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Электронный компонент: TZA3036

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1.
General description
The TZA3036 is a transimpedance amplifier with Automatic Gain Control (AGC), designed
to be used in STM1/OC3 fiber optic links. It amplifies the current generated by a photo
detector (PIN diode or avalanche photodiode) and converts it to a differential output
voltage. It offers a current mirror of average photo current for RSSI monitoring to be used
in SFF-8472 compliant modules.
The low noise characteristics makes it suitable for STM1/OC3 applications, but also for
FTTx applications.
2.
Features
I
Low equivalent input noise, typically 12 nA (RMS)
I
Wide dynamic range, typically 0.18
A to 1.5 mA (p-p)
I
Differential transimpedance of 69 k
(typical)
I
Bandwidth from DC to 160 MHz (typical)
I
Differential outputs
I
On-chip (AGC) with possibility of external control
I
Single supply voltage 3.3 V; range 2.9 V to 3.6 V
I
Bias voltage for PIN diode
I
On-chip current mirror of average photo current for RSSI monitoring
I
Identical ports available on both sides of die for easy bond layout and RF polarity
selection
3.
Applications
I
Digital fiber optic receiver modules in telecommunications transmission systems, in
high speed data networks or in FTTx systems.
TZA3036
SDH/SONET STM1/OC3 transimpedance amplifier
Rev. 01 -- 24 March 2006
Product data sheet
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
TZA3036_1
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 24 March 2006
2 of 15
Philips Semiconductors
TZA3036
SDH/SONET STM1/OC3 transimpedance amplifier
4.
Ordering information
5.
Block diagram
Table 1.
Ordering information
Type number
Package
Name
Description
Version
TZA3036U
-
bare die, dimensions approximately
0.82 mm
1.3 mm
-
Fig 1.
Block diagram
290
OUTQ
AGC
GND
OUT
V
CC
GAIN
CONTROL
BIASING
PEAK DETECTOR
TZA3036
DPHOTO
CDREF
CVCC
low noise
amplifier
single-ended to
differential converter
output
buffers
7 or 13
8 or 14
IDREF_MON 5 or 16
DREF
I
DREF
0.2
I
DREF
I
IDREF_MON
I
PIN
R
DREF
1 or 3
9, 10, 11, 12
6 or 15
4 or 17
IPHOTO 2
RIDREF_MON
001aad075
TZA3036_1
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 24 March 2006
3 of 15
Philips Semiconductors
TZA3036
SDH/SONET STM1/OC3 transimpedance amplifier
6.
Pinning information
6.1 Pinning
6.2 Pin description
Fig 2.
Pin configuration
001aad076
V
CC
IDREF_MON
AGC
OUTQ
OUT
GND
GND
V
CC
IDREF_MON
AGC
DREF
IPHOTO
DREF
OUT
OUTQ
GND
GND
3
1
17
4
16
5
15
6
12
9
11
10
2
7
8
14
13
TZA3036
Table 2.
Bonding pad description
Bonding pad locations with respect to the center of the die (see
Figure 10
); X and Y are in
m.
Symbol
Pad
X
Y
Type
Description
DREF
1
-
493.6
140
output
bias voltage output for PIN diode; connect cathode of
PIN diode to pad 1 or pad 3
IPHOTO
2
-
493.6
0
input
current input; anode of PIN diode should be connected
to this pad
DREF
3
-
493.6
-
140
output
bias voltage output for PIN diode; connect cathode of
PIN diode to pad 1 or pad 3
V
CC
4
-
353.6
-
278.6
supply
supply voltage; connect supply to pad 4 or pad 17
IDREF_MON
5
-
213.6
-
278.6
output
current output for RSSI measurements; connect a
resistor to pad 5 or pad 16 and ground
AGC
6
-
73.6
-
278.6
input
AGC voltage; use pad 6 or pad 15
OUTQ
7
66.4
-
278.6
output
data output; complement of pad OUT; use pad 7 or pad
13
OUT
8
206.4
-
278.6
output
data output; use pad 8 or pad 14
[1]
GND
9
346.4
-
278.6
ground
ground; connect together pads 9, 10, 11 and 12 as
many as possible
GND
10
486.4
-
278.6
ground
ground; connect together pads 9, 10, 11 and 12 as
many as possible
TZA3036_1
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 24 March 2006
4 of 15
Philips Semiconductors
TZA3036
SDH/SONET STM1/OC3 transimpedance amplifier
[1]
These pads go HIGH when current flows into pad IPHOTO.
