DATA SHEET
Product specification
Supersedes data of 1997 Oct 17
File under Integrated Circuits, IC19
2000 Mar 29
INTEGRATED CIRCUITS
TZA3023
SDH/SONET STM4/OC12
transimpedance amplifier
2000 Mar 29
2
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12
transimpedance amplifier
TZA3023
FEATURES
Wide dynamic input range from 1
A to 1.5 mA
Low equivalent input noise of 3.5 pA/
Hz (typical)
Differential transimpedance of 21 k
Wide bandwidth from DC to 600 MHz
Differential outputs
On-chip Automatic Gain Control (AGC)
No external components required
Single supply voltage from 3.0 to 5.5 V
Bias voltage for PIN diode
Pin compatible with SA5223.
APPLICATIONS
Digital fibre optic receiver in short, medium and long
haul optical telecommunications transmission systems
or in high-speed data networks
Wideband RF gain block.
DESCRIPTION
The TZA3023 is a low-noise transimpedance amplifier with
AGC designed to be used in STM4/OC12 fibre optic links.
It amplifies the current generated by a photo detector
(PIN diode or avalanche photodiode) and converts it to a
differential output voltage.
ORDERING INFORMATION
BLOCK DIAGRAM
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
TZA3023T
SO8
plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
TZA3023U
-
bare die in waffle pack carriers; die dimensions 1.030
1.300 mm
-
handbook, full pagewidth
GAIN
CONTROL
BIASING
A1
1 (1)
8 (11, 12)
DREF
3 (4)
IPhoto
low noise
amplifier
single-ended to
differential converter
VCC
2, 4, 5 (2, 3, 5, 6, 7, 8)
GND
AGC
(1)
peak detector
TZA3023
6 (9) OUT
7 (10) OUTQ
MGK918
2
k
(13)
Fig.1 Block diagram.
The numbers in brackets refer to the pad numbers of the bare die version.
(1) AGC analog I/O is only available on the TZA3023U (pad 13).
2000 Mar 29
3
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12
transimpedance amplifier
TZA3023
PINNING
SYMBOL
PIN
TZA3023T
PAD
TZA3023U
TYPE
DESCRIPTION
DREF
1
1
analog output
bias voltage for PIN diode; cathode should be connected to
this pin
GND
2
2, 3
ground
ground
IPhoto
3
4
analog input
current input; anode of PIN diode should be connected to this
pin; DC bias level of 800 mV, one diode voltage above ground
GND
4
5, 6
ground
ground
GND
5
7, 8
ground
ground
OUT
6
9
output
data output; pin OUT goes HIGH when current flows into
pin IPhoto
OUTQ
7
10
output
data output; compliment of pin OUT
V
CC
8
11, 12
supply
supply voltage
AGC
-
13
input/output
AGC analog I/O
handbook, halfpage
1
2
3
4
8
7
6
5
MGK917
TZA3023T
VCC
OUTQ
GND
OUT
GND
GND
IPhoto
DREF
Fig.2 Pin configuration.
2000 Mar 29
4
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12
transimpedance amplifier
TZA3023
FUNCTIONAL DESCRIPTION
The TZA3023 is a transimpedance amplifier intended for
use in fibre optic links for signal recovery in STM4/OC12
applications. It amplifies the current generated by a photo
detector (PIN diode or avalanche photodiode) and
transforms it into a differential output voltage. The most
important characteristics of the TZA3023 are high receiver
sensitivity and wide dynamic range.
High receiver sensitivity is achieved by minimizing noise in
the transimpedance amplifier. The signal current
generated by a PIN diode can vary between
1
A to 1.5 mA (p-p). An AGC loop is implemented to
make it possible to handle such a wide dynamic range.
The AGC loop increases the dynamic range of the receiver
by reducing the feedback resistance of the preamplifier.
