2002 Aug 13

Philips Semiconductors

Product specification

Gigabit Ethernet/Fibre Channel laser
drivers

TZA3041AHL; TZA3041BHL;

TZA3041U

FEATURES

1.2 Gbits/s data input, both Current Mode Logic (CML)
and Positive Emitter Coupled Logic (PECL) compatible;
maximum 800 mV (p-p)

Adaptive laser output control with dual loop, stabilizing
optical 1 and 0 levels

Optional external control of laser modulation and biasing
currents (non-adaptive)

Automatic laser shutdown

Few external components required

Rise and fall times of 120 ps (typical value)

Jitter <50 mUI (p-p)

RF output current sinking capability of 60 mA

Bias current sinking capability of 90 mA

Power dissipation of 430 mW (typical value)

Low cost LQFP32 5

5 plastic package

Single 5 V power supply.

TZA3041AHL

Laser alarm output for signalling extremely low and high
bias current conditions.

TZA3041BHL

Extra 1.2 Gbits/s loop mode input; both CML and PECL
compatible.

TZA3041U

Bare die version with combined bias alarm and loop
mode functionality.

APPLICATIONS

Gigabit Ethernet/Fibre Channel optical transmission
systems

Gigabit Ethernet/Fibre Channel optical laser modules.

GENERAL DESCRIPTION

The TZA3041AHL, TZA3041BHL and TZA3041U are fully
integrated laser drivers for Gigabit Ethernet/Fibre Channel
(1.2 Gbits/s) systems, incorporating the RF path between
the data multiplexer and the laser diode. Since the dual
loop bias and modulation control circuits are integrated on
the IC, the external component count is low. Only
decoupling capacitors and adjustment resistors are
required.

The TZA3041AHL features an alarm function for signalling
extreme bias current conditions. The alarm low and high
threshold levels can be adjusted to suit the application
using only a resistor or a current Digital-to-Analog
Converter (DAC).

The TZA3041BHL is provided with an additional RF data
input to allow remote system testing (loop mode).

The TZA3041U is a bare die version for use in compact
laser module designs. The die contains 40 pads and
features the combined functionality of the TZA3041AHL
and the TZA3041BHL.

ORDERING INFORMATION

TYPE

NUMBER

PACKAGE

NAME

DESCRIPTION

VERSION

TZA3041AHL

LQFP32

plastic low profile quad flat package; 32 leads; body 5

1.4 mm

SOT401-1

TZA3041BHL

TZA3041U

bare die; 2000

2000

380

2002 Aug 13

Philips Semiconductors

Product specification

Gigabit Ethernet/Fibre Channel laser
drivers

TZA3041AHL; TZA3041BHL;

TZA3041U

BLOCK DIAGRAM

handbook, full pagewidth

LASER

CONTROL

BLOCK

BAND GAP

REFERENCE

data input

(differential)

TZA3041AHL

CURRENT

SWITCH

ALARMHI

TZERO

DIN

MONIN

ALARMLO

TONE

ALARM

ONE

ZERO

DINQ

LAQ

BIAS

BGAP

MBK874

ALS

VCC(B)

GND

1, 3, 8, 9,
11, 14, 16, 17
24, 25, 32

VCC(G)

VCC(R)

19, 20
27, 30

Fig.1 Block diagram of TZA3041AHL.

handbook, full pagewidth

MBK873

LASER

CONTROL

BLOCK

BAND GAP

REFERENCE

TZA3041BHL

CURRENT

SWITCH

MUX

TZERO

ALS

DLOOP

MONIN

VCC(B)

GND

1, 3, 8, 9,
11, 14, 16, 17
24, 25, 32

VCC(G)

ENL

TONE

ONE

ZERO

DLOOPQ

DIN

DINQ

LAQ

BIAS

BGAP

VCC(R)

18, 21
27, 30

Fig.2 Block diagram of TZA3041BHL.

2002 Aug 13

Philips Semiconductors

Product specification

Gigabit Ethernet/Fibre Channel laser
drivers

TZA3041AHL; TZA3041BHL;

TZA3041U

PINNING

SYMBOL

PIN

PAD

DESCRIPTION

TZA3041AHL TZA3041BHL

TZA3041U

GND

ground

MONIN

monitor photodiode current input

GND

ground

IGM

not connected

TONE

connection for external capacitor used for setting
optical 1 control loop time constant (optional)

TZERO

connection for external capacitor used for setting
optical 0 control loop time constant (optional)

BGAP

connection for external band gap decoupling
capacitor

CC(G)

supply voltage (green domain); note 1

CC(G)

supply voltage (green domain); note 1

GND

ground

GND

ground

CC(B)

supply voltage (blue domain); note 2

CC(B)

supply voltage (blue domain); note 2

GND

ground

LAQ

laser modulation output inverted

laser modulation output

GND

ground

BIAS

laser bias current output

GND

ground

GND

ground

GND

ground

ALARMHI

maximum bias current alarm reference level input

CC(R)

supply voltage (red domain); note 3

CC(R)

supply voltage (red domain); note 3

DLOOP

loop mode data input

CC(R)

supply voltage (red domain); note 3

DLOOPQ

loop mode data input inverted

CC(R)

supply voltage (red domain); note 3

ALARMLO

minimum bias current alarm reference level input

CC(R)

supply voltage (red domain); note 3

ONE

optical 1 reference level input

ZERO

optical 0 reference level input

GND

ground

GND

ground

ALARM

alarm output

ENL

loop mode enable input

2002 Aug 13

Philips Semiconductors

Product specification

Gigabit Ethernet/Fibre Channel laser
drivers

TZA3041AHL; TZA3041BHL;

TZA3041U

Notes

1. Supply voltage for the Monitor PhotoDiode (MPD) input current.

2. Supply voltage for the laser modulation outputs (LA, LAQ).

3. Supply voltage for the data inputs (DIN, DINQ), optical 1 and 0 reference level inputs (ONE, ZERO), and the bias

current alarm reference level inputs (ALARMHI, ALARMLO).

