
of the amplifier system. The offset is automatically and
continuously compensated via a feedback path from the
last stage. An offset at the output of the logarithmic
converter is equivalent to a change of amplitude at the
input. Consequently, with DC-coupling, signal absence,
either LOW-level or HIGH-level is detected as a full signal,
only signals with an average value equal to zero give zero
output.
Version B can be used for an auto function, which switches
the strongest input signal to output 1 and the weakest to
output 2. To achieve this output V
RSSI2
must be used as
the reference voltage for input V
LOSTH
. Then the output
LOS1 can switch S1 and S2.
V
LOSTH
V
RSSI
S
20log
Vi 18
V
/
(
)
=
=
handbook, halfpage
70
30
LOS1,
LOS2
LOW-level
LOS1,
LOS2
HIGH-level
50
-
0.8
-
0.64
-
0.48
-
0.32
-
0.96
-
1.12
60
20
40
10
3
10
2
10
1
10
-
1
MGS564
VLOSTH1, VLOSTH2 (% of Vref)
VRSSI1, VRSSI2 (V)
Vi(se)(p-p)
(mV)
(1)
(3)
(2)
10
-
0.16
Fig.10 Loss of signal assert level.
(1) PRBS pattern input signal with a frequency <1 GHz.
(2) Linearity error typically 0.5 dB.
(3)
= 1/12.5 dB/mV.
2000 Apr 10
14
Philips Semiconductors
Preliminary specification
2.5 Gbits/s dual postamplifier with level
detectors and 2
2 switch
TZA3019
handbook, halfpage
MGS561
VEE
ILOS
GND
LOS1,
LOS2
GND1A,
GND2A
5 k
56 k
TZA3019
handbook, halfpage
MGS563
GND
56 k
VCC
ILOS
LOS1,
LOS2
GND1A,
GND2A
5 k
TZA3019
Fig.11 Loss of signal outputs, pins LOS1 and LOS2.
V
CC
-
V
EE
< 7 V.
b. Negative supply and positive logic.
c. Positive supply and positive logic.
a. Negative supply and negative logic.
handbook, halfpage
MGS562
VCC
5.6 k
VEE
ILOS
GND
LOS1,
LOS2
GND1A,
GND2A
5 k
TZA3019
Supply current
For the supply currents I
EE1B
and I
EE2B
, see Fig.12.
Using a positive supply voltage
Although the TZA3019 has been designed to use a single
-
3.3 V supply voltage (see Fig.13), a +3.3 V supply
(see Fig.14) can also be used. However, care should be
taken with respect to RF transmission lines. The on-chip
signals refer to the various ground pins as being positive
supply pins in a +3.3 V application. The external
transmission lines will most likely be referred to the
pins V
EE1A
, V
EE2A
, V
EE1B
and V
EE2B
, being the system
ground. The RF signals will change from one reference
plane to another when interfacing the RF inputs and
outputs. A positive supply application is very vulnerable to
interference with respect to this point. For a successful
+3.3 V application, special care should be taken when
designing the PCB layout in order to reduce the influence
of interference and to keep the positive supply voltage as
clean as possible.
MGS566
0
0.5
1
Vo(se)(p-p) (V)
0
0.8
0.2
40
60
IEE1B,
IEE2B
(mA)
(1)
5
17
58
50
20
10
30
(1) I
EE1B
and I
EE2B
at 25
C.