The AGC loop hold capacitor is integrated on-chip, so an
external capacitor is not needed for AGC. The AGC
voltage can be monitored at pad 13 on the bare die
(TZA3023U). Pad 13 is not bonded in the packaged device
(TZA3023T). This pad can be left unconnected during
normal operation. It can also be used to force an external
AGC voltage. If pad 13 is connected to GND, the internal
AGC loop is disabled and the receiver gain is at a
maximum. The maximum input current is then
approximately 50
A.
A differential amplifier converts the single-ended output of
the preamplifier to a differential output voltage (see Fig.3).
handbook, full pagewidth
MGK922
600
600
30
VCC
VOUTQ
VOUT
4.5 mA
2 mA
4.5 mA
30
Fig.3 Data output buffer.
handbook, full pagewidth
MGK885
VOO
VO(max)
VOQH
VOH
VOQL
VOL
VO(min)
Vo (p-p)
VCC
CML/PECL OUTPUT
Fig.4 Logic level symbol definitions for data outputs OUT and OUTQ.
2000 Mar 29
5
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12
transimpedance amplifier
TZA3023
PIN diode bias voltage DREF
The transimpedance amplifier together with the PIN diode
determines the performance of an optical receiver for a
large extent. Especially how the PIN diode is connected to
the input and the layout around the input pin influence the
key parameters like sensitivity, bandwidth and the Power
Supply Rejection Ratio (PSRR) of a transimpedance
amplifier. The total capacitance at the input pin is critical to
obtain the highest sensitivity. It should be kept to a
minimum by reducing the capacitor of the PIN diode and
the parasitics around the input pin. The PIN diode should
be placed very close to the IC to reduce the parasitics.
Because the capacitance of the PIN diode depends on the
reverse voltage across it, the reverse voltage should be
chosen as high as possible.
The PIN diode can be connected to the input in two ways
as shown in Figs 5 and 6. In Fig.5 the PIN diode is
connected between DREF and IPhoto. Pin DREF provides
an easy bias voltage for the PIN diode. The voltage at
DREF is derived from V
CC
by a low-pass filter. The
low-pass filter consisting of the internal resistor R1, C1 and
the external capacitor C2 rejects the supply voltage noise.
The external capacitor C2 should be equal or larger then
1 nF for a high PSRR.
The reverse voltage across the PIN diode is 4.2 V
(5
-
0.8 V) for 5 V supply or 2.5 V (3.3
-
0.8 V) for 3.3 V
supply.
The DC voltage at DREF decreases with increasing signal
levels. Consequently the reverse voltage across the
PIN diode will also decrease with increasing signal levels.
This can be explained with an example. When the
PIN diode delivers a peak-to-peak current of 1 mA, the
average DC current will be 0.5 mA. This DC current is
delivered by V
CC
through the internal resistor R1 of 2 k
which will cause a voltage drop of 1 V across the resistor
and the reverse voltage across the PIN diode will be
reduced by 1 V.
It is preferable to connect the cathode of the PIN diode to
a higher voltage then V
CC
when such a voltage source is
available on the board. In this case pin DREF can be left
unconnected. When a negative supply voltage is available,
the configuration in Fig.6 can be used. It should be noted
that in this case the direction of the signal current is
reversed compared to Fig.5. Proper filtering of the bias
voltage for the PIN diode is essential to achieve the
highest sensitivity level.
MCD900
R1
2 k
C1
10 pF
C2
1 nF
VCC
Ii
4
8
TZA3023
7
IPhoto
DREF
Fig.5
The PIN diode connected between the input
and pin DREF.
MCD901
R1
2 k
C1
10 pF
VCC
Ii
4
8
TZA3023
7
IPhoto
negative supply voltage
DREF
Fig.6
The PIN diode connected between the input
and a negative supply voltage.
2000 Mar 29
6
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12
transimpedance amplifier
TZA3023
AGC
TZA3023 transimpedance amplifier can handle input
currents from 0.5
A to 1.5 mA. This means a dynamic
range of 72 dB. At low input currents, the transimpedance
must be high to get enough output voltage, and the noise
should be low enough to guaranty minimum bit error rate.