CC(R)

supply voltage (red domain); note 3

DIN

data input

DINQ

data input inverted

CC(R)

supply voltage (red domain); note 3

ALS

automatic laser shutdown input

GND

ground

GND

ground

SYMBOL

PIN

PAD

DESCRIPTION

TZA3041AHL TZA3041BHL

TZA3041U

handbook, full pagewidth

TZA3041AHL

MBK870

GND

MONIN

GND

TONE

TZERO

BGAP

VCC(G)

GND

CC(B)

GND

LAQ

GND

BIAS

GND

ALARMHI

VCC(R)

ONE

ALARMLO

ZERO

VCC(R)

GND

DIN

DINQ

CC(R)

ALS

GND

ALARM

CC(R)

Fig.3 Pin configuration of TZA3041AHL.

2002 Aug 13

Philips Semiconductors

Product specification

Gigabit Ethernet/Fibre Channel laser
drivers

TZA3041AHL; TZA3041BHL;

TZA3041U

handbook, full pagewidth

TZA3041BHL

MBK875

GND

MONIN

GND

TONE

TZERO

BGAP

VCC(G)

GND

CC(B)

GND

LAQ

GND

BIAS

GND

VCC(R)

DLOOPQ

ONE

VCC(R)

ZERO

DLOOP

GND

DIN

DINQ

CC(R)

ALS

GND

ENL

CC(R)

Fig.4 Pin configuration of TZA3041BHL.

FUNCTIONAL DESCRIPTION

The TZA3041AHL, TZA3041BHL and TZA3041U laser
drivers accept a 1.2 Gbits/s Non-Return to Zero (NRZ)
input data stream, and generate an output signal with
sufficient current to drive a solid state Fabry Perot (FP) or
Distributed FeedBack (DFB) laser. They also contain dual
loop control circuitry for stabilizing the true laser optical
power levels representing logic 1 and logic 0.

The input buffers present a high impedance to the data
stream on the differential inputs (pins DIN and DINQ);
see Fig.5. The input signal can be at a CML level of
approximately 200 mV (p-p) below the supply voltage, or
at a PECL level up to 800 mV (p-p). The inputs can be
configured to accept CML signals by connecting pins DIN
and DINQ to V

CC(R)

via external 50

pull-up resistors.

If PECL compatibility is required, the usual Thevenin
termination can be applied.

handbook, full pagewidth

MGS910

10 k

DINQ, DLOOPQ

DIN, DLOOP

100

GND

VCC(R)

100

Fig.5 DIN/DINQ and DLOOP/DLOOPQ inputs.

2002 Aug 13

Philips Semiconductors

Product specification

Gigabit Ethernet/Fibre Channel laser
drivers

TZA3041AHL; TZA3041BHL;

TZA3041U

For ECL signals (negative and referenced to ground), the
inputs should be AC-coupled to the signal source.
If AC-coupling is applied, a constant input signal (either
LOW or HIGH) will cause the device to be in an undefined
state. To avoid this, it is recommended to apply a slight
offset to the input stage. The applied offset must be higher
than the specified value in Chapter "Characteristics", but
much lower than the applied input voltage swing.

The RF path is fully differential and contains a differential
preamplifier and a main amplifier. The main amplifier is
able to operate at the large peak currents required at the
output laser driver stage and is insensitive to supply
voltage variations. The output signal from the main
amplifier drives a current switch which supplies a
guaranteed maximum modulation current of 60 mA to
pins LA and LAQ (see Fig.6). The BIAS pin outputs a
guaranteed maximum DC bias current of up to 90 mA for
adjusting the optical laser output to a level above its light
emitting threshold (see Fig.7).

Automatic laser control

A laser with a Monitor PhotoDiode (MPD) is required for
the laser control circuit (see application diagrams
Figs 18 and 19).

The MPD current is proportional to the laser emission and
is applied to pin MONIN. The MPD current range is
100 to 1000

A (p-p). The input buffer is optimized to cope

with an MPD capacitance of up to 50 pF. To prevent the
input buffer from oscillating if the MPD capacitance is low,
the capacitance should be increased to the minimum value
specified in Chapter "Characteristics", by connecting a
capacitor between pin MONIN and V

CC(G)

DC reference currents are applied to pins ONE and ZERO
to set the MPD reference levels for laser HIGH and laser
LOW respectively. This is adequately achieved by using
resistors to connect V

CC(R)

to pins ONE and ZERO

(see Fig.8), however, current DACs can also be used. The
voltages on pins ONE and ZERO are held at a constant
level of 1.5 V below V

CC(R)

. The reference current applied

to pin ONE is internally multiplied by 16 and the reference
current flowing into pin ZERO is internally multiplied by 4.
The accuracy of the V

CC(R)

1.5 V voltage at pins ONE

and ZERO is described in Section "Accuracy of voltage on
inputs: ONE, ZERO, ALARMLO, ALARMHI".

handbook, halfpage

MGS906

GND

LAQ

ALS

TRn

Fig.6 LA and LAQ outputs.

handbook, halfpage

MGS907

GND

BIAS

ALS

TRn

Fig.7 Laser driver bias current output circuit.

handbook, halfpage

MGS908

VCC(R)

GND

ONE, ZERO, ALARMLO, ALARMHI

30 k

Fig.8

ONE, ZERO, ALARMLO and ALARMHI
inputs.

2002 Aug 13

Philips Semiconductors

Product specification

Gigabit Ethernet/Fibre Channel laser
drivers

TZA3041AHL; TZA3041BHL;

TZA3041U

The reference current and the resistor for the optical 1
modulation current control loop is calculated using the
following formulae:

(1)

(2)

The reference current and resistor for the optical 0 bias
current control loop is calculated using the following
formulae:

(3)

(4)

In these formulae, I

MPD(ONE)

and I

MPD(ZERO)

represent the

MPD current during an optical 1 and an optical 0 period,
respectively.

