DATA SHEET
Product specification
Supersedes data of 1998 Jul 08
File under Integrated Circuits, IC19
2000 Mar 28
INTEGRATED CIRCUITS
TZA3043; TZA3043B
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
2000 Mar 28
2
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
FEATURES
Wide dynamic range, typically 2.5
A to 1.5 mA
Low equivalent input noise, typically 5.7 pA/
Hz
Differential transimpedance of 8.3 k
Wide bandwidth from DC to 950 MHz
Differential outputs
On-chip Automatic Gain Control (AGC)
No external components required
Single supply voltage from 3.0 to 5.5 V
Bias voltage for PIN diode
Pin compatible with TZA3023 and SA5223
Switched output polarity available (B-version).
APPLICATIONS
Digital fibre optic receiver in medium and long haul
optical telecommunications transmission systems or in
high speed data networks
Wideband RF gain block.
GENERAL DESCRIPTION
The TZA3043 is a high speed transimpedance amplifier
with AGC designed to be used in Gigabit Ethernet/Fibre
Channel optical links. It amplifies the current generated by
a photo detector (PIN diode or avalanche photodiode) and
converts it to a differential output voltage.
ORDERING INFORMATION
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
TZA3043T
SO8
plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
TZA3043U
-
bare die in waffle pack carriers; die dimensions 1.030
1.300 mm
-
TZA3043BT
SO8
plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
TZA3043BU
-
bare die in waffle pack carriers; die dimensions 1.030
1.300 mm
-
2000 Mar 28
3
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
BLOCK DIAGRAM
handbook, full pagewidth
GAIN
CONTROL
BIASING
A2
A1
1 (1)
1 nF
DREF
3 (4)
IPhoto
low noise
amplifier
single-ended to
differential converter
VCC
8 (11, 12)
(13)
VCC
2, 4, 5 (2, 3, 5, 6, 7, 8)
GND
AGC
(1)
peak detector
TZA3043T
TZA3043U
(9) 6
OUT
(10) 7
OUTQ
MGU096
10 pF
125
125
Fig.1 Block diagram of TZA3043T and TZA3043U.
The numbers in brackets refer to the pad numbers of the bare die version.
(1) AGC analog I/O (pad 13) is only available on the TZA3043U.
handbook, full pagewidth
GAIN
CONTROL
BIASING
A2
A1
1 (1)
1 nF
DREF
3 (4)
IPhoto
low noise
amplifier
single-ended to
differential converter
VCC
8 (11, 12)
(13)
VCC
2, 4, 5 (2, 3, 5, 6, 7, 8)
GND
AGC
(1)
peak detector
TZA3043BT
TZA3043BU
(9) 6
OUT
(10) 7
OUTQ
MGU097
10 pF
125
125
Fig.2 Block diagram of TZA3043BT and TZA3043BU.
The numbers in brackets refer to the pad numbers of the bare die version.
(1) AGC analog I/O (pad 13) is only available on the TZA3043BU.
2000 Mar 28
4
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
PINNING
SYMBOL
PIN
TZA3043T
PIN
TZA3043BT
PAD
TZA3043U
PAD
TZA3043BU
TYPE
DESCRIPTION
DREF
1
1
1
1
analog
output
bias voltage for PIN diode; cathode
should be connected to this pin
GND
2
2
2, 3
2, 3
ground
ground
IPhoto
3
3
4
4
analog
input
current input; anode of PIN diode
should be connected to this pin;
DC bias level of 822 mV is one diode
voltage above ground
GND
4
4
5, 6
5, 6
ground
ground
GND
5
5
7, 8
7, 8
ground
ground
OUT
6
7
9
10
data
output
data output; pin OUT goes HIGH
when current flows into pin IPhoto
OUTQ
7
6
10
9
data
output
compliment of pin OUT
V
CC
8
8
11, 12
11, 12
supply
supply voltage
AGC
-
-
13
13
input/
output
AGC analog I/O
handbook, halfpage
1
2
3
4
8
7
6
5
MGR287
TZA3043T
VCC
OUTQ
GND
OUT
GND
GND
IPhoto
DREF
Fig.3 Pin configuration of TZA3043T.
handbook, halfpage
1
2
3
4
8
7
6
5
MGU098
TZA3043BT
VCC
OUT
GND
OUTQ
GND
GND
IPhoto
DREF
Fig.4 Pin configuration of TZA3043BT.