At high input currents however, the transimpedance
should be low to avoid pulse width distortion. This means
that the gain of the amplifier has to vary depending on the
input signal level to handle such a wide dynamic range.
This is achieved in the TZA3023 by implementing an
Automatic Gain Control (AGC) loop.
The AGC loop consists of a peak detector, a hold capacitor
and a gain control circuit. The peak amplitude of the signal
is detected by the peak detector and it is stored on the hold
capacitor. The voltage over the hold capacitor is compared
to a threshold level. The threshold level is set to
10
A (p-p) input current. AGC becomes active only for
input signals larger than the threshold level.
It is disabled for smaller signals. The transimpedance is
then at its maximum value (21 k
differential).
When the AGC is active, the feedback resistor of the
transimpedance amplifier is reduced to keep the output
voltage constant. The transimpedance is regulated from
21 k
at low currents (I < 10
A) to 800
at high currents
(I < 500
A). Above 500
A the transimpedance is at its
minimum and can not be reduced further but the front-end
remains linear until input currents of 1.5 mA.
The upper part of Fig.7 shows the output voltages of the
TZA3023 (OUT and OUTQ) as a function of the DC input
current. In the lower part, the difference of both voltages is
shown. It can be seen from the figure that the output
changes linearly up to 10
A input current where AGC
becomes active. From this point on, AGC tries to keep the
differential output voltage constant around 200 mV for
medium range input currents (input currents <200
A).
The AGC can not regulate any more above 600
A input
current, and the output voltage rises again with the input
current.
handbook, full pagewidth
0
600
400
200
MCD914
1
10
2
10
(1)
(2)
(3)
Ii (
A)
Vo
(V)
Vo(dif)
(mV)
10
3
10
4
1
1.2
1.6
1.4
1.8
VCC = 3 V
VOUT
VOUTQ
Fig.7 AGC characteristics.
V
o(dif)
= V
OUT
-
V
OUTQ
.
(1) V
CC
= 3 V.
(2) V
CC
= 3.3 V.
(3) V
CC
= 5 V.
2000 Mar 29
7
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12
transimpedance amplifier
TZA3023
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
HANDLING
Precautions should be taken to avoid damage through electrostatic discharge. This is particularly important during
assembly and handling of the bare die. Additional safety can be obtained by bonding the V
CC
and GND pads first, the
remaining pads may then be bonded to their external connections in any order.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
CC
supply voltage
-
0.5
+6
V
V
n
DC voltage
pin 3/pad 4: IPhoto
-
0.5
+1
V
pins 6 and 7/pads 9 and 10: OUT and OUTQ
-
0.5
V
CC
+ 0.5
V
pad 13: AGC (TZA3023U only)
-
0.5
V
CC
+ 0.5
V
pin 1/pad 1: DREF
-
0.5
V
CC
+ 0.5
V
I
n
DC current
pin 3/pad 4: IPhoto
-
1
+2.5
mA
pins 6 and 7/pads 9 and 10: OUT and OUTQ
-
15
+15
mA
pad 13: AGC (TZA3023U only)
-
0.2
+0.2
mA
pin 1/pad 1: DREF
-
2.5
+2.5
mA
P
tot
total power dissipation
-
300
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
125
C
T
amb
ambient temperature
-
40
+85
C
SYMBOL
PARAMETER
VALUE
UNIT
R
th(j-a)
thermal resistance from junction to ambient
160
K/W
2000 Mar 29
8
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12
transimpedance amplifier
TZA3023
CHARACTERISTICS
Typical values at T
amb
= 25
C and V
CC
= 5 V; minimum and maximum values are valid over the entire ambient
temperature range and supply range; all voltages are measured with respect to ground; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CC