XAMPLE

A laser operates at optical output power levels of 0.3 mW
for laser HIGH and 0.03 mW for laser LOW (extinction ratio
of 10 dB). Suppose the corresponding MPD currents for
this particular laser are 260 and 30

A, respectively.

In this example, the reference current flowing into
pin ONE is:

This current can be set using a current source or simply by
a resistor of the appropriate value connected between
pin ONE and V

CC(R)

In this example, the resistor is:

In this example, the reference current at pin ZERO is:

and can be set using a resistor:

It should be noted that the MPD current is stabilized rather
than the actual laser optical output power. Any deviations
between optical output power and MPD current, known as
`tracking errors', cannot be corrected.

Designing the modulation and bias current control
loop

The optical 1 and 0 current control loop time constants are
determined by on-chip capacitances. If the resulting time
constants are found to be too small in a specific
application, they can be increased by connecting a
capacitor between pins TZERO and TONE.

The optical 1 modulation current control loop time
constant (

) and bandwidth (B) can be estimated using the

following formulae:

(5)

(6)

The optical 0 bias current control loop time constant and
bandwidth can be estimated using the following formulae:

(7)

(8)

The term

LASER

(dimensionless) in the above formulae is

the product of the following two terms:

is the electro-optical efficiency which accounts for

the steepness of the laser slope characteristic. It defines
the rate at which the optical output power increases with
modulation current, and is measured in W/A.

R is the MPD responsivity. It determines the amount of
MPD current for a given value of optical output power,
and is measured in A/W.

XAMPLE

A laser with an MPD has the following specifications:
P

= 1 mW, I

= 25 mA,

= 30 mW/A, R = 500 mA/W.

The term I

is the required threshold current to switch on

the laser. If the laser operates just above the threshold
level, it may be assumed that

near the optical 0 level

is 50% of

near the optical 1 level, due to the slope

decreasing near the threshold level.

ref ONE

(

)

------

MPD(ONE)

[ ]

ONE

1.5

ONE

-----------

MPD(ONE)

------------------------

[ ]

ref ZERO

(

)

1
4

---

MPD(ZERO)

[ ]

ZERO

1.5

ZERO

--------------

MPD(ZERO)

---------------------------

[ ]

ref ONE

(

)

------

260

16.25

ONE

1.5

16.25

---------------------------------

92.3 k

ref ZERO

(

)

1
4

---

7.5

ZERO

1.5

7.5

--------------------------

200 k

ONE

TONE

(

)

LASER

----------------------

[ ]

ONE

--------------------------

[

]

ONE

LASER

TONE

(

)

-------------------------------------------------------------------------------------------------

[

]

ZERO

TZERO

(

)

LASER

----------------------

[ ]

ZERO

----------------------------

[

]

ZERO

LASER

TZERO

(

)

----------------------------------------------------------------------------------------------------

[

]

2002 Aug 13

Philips Semiconductors

Product specification

Gigabit Ethernet/Fibre Channel laser
drivers

TZA3041AHL; TZA3041BHL;

TZA3041U

In this example, the resulting bandwidth for the optical 1
modulation current control loop, without an external
capacitor, is:

The resulting bandwidth for the optical 0 bias current
control loop, without an external capacitor, is:

It is not necessary to add additional capacitance with this
type of laser.

Control loop data pattern and bit rate dependency

The constants in equations (1) and (3) are valid when the
data pattern frequently contains a sufficient number of
`constant zeroes' and `constant ones'. A single control loop
time period (

ONE

and

ZERO

) must contain ones and zeros

for at least approximately 6 ns. When using the IC in
1.2 Gbits/s applications, the optical extinction ratio will be
slightly higher when compared with slower line rates.
Therefore, it is important to use the actual data patterns
and bit rate of the final application circuit for adjusting the
optical levels.

The laser driver peak detectors are able to track MPD
output current overshoot and undershoot conditions.
Unfortunately, these conditions affect the ability of the IC
to correctly interpret the high and low level MPD current.
In particular, the occurrence of undershoot can have a
markedly adverse effect on the interpretation of the low
level MPD current.

Additional bias by modulation `off' current

Although during operation, the full modulation current
switches between outputs LA and LAQ, a small amount of
modulation current continues to flow through the inactive
pin.

For example, when the laser, whose cathode is connected
to LA, is in the `dark' part of its operating cycle (logic 0),
some of the modulation `off' current flows through LA while
most of the current flows through LAQ. This value
I

o(mod)(off)

is effectively added to the bias current and is

subtracted from the modulation current. Fortunately, the
value correlates closely with the magnitude of the
modulation current. Therefore, applications requiring low
bias and low modulation are less affected. Figure 9 shows
the modulation `off' current as a function of the modulation
`on' current.

Monitoring the bias and modulation current

Although not recommended, the bias and modulation
currents generated by the laser driver can be monitored by
measuring the voltages on pins TZERO and TONE,
respectively (see Fig.10). The relationship between these
voltages and the corresponding currents are given as
transconductance values and are specified in
Chapter "Characteristics". The voltages on pins TZERO
and TONE range from 1.4 to 3.4 V. Any connection to
these pins should have a very high impedance value. It is
mandatory to use a CMOS buffer or an amplifier with an
input impedance higher than 100 G

and with an

extremely low input leakage current (pA).

ONE

500

---------------------------------------------------------------------

750 Hz

ZERO

0.5

500

-------------------------------------------------------------------------

600 Hz

handbook, halfpage

MGS902

Io(mod)(on) (mA)

(2)

(1)

Io(mod)(off)

(mA)

Fig.9 I

o(mod)(off)

as a function of I

o(mod)(on)

(1) Worst case operation (T

= 125

C, V

= 5.5 V

and worst case parameter processes).

