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Электронный компонент: TZA3033T

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DATA SHEET
Objective specification
File under Integrated Circuits, IC19
1998 Jul 08
INTEGRATED CIRCUITS
TZA3033
SDH/SONET STM1/OC3
transimpedance amplifier
1998 Jul 08
2
Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 transimpedance amplifier
TZA3033
FEATURES
Low equivalent input noise, typically 1 pA/
Hz
Wide dynamic range, typically 0.25
A to 1.6 mA
Differential transimpedance of 117 k
Bandwidth minimum 150 MHz
Differential outputs
On-chip AGC (Automatic Gain Control)
No external components required
Single supply voltage from 3.0 to 5.5 V
Bias voltage for PIN diode
Pin compatible with SA5223.
APPLICATIONS
Digital fibre optic receiver in short, medium and long
haul optical telecommunications transmission systems
or in high speed data networks
Wideband RF gain block.
GENERAL DESCRIPTION
The TZA3033 is a low-noise transimpedance amplifier with
AGC designed to be used in STM1/OC3 fibre optic links.
It amplifies the current generated by a photo detector
(PIN diode or avalanche photodiode) and converts it to a
differential output voltage.
ORDERING INFORMATION
BLOCK DIAGRAM
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
TZA3033T
SO8
plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
TZA3033U
naked die
die in waffle pack carriers; die dimensions 0.960
1.210 mm
-
Fig.1 Block diagram.
(1) AGC analog I/O is only available on the TZA3033U (pad 15).
The numbers in brackets refer to the pad numbers of the naked die version.
handbook, full pagewidth
GAIN
CONTROL
BIASING
A2
A1
1 (1)
1 nF
DREF
3 (5)
IPhoto
low noise
amplifier
single-ended to
differential converter
VCC
8 (13, 14)
(15)
VCC
3
2, 4, 5 (3, 4, 7, 8, 9, 10)
GND
AGC
(1)
peak detector
TZA3033
(11) 6
OUT
(12) 7
OUTQ
MGR368
65 pF
2 k
1998 Jul 08
3
Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 transimpedance amplifier
TZA3033
PINNING
SYMBOL
PIN
TYPE
DESCRIPTION
DREF
1
analog output
bias voltage for PIN diode (V
CC
); cathode should be connected to this pin
GND
2
ground
ground
IPhoto
3
analog input
current input; anode of PIN diode should be connected to this pin; DC bias
voltage is 1048 mV
GND
4
ground
ground
GND
5
ground
ground
OUT
6
data output
data output; OUT goes HIGH when current flows into IPhoto (pin 3)
OUTQ
7
data output
compliment of OUT (pin 6)
V
CC
8
supply
supply voltage
Fig.2 Pin configuration.
handbook, halfpage
1
2
3
4
8
7
6
5
MGR369
TZA3033T
VCC
OUTQ
GND
OUT
GND
GND
IPhoto
DREF
1998 Jul 08
4
Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 transimpedance amplifier
TZA3033
PAD CONFIGURATION
Bonding pad locations
Fig.3 Bonding diagram TZA3033U.
Pad 15 (AGC) is not bonded.
handbook, full pagewidth
MGR371
OUTQ
VCC
OUT
GND
GND
DREF
AGC
GND
IPhoto
3
6
2
1
8
7
4
5
TZA3033U
1
12
11
3
4
2
6
TESTB
5
7
15
14 13
8
9
10
TESTA
1998 Jul 08
5
Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 transimpedance amplifier
TZA3033
Pad centre locations
Note
1. All coordinates (
m) are measured with respect to the
bottom left-hand corner of the die.
SYMBOL
PAD
COORDINATES
(1)
x
y
DREF
1
95
881
TESTA
2
95
735
GND
3
95
618
GND
4
95
473
IPhoto
5
95
285
TESTB
6
95
147
GND
7
215
95
GND
8
360
95
GND
9
549
95
GND
10
691
95
OUT
11
785
501
OUTQ
12
785
641
V
CC
13
567
1055
V
CC
14
424
1055
AGC
15
259
1055
FUNCTIONAL DESCRIPTION
The TZA3033 is a transimpedance amplifier intended for
use in fibre optic links for signal recovery in STM1/OC3
applications. It amplifies the current generated by a photo
detector (PIN diode or avalanche photodiode) and
transforms it into a differential output voltage. The most
important characteristics of the TZA3033 are high receiver
sensitivity and wide dynamic range.