supply voltage
3
5
5.5
V
I
CC
supply current
V
CC
= 5 V; AC coupled;
R
L
= 50
23
28
45
mA
V
CC
= 3.3V; AC coupled;
R
L
= 50
20
28
42
mA
P
tot
total power dissipation
V
CC
= 5 V
-
140
248
mW
V
CC
= 3.3 V
-
95
152
mW
T
j
junction temperature
-
40
-
+125
C
T
amb
ambient temperature
-
40
+25
+85
C
R
tr
differential small-signal
transresistance of the
receiver
V
CC
= 5 V; AC coupled;
R
L
= 50
17.5
21
25
k
V
CC
= 3.3 V; AC coupled;
R
L
= 50
16
19.5
25
k
f
-
3dB(h)
high frequency
-
3 dB point
V
CC
= 5 V; C
i
= 0.7 pF
450
580
750
MHz
V
CC
= 3.3 V; C
i
= 0.7 pF
440
520
600
MHz
PSRR
power supply rejection ratio
measured differentially;
note 1
f = 100 kHz to 10 MHz
-
1
2
A/V
f = 10 to 100 MHz
-
2
5
A/V
f = 100 MHz to 1 GHz
-
5
100
A/V
Bias voltage: pin DREF
R
DREF
resistance between
pins DREF and V
CC
DC tested
1680
2000
2320
Input: pin IPhoto
V
bias(IPhoto)
input bias voltage on
pin IPhoto
720
800
970
mV
I
i(IPhoto)(p-p)
input current on pin IPhoto
(peak-to-peak value)
V
CC
= 5 V; note 2
-
1500
+4
+1500
A
V
CC
= 3.3 V; note 2
-
1000
+4
+1000
A
R
i
small-signal input resistance
f
i
= 1 MHz; input current
<2
A (p-p)
-
95
-
I
n(tot)
total integrated RMS noise
current over bandwidth
(referenced to input)
note 3
f = 311 MHz
-
55
-
nA
f = 450 MHz
-
80
-
nA
f = 622 MHz
-
120
-
nA
2000 Mar 29
9
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12
transimpedance amplifier
TZA3023
Notes
1. PSRR is defined as the ratio of the equivalent current change at the input (
I
IPhoto
) to a change in supply voltage:
For example, a + 4 mV disturbance on V
CC
at 10 MHz will typically add an extra 8 nA to the photodiode current. The
external capacitor between pins DREF and GND has a large impact on the PSRR. The specification is valid with an
external capacitor of 1 nF. The PSSR is guaranteed by design.
2. The Pulse Width Distortion (PWD) is <5% over the whole input current range. The PWD is defined as:
where T is the clock period. The PWD is measured differentially with
PRBS pattern of 10
-
23
.
3. All I
n(tot)
measurements were made with an input capacitance of C
i
= 1.2 pF. This was comprised of 0.7 pF for the
photodiode itself, with 0.3 pF allowed for the printed-circuit board layout and 0.2 pF intrinsic to the package. Noise
performance is measured differentially.
Data outputs: pins OUT and OUTQ
V
o(cm)
common mode output voltage AC coupled; R
L
= 50
V
CC
-
2
V
CC
-
1.7
V
CC
-
1.4
V
V
o(se)(p-p)
single-ended output voltage
(peak-to-peak value)
AC coupled; R
L
= 50
;
input current 100
A (p-p)
75
200
330
mV
V
OO
differential output offset
voltage
-
100
0
+100
mV
R
o(se)
single-ended output
resistance
DC tested
40
50
62
t
r
, t
f
rise time, fall time
V
CC
= 5 V; 20% to 80%;
input current <10
A (p-p)
400
510
700
ps
V
CC
= 3.3 V; 20% to 80%;
input current <10
A (p-p)
450
550
700
ps
Automatic gain control loop: pad AGC
I
th(AGC)
AGC threshold current
referred to the peak input
current; tested at 10 MHz
-
10
-
A
t
att(AGC)
AGC attack time
-
5
-
s
t
decay(AGC)
AGC decay time
-
10
-
ms
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
PSRR
I
IPhoto
V
CC
--------------------
=
PWD
pulse width
T
------------------------------
1
100%
=
2000 Mar 29
10
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12
transimpedance amplifier
TZA3023
TYPICAL PERFORMANCE CHARACTERISTICS
handbook, halfpage
-
40
0
(2)
40
Tj (
C)
ICC
(mA)
120
40
20
36
80
32
28
24
MCD908
(3)
(1)
Fig.8
Supply current as a function of the junction
temperature.