(2) Typical operation.

2002 Aug 13

Philips Semiconductors

Product specification

Gigabit Ethernet/Fibre Channel laser
drivers

TZA3041AHL; TZA3041BHL;

TZA3041U

Automatic laser shut-down and laser slow start

The laser modulation and bias currents can be rapidly
switched off when a HIGH level (CMOS) is applied to
pin ALS. This function allows the circuit to be shut-down in
the event of an optical system malfunction. A 25 k

pull-down resistor defaults pin ALS to the non active state
(see Fig.11).

When a LOW level is applied to pin ALS, the modulation
and bias currents slowly increase to the desired values at
the typical time constants of

ONE

and

ZERO

, respectively.

This can be used to slow-start the laser.

Manual laser override

The automatic laser control function can be overridden by
connecting voltage sources to pins TZERO and TONE to
take direct control of the current sources for bias and
modulation respectively. The control voltages should
range from 1.4 to 3.4 V to swing the modulation current
over the range 1 to 60 mA and the bias current over the
range 1 to 90 mA. These current ranges are guaranteed.

Due to the tolerance range in the manufacturing process,
some devices may have higher current values than those
specified, as shown in Figs 12 and 13. Both figures show
that temperature changes cause a slight tilting of the linear
characteristic around an input voltage of 2.4 V.
Consequently, the manually controlled current level is
most insensitive to temperature variations at around this
value. Bias and modulation currents in excess of the
specified range are not supported and should be avoided.

Currents into or out of pins TZERO and TONE in excess of
10

A must be avoided to prevent damage to the circuit.

handbook, halfpage

MGS905

GND

40 pF

1 nA

LINEAR VOLTAGE TO

CURRENT CONVERTER

TZERO, TONE

2.4 V

1 nA

Fig.10 TZERO and TONE internal configuration.

handbook, halfpage

MGS911

25 k

VCC(R)

100

GND

ALS

100

Fig.11 ALS input.

2002 Aug 13

Philips Semiconductors

Product specification

Gigabit Ethernet/Fibre Channel laser
drivers

TZA3041AHL; TZA3041BHL;

TZA3041U

Bias alarm for TZA3041AHL

The bias current alarm circuit detects whenever the bias
current is outside a predefined range, and generates a
flag. This feature can detect excessive bias current due to
laser ageing or laser malfunctioning. The current applied
to pin ALARMHI should be the maximum permitted bias
current value attenuated by a ratio of 1:1500. The current
applied to pin ALARMLO should be the minimum
permitted bias current value attenuated by a ratio of 1:300.

Like the reference currents for the laser current control
loop, the alarm reference currents can be set by
connecting external resistors between V

CC(R)

and

pins ALARMHI and ALARMLO (see Fig.8). The resistor
values can be calculated using the following formulae:

(9)

(10)

Example: The following reference currents are required to
limit the bias current range from 6 to 90 mA:

and

The corresponding resistor values are:

and

If the alarm condition is true, the voltage on pin ALARM
(see Fig.14) goes to a HIGH level (CMOS). This signal
could be used, for example, to drive pin ALS to disable the
laser driver; the signal to pin ALS has to be latched to
prevent oscillation.

A hysteresis of approximately 10% is applied to both alarm
functions. The attenuation ratios of 1:300 and 1:1500 are
valid if the bias current rises above the reference current
levels. If the bias current decreases, the ratios are 10%
lower.

Accuracy of voltage on inputs: ONE, ZERO,
ALARMLO, ALARMHI

It is important to consider the accuracy of the 1.5 V level
with respect to V

CC(R)

on pins ONE and ZERO if resistors

are used to set the reference currents. Although this value
is independent of V

CC(R)

, deviations from 1.5 V can be

caused by:

Input current: At T

= 25

C, the voltage between pin and

varies from 1.58 V at an input current of 6

A, down

to 1.45 V at 65

A and 1.41 V at 100

A. The range

between 65

A and 100

A is only specified for

ALARMLO. In the application, the input current is
virtually fixed, so this variation has little effect.

Variation in batch and individual device characteristics,
not exceeding

2% from the nominal product: This

variation can be compensated for where devices in the
application are individually trimmed.

Temperature: The variation in T

is shown in Fig.15.

At 30

A (middle of the specified range) the total

variation in T

is <1%, at 65

A it is <2% and at 6

A it is

<3%.

ALARMHI

1.5

1500

O BIAS

(

)

max

(

)

---------------------------------

[ ]

ALARMLO

1.5

300

O BIAS

(

)

min

(

)

--------------------------------

[ ]

ALARMLO

300

---------------------

ALARMHI

1500

------------------------

ALARMHI

1.5

1500

----------------------------

25 k

ALARMLO

1.5

300

------------------------

75 k

handbook, halfpage

MGS909

VCC(R)

GND

ALARM

Fig.14 ALARM output.

2002 Aug 13

Philips Semiconductors

Product specification

Gigabit Ethernet/Fibre Channel laser
drivers

TZA3041AHL; TZA3041BHL;

TZA3041U

Loop mode for TZA3041BHL

The loop mode allows the total system application to be
tested. It allows for uninhibited optical transmission
through the fibre front-end (from the MPD through the
transimpedance stage and the data and clock recovery
unit, to the laser driver and via the laser back to the fibre).
Note that the optical receiver used in conjunction with the
TZA3041BHL must have a loop mode output in order to
complete the test loop.

The loop mode is selected by a HIGH level on pin ENL.
By default, pin ENL is pulled to a LOW level by a 25 k

pull-down resistor (see Fig.16).

Power supply connections

Refer to application diagrams Figs 18 and 19. Three
separate supply domains (labelled V

CC(G)

, V

CC(B)

, and

CC(R)

) provide isolation between the MPD current input,

the high-current outputs, and the PECL or CML inputs.
Each supply domain should be connected to a central V

via separate filters as shown in Figs 18 and 19. All supply
pins must be connected. The voltage supply levels
should be equal to, and in accordance with, the values
specified in Chapter "Characteristics".