7.
Functional description
The TZA3036 is a TransImpedance Amplifier (TIA) intended for use in fiber optic links for
signal recovery in STM1/OC3 or FTTx applications. It amplifies the current generated by a
photo detector (PIN diode or avalanche photodiode) and converts it to a differential output
voltage.
The most important characteristics of the TZA3036 are high receiver sensitivity, wide
dynamic range and large bandwidth. Excellent receiver sensitivity is achieved by
minimizing transimpedance amplifier noise.
The TZA3036 has a wide dynamic range to handle the signal current generated by the
PIN diode which can vary from 0.18
A to 1.5 mA (p-p). This is implemented by an AGC
loop which reduces the preamplifier feedback resistance so that the amplifier remains
linear over the whole input range. The AGC loop hold capacitor is integrated on-chip, so
an external capacitor is not required.
The bandwidth of TZA3036 is optimized for STM1/OC3 application. It works from DC
onward due to the absence of offset control loops. This allows for excellent performance
regardless of signal content (long sequences of identical bits can be converted). A
differential amplifier converts the output of the preamplifier to a differential voltage.
7.1 PIN diode connections
The performance of an optical receiver is largely determined by the combined effect of the
transimpedance amplifier and the PIN diode. In particular, the method used to connect the
PIN diode to the input (pad IPHOTO) and the layout around the input pad strongly
influences the main parameters of a transimpedance amplifier, such as sensitivity,
bandwidth, and PSRR.
Sensitivity is most affected by the value of the total capacitance at the input pad.
Therefore, to obtain the highest possible sensitivity the total capacitance should be as low
as possible.
GND
11
486.4
278.6
ground
ground; connect together pads 9, 10, 11 and 12 as
many as possible
GND
12
346.4
278.6
ground
ground; connect together pads 9, 10, 11 and 12 as
many as possible
OUTQ
13
206.4
278.6
output
data output; complement of pad OUT; use pad 7 or pad
13
OUT
14
66.4
278.6
output
data output; use pad 8 or pad 14
[1]
AGC
15
-
73.6
278.6
input
AGC voltage; use pad 6 or pad 15
IDREF_MON
16
-
213.6
278.6
output
current output for RSSI measurements; connect a
resistor to pad 5 or pad 16 and ground
V
CC
17
-
353.6
278.6
supply
supply voltage; connect supply to pad 4 or pad 17
Table 2.
Bonding pad description
...continued
Bonding pad locations with respect to the center of the die (see
Figure 10
); X and Y are in
m.
Symbol
Pad
X
Y
Type
Description
TZA3036_1
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 24 March 2006
5 of 15
Philips Semiconductors
TZA3036
SDH/SONET STM1/OC3 transimpedance amplifier
The parasitic capacitance can be minimized through:
1. Reducing the capacitance of the PIN diode. This is achieved by proper choice of PIN
diode and typically a high reverse voltage.
2. Reducing the parasitics around the input pad. This is achieved by placing the PIN
diode as close as possible to the TIA.
The PIN diode can be biased with a positive or a negative voltage.
Figure 3
shows the PIN
diode biased positively, using the on-chip bias pad DREF. The voltage at DREF is derived
from V
CC
by a low-pass filter comprising internal resistor R
DREF
and external capacitor C2
which decouples any supply voltage noise. The value of external capacitor C2 affects the
value of PSRR and should have a minimum value of 470 pF. Increasing this value
improves the value of PSRR. The current through R
DREF
is measured and sourced at pad
IDREF_MON, see
Section 7.3
.
If the biasing for the PIN diode is done external to the IC, pad DREF can be left
unconnected. If a negative bias voltage is used, the configuration shown in
Figure 4
can
be used. In this configuration, the direction of the signal current is reversed to that shown
in
Figure 3
. It is essential that in these applications, the PIN diode bias voltage is filtered to
achieve the best sensitivity.
For maximum freedom on bonding location, 2 outputs are available for DREF (pads 1
and 3). These are internally connected. Both outputs can be used if necessary. If only one
is used, the other can be left open.