Fig.12 Supply current as a function of output
voltage
2000 Apr 10
15
Philips Semiconductors
Preliminary specification
2.5 Gbits/s dual postamplifier with level
detectors and 2
2 switch
TZA3019
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Note
1. JEDEC standard.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
EE
negative supply voltage
-
5.5
+0.5
V
V
n
DC voltage
pins IN1, IN1Q, IN2, IN2Q, LOSTH1, LOSTH2, LEVEL1, LEVEL2,
V
ref
, TEST, OUT2Q, OUT2, OUT1Q, OUT1, V
EEP
, GND1A,
GND2A, GND1B and GND2B
V
EE
-
0.5
0.5
V
pins LOS1, LOS2, INV1, INV2, S1 and S2
V
EE
-
0.5
V
EE
+ 7
V
I
n
DC current
pins IN1, IN1Q, IN2 and IN2Q
-
20
+20
mA
pins LOSTH1, LOSTH2, LEVEL1 and LEVEL2
0
14
A
pins V
ref,
TEST, LOS1 and LOS2
-
1
+1
mA
pins OUT1, OUT1Q, OUT2 and OUT2Q
-
30
+30
mA
pins INV1, INV2, S1 and S2
0
20
A
P
tot
total power dissipation
-
1.2
W
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
ambient temperature
-
40
+85
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th(j-s)
thermal resistance from junction to
solder point (exposed die pad); note 1
15
K/W
R
th(j-a)
thermal resistance from junction to
ambient; note 1
1s2p multi-layer test board
33
K/W
R
th(s-a)
thermal resistance from solder point to
ambient (exposed die pad); note 1
1s2p multi-layer test board
18
K/W
R
th(s-a)(req)
required thermal resistance from
solder point to ambient
LOS circuits switched on
V
o
= 200 mV (p-p) single-ended;
both output circuits
60
K/W
V
o
= 800 mV (p-p) single-ended;
both output circuits
30
K/W
2000 Apr 10
16
Philips Semiconductors
Preliminary specification
2.5 Gbits/s dual postamplifier with level
detectors and 2
2 switch
TZA3019
CHARACTERISTICS
Typical values at T
amb
= 25
C and V
EE
=
-
3.3 V; minimum and maximum values are valid over the entire ambient
temperature range and supply voltage range; all voltages referenced to ground; unless otherwise specified; note 1.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply
S
UPPLY PINS
V
EE1A
, V
EE1B
, V
EE2A
AND
V
EE2B
V
EE
negative supply voltage
-
3.13
-
3.3
-
3.47
V
I
EE1A
,
I
EE2A
negative supply current
LOS circuit power-down
14
24
34
mA
LOS circuit switched on
24
40
56
mA
I
EE1B
,
I
EE2B
negative supply current
amplifier power-down
2
6
10
mA
V
o
= 200 mV (p-p)
single-ended; one output
circuit
11
17
24
mA
V
o
= 800 mV (p-p)
single-ended; one output
circuit
47
60
77
mA
P
tot
total power dissipation
power-down
100
200
300
mW
both LOS circuits switched on
V
o
= 200 mV (p-p)
single-ended; both output
circuits
220
380
555
mW
V
o
= 800 mV (p-p)
single-ended; both output
circuits
450
660
925
mW
TC
temperature coefficient
LOS circuit switched on; I
EE1A
;
I
EE2A
30
50
80
A/
C
V
o
= 800 mV (p-p)
single-ended; I
EE1A
; I
EE2A
15
30
50
A/
C
T
j
junction temperature
-
40
-
+125
C
T
amb
ambient temperature
-
40
+25
+85
C
Inputs multiplexer and loss of signal detector
PECL
OR
CML
INPUT PINS
IN1, IN1Q, IN2
AND
IN2Q
V
i(p-p)
input voltage swing
(peak-to-peak value)
single-ended; note 2
50
-
500
mV
V
i(bias)
DC input bias voltage
-
0.28
-
0.33
-
0.4
V
V
I
DC and AC input window
voltage
note 3
-
1.0
-
+0.3
V
R
i
input resistance
single-ended
35
50
70
C
i
input capacitance
single-ended; note 3
0.6
0.8
1.2
pF
2000 Apr 10
17
Philips Semiconductors
Preliminary specification
2.5 Gbits/s dual postamplifier with level
detectors and 2
2 switch
TZA3019
Postamplifier
A
MPLIFIERS
A1A, A1B, A2A
AND
A2B
G
v
small signal voltage gain
V
o
= 200 mV (p-p)
single-ended; note 4
10
15
19
dB
V
o
= 800 mV (p-p)
single-ended; note 4