To maximize power supply isolation, the cathode of the
MPD should be connected to V

CC(G)

and the anode of the

laser diode should be connected to V

CC(B)

. It is

recommended that the laser diode anode is also
connected to a separate decoupling capacitor C9.

Generally, the inverted laser modulation output (pin LAQ)
is not used. To correctly balance the output stage, an
equalization network (Z1) with an impedance comparable
to the laser diode is connected between pin LAQ and
V

CC(B)

All external components should be surface mounted
devices, preferably of size 0603 or smaller.
The components must be mounted as close to the IC as
possible.

It is especially recommended to mount the following
components very close to the IC:

Power supply decoupling capacitors C2, C3 and C4

Input matching network on pins DIN, DINQ, DLOOP and
DLOOPQ

Capacitor C5 on pin MONIN

Output matching network Z1 at the unused output

The laser.

Bare die ground

In addition to the separate V

domains, the bare die

contains three corresponding ground (GND) domains.
Isolation between the GND domains is limited due to the
finite substrate conductance.

Mount the die preferably on a large and highly conductive
grounded die pad. All GND pads must be bonded to the
die pad. The external ground is thus ideally combined with
the die ground to avoid ground bounce problems.

Layout recommendations

Layout recommendations for the TZA3041AHL and
TZA3041BHL can be found in application note

"AN98090

Fiber optic transceiverboard STM1/4/8, OC3,12,24,
FC/GE".

handbook, halfpage

MGS912

25 k

VCC(R)

GND

ENL

600

Fig.16 ENL input.

2002 Aug 13

Philips Semiconductors

Product specification

Gigabit Ethernet/Fibre Channel laser
drivers

TZA3041AHL; TZA3041BHL;

TZA3041U

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MIN.

MAX.

UNIT

supply voltage

0.5

DC voltage on

pin MONIN

1.3

+ 0.5

pins TONE and TZERO

0.5

+ 0.5

pin BGAP

0.5

+3.2

pin BIAS

0.5

+ 0.5

pins LA and LAQ

1.3

+ 0.5

pin ALS

0.5

+ 0.5

pins ONE and ZERO

0.5

+ 0.5

pins DIN and DINQ

0.5

+ 0.5

pin ALARM (TZA3041AHL)

0.5

+ 0.5

pins ALARMHI and ALARMLO (TZA3041AHL)

0.5

+ 0.5

pins DLOOP and DLOOPQ (TZA3041BHL)

0.5

+ 0.5

pin ENL (TZA3041BHL)

0.5

+ 0.5

DC current on

pin MONIN

0.5

+2.5

pins TONE and TZERO

0.5

+0.5

pin BGAP

2.0

+2.5

pin BIAS

0.5

+200

pins LA and LAQ

0.5

+100

pin ALS

0.5

+0.5

pins ONE and ZERO

0.5

+0.5

pins DIN and DINQ

0.5

+0.5

pin ALARM (TZA3041AHL)

0.5

+10

pins ALARMHI and ALARMLO (TZA3041AHL)

0.5

+0.5

pins DLOOP and DLOOPQ (TZA3041BHL)

0.5

+0.5

pin ENL (TZA3041BHL)

0.5

+0.5

amb

ambient temperature

+85

junction temperature

+125

stg

storage temperature

+150

SYMBOL

PARAMETER

VALUE

UNIT

th(j-s)

thermal resistance from junction to solder point

K/W

th(j-c)

thermal resistance from junction to case

K/W

2002 Aug 13

Philips Semiconductors

Product specification

Gigabit Ethernet/Fibre Channel laser
drivers

TZA3041AHL; TZA3041BHL;

TZA3041U

CHARACTERISTICS
V

= 4.5 to 5.5 V; T

amb

40 to +85

C; all voltages measured with respect to GND.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Supplies

supply voltage

4.5

5.0

5.5

CC(R)

supply current (R)

CC(G)

supply current (G)

CC(B)

supply current (B)

ALS LOW; note 1

ALS HIGH

CC(tot)

total supply current

ALS LOW; note 1

101

ALS HIGH

tot

total power dissipation

ALS LOW; note 2

145

430

925

ALS HIGH; note 2

125

225

Data inputs: pins DIN and DINQ (and pins DLOOP and DLOOPQ on TZA3041BHL); see Fig.17

i(p-p)

input voltage
(peak-to-peak value)

single-ended

100

250

800

input offset voltage

+25

I(min)

minimum input voltage

CC(R)

I(max)

maximum input voltage

CC(R)

+ 0.25 V

input impedance

for low frequencies;
single-ended

CMOS inputs: pin ALS (and pin ENL on TZA3041BHL)

LOW-level input voltage

HIGH-level input voltage

pd(ALS)

internal pull-down
resistance on pin ALS

25.5

pd(ENL)

internal pull-down
resistance on pin ENL

CMOS output: pin ALARM (on TZA3041AHL)

LOW-level output voltage

200

0.2

HIGH-level output voltage

= 200

0.2

Monitor photodiode input: pin MONIN

DC input voltage

1.2

1.8

2.4

MPD

monitor photodiode
current

laser optical 0

260

laser optical 1

1040

MPD

monitor photodiode
capacitance

note 3

2002 Aug 13

Philips Semiconductors

Product specification

Gigabit Ethernet/Fibre Channel laser
drivers

TZA3041AHL; TZA3041BHL;

TZA3041U

Control loop reference current inputs: pins ONE and ZERO

ref(ONE)

reference current on
pin ONE

note 4

ref(ONE)

reference voltage on
pin ONE

referenced to V

CC(R)

;

note 5

1.5

(ONE)

attenuation ratio of I

ref(ONE)

to I

MPD(ONE)

note 6

ref(ZERO)

reference current on
pin ZERO

note 4

ref(ZERO)

reference voltage on
pin ZERO

referenced to V

CC(R)