Fig 3.
The PIN diode connected between
the input and pad DREF
Fig 4.
The PIN diode connected between
the input and a negative supply
voltage
001aad077
RDREF
290
C2
470 pF
DREF
I
PIN
IPHOTO
4 or 17
1 or 3
2
TZA3036
V
CC
001aad078
RDREF
290
DREF
negative
bias voltage
I
PIN
IPHOTO
4 or 17
1 or 3
2
TZA3036
V
CC
TZA3036_1
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 24 March 2006
6 of 15
Philips Semiconductors
TZA3036
SDH/SONET STM1/OC3 transimpedance amplifier
7.2 Automatic gain control
The TZA3036 transimpedance amplifier can handle input currents from 0.18
A to 1.5 mA
which is equivalent to a dynamic range of 78 dB (electrical equivalent with 39 dB optical).
At low input currents, the transimpedance must be high to obtain enough output voltage,
and the noise should be low enough to guarantee a minimum bit error rate. At high input
currents however, the transimpedance should be low to prevent excessive distortion at the
output stage. To achieve the dynamic range, the gain of the amplifier depends on the level
of the input signal. This is achieved in the TZA3036 by an AGC loop.
The AGC loop comprises a peak detector and a gain control circuit. The peak detector
detects the amplitude of the signal and stores it in a hold capacitor. The hold capacitor
voltage is compared to a threshold voltage. The AGC is only active when the input signal
level is larger than the threshold level and is inactive when the input signal is smaller than
the threshold level.
When the AGC is inactive, the transimpedance is at its maximum. When the AGC is
active, the feedback resistor value of the transimpedance amplifier is reduced, reducing its
transimpedance, to keep the output voltage constant.
Figure 5
shows the transimpedance
as function of the input current.
To reduce sensitivity to offsets and output loads, the AGC detector senses the output just
before the output buffer.
Figure 6
shows the AGC voltage as function of the input current.
Fig 5.
Transimpedance as function of the PIN diode
current
Fig 6.
AGC voltage as function of the PIN diode
current
001aad079
I
PIN
(
A)
10
-
1
10
4
10
3
1
10
2
10
10
1
10
2
transimpedance
(k
)
10
-
1
001aad080
1.5
2.5
3.5
V
AGC
(V)
0.5
I
PIN
(
A)
10
-
1
10
4
10
3
1
10
2
10
TZA3036_1
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 24 March 2006
7 of 15
Philips Semiconductors
TZA3036
SDH/SONET STM1/OC3 transimpedance amplifier
For applications where the transimpedance is controlled by the TIA it is advised to leave
the AGC pads unconnected to achieve fast attack and decay times.
The AGC function can be overruled by applying a voltage to pad AGC. In this
configuration, connecting pad AGC to ground gives maximum transimpedance and
connecting it to V
CC
gives minimum transimpedance. This is depicted in
Figure 7
. The
AGC voltage should be derived from the V
CC
for proper functioning.
For maximum freedom on bonding location, 2 pads are available for AGC (pads 6 and 15).
These pads are internally connected. Both pads can be used if necessary.
7.3 Monitoring RSSI via IDREF_MON
To facilitate RSSI monitoring in modules (e.g. SFF-8472 compliant SFP modules), a
current output is provided. This output gives a current which is 20 % of the average DREF
current through the 290
bias resistor. By connecting a resistor to the IDREF_MON
output, a voltage proportional with to average input power can be obtained.
The RSSI monitoring is implemented by measuring the voltage over the 290
bias
resistor. This method is preferred over a simple current mirror because at small photo
currents the voltage drop over the resistor is very small. This gives a higher bias voltage
yielding better performance of the photodiode.
For maximum freedom on bonding location, 2 pads are available for IDREF_MON (pads 5
and 16). These pads are internally connected. Both pads can be used if necessary. If only
one is used, the other can be left open.
Fig 7.
Transimpedance as function of the AGC voltage
001aad081
V
AGC
/V
CC
0.2
1.0
0.8
0.4
0.6
10
1
10
2
transimpedance
(k
)
10
-
1
TZA3036_1
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 24 March 2006
8 of 15
Philips Semiconductors
TZA3036
SDH/SONET STM1/OC3 transimpedance amplifier
8.