2000 Mar 28
5
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
FUNCTIONAL DESCRIPTION
The TZA3043 is a transimpedance amplifier intended for
use in fibre optic links for signal recovery in Fibre Channel
or Gigabit Ethernet applications. It amplifies the current
generated by a photo detector (PIN diode or avalanche
photodiode) and transforms it into a differential output
voltage. The most important characteristics of the
TZA3043 are high receiver sensitivity and wide dynamic
range. High receiver sensitivity is achieved by minimizing
noise in the transimpedance amplifier.
Input circuit
The signal current generated by a PIN diode can vary
between 2.5
A to 1.5 mA (p-p).
An AGC loop is implemented to make it possible to handle
such a wide dynamic range. The AGC loop increases the
dynamic range of the receiver by reducing the feedback
resistance of the preamplifier.
The AGC loop hold capacitor is integrated on-chip, so an
external capacitor is not needed for AGC.
AGC monitoring
The AGC voltage can be monitored at pad 13 on the bare
die (TZA3043U/TZA3043BU). Pad 13 is not bonded in the
packaged device (TZA3043T/TZA3043BT). This pad can
be left unconnected during normal operation. It can also be
used to force an external AGC voltage. If pad 13 (AGC) is
connected to GND, the internal AGC loop is disabled and
the receiver gain is at a maximum. The maximum input
current is then approximately 75
A.
Output circuit
A differential amplifier converts the output of the
preamplifier to a differential voltage (see Fig.5).
The logic level symbol definitions for the differential
outputs are shown in Fig.6.
handbook, full pagewidth
MGR290
800
800
30
VCC
OUTQ
OUT
4.5 mA
2 mA
4.5 mA
30
Fig.5 Differential data output circuit.
handbook, full pagewidth
MGR243
VOO
VO(max)
VOQH
VOH
VOQL
VOL
VO(min)
Vo(p-p)
VCC
Fig.6 Logic level symbol definitions for data outputs OUT and OUTQ.
2000 Mar 28
6
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
PIN diode bias voltage DREF
The transimpedance amplifier together with the PIN diode
determines the performance of an optical receiver for a
large extent. Especially how the PIN diode is connected to
the input and the layout around the input pin influence the
key parameters like sensitivity, the bandwidth and the
Power Supply Rejection Ratio (PSRR) of a
transimpedance amplifier. The total capacitance at the
input pin is critical to obtain the highest sensitivity. It should
be kept to a minimum by reducing the capacitance of the
PIN diode and the parasitics around the input pin. The
PIN diode should be placed very close to the IC to reduce
the parasitics. Because the capacitance of the PIN diode
depends on the reverse voltage across it, the reverse
voltage should be chosen as high as possible.
The PIN diode can be connected to the input in two ways
as shown in Figs 7 and 8. In Fig.7 the PIN diode is
connected between pins DREF and IPhoto. Pin DREF
provides an easy bias voltage for the PIN diode. The
voltage at DREF is derived from V
CC
by a low-pass filter.
The low-pass filter consisting of the internal resistors
R1, R2, C1 and the external capacitor C2 rejects the
supply voltage noise. The external capacitor C2 should be
equal or larger then 1 nF for a high PSRR.
The reverse voltage across the PIN diode is 4.18 V
(5
-
0.82 V) for 5 V supply or 2.48 V (3.3
-
0.82 V) for
3.3 V supply.
It is preferable to connect the cathode of the PIN diode to
a higher voltage then V
CC
when such a voltage source is
available on the board. In this case pin DREF can be left
unconnected. When a negative supply voltage is available,
the configuration in Fig.8 can be used. It should be noted
that in this case the direction of the signal current is
reversed compared to the Fig.7. Proper filtering of the bias
voltage for the PIN diode is essential to achieve the
highest sensitivity level.