;

note 5

1.5

(ZERO)

attenuation ratio of
I

ref(ZERO)

to I

MPD(ZERO)

note 6

Control loop time constants: pins TONE and TZERO

TONE

voltage on pin TONE

floating output

1.4

3.4

m(TONE)

transconductance of
pin TONE

note 7

130

mA/V

TZERO

voltage on pin TZERO

floating output

1.4

3.4

m(TZERO)

transconductance of
pin TZERO

note 8

100

145

190

mA/V

Laser modulation current outputs: pins LA and LAQ

o(mod)(on)

modulation output current
(active pin)

note 9

2.5

o(mod)(off)

modulation output current
(inactive pin)

o(mod)(on)

= 30mA

0.5

o(mod)(on)

= 60mA

2.8

o(mod)(ALS)

output current during laser
shutdown

output voltage

current rise time

note 10

120

200

current fall time

note 10

120

200

o(p-p)

intrinsic electrical output
jitter (peak-to-peak value)

note 11

mUI

Laser bias current output: pin BIAS

O(BIAS)

bias output current

note 12

2.8

O(BIAS)(ALS)

output current during laser
shutdown

res(off)

response time after laser
shutdown

O(BIAS)

= 90 mA; note 13

O(BIAS)

bias output voltage

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

2002 Aug 13

Philips Semiconductors

Product specification

Gigabit Ethernet/Fibre Channel laser
drivers

TZA3041AHL; TZA3041BHL;

TZA3041U

Notes

1. Supply current:

a) The values do not include the modulation and bias currents through pins LA, LAQ and BIAS.

b) Minimum value refers to V

TONE

= 1.4 V at I

o(mod)(min)

and V

TZERO

= 1.4 V at I

O(BIAS)(min)

c) Maximum value refers to V

TONE

= 3.4 V at I

o(mod)(max)

and V

TZERO

= 3.4 V at I

O(BIAS)(max)

d) A first order estimate of the typical value of I

CC(tot)

as a function of T

, I

o(mod)

, and I

O(BIAS)

is:

CC(tot)

2. Power dissipation:

a) The value for P

tot

includes the modulation and bias currents through pins LA, LAQ and BIAS.

b) The minimum value for P

tot

is the on-chip dissipation when V

TONE

= 1.4 V at I

o(mod)(min)

, V

= V

LAQ

= 2 V,

TZERO

= 1.4 V at I

O(BIAS)(min)

, V

O(BIAS)

= 1 V, and parameter processes are at a minimum.

c) The maximum value for P

tot

is the on-chip dissipation when V

TONE

= 3.4 V at I

o(mod)(max)

, V

= V

LAQ

= 2 V,

TZERO

= 3.4 V at I

O(BIAS)(max)

, V

O(BIAS)

= 1 V, and parameter processes are at a maximum.

d) P

tot

= I

CC(tot)

+ I

O(BIAS)

+ I

with I

o(mod)(on)

flowing through pin LA.

3. The minimum value of the capacitance on pin MONIN is required to prevent instability.

4. The reference currents can be set by connecting external resistors between V

and pins ONE and ZERO

(see Section "Automatic laser control"). The corresponding MPD current range for optical 1 is from 96 to 1040

The MPD current range for optical 0 is from 24 to 260

5. See Section "Accuracy of voltage on inputs: ONE, ZERO, ALARMLO, ALARMHI".

6. See Section "Automatic laser control".

7. The specified transconductance is the ratio between the modulation current on pins LA or LAQ and the voltage on

pin TONE, under small signal conditions.

Alarm reference current inputs: pins ALARMHI and ALARMLO (TZA3041AHL)

ref(ALARMLO)

reference current on
pin ALARMLO

note 14

100

ref(ALARMLO)

reference voltage on
pin ALARMLO

referenced to V

CC(R)

1.5

(ALARMLO)

attenuation ratio of
I

ref(ALARMLO)

to I

O(BIAS)(min)

note 15

200

315

400

O(BIAS)(min)(hys)

minimum bias current
detection hysteresis

7.5

ref(ALARMHI)

reference current on
pin ALARMHI

note 14

ref(ALARMHI)

reference voltage on
pin ALARMHI

referenced to V

CC(R)

1.5

(ALARMHI)

attenuation ratio of
I

ref(ALARMHI)

to I

O(BIAS)(max)

note 15

1300

1600

1800

O(BIAS)(max)(hys)

maximum bias current
detection hysteresis

7.5

Reference voltage output: pin BGAP

output voltage

1.165

1.20

1.235

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

55.6 mA

0.0015

O BIAS

(

)

[

]

o mod

(

)

(

)

[

]

0.026

[

]

-----------------

2002 Aug 13

Philips Semiconductors

Product specification

Gigabit Ethernet/Fibre Channel laser
drivers

TZA3041AHL; TZA3041BHL;

TZA3041U

8. The specified transconductance is the ratio between the bias current on pin BIAS and the voltage on pin TZERO,

under small signal conditions.

9. These are the guaranteed values; the lowest attainable output current will always be lower than 2.5 mA, and the

highest output current will always be higher than 60 mA.

10. The voltage rise and fall times (20% to 80%) can have larger values due to capacitive effects. Specifications are

guaranteed by design and characterization. Each device is tested at full operating speed to guarantee RF
functionality.

11. Measured according to IEEE 802.3z and ANSI X3.230. The electrically generated (current) jitter is assumed to be

less than 50% of the optical output jitter. The specification is guaranteed by design.

12. These are the guaranteed values; the lowest output current will always be less than 2.8 mA and the highest output

current will always be more than 90 mA.

13. The response time is defined as the delay between the onset of the ramp on pin ALS (at 10% of the HIGH level) and

the extinction of the bias current (at 10% of the original value).