(1) V
CC
= 5 V.
(2) V
CC
= 3.3 V.
(3) V
CC
= 3 V.
handbook, halfpage
3
4
ICC
(mA)
VCC (V)
5
6
31.4
31.0
30.2
29.8
30.6
MCD909
Fig.9
Supply current as a function of the supply
voltage.
handbook, halfpage
3
4
Vi
(mV)
VCC (V)
5
6
808
806
802
800
804
MCD910
Fig.10 Input voltage as a function of the supply
voltage.
handbook, halfpage
-
40
0
(1)
(2)
(3)
40
Tj (
C)
Vi
(mV)
120
900
660
740
820
80
MCD911
Fig.11 Input voltage as a function of the junction
temperature.
(1) V
CC
= 5 V.
(2) V
CC
= 3.3 V.
(3) V
CC
= 3 V.
2000 Mar 29
11
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12
transimpedance amplifier
TZA3023
handbook, halfpage
3
(1)
(2)
4
VCC (V)
Vo(cm)
(V)
5
6
1.686
1.680
1.668
1.662
1.674
MCD912
Fig.12 Common mode voltage at the output as a
function of the supply voltage.
(1) V
CC
-
V
OUT
.
(2) V
CC
-
V
OUTQ
.
handbook, halfpage
-
40
0
(2)
(1)
40
Tj (
C)
Vo(cm)
(V)
120
1.85
1.55
1.65
1.75
80
MCD913
Fig.13 The common mode voltage at the output as
a function of the junction temperature.
V
CC
= 3.3 V.
(1) V
CC
-
V
OUT
.
(2) V
CC
-
V
OUTQ
.
2000 Mar 29
12
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12
transimpedance amplifier
TZA3023
APPLICATION AND TEST INFORMATION
handbook, full pagewidth
2
MCD898
1
8
VCC
DREF
3
IPhoto
GND
4
GND
5
GND
TZA3023T
7
OUTQ
6
OUT
50
50
Zo = 50
Zo = 50
22 nF
1 nF
680 nF
10
H
VP
100 nF
100 nF
Fig.14 Application diagram.
2000
Mar
29
13
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12
tr
ansimpedance amplifier
TZA3023
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k
, full pagewidth
MCD899
12
DOUTQ
6
OUT
7
OUTQ
13
DOUT
1 k
50
50
10 nF
10 nF
100 nF
8 pF
noise filter:
1-pole, 400 MHz
100
61 k
TZA3023T
TZA3044
SUB
JAM
STQ
ST
AGND
8
VCC
VCC
6
VCCA
16
RSET
7
CF
15
Vref
14
VCCD
DGND
data out
level-detect
status
VCC
-
2 V
5
DINQ
4
DIN
3
IPhoto
1
DREF
22 nF
680 nF
100 nF
1 nF
7.5
pF
1.1
pF
16.4 nH
16.4 nH
optional noise filter:
3-pole, 470 MHz Bessel
(1)
(1)
(1)
2
GND
4
GND
5
GND
3
1
8
9
10
11
Fig.15 STM4/OC12 receiver using the TZA3023T and postamplifier TZA3044.
(1) Ferrite bead e.g. Murata BLM10A700S.