MGU103
R1
125
R2
125
C1
10 pF
C2
1 nF
VCC
Ii
1
8
TZA3043
3
IPhoto
DREF
Fig.7
The PIN diode connected between the input
and pin DREF.
MGU104
R1
125
R2
125
C1
10 pF
VCC
1
8
TZA3043
3
IPhoto
DREF
Ii
negative supply voltage
Fig.8
The PIN diode connected between the input
and a negative supply voltage.
2000 Mar 28
7
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
AGC
The TZA3043 transimpedance amplifier can handle input
currents from 1
A to 1.5 mA. This means a dynamic
range of 63 dB. At low input currents, the transimpedance
must be high to get enough output voltage, and the noise
should be low enough to guaranty minimum bit error rate.
At high input currents however, the transimpedance
should be low to avoid pulse width distortion. This means
that the gain of the amplifier has to vary depending on the
input signal level to handle such a wide dynamic range.
This is achieved in the TZA3043 by implementing an
Automatic Gain Control (AGC) loop. The AGC loop
consists of a peak detector, a hold capacitor and a gain
control circuit.
The peak amplitude of the signal is detected by the peak
detector and it is stored on the hold capacitor. The voltage
over the hold capacitor is compared to a threshold level.
The threshold level is set to 25
A (p-p) input current. AGC
becomes active only for input signals larger than the
threshold level.
It is disabled for smaller signals. The transimpedance is
then at its maximum value (8.3 k
differential).
When AGC is active, the feedback resistor of the
transimpedance amplifier is reduced to keep the output
voltage constant. The transimpedance is regulated from
8.3 k
at low currents (I < 30
A) to 1 k
at high currents
(I < 500
A). Above 500
A the transimpedance is at its
minimum and can not be reduced further but the front-end
remains linear until input currents of 1.5 mA.
The upper part of Fig.9 shows the output voltages of the
TZA3043 (OUT and OUTQ) as a function of the DC input
current. In the lower part, the difference of both voltages is
shown. It can be seen from the figure that the output
changes linearly up to 25
A input current where AGC
becomes active. From this point on, AGC tries to keep the
differential output voltage constant around 200 mV for
medium range input currents (input currents <200
A).
The AGC can not regulate any more above 500
A input
current and the output voltage rises again with the input
current.
handbook, full pagewidth
0
600
400
200
MGU105
1
10
2
10
(1)
(2)
(3)
Ii (
A)
Vo
(V)
Vo(dif)
(mV)
10
3
10
4
3.1
3.3
3.7
3.5
3.9
VCC = 5 V
VOUT
VOUTQ
Fig.9 AGC characteristics.
V
o(dif)
= V
OUT
-
V
OUTQ
.
(1) V
CC
= 3 V.
(2) V
CC
= 3.3 V.
(3) V
CC
= 5 V.
2000 Mar 28
8
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
HANDLING
Precautions should be taken to avoid damage through electrostatic discharge. This is particularly important during
assembly and handling of the bare die. Additional safety can be obtained by bonding the V
CC
and GND pads first, the
remaining pads may then be bonded to their external connections in any order.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
CC
supply voltage
-
0.5
+6
V
V
n
DC voltage
pin/pad IPhoto
-
0.5
+1
V
pins/pads OUT and OUTQ
-
0.5
V
CC
+ 0.5
V
pad AGC (bare die only)
-
0.5
V
CC
+ 0.5
V
pin/pad DREF
-
0.5
V
CC
+ 0.5
V
I
n
DC current
pin/pad IPhoto
-
2.5
+2.5
mA
pins/pads OUT and OUTQ
-
15
+15
mA
pad AGC (bare die only)
-
0.2
+0.2
mA
pin/pad DREF
-
2.5
+2.5
mA
P
tot
total power dissipation
-
300
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
ambient temperature
-
40
+85
C
SYMBOL
PARAMETER
VALUE
UNIT