22
29
34
dB
f
D
signal path data rate
notes 5 and 9
-
2500
-
Mbits/s
f
-
3dB(l)
low
-
3 dB cut-off frequency
DC compensation
note 3
2
5
10
kHz
f
-
3dB(h)
high
-
3 dB cut-off frequency
-
2.0
-
GHz
t
PD
propagation delay
note 3
150
200
250
ps
t
PD
propagation delay
difference
at the same signal levels;
note 3
-
0
5
ps
J
total jitter
20 bits of the 28.5kbits
pattern; notes 3 and 6
-
8
-
ps
ct
crosstalk
crosstalk of IC only
90
110
-
dB
PECL
OR
CML
OUTPUT PINS
OUT1, OUT1Q, OUT2
AND
OUT2Q
V
o(se)(p-p)
single-ended output voltage
(peak-to-peak value)
50
load
200
-
800
mV
TC
temperature coefficient
output level
-1
0
-1
mV/K
t
r
rise time
20% to 80%; note 5
-
80
-
ps
t
f
fall time
80% to 20%; note 5
-
80
-
ps
R
o
output resistance
single-ended
70
100
130
C
o
output capacitance
single-ended; note 3
0.6
0.8
1.2
pF
L
EVEL CONTROL INPUT PINS
LEVEL1
AND
LEVEL2
V
i
input voltage
V
ref
-
0
V
R
i
input resistance
measured to
GND1A or GND2A
150
350
600
k
Multiplexer and inverter switch
PECL
OR
CML
INPUT PINS
IN1, IN1Q, IN2
AND
IN2Q
OS(red)
input offset reduction
V
o
= 200 mV (p-p)
single-ended; note 7
4
9
13
dB
V
o
= 800 mV (p-p)
single-ended; note 7
10
14
20
dB
V
io(cor)
input offset voltage
correction range
peak-to-peak value
single-ended
-
10
-
+10
mV
V
n(i)(eq)(rms)
equivalent input noise
voltage (RMS value)
V
o
= 800 mV (p-p)
single-ended; note 3
-
75
170
V
Fn
noise factor
note 3
-
5
12
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
2000 Apr 10
18
Philips Semiconductors
Preliminary specification
2.5 Gbits/s dual postamplifier with level
detectors and 2
2 switch
TZA3019
S
WITCH CIRCUIT
t
a
assert time
multiplexer and inverter
70
100
200
ns
t
d
de-assert time
multiplexer and inverter
55
80
160
ns
TTL
INPUT PINS
S1, S2, INV1
AND
INV2
V
IL
LOW-level input voltage
positive logic
2.0
-
V
EE
+ 7.3 V
negative logic
V
EE
-
0.3
-
-
2.5
V
V
IH
HIGH-level input voltage
negative logic
-
1.3
-
+0.3
V
positive logic
-
0.3
-
+0.8
V
R
i
input resistance
measured to V
EE1A
or V
EE2A
100
180
400
k
I
i
input current
-
10
-
+10
A
Received Signal Strength Indicator and Loss Of Signal detector
RSSI
AND
LOS
CIRCUIT
V
i(se)(p-p)
single-ended input voltage
swing (peak-to-peak value)
0.4
-
400
mV
DR
dynamic range
57
60
63
dB
S
LOS
LOS sensitivity
50 MHz, square; note 8
11
12.5
14
mV/dB
620 MHz, square; note 8
10.7
11.9
13
mV/dB
1.2 GHz, square; note 8
10
11.1
12.2
mV/dB
100 MB/s PRBS (2
31
-
1);
note 8
11.2
12.7
14.2
mV/dB
1.2 GB/s PRBS (2
31
-
1);
note 8
10.9
12.4
13.9
mV/dB
100 GB/s PRBS (2
31
- 1
);
note 8
10.7
11.9
13
mV/dB
TC
sens
temperature coefficient
sensitivity
-
2
0
-
2
V/dbK
LE
linearity error
see Fig.10
-
0.5
1
dB
OS(red)
input offset reduction
notes 3 and 7
25
35
45
dB
V
io(cor)
input offset voltage
correction range
peak-to-peak value
single-ended
-
5
-
+5
mV
f
-
3dB(l)
low
-
3 dB cut-off frequency
0.5
1
2
MHz
f
-
3dB(h)
high
-
3 dB cut-off frequency note 8
1.5
2
2.5
GHz
LOS
CIRCUIT
hys
LOS
LOS hysteresis
input signal waveform
dependency
2.0
3.0
4.0
dB
t
a
assert time
note 3
-
-
5
S
t
d
de-assert time
note 3
-
-
5
S
I
NPUT PINS
LOSTH1
AND
LOSTH2
V
i
input voltage
V
EE
-
0
V
R
i
input resistance
measured to V
EE1A
or V
EE2A
150
350
600
k
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
2000 Apr 10
19
Philips Semiconductors
Preliminary specification
2.5 Gbits/s dual postamplifier with level
detectors and 2
2 switch
TZA3019
Notes
1. It is assumed that both CML inputs carry a complementary signal with the specified peak-to-peak value (true
differential excitation).