Limiting values
9.
Characteristics
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
V
CC
supply voltage
-
0.5
+3.8
V
V
n
voltage on any other
pin
pad
IPHOTO
-
0.5
+2.0
V
OUT, OUTQ
-
0.5
V
CC
+ 0.5
V
AGC, IDREF_MON
-
0.5
V
CC
+ 0.5
V
DREF
-
0.5
V
CC
+ 0.5
V
I
n
current on any other
pin
pad
IPHOTO
-
1
+2.5
mA
OUT, OUTQ
-
10
+10
mA
AGC, IDREF_MON
-
0.2
+0.2
mA
DREF
-
4.0
+4.0
mA
P
tot
total power dissipation
-
300
mW
T
amb
ambient temperature
-
40
+85
C
T
j
junction temperature
-
150
C
T
stg
storage temperature
-
65
+150
C
Table 4.
Characteristics
Typical values at T
j
= 25
C and V
CC
= 3.3 V; minimum and maximum values are valid over the entire ambient temperature
range and supply voltage range; all voltages are measured with respect to ground; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V
CC
supply voltage
2.9
3.3
3.6
V
I
CC
supply current
AC-coupled; R
L(dif)
= 100
;
excluding I
DREF
and I
IDREF_MON
-
20
24
mA
P
tot
total power dissipation
-
66
87
mW
T
j
junction temperature
-
40
-
+125
C
T
amb
ambient temperature
-
40
+25
+85
C
R
tr
small-signal
transresistance
measured differentially;
AC-coupled, R
L(dif)
= 100
46
69
98
k
f
-3dB(h)
high frequency
-
3 dB point C
PIN
= 0.7 pF
110
160
-
MHz
I
n(rms)(itg)(tot)
total integrated RMS noise
current over bandwidth
referenced to input;
C
PIN
= 0.7 pF;
f
-3dB(min)
= 110 MHz third-order
Bessel filter
[1]
-
12
16
nA
Automatic gain control loop: pad AGC
t
att
attack time
AGC pad unconnected
-
10
-
s
t
decay
decay time
AGC pad unconnected
-
40
-
s
V
th(AGC)(p-p)
peak-to-peak AGC
threshold voltage
referenced to output;
measured differentially
-
125
-
mV
TZA3036_1
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 24 March 2006
9 of 15
Philips Semiconductors
TZA3036
SDH/SONET STM1/OC3 transimpedance amplifier
[1]
Guaranteed by design.
[2]
The input current range is determined by the allowed Pulse Width Distortion (PWD), which is < 5 % over the whole input current range.
The PWD is defined as:
, where T is the clock period.
Bias voltage: pad DREF
R
(DREF-VCC)
resistance between pin
DREF and pin V
CC
tested at DC level;
T
amb
= 25
C
240
290
330
TC
RDREF
temperature coefficient of
R
DREF
-
0.33
-
/
C
Input: pad IPHOTO
I
IPHOTO(p-p)
peak-to-peak current on
pad IPHOTO
[2]
-
1000 -
+1500
A
V
bias(i)
input bias voltage
-
-
900
mV
Monitor: pad IDREF_MON
V
mon
monitor voltage
[1]
0
-
V
CC
-
0.4 V
I
IDREF_MON
/I
DREF
monitor current ratio
ratio I
IDREF_MON
/ I
DREF
19.5
20
20.5
%
I
offset(mon)
monitor offset current
T
amb
= 25
C
0
10
20
A
TC
I(offset)mon
temperature coefficient of
monitor offset current
-
30
-
nA/
C
Data outputs: pads OUT and OUTQ
V
O(cm)
common mode output
voltage
AC-coupled; R
L(dif)
= 100
-
V
CC
-
1.2 -
V
V
o(dif)(p-p)
peak-to-peak differential
output voltage
AC-coupled; R
L(dif)
= 100
I
PIN
= 0.18
A (p-p)
R
tr
8
12
-
mV
I
PIN
= 20
A (p-p)
-
125
-
mV
I
PIN
= 1100
A (p-p)
-
250
500
mV
R
O(dif)
differential output
resistance
tested at DC level
-
100
-
t
r
rise time
20 % to 80 %;
I
PIN
= 100
A (p-p)
-
800
-
ps
t
f
fall time
80 % to 20 %;
I
PIN
= 100
A (p-p)
-
1000
-
ps
Table 4.