R
th(j-a)
thermal resistance from junction to ambient
160
K/W
2000 Mar 28
9
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
CHARACTERISTICS
Typical values at T
amb
= 25
C and V
CC
= 5 V; minimum and maximum values are valid over the entire ambient
temperature range and supply range; all voltages are measured with respect to ground; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CC
supply voltage
3
5
5.5
V
I
CC
supply current
AC coupled; R
L
= 50
-
34
47
mA
P
tot
total power dissipation
V
CC
= 5 V
-
170
259
mW
V
CC
= 3.3 V
-
112
169
mW
T
j
junction temperature
-
40
-
+125
C
T
amb
ambient temperature
-
40
+25
+85
C
R
tr
small-signal transresistance of
the receiver
measured differentially;
AC coupled
R
L
=
13.2
16.6
20
k
R
L
= 50
6.6
8.3
10
k
f
-
3dB(h)
high frequency
-
3 dB point
V
CC
= 5 V; C
i
= 0.7 pF
1000
1200
-
MHz
V
CC
= 3.3 V; C
i
= 0.7 pF
850
1100
-
MHz
PSRR
power supply rejection ratio
measured differentially;
note 1
f = 1 to 100 MHz
-
2
-
A/V
f = 1 GHz
-
66
-
A/V
Bias voltage: pin DREF
R
DREF
resistance between DREF and
V
CC
tested at DC
210
250
290
Input: pin IPhoto
V
bias(IPhoto)
input bias voltage on
pin IPhoto
600
822
1000
mV
I
i(IPhoto)(p-p)
input current on pin IPhoto
(peak-to-peak value)
V
CC
= 5 V; note 2
-
1500
+6
+1500
A
V
CC
= 3.3 V; note 2
-
1000
+6
+1000
A
R
i
small-signal input resistance
f
i
= 1 MHz; input current
<2
A (p-p)
-
28
-
I
n(tot)
total integrated RMS noise
current over bandwidth
referenced to input;
f = 920 MHz; note 3
-
200
-
nA
2000 Mar 28
10
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
Notes
1. PSRR is defined as the ratio of the equivalent current change at the input (
I
IPhoto
) to a change in supply voltage:
For example, a +10 mV disturbance on V
CC
at 10 MHz will typically add an extra 20 nA to the photodiode current.
The external capacitor between pins DREF and GND has a large impact on the PSRR. The specification is valid with
an external capacitor of 1 nF.
2. The pulse width distortion (PWD) is <5% over the whole input current range. The PWD is defined as:
where T is the clock period. The PWD is measured differentially with
PRBS pattern of 10
-
23
.
3. All I
n(tot)
measurements were made with an input capacitance of C
i
= 1 pF. This was comprised of 0.5 pF for the
photodiode itself, with 0.3 pF allowed for the printed-circuit board layout and 0.2 pF intrinsic to the package. Noise
performance is measured differentially.
Data outputs: pins OUT and OUTQ
V
o(cm)
common mode output voltage
AC coupled; R
L
= 50
V
CC
-
2
V
CC
-
1.7 V
CC
-
1.4 V
V
o(se)(p-p)
single-ended output voltage
(peak-to-peak value)
AC coupled; R
L
= 50
;
input current 100
A (p-p)
75
200
330
mV
V
OO
differential output offset
voltage
-
100
-
+100
mV
R
o
output resistance
single-ended; DC tested
40
50
62
t
r
, t
f
rise time, fall time
V
CC
= 5 V; 20% to 80%;
input current <20
A (p-p)
-
285
430
ps
V
CC
= 3.3 V; 20% to 80%;
input current <20
A (p-p)
-
300
460
ps
Automatic gain control loop: pad AGC
I
th(AGC)
AGC threshold current
referenced to the peak
input current; tested at
10 MHz
-
25
-
A
t
att(AGC)
AGC attack time
-
5
-
s
t
decay(AGC)
AGC decay time
-
10
-
ms
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
PSRR
I
IPhoto
V
CC
--------------------
=
PWD
pulse width
T
------------------------------
1
100%
=
2000 Mar 28
11
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
TYPICAL PERFORMANCE CHARACTERISTICS
handbook, halfpage
-
40
0
(2)
40
Tj (
C)
ICC
(mA)
120
40
28
38
36
80
34
32
30
MGU112
(3)
(1)
Fig.10 Supply current as a function of the junction
temperature.