2. Minimum signal with limiting output.
3. Guaranteed by design.
4. G
V
=
5. Based on
-
3dB cut-off frequency.
6. V
i
= 100 mV (p-p) single-ended and V
o
= 200 mV (p-p) single-ended.
7. Input offset reduction =
8. Sensitivity depends on the waveform and is therefore a function of
-
3 dB cut-off frequency see equation (1).
9. Low limit can go as low as DC if input signal overrides input offset voltage correction range.
O
UTPUT PINS
LOS1
AND
LOS2
V
o
output voltage
V
EE
-
3.5
V
I
o(sink)
output sink current
-
-
1
mA
R
o
output resistance
internal output series
resistance
3.5
5
6.5
k
O
UTPUT PINS
RSSI1
AND
RSSI2
V
o
output voltage
-
1
-
0
V
I
o
output current
-
1
-
+1
mA
Band gap reference circuit
O
UTPUT PIN
V
REF
V
ref
reference voltage
-
1.45
-
1.6
-
1.8
V
C
ext
allowed external
capacitance
-
-
10
pF
I
o(sink)
output sink current
-
-
500
A
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
o
V
i
------
G
AC
G
DC
-----------
APPLICATION INFORMATION
RF input and output connections
Striplines, or microstrips, with an odd mode characteristic
impedance of Z
o
= 50
must be used for the differential
RF connections on the PCB. This applies to both the signal
inputs and the signal outputs. The two lines in each pair
should have the same length.
Grounding and power supply decoupling
The ground connection on the PCB needs to be a large
copper filled area connected to a common ground plane
with an inductance as low as possible.
All V
EE
pins (one at each corner and the exposed die pad)
need to be connected to a common supply plane with an
inductance as low as possible. This plane should be
decoupled to ground. To avoid high frequency resonance,
multiple bypass capacitors should not be mounted at the
same location. To minimize low frequency switching noise
in the vicinity of the TZA3019, the power supply line should
be filtered once using a beaded capacitor circuit with a low
cut-off frequency (see Figs 13 and 14).
The V
EE
connection on the PCB also needs to be a large
copper area to improve heat transfer to the PCB and thus
support IC cooling.