Characteristics
...continued
Typical values at T
j
= 25
C and V
CC
= 3.3 V; minimum and maximum values are valid over the entire ambient temperature
range and supply voltage range; all voltages are measured with respect to ground; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
PWD
pulse width
T
-------------------------------
0.5
(
)
100
%
=
TZA3036_1
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 24 March 2006
10 of 15
Philips Semiconductors
TZA3036
SDH/SONET STM1/OC3 transimpedance amplifier
10. Application information
For maximum freedom on bonding location, 2 outputs are available for OUT and OUTQ.
The outputs should be used in pairs: pad 14 with pad 7 or pad 8 with pad 13. Pad 8 is
internally connected with pad 14, pad 7 is internally connected with pad 13. The device is
guaranteed with only one pair used. The other pair should be left open. Two examples of
the bonding possibilities are shown in
Figure 8
.
Fig 8.
Application diagram highlighting flexible pad layout
C
OUTQ
C
OUT
IDREF_MON
V
CC
PIN
TZA3036U
GND
C
OUT
C
OUTQ
V
CC
IDREF_MON
PIN
TZA3036U
GND
001aad082
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xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxx x x
TZA3036_1
K
oninklijk
e Philips Electronics N.V
. 2006. All r
ights reser
v
ed.
Pr
oduct data sheet
Re
v
.
01 -- 24 Mar
c
h
2006
11 of 15
Philips Semiconductor
s
TZA3036
SDH/SONET STM1/OC3 transimpedance amplifier
11.
T
est inf
ormation
Total impedance of the test circuit (Z
tot(tc)
) is calculated by the equation Z
tot(tc)
= s
21
(R + Z
i
)
2, where s
21
is the insertion loss of ports 1 and 2.
Typical values: R = 2200
, Z
i
= 300
.
Fig 9.
Test circuit
001aad083
55
2200
R
8.2
k
PORT2
Z
o
= 50
Z
o
= 50
Z
o
= 50
PORT1
DC-IN
DATA
CLOCK
GND
OUT
OUTQ
IPHOTO
NETWORK ANALYZER
TZA3036
V
CC
PATTERN
GENERATOR
S-PARAMETER TEST SET
22 nF
22 nF
22 nF
9, 10, 11, 12
4 or 17
8 or 14
7 or 13
2
TRIGGER
INPUT
2
1
SAMPLING OSCILLOSCOPE
TZA3036_1
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 24 March 2006
12 of 15
Philips Semiconductors
TZA3036
SDH/SONET STM1/OC3 transimpedance amplifier
12. Bare die information
13. Package outline
Not applicable.
Origin is center of die.
Fig 10. Bonding pad locations
Table 5.
Physical characteristics of the bare die
Parameter
Value
Glass passivation
0.3
m PSG (PhosphoSilicate Glass) on top of 0.8
m silicon nitride
Bonding pad
dimension
minimum dimension of exposed metallization is 90
m
90
m
(pad size = 100
m
100
m) except pads 2 and 3 which have exposed
metallization of 80
m
80
m (pad size = 90
m
90
m)
Metallization
2.8
m AlCu
Thickness
380
m nominal
Die dimension
820
m
1300
m (
20
m
2
)
Backing
silicon; electrically connected to GND potential through substrate contacts
Attach temperature
< 440
C; recommended die attach is glue
Attach time
< 15 s
4
5
6
(0,0)
X
Y
17
16
15
14
13
12
11
7
8
9
10
001aac627
1
2
3
TZA3036_1
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 24 March 2006
13 of 15
Philips Semiconductors
TZA3036
SDH/SONET STM1/OC3 transimpedance amplifier
14. Handling information
14.1 General
Inputs and outputs are protected against electrostatic discharge in normal handling.
However, to be completely safe you must take normal precautions appropriate to handling
MOS devices; see
JESD625-A and/or IEC61340-5.
14.2 Additional information
Pad IPHOTO has limited protection to ensure good RF performance. This pad should be
handled with extreme care.
15. Abbreviations
16. Revision history
Table 6.