(1) V
CC
= 5 V.
(2) V
CC
= 3.3 V.
(3) V
CC
= 3 V.
handbook, halfpage
3
4
ICC
(mA)
VCC (V)
5
6
34.8
34.4
33.6
33.2
32.8
34.0
MGU113
Fig.11 Supply current as a function of the supply
voltage.
handbook, halfpage
3
4
Vi
(mV)
VCC (V)
5
6
825
823
819
817
821
MGU114
Fig.12 Input voltage as a function of the supply
voltage.
handbook, halfpage
-
40
0
(1)
(2)
(3)
40
Tj (
C)
Vi
(mV)
120
920
680
760
840
80
MGU115
Fig.13 Input voltage as a function of the junction
temperature.
(1) V
CC
= 5 V.
(2) V
CC
= 3.3 V.
(3) V
CC
= 3 V.
2000 Mar 28
12
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
handbook, halfpage
3
(1)
(2)
4
VCC (V)
5
6
1.68
1.67
1.675
1.66
1.655
1.665
MGU116
Vo(cm)
(V)
Fig.14 Common mode voltage at the output as a
function of the supply voltage.
(1) V
CC
-
V
OUT
.
(2) V
CC
-
V
OUTQ
.
handbook, halfpage
-
40
0
(2)
(1)
40
Tj (
C)
Vo(cm)
(V)
120
1.85
1.55
1.65
1.75
80
MGU117
Fig.15 Common mode voltage at the output as a
function of the junction temperature.
V
CC
= 5 V.
(1) V
CC
-
V
OUT
.
(2) V
CC
-
V
OUTQ
.
2000 Mar 28
13
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
APPLICATION AND TEST INFORMATION
handbook, full pagewidth
2
MGU101
1
8
VCC
DREF
3
IPhoto
GND
4
GND
5
GND
TZA3043T
7
OUTQ
(1)
6
OUT
(1)
R4
50
R3
50
Zo = 50
Zo = 50
22 nF
1 nF
680 nF
10
H
VP
100 nF
100 nF
Fig.16 Application diagram.
(1) For TZA3043BT pin 7 is OUT and pin 6 is OUTQ.
2000
Mar
28
14
Philips Semiconductors
Product specification
Gigabit Ether
net/Fibre Channel
tr
ansimpedance amplifier
TZA3043; TZA3043B
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ha
ndbook, full pagewidth
MGU102
12
DOUTQ
6
OUT
(2)
7
OUTQ
(2)
13
DOUT
1 k
50
50
1.5 nF
1.5 nF
100 nF
4 pF
noise filter:
1-pole, 800 MHz
100
180 k
TZA3043T
TZA3044
1
11
SUB
8
JAM
9
STQ
10
ST
3
AGND
8
VCC
VCC
6
VCCA
16
RSET
7
CF
15
Vref
14
VCCD
DGND
data out
level-detect
status
VCC
-
2 V
5
DINQ
4
DIN
3
1
22 nF
680 nF
100 nF
(1)
(1)
(1)
2
GND
4
GND
5
GND
IPhoto
DREF
1 nF
Fig.17 Gigabit Ethernet/Fibre Channel receiver using the TZA3043T and TZA3044.
(1) Ferrite bead e.g. Murata BLM10A700S.
(2) For TZA3043BT pin 7 is OUT and pin 6 is OUTQ.
2000 Mar 28
15
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
Test circuits
handbook, full pagewidth
MGU106
470
51
Zo = 50
Zo = 50
Zo = 50
IPhoto
OUT
OUTQ
10 nF
TR
D
VCC
100 nF
TR
1
SAMPLING
OSCILLOSCOPE/
TDR/TDT
2
PORT 1
PORT 2
NETWORK ANALYZER
ZT = s21.(R + Zi) . 2
R = 470
, Zi = 28
S-PARAMETER TEST SET
100 nF
TZA3043
OM5803
PATTERN
GENERATOR
2
23
-1 PRBS
C IN
D
C
C
Fig.18 Electrical test circuit.