2000 Apr 10
20
Philips Semiconductors
Preliminary specification
2.5 Gbits/s dual postamplifier with level
detectors and 2
2 switch
TZA3019
handbook, full pagewidth
,,,
,,,
,,,
,,,
,,,
,,,
,,,
,,,
,,,
,,,
,,,
,,,
,,,
,,,
,,
,,
,,
,,
,,
,,
,,,
,,,
,,,
,,,
,,,
,,,
,,,
,,,
,,,
,,,
,,,
,,,
IN1
IN1Q
GND1A
GND1A
IN2
IN2Q
GND2A
GND2A
OUT2
OUT2Q
GND2B
GND1B
GND2B
OUT1
OUT1Q
GND1B
LOS2
LEVEL2
S2
V
EE1A
V
EE2A
LOSTH1
S1
INV2
INV1
LOSTH2
V
EE1B
V
EE2B
LOS1
0603
0603
0603
0603
0603
0603
0603
0
1
2
3
4
5 mm
0603
0603
0603
0603
LEVEL1
V
ref
TEST
0603
0603
0603
0603
0603
0603
0603
0603
signal
/
V
EEP
V
EE
GND
GND
Boundary of 200 mm
2
area
To central
VEE decoupling
To central
VEE decoupling
To central
VEE decoupling
To central
VEE decoupling
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
17
18
19
20
21
22
23
24
8
7
6
5
4
3
2
1
MGS567
HTQFP
Fig.13 PCB layout for negative supply voltage.
In order to enable heat flow out of the package, the following measures have to be taken:
(1) Solder the 3
3 mm
2
die pad to a plane with maximum size.
(2) Add a plane with minimum 200 mm
2
in an inner layer, surrounded by ground layers.
(3) Use maximum amount of vias to connect two planes.
(4) Use minimum of openings in heat transport area between hot plane and ground planes.
2000 Apr 10
21
Philips Semiconductors
Preliminary specification
2.5 Gbits/s dual postamplifier with level
detectors and 2
2 switch
TZA3019
handbook, full pagewidth
IN1
IN1Q
GND1A
GND1A
IN2
IN2Q
GND2A
GND2A
OUT2
OUT2Q
GND2B
GND1B
GND2B
OUT1
OUT1Q
GND1B
LOS2
LEVEL2
S2
V
EE1A
V
EE2A
LOSTH1
S1
INV2
INV1
LOSTH2
V
EE1B
V
EE2B
LOS1
0603
HTQFP
0603
0603
0603
0603
0603
0603
0
1
2
3
4
5 mm
0603
0603
0603
0603
LEVEL1
V
ref
TEST
0603
0603
0603
0603
0603
0603
0603
0603
signal
/
V
EEP
V
EE
GND
GND
Boundary of 200 mm
2
area
To central
VEE decoupling
To central
VEE decoupling
To central
VEE decoupling
To central
VEE decoupling
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
17
18
19
20
21
22
23
24
8
7
6
5
4
3
2
1
,,
,,
,,
,,
,,
,,
,,
,,
,,
,,
,,
,,
,,
,,
,,
,,
,,
,,
,,
,,
,
,
,
,
,,
,,
MGS568
Fig.14 PCB layout for positive supply voltage.
In order to enable heat flow out of the package, the following measures have to be taken:
(1) Solder the 3
3 mm
2
die pad to a plane with maximum size.
(2) Add a plane with minimum 200 mm
2
in an inner layer, surrounded by ground layers.
(3) Use maximum amount of vias to connect two planes.
(4) Use minimum of openings in heat transport area between hot plane and ground planes.
2000 Apr 10
22
Philips Semiconductors
Preliminary specification
2.5 Gbits/s dual postamplifier with level
detectors and 2
2 switch
TZA3019
BONDING PAD LOCATIONS
Note
1. All x and y coordinates represent the position of the
centre of the pad in
m with respect to the centre of the
die (see Fig.15)
SYMBOL
PAD
COORDINATES
(1)
x
y
GND1A
1
-
928
+710
IN1
2
-
928
+553
IN1Q
3
-
928
+396
GND1A
4
-
928
+239
n.c.
5
-
928
+81
n.c.
6
-
928
-
81
GND2A
7
-
928
-
239
IN2
8
-
928
-
396
IN2Q
9
-
928
-
553
GND2A
10
-
928
-
710
V
EE2A
11
-
707
-
928
LOSTH1
12
-
550
-
928
LOSTH2
13
-
393
-
928
n.c.
14
-
236
-
928
LEVEL1
15
-
79
-
928
LEVEL2
16
+79
-
928
VREF
17
+236
-
928
n.c.