Abbreviations
Acronym
Description
SDH
Synchronous Digital Hierarchy
SONET
Synchronous Optical NETwork
RSSI
Received Signal Strength Indicator
FTTx
Fiber To The "x"
STM1
Synchronous Transport Mode 1 (155.52 Mbit/s)
OC3
Optical Carrier level 3 (155.52 Mbit/s)
PIN
Positive Intrinsic Negative
PSRR
Power Supply Rejection Ratio
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
TZA3036_1
20060324
Product data sheet
-
-
TZA3036_1
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 24 March 2006
14 of 15
Philips Semiconductors
TZA3036
SDH/SONET STM1/OC3 transimpedance amplifier
17. Legal information
17.1
Data sheet status
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term `short data sheet' is explained in section "Definitions".
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL
http://www.semiconductors.philips.com.
17.2
Definitions
Draft -- The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Philips Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet -- A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Philips Semiconductors
sales office. In case of any inconsistency or conflict with the short data sheet,
the full data sheet shall prevail.
17.3
Disclaimers
General -- Information in this document is believed to be accurate and
reliable. However, Philips Semiconductors does not give any representations
or warranties, expressed or implied, as to the accuracy or completeness of
such information and shall have no liability for the consequences of use of
such information.
Right to make changes -- Philips Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use -- Philips Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a Philips Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Philips Semiconductors accepts no liability for inclusion and/or use
of Philips Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is for the customer's own risk.
Applications -- Applications that are described herein for any of these
products are for illustrative purposes only. Philips Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values -- Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale -- Philips Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at
http://www.semiconductors.philips.com/profile/terms
, including those
pertaining to warranty, intellectual property rights infringement and limitation
of liability, unless explicitly otherwise agreed to in writing by Philips
Semiconductors. In case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter will prevail.
No offer to sell or license -- Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Bare die -- All die are tested on compliance with all related technical
specifications as stated in this data sheet up to the point of wafer sawing for a
period of ninety (90) days from the date of delivery by Philips
Semiconductors. If there are data sheet limits not guaranteed, these will be
separately indicated in the data sheet. There are no post-packing tests
performed on individual die or wafers.
Philips Semiconductors has no control of third party procedures in the
sawing, handling, packing or assembly of the die. Accordingly, Philips
Semiconductors assumes no liability for device functionality or performance
of the die or systems after third party sawing, handling, packing or assembly
of the die. It is the responsibility of the customer to test and qualify their
application in which the die is used.
All die sales are conditioned upon and subject to the customer entering into a
written die sale agreement with Philips Semiconductors through its legal
department.
17.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
18. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
Document status
[1][2]
Product status
[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
Philips Semiconductors
TZA3036
SDH/SONET STM1/OC3 transimpedance amplifier
Koninklijke Philips Electronics N.V. 2006.
All rights reserved.
For more information, please visit: http://www.semiconductors.philips.com.
For sales office addresses, email to: sales.addresses@www.semiconductors.philips.com.
Date of release: 24 March 2006
Document identifier: TZA3036_1
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section `Legal information'.
19. Contents
1
General description . . . . . . . . . . . . . . . . . . . . . . 1
2
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
3
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
4
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
5
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 2
6
Pinning information . . . . . . . . . . . . . . . . . . . . . . 3
6.1
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
6.2
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3
7
Functional description . . . . . . . . . . . . . . . . . . . 4
7.1
PIN diode connections . . . . . . . . . . . . . . . . . . . 4
7.2
Automatic gain control . . . . . . . . . . . . . . . . . . . 6
7.3
Monitoring RSSI via IDREF_MON . . . . . . . . . . 7
8
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 8
9
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 8
10
Application information. . . . . . . . . . . . . . . . . . 10
11
Test information . . . . . . . . . . . . . . . . . . . . . . . . 11
12
Bare die information . . . . . . . . . . . . . . . . . . . . 12
13
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12
14
Handling information. . . . . . . . . . . . . . . . . . . . 13
14.1
General . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
14.2
Additional information . . . . . . . . . . . . . . . . . . . 13
15
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 13
16
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13
17
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
17.1
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
17.2
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
17.3
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
17.4
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
18
Contact information. . . . . . . . . . . . . . . . . . . . . 14
19
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15