2000 Mar 29
14
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12
transimpedance amplifier
TZA3023
Test circuits
handbook, full pagewidth
MCD902
1 k
51
Zo = 50
Zo = 50
Zo = 50
IPhoto
OUT
OUTQ
10 nF
TR
D
VCC
100 nF
TR
1
SAMPLING
OSCILLOSCOPE/
TDR/TDT
2
PORT 1
PORT 2
NETWORK ANALYZER
ZT = s21.(R + Zi) . 2
R = 1 k
, Zi = 100
S-PARAMETER TEST SET
100 nF
TZA3023
OM5803
PATTERN
GENERATOR
2
23
-1 PRBS
C IN
D
C
C
Fig.16 Electrical test circuit.
2000 Mar 29
15
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12
transimpedance amplifier
TZA3023
handbook, full pagewidth
MCD903
Zo = 50
IPhoto
PIN
DREF
DIN
DINQ
0 dBm/1300
Laser
IN
OUT
OPTICAL
INPUT
OUT
OUTQ
TR
D
VCC
100 nF
22 nF
10 nF
10%
90%
Data
in
Clock
in
ERROR DETECTOR
TR
1
2
100 nF
TZA3023
TZA3001
OM5804
OM5802
PATTERN
GENERATOR
LASER DRIVER
OPTICAL ATTENUATOR
LIGHTWAVE MULTIMETER
622.080 MHz
2
23
-1 PRBS
C IN
D
C
C
-
9.54 dBm
SAMPLING
OSCILLOSCOPE/
TDR/TDT
Fig.17 Optical test circuit.
2000 Mar 29
16
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12
transimpedance amplifier
TZA3023
handbook, full pagewidth
MCD904
Fig.18 Differential output with
-
30 dBm optical input power [input current of 1.63
A (p-p)].
handbook, full pagewidth
MCD905
Fig.19 Differential output with
-
20 dBm optical input power [input current of 16.3
A (p-p)].
2000 Mar 29
17
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12
transimpedance amplifier
TZA3023
handbook, full pagewidth
MCD906
Fig.20 Differential output with
-
10 dBm optical input power [input current of 163
A (p-p)].
handbook, full pagewidth
MCD907
Fig.21 Differential output with
-
2 dBm optical input power [input current of 1030
A (p-p)].
2000 Mar 29
18
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12
transimpedance amplifier
TZA3023
BONDING PAD LOCATIONS
Note
1. All coordinates are referenced, in
m, to the bottom
left-hand corner of the die.
SYMBOL
PAD
COORDINATES
(1)
x
y
DREF
1
95
881
GND
2
95
618
GND
3
95
473
IPhoto
4
95
285
GND
5
215
95
GND
6
360
95
GND
7
549
95
GND
8
691
95
OUT
9
785
501
OUTQ
10
785
641
V
CC
11
567
1055
V
CC
12
424
1055
AGC
13
259
1055
TZA3023U
1
10
9
2
3
4
5
0
x
y
0
13
12
11
6
7
8
1300
m
1030
m
DREF
IPhoto
GND
GND
OUTQ
OUT
MCD897
GND
GND
AGC
V
CC
V
CC
GND
GND
Fig.22 Bonding pad locations of the TZA3023U.
Physical characteristics of the bare die
PARAMETER
VALUE
Glass passivation
2.1
m PSG (PhosphoSilicate Glass) on top of 0.65
m oxynitride
Bonding pad dimension
minimum dimension of exposed metallization is 90
90
m (pad size = 100
100
m)
Metallization
1.22
m W/AlCu/TiW
Thickness
380
m nominal
Size
1.03
1.30 mm (1.34 mm
2
)
Backing
silicon; electrically connected to GND potential through substrate contacts
Attach temperature
<440
C; recommended die attach is glue
Attach time
<15 s
2000 Mar 29
19
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12
transimpedance amplifier
TZA3023
PACKAGE OUTLINE
UNIT
A
max.