18
+393
-
928
TEST
19
+550
-
928
V
EE2B
20
+707
-
928
GND2B
21
+928
-
710
OUT2Q
22
+928
-
553
OUT2
23
+928
-
396
GND2B
24
+928
-
239
n.c.
25
+928
-
81
n.c.
26
+928
+81
GND1B
27
+928
+239
OUT1Q
28
+928
+396
OUT1
29
+928
+553
GND1B
30
+928
+710
V
EE1B
31
+707
+928
RSSI2
32
+550
+928
LOS2
33
+393
+928
RSSI1
34
+236
+928
LOS1
35
+79
+928
INV2
36
-
79
+928
INV1
37
-
236
+928
S2
38
-393
+928
S1
39
-550
+928
V
EE1A
40
-
707
+928
SYMBOL
PAD
COORDINATES
(1)
x
y
2000 Apr 10
23
Philips Semiconductors
Preliminary specification
2.5 Gbits/s dual postamplifier with level
detectors and 2
2 switch
TZA3019
handbook, full pagewidth
TZA3019U
x
y
0
0
MGT030
1
2
3
4
5
6
7
8
9
10
30
29
28
27
26
25
24
23
22
21
11 12 13 14 15 16 17 18 19 20
40 39 38 37 36 35 34 33 32 31
GND1A
GND2A
GND2A
IN2Q
IN1Q
IN2
V
EE2A
LOSTH2
LEVEL2
LOSTH1
n.c.
TEST
RSSI2
INV2
V
EE1A
INV1
LOS2
RSSI1
LOS1
S1
S2
V
EE2B
V
EE1B
OUT1Q
GND2B
OUT1
GND2B
OUT2Q
GND1B
n.c.
n.c.
GND1B
OUT2
V
ref
LEVEL1
n.c.
n.c.
n.c.
GND1A
IN1
Fig.15 Bonding pad locations TZA3019U.
2000 Apr 10
24
Philips Semiconductors
Preliminary specification
2.5 Gbits/s dual postamplifier with level
detectors and 2
2 switch
TZA3019
PACKAGE OUTLINE
UNIT
A
max.
A1
A2
A3
bp
HD
HE
Lp
ZD
(1)
ZE
(1)
c
e
L
y
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
1.2
0.15
0.05
1.05
0.95
0.25
0.27
0.17
0.20
0.09
5.1
4.9
0.5
7.1
6.9
0.89
0.61
7
0
0.08
0.08
0.2
1.0
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
0.75
0.45
SOT547-2
99-06-15
D
(1)
E
(1)
5.1
4.9
7.1
6.9
Dh
Eh
3.1
2.7
3.1
2.7
0.89
0.61
b
p
e
E
A
1
A
L
p
detail X
L
B
8
1
32
25
D
H
b
p
E
H
A
2
v
M
B
D
ZD
A
c
Z E
e
v
M
A
X
17
24
16
9
y
w
M
w
M
0
2.5
5 mm
scale
HTQFP32: plastic, heatsink thin quad flat package; 32 leads; body 5 x 5 x 1.0 mm
SOT547-2
Dh
Eh
heathsink side
(A )
3
pin 1 index
2000 Apr 10
25
Philips Semiconductors
Preliminary specification
2.5 Gbits/s dual postamplifier with level
detectors and 2
2 switch
TZA3019
4.2
A
1
b
A
2
UNIT
D
E1
e1
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
99-09-10
00-02-01
IEC
JEDEC
EIAJ
mm
0.80
0.10
0.05
0.70
0.60
5.1
4.9
3.2
3.0
5.1
4.9
3.2
3.0
0.35
0.20
DIMENSIONS (mm are the original dimensions)
SOT560-1
MO-217
D1
0.50
0.30
b1
0.50
0.35
b2
0.50
0.35
b3
4.15
e3
E
0.5
w
e
x
y
0.15
0.15
0.05
4.2
e2
4.15
e4
0.2
v
0
2.5
5 mm
scale
SOT560-1
HBCC32: plastic, heatsink bottom chip carrier; 32 terminals; body 5 x 5 x 0.65 mm
A
max.