High receiver sensitivity is achieved by minimizing noise in
the transimpedance amplifier.
The signal current generated by a PIN diode can vary
between 0.25
A to 1.6 mA (peak-to-peak value).
An AGC loop (see Fig.1) is implemented to make it
possible to handle such a wide dynamic range.
The AGC loop increases the dynamic range of the
receiver by reducing the feedback resistance of the
preamplifier. The AGC loop hold capacitor is integrated
on-chip, so an external capacitor is not needed for AGC.
The AGC voltage can be monitored at pad 15 on the naked
die (TZA3033U). Pad 15 is not bonded in the packaged
device (TZA3033T). This pad can be left unconnected
during normal operation. It can also be used to force an
external AGC voltage. If pad 15 (AGC) is connected to
V
CC
, the internal AGC loop is disabled and the receiver
gain is at a maximum. The maximum input current is then
about 10
A.
A differential amplifier converts the output of the
preamplifier to a differential voltage. The data output circuit
is given in Fig.4.
The logic level symbol definitions are shown in Fig.5.
1998 Jul 08
6
Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 transimpedance amplifier
TZA3033
Fig.4 Data output circuit.
handbook, full pagewidth
MGR290
800
800
30
VCC
OUTQ
OUT
4.5 mA
2 mA
4.5 mA
30
Fig.5 Logic level symbol definitions for data outputs OUT and OUTQ.
handbook, full pagewidth
MGR243
VOO
VO(max)
VOQH
VOH
VOQL
VOL
VO(min)
Vo(p-p)
VCC
1998 Jul 08
7
Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 transimpedance amplifier
TZA3033
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
CHARACTERISTICS
For typical values T
amb
= 25
C and V
CC
= 5 V; minimum and maximum values are valid over the entire ambient
temperature range and process spread.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
CC
supply voltage
-
0.5
+5.5
V
V
n
DC voltage
pin 3/pad 5: IPhoto
-
0.5
+2
V
pins 6 and 7/pads 11 and 12: OUT and OUTQ
-
0.5
V
CC
+ 0.5
V
pad 15: AGC (TZA3033U only)
-
0.5
V
CC
+ 0.5
V
pin 1/pad 1: DREF
-
0.5
V
CC
+ 0.5
V
I
n
DC current
pin 3/pad 5: IPhoto
-
1
+2.5
mA
pins 6 and 7/pads 11 and 12: OUT and OUTQ
-
15
+15
mA
pad 15: AGC (TZA3033U only)
-
0.2
+0.2
mA
pin 1/pad 1: DREF
-
2.5
+2.5
mA
P
tot
total power dissipation
-
300
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
ambient temperature
-
40
+85
C
SYMBOL
PARAMETER
VALUE
UNIT
R
th(j-s)
thermal resistance from junction to solder point
tbf
K/W
R
th(j-a)
thermal resistance from junction to ambient
tbf
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CC
supply voltage
3
5
5.5
V
I
CC
supply current
AC coupled; R
L
= 50
-
37
-
mA
P
tot
total power dissipation
V
CC
= 5 V
-
185
-
mW
V
CC
= 3.3 V
-
116
-
mW
T
j
junction temperature
-
40
-
+120
C
T
amb
ambient temperature
-
40
+25
+85
C
R
tr
small-signal
transresistance of the
receiver
measured differentially;
AC coupled
R
L
=
-
234
-
k
R
L
= 50
-
117
-
k
f
-
3dB(h)
high frequency
-
3 dB point
C
i
= 0.7 pF
120
150
-
MHz
1998 Jul 08
8
Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 transimpedance amplifier
TZA3033
Notes
1. All I
n(tot)
measurements were made with an input capacitance of C
i
= 1 pF. This was comprised of 0.5 pF for the
photodiode itself, with 0.3 pF allowed for the printed-circuit board layout and 0.2 pF intrinsic to the package.
2. PSRR is defined as the ratio of the equivalent current change at the input (
I
IPhoto
) to a change in supply voltage:
For example, a disturbance of +4 mV disturbance on V
CC
at 10 MHz will typically add an extra 2 nA to the photodiode
current. The external capacitor between DREF and GND has a large impact on PSRR. The specification is valid with
an external capacitor of 1 nF.