A
1
A
2
A
3
b
p
c
D
(1)
E
(2)
(1)
e
H
E
L
L
p
Q
Z
y
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
inches
1.75
0.25
0.10
1.45
1.25
0.25
0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8
1.27
6.2
5.8
1.05
0.7
0.6
0.7
0.3
8
0
o
o
0.25
0.1
0.25
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
1.0
0.4
SOT96-1
X
w
M
A
A
1
A
2
b
p
D
H
E
L
p
Q
detail X
E
Z
e
c
L
v
M
A
(A )
3
A
4
5
pin 1 index
1
8
y
076E03
MS-012
0.069
0.010
0.004
0.057
0.049
0.01
0.019
0.014
0.0100
0.0075
0.20
0.19
0.16
0.15
0.050
0.244
0.228
0.028
0.024
0.028
0.012
0.01
0.01
0.041
0.004
0.039
0.016
0
2.5
5 mm
scale
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
97-05-22
99-12-27
2000 Mar 29
20
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12
transimpedance amplifier
TZA3023
SOLDERING
Introduction to soldering surface mount packages
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our
"Data Handbook IC26; Integrated Circuit Packages"
(document order number 9398 652 90011).
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering is not always suitable
for surface mount ICs, or for printed-circuit boards with
high population densities. In these situations reflow
soldering is often used.
Reflow soldering
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.
Typical reflow peak temperatures range from
215 to 250
C. The top-surface temperature of the
packages should preferable be kept below 230
C.
Wave soldering
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
To overcome these problems the double-wave soldering
method was specifically developed.
If wave soldering is used the following conditions must be
observed for optimal results:
Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
For packages with leads on two sides and a pitch (e):
larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
The footprint must incorporate solder thieves at the
downstream end.
For packages with leads on four sides, the footprint must
be placed at a 45
angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Typical dwell time is 4 seconds at 250
C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Manual soldering
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300
C.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320
C.
2000 Mar 29
21
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12
transimpedance amplifier
TZA3023
Suitability of surface mount IC packages for wave and reflow soldering methods
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the
"Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods".
2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).
3. If wave soldering is considered, then the package must be placed at a 45
angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
PACKAGE
SOLDERING METHOD
WAVE
REFLOW
(1)
BGA, LFBGA, SQFP, TFBGA
not suitable
suitable
HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, SMS
not suitable
(2)
suitable
PLCC
(3)
, SO, SOJ
suitable
suitable
LQFP, QFP, TQFP
not recommended
(3)(4)
suitable
SSOP, TSSOP, VSO
not recommended
(5)
suitable
2000 Mar 29
22
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12
transimpedance amplifier
TZA3023
DATA SHEET STATUS
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DATA SHEET STATUS
PRODUCT
STATUS
DEFINITIONS
(1)
Objective specification
Development
This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification
Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
DEFINITIONS
Short-form specification
The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition
Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications
These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
BARE DIE DISCLAIMER
All die are tested and are guaranteed to comply with all
data sheet limits up to the point of wafer sawing for a
period of ninety (90) days from the date of Philips' delivery.
If there are data sheet limits not guaranteed, these will be
separately indicated in the data sheet. There are no post
packing tests performed on individual die or wafer. Philips
Semiconductors has no control of third party procedures in
the sawing, handling, packing or assembly of the die.
Accordingly, Philips Semiconductors assumes no liability
for device functionality or performance of the die or
systems after third party sawing, handling, packing or
assembly of the die. It is the responsibility of the customer
to test and qualify their application in which the die is used.
2000 Mar 29
23
Philips Semiconductors
Product specification
SDH/SONET STM4/OC12
transimpedance amplifier
TZA3023
NOTES
Philips Electronics N.V.
SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
2000
69
Philips Semiconductors a worldwide company
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Printed in The Netherlands
403510/200/02/pp
24
Date of release:
2000 Mar 29
Document order number:
9397 750 06816
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