14. The reference currents can be set by connecting a resistor between pin ALARMLO and V

CC(R)

and between

pin ALARMHI and V

CC(R)

; for detailed information, see Section "Bias alarm for TZA3041AHL". The corresponding

low-bias threshold range is 1.8 to 19.5 mA. The high-bias threshold range is 9 to 97.5 mA.

15. See Section "Bias alarm for TZA3041AHL".

handbook, full pagewidth

MGK274

VIO

VI(max)

VI(min)

Vi(p-p)

VCC(R)

Fig.17 Logic level symbol definitions for data inputs.

2002 Aug 13

Philips Semiconductors

Product specification

Gigabit Ethernet/Fibre Channel laser
drivers

TZA3041AHL; TZA3041BHL;

TZA3041U

APPLICATION INFORMATION

handbook, full pagewidth

MBK877

R5
18

TZA3041AHL

VCC(R)

TONE

MONIN

(3)

TZERO

(4)

BGAP

22 nF

1, 3, 8, 9, 11,

14, 16, 17,

24, 25, 32

GND

BIAS

LAQ

19, 20,

27, 30

VCC(B)

VCC(G)

ALS

DINQ

DIN

ALARM

(5)

(6)

data inputs

normal mode

(CML/PECL compatible)

ALARMHI

laser

MPD

ALARMLO

(7)

(2)

ONE

ZERO

C2
22 nF

VCC

C3
22 nF

C4
22 nF

(1)

Fig.18 Application diagram with the TZA3041AHL configured for 1.2 Gbits/s (Gigabit Ethernet/Fibre Channel).

(1) Ferrite bead e.g. Murata BLM31A601S.

(2) C5 is required to meet the minimum capacitance value on pin MONIN (optional, see Section "Automatic laser control").

(3) C6 enhances modulation control loop time constant (optional).

(4) C7 enhances bias control loop time constant (optional).

(5) R1 and R2 are used for setting optical 0 and optical 1 reference currents (see Section "Automatic laser control").

(6) R3 and R4 are used for setting minimum and maximum bias currents (see Section "Bias alarm for TZA3041AHL").

(7) Z1 is required for balancing the output stage (see Section "Power supply connections").

2002 Aug 13

Philips Semiconductors

Product specification

Gigabit Ethernet/Fibre Channel laser
drivers

TZA3041AHL; TZA3041BHL;

TZA3041U

handbook, full pagewidth

MBK876

R3
18

TZA3041BHL

VCC(R)

TONE

MONIN

(3)

TZERO

(4)

BGAP

22 nF

1, 3, 8, 9, 11,

14, 16, 17,

24, 25, 32

GND

BIAS

LAQ

18, 21,

27, 30

VCC(B)

VCC(G)

ALS

DINQ

DIN

ENL

(5)

data inputs

normal mode

(CML/PECL compatible)

laser

MPD

(6)

(2)

ONE

ZERO

C2
22 nF

(1)

VCC

C3
22 nF

C4
22 nF

loop mode inputs

(CML/PECL

compatible)

DLOOP

DLOOPQ

(1)

Fig.19 Application diagram with the TZA3041BHL configured for 1.2 Gbits/s (Gigabit Ethernet/Fibre Channel).

(1) Ferrite bead e.g. Murata BLM31A601S.

(2) C5 is required to meet the minimum capacitance value on pin MONIN (optional, see Section "Automatic laser control").

(3) C6 enhances modulation control loop time constant (optional).

(4) C7 enhances bias control loop time constant (optional).

(5) R1 and R2 are used for setting optical 0 and optical 1 reference currents (see Section "Automatic laser control").

(6) Z1 is required for balancing the output stage (see Section "Power supply connections").

2002 Aug 13

Philips Semiconductors

Product specification

Gigabit Ethernet/Fibre Channel laser
drivers

TZA3041AHL; TZA3041BHL;

TZA3041U

BONDING PAD LOCATIONS

Note

1. All x and y coordinates represent the position of the

centre of the pad in

m with respect to the centre of the

die (see Fig.20).

SYMBOL

PAD

COORDINATES

(1)

GND

664

910

MONIN

524

910

GND

367

910

IGM

227

910

TONE

910

TZERO

+87

910

BGAP

+244

910

CC(G)

+384

910

CC(G)

+524

910

GND

+664

910

GND

+910

630

CC(B)

+910

490

CC(B)

+910

350

GND

+910

210

LAQ

+910

+70

GND

+910

+210

BIAS

+910

+350

GND

+910

+490

GND

+910

+630

GND

+681

+910

ALARMHI

+541

+910

CC(R)

+384

+910

DLOOP

+227

+910

DLOOPQ

+87

+910

CC(R)

+910

ALARMLO

210

+910

ONE

367

+910

ZERO

524

+910

GND

681

+910

GND

910

+681

ALARM

910

+541

ENL

910

+384

CC(R)

910

+227

DIN

910

+70

DINQ

910

CC(R)

910

227

ALS

910

367

GND

910

551

GND

910

664

SYMBOL

PAD

COORDINATES

(1)

2002 Aug 13

Philips Semiconductors

Product specification

Gigabit Ethernet/Fibre Channel laser
drivers

TZA3041AHL; TZA3041BHL;

TZA3041U

handbook, full pagewidth

MBK871

2 mm

(1)

TZA3041U

2 mm

(1)

TONE

IGM

GND

MONIN

GND

CC(G)

BGAP

TZERO

ALARMLO

ZERO

GND

ONE

LAQ

VCC(B)

GND

ALS

GND

BIAS

GND

ENL

ALARM

GND

VCC(R)

DINQ

DIN

VCC(R)

GND

ALARMHI

CC(R)

DLOOP

DLOOPQ

CC(R)

Fig.20 Bonding pad locations of TZA3041U.

(1) Typical value.