I
n(tot)
total integrated RMS
noise current over
bandwidth
referred to input; note 1
f = 90 MHz
-
16
-
nA
f = 120 MHz
-
tbf
-
nA
f = 150MHz
-
tbf
-
nA
R
tr
/
t
AGC loop constant
-
1
-
dB/ms
PSRR
power supply rejection
ratio
measured differentially;
note 2
f = 100 kHz to 10 MHz
-
0.5
-
A/V
f = 100 MHz
-
10
-
A/V
Input: IPhoto
I
i(IPhoto)(p-p)
input current on
pin IPhoto (peak-to-peak
value)
V
CC
= 5 V
-
500
+1
+1800
A
V
CC
= 3.3 V
-
500
+1
+1600
A
V
bias(IPhoto)
input bias voltage on
pin IPhoto
-
1048
-
mV
Data outputs: OUT and OUTQ
V
O(CM)
common mode output
voltage
AC coupled; R
L
= 50
V
CC
-
1.800 V
CC
-
1.700 V
CC
-
1.600 V
V
o(se)(p-p)
single-ended output
voltage (peak-to-peak
value)
AC coupled; R
L
= 50
-
150
260
mV
V
OO
differential output offset
voltage
-
100
-
+100
mV
R
o
output resistance
single-ended; DC tested
42
50
58
t
r
rise time
20% to 80%
-
tbf
-
ps
t
f
fall time
80% to 20%
-
tbf
-
ps
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
PSRR
I
IPhoto
V
CC
--------------------
=
1998 Jul 08
9
Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 transimpedance amplifier
TZA3033
APPLICATION INFORMATION
Fig.6 Application diagram.
handbook, full pagewidth
2
MGR370
1
8
VCC
DREF
3
IPhoto
GND
4
GND
5
GND
TZA3033T
7
OUTQ
6
OUT
R4
50
R3
50
Zo = 50
Zo = 50
22 nF
1 nF
680 nF
10
H
VP
100 nF
100 nF
1998 Jul 08
10
Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 transimpedance amplifier
TZA3033
PACKAGE OUTLINE
UNIT
A
max.
A
1
A
2
A
3
b
p
c
D
(1)
E
(2)
(1)
e
H
E
L
L
p
Q
Z
y
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
inches
1.75
0.25
0.10
1.45
1.25
0.25
0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8
1.27
6.2
5.8
1.05
0.7
0.6
0.7
0.3
8
0
o
o
0.25
0.1
0.25
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
1.0
0.4
SOT96-1
X
w
M
A
A
1
A
2
b
p
D
H
E
L
p
Q
detail X
E
Z
e
c
L
v
M
A
(A )
3
A
4
5
pin 1 index
1
8
y
076E03S
MS-012AA
0.069
0.010
0.004
0.057
0.049
0.01
0.019
0.014
0.0100
0.0075
0.20
0.19
0.16
0.15
0.050
0.244
0.228
0.028
0.024
0.028
0.012
0.01
0.01
0.041
0.004
0.039
0.016
0
2.5
5 mm
scale
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
95-02-04
97-05-22
1998 Jul 08
11
Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 transimpedance amplifier
TZA3033
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our
"Data Handbook IC26; Integrated Circuit Packages"
(order code 9398 652 90011).
Reflow soldering
Reflow soldering techniques are suitable for all SO
packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250
C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45
C.
Wave soldering
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
The longitudinal axis of the package footprint must be
parallel to the solder flow.
The package footprint must incorporate solder thieves at
the downstream end.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Maximum permissible solder temperature is 260
C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150
C within
6 seconds. Typical dwell time is 4 seconds at 250
C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Repairing soldered joints
Fix the component by first soldering two diagonally-
opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300
C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320
C.
1998 Jul 08
12
Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 transimpedance amplifier
TZA3033
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1998 Jul 08
13
Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 transimpedance amplifier
TZA3033
NOTES
1998 Jul 08
14
Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 transimpedance amplifier
TZA3033
NOTES
1998 Jul 08
15
Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 transimpedance amplifier
TZA3033
NOTES
Internet: http://www.semiconductors.philips.com
Philips Semiconductors a worldwide company
Philips Electronics N.V. 1998
SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
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Printed in The Netherlands
425102/1200/01/pp16
Date of release: 1998 Jul 08
Document order number:
9397 750 03878