detail X
y
v A
e
e1
e3
D1
e2
X
D
E
A
B
C
32
1
e4
E1
A1
A2
A
x C
x B
w M
w M
w M
w M
b2
b
b3
b1
ball A1
index area
2000 Apr 10
26
Philips Semiconductors
Preliminary specification
2.5 Gbits/s dual postamplifier with level
detectors and 2
2 switch
TZA3019
SOLDERING
Introduction to soldering surface mount packages
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our
"Data Handbook IC26; Integrated Circuit Packages"
(document order number 9398 652 90011).
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering is not always suitable
for surface mount ICs, or for printed-circuit boards with
high population densities. In these situations reflow
soldering is often used.
Reflow soldering
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.
Typical reflow peak temperatures range from
215 to 250
C. The top-surface temperature of the
packages should preferable be kept below 230
C.
Wave soldering
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
To overcome these problems the double-wave soldering
method was specifically developed.
If wave soldering is used the following conditions must be
observed for optimal results:
Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
For packages with leads on two sides and a pitch (e):
larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
The footprint must incorporate solder thieves at the
downstream end.
For packages with leads on four sides, the footprint must
be placed at a 45
angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Typical dwell time is 4 seconds at 250
C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Manual soldering
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300
C.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320
C.
2000 Apr 10
27
Philips Semiconductors
Preliminary specification
2.5 Gbits/s dual postamplifier with level
detectors and 2
2 switch
TZA3019
Suitability of surface mount IC packages for wave and reflow soldering methods
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the
"Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods".
2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).
3. If wave soldering is considered, then the package must be placed at a 45
angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
PACKAGE
SOLDERING METHOD
WAVE
REFLOW
(1)
BGA, SQFP
not suitable
suitable
HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, SMS
not suitable
(2)
suitable
PLCC
(3)
, SO, SOJ
suitable
suitable
LQFP, QFP, TQFP
not recommended
(3)(4)
suitable
SSOP, TSSOP, VSO
not recommended
(5)
suitable
2000 Apr 10
28
Philips Semiconductors
Preliminary specification
2.5 Gbits/s dual postamplifier with level
detectors and 2
2 switch
TZA3019
DATA SHEET STATUS
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DATA SHEET STATUS
PRODUCT
STATUS
DEFINITIONS
(1)
Objective specification
Development
This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification
Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
DEFINITIONS
Short-form specification
The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition
Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications
These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2000 Apr 10
29
Philips Semiconductors
Preliminary specification
2.5 Gbits/s dual postamplifier with level
detectors and 2
2 switch
TZA3019
NOTES
2000 Apr 10
30
Philips Semiconductors
Preliminary specification
2.5 Gbits/s dual postamplifier with level
detectors and 2
2 switch
TZA3019
NOTES
2000 Apr 10
31
Philips Semiconductors
Preliminary specification
2.5 Gbits/s dual postamplifier with level
detectors and 2
2 switch
TZA3019
NOTES
Philips Electronics N.V.
SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
2000
69
Philips Semiconductors a worldwide company
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Argentina: see South America
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,
Tel. +61 2 9704 8141, Fax. +61 2 9704 8139
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 68 9211, Fax. +359 2 68 9102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
Tel. +45 33 29 3333, Fax. +45 33 29 3905
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615 800, Fax. +358 9 6158 0920
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 4099 6161, Fax. +33 1 4099 6427
Germany: Hammerbrookstrae 69, D-20097 HAMBURG,
Tel. +49 40 2353 60, Fax. +49 40 2353 6300
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),
Tel. +39 039 203 6838, Fax +39 039 203 6800
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,
Tel. +48 22 5710 000, Fax. +48 22 5710 001
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 3341 299, Fax.+381 11 3342 553
Printed in The Netherlands
403510/50/01/pp
32
Date of release:
2000 Apr 10
Document order number:
9397 750 06019