Table 1

Physical characteristics of bare die

PARAMETER

VALUE

Glass passivation

2.1

m PSG (PhosphoSilicate Glass) on top of 0.7

m silicon nitride

Bonding pad dimension

minimum dimension of exposed metallization is 90

m (pad size = 100

100

Metallization

1.2

m AlCu (1% Cu)

Thickness

380

m nominal

Size

2.000

2.000 mm (4.000 mm

)

Backing

silicon; electrically connected to GND potential through substrate contacts

Attach temperature

<430

C; glue is recommended for attaching die

Attach time

<15 s

2002 Aug 13

Philips Semiconductors

Product specification

Gigabit Ethernet/Fibre Channel laser
drivers

TZA3041AHL; TZA3041BHL;

TZA3041U

PACKAGE OUTLINE

0.2

UNIT

max.

(1)

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC

JEDEC

EIAJ

1.60

0.15
0.05

1.5
1.3

0.25

0.27
0.17

0.18
0.12

5.1
4.9

0.5

7.15
6.85

1.0

0.95
0.55

7
0

0.12

0.1

DIMENSIONS (mm are the original dimensions)

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

0.75
0.45

SOT401-1

136E01

MS-026

99-12-27
00-01-19

(1)

5.1
4.9

7.15
6.85

0.95
0.55

Z E

detail X

(A )

2.5

5 mm

scale

LQFP32: plastic low profile quad flat package; 32 leads; body 5 x 5 x 1.4 mm

SOT401-1

pin 1 index

2002 Aug 13

Philips Semiconductors

Product specification

Gigabit Ethernet/Fibre Channel laser
drivers

TZA3041AHL; TZA3041BHL;

TZA3041U

SOLDERING

Introduction to soldering surface mount packages

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

"Data Handbook IC26; Integrated Circuit Packages"

(document order number 9398 652 90011).

There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering can still be used for
certain surface mount ICs, but it is not suitable for fine pitch
SMDs. In these situations reflow soldering is
recommended.

Reflow soldering

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several methods exist for reflowing; for example,
convection or convection/infrared heating in a conveyor
type oven. Throughput times (preheating, soldering and
cooling) vary between 100 and 200 seconds depending
on heating method.

Typical reflow peak temperatures range from
215 to 250

C. The top-surface temperature of the

packages should preferable be kept below 220

C for

thick/large packages, and below 235

C for small/thin

packages.

Wave soldering

Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.

To overcome these problems the double-wave soldering
method was specifically developed.

If wave soldering is used the following conditions must be
observed for optimal results:

Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.

For packages with leads on two sides and a pitch (e):

larger than or equal to 1.27 mm, the footprint

longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;

smaller than 1.27 mm, the footprint longitudinal axis

must be parallel to the transport direction of the
printed-circuit board.

The footprint must incorporate solder thieves at the
downstream end.

For packages with leads on four sides, the footprint must
be placed at a 45

angle to the transport direction of the

printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Typical dwell time is 4 seconds at 250

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Manual soldering

Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300

When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320

2002 Aug 13

Philips Semiconductors

Product specification

Gigabit Ethernet/Fibre Channel laser
drivers

TZA3041AHL; TZA3041BHL;

TZA3041U

Suitability of surface mount IC packages for wave and reflow soldering methods

Notes

1. For more detailed information on the BGA packages refer to the

"(LF)BGA Application Note" (AN01026); order a copy

from your Philips Semiconductors sales office.

2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum

temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the

"Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods".

3. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder

cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side,
the solder might be deposited on the heatsink surface.

4. If wave soldering is considered, then the package must be placed at a 45

angle to the solder wave direction.

The package footprint must incorporate solder thieves downstream and at the side corners.

5. Wave soldering is suitable for LQFP, TQFP and QFP packages with a pitch (e) larger than 0.8 mm; it is definitely not

suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

6. Wave soldering is suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is

definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

PACKAGE

(1)

SOLDERING METHOD

WAVE

REFLOW

(2)

BGA, LBGA, LFBGA, SQFP, TFBGA, VFBGA

not suitable

suitable

HBCC, HBGA, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN,
HVSON, SMS

not suitable

(3)

suitable

PLCC

(4)

, SO, SOJ

suitable

LQFP, QFP, TQFP

not recommended

(4)(5)

suitable

SSOP, TSSOP, VSO

not recommended

(6)

suitable

2002 Aug 13

Philips Semiconductors

Product specification

Gigabit Ethernet/Fibre Channel laser
drivers

TZA3041AHL; TZA3041BHL;

TZA3041U

DATA SHEET STATUS

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

DATA SHEET STATUS

(1)

PRODUCT

STATUS

(2)

DEFINITIONS

Objective data

Development

This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

Preliminary data

Qualification

This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

Product data

Production

This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.

DEFINITIONS

Short-form specification

The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition

Limiting values given are in

accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information

Applications that are

described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.

DISCLAIMERS

Life support applications

These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products

for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes

Philips Semiconductors

reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.

Bare die

All die are tested and are guaranteed to

comply with all data sheet limits up to the point of wafer
sawing for a period of ninety (90) days from the date of
Philips' delivery. If there are data sheet limits not
guaranteed, these will be separately indicated in the data
sheet. There are no post packing tests performed on
individual die or wafer. Philips Semiconductors has no
control of third party procedures in the sawing, handling,
packing or assembly of the die. Accordingly, Philips
Semiconductors assumes no liability for device
functionality or performance of the die or systems after
third party sawing, handling, packing or assembly of the
die. It is the responsibility of the customer to test and
qualify their application in which the die is used.

SCA74

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Philips Semiconductors a worldwide company

Contact information

For additional information please visit http://www.semiconductors.philips.com.

Fax: +31 40 27 24825

For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.

Printed in The Netherlands

403510/04/pp

Date of release:

2002 Aug 13

Document order number:

9397 750 09949

Document Outline

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Document Outline

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: TZA3041BHL