2000 Mar 28
16
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
handbook, full pagewidth
MGU107
Zo = 50
IPhoto
PIN
DREF
DIN
DINQ
0 dBm/1300
Laser
IN
OUT
OPTICAL
INPUT
OUT
OUTQ
TR
D
VCC
100 nF
BLM
22 nF
10 nF
10%
90%
Data
in
Clock
in
ERROR DETECTOR
TR
1
2
100 nF
TZA3043
TZA3041
OM5804
OM5802
PATTERN
GENERATOR
LASER DRIVER
OPTICAL ATTENUATOR
LIGHTWAVE MULTIMETER
1.24416 GHz
2
23
-1 PRBS
C IN
D
C
C
-
9.54 dBm
SAMPLING
OSCILLOSCOPE/
TDR/TDT
Fig.19 Optical test circuit.
2000 Mar 28
17
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
handbook, full pagewidth
MGU108
Fig.20 Differential output with
-
25 dBm optical input power [input current of 5.17
A (p-p)].
handbook, full pagewidth
MGU109
Fig.21 Differential output with
-
15 dBm optical input power [input current of 51.7
A (p-p)].
2000 Mar 28
18
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
handbook, full pagewidth
MGU110
Fig.22 Differential output with
-
5 dBm optical input power [input current of 517
A (p-p)].
handbook, full pagewidth
MGU111
Fig.23 Differential output with
-
2 dBm optical input power [input current of 1030
A (p-p)].
2000 Mar 28
19
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
BONDING PAD LOCATIONS
Note
1. All coordinates are referenced, in
m, to the bottom left-hand corner of the die.
SYMBOL
PAD TZA3043U
PAD TZA3043BU
COORDINATES
(1)
x
y
DREF
1
1
95
881
GND
2
2
95
618
GND
3
3
95
473
IPhoto
4
4
95
285
GND
5
5
215
95
GND
6
6
360
95
GND
7
7
549
95
GND
8
8
691
95
OUT
9
10
785
501
OUTQ
10
9
785
641
V
CC
11
11
567
1055
V
CC
12
12
424
1055
AGC
13
13
259
1055
TZA3043U
1
10
9
2
3
4
5
0
x
y
0
13
12
11
6
7
8
1300
m
1030
m
DREF
IPhoto
GND
GND
OUTQ
OUT
MGU099
GND
GND
AGC
V
CC
V
CC
GND
GND
Fig.24 Bonding pad locations of the TZA3043U.
TZA3043BU
1
10
9
2
3
4
5
0
x
y
0
13
12
11
6
7
8
1300
m
1030
m
DREF
IPhoto
GND
GND
OUT
OUTQ
MGU100
GND
GND
AGC
V
CC
V
CC
GND
GND
Fig.25 Bonding pad locations of the TZA3043BU.
2000 Mar 28
20
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
Physical characteristics of the bare die
PARAMETER
VALUE
Glass passivation
2.1
m PSG (PhosphoSilicate Glass) on top of 0.65
m oxynitride
Bonding pad dimension
minimum dimension of exposed metallization is 90
90
m (pad size = 100
100
m)
Metallization
1.22
m W/AlCu/TiW
Thickness
380
m nominal
Size
1.03
1.30 mm (1.34 mm
2
)
Backing
silicon; electrically connected to GND potential through substrate contacts
Attach temperature
<440
C; recommended die attach is glue
Attach time
<15 s
2000 Mar 28
21
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
PACKAGE OUTLINE
UNIT
A
max.
A
1
A
2
A
3
b
p
c
D
(1)
E
(2)
(1)
e
H
E
L
L
p
Q
Z
y
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
inches
1.75
0.25
0.10
1.45
1.25
0.25
0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8
1.27
6.2
5.8
1.05
0.7
0.6
0.7
0.3
8
0
o
o
0.25
0.1
0.25
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
1.0
0.4
SOT96-1
X
w
M
A
A
1
A
2
b
p
D
H
E
L
p
Q
detail X
E
Z
e
c
L
v
M
A
(A )
3
A
4
5
pin 1 index
1
8
y
076E03
MS-012
0.069
0.010
0.004
0.057
0.049
0.01
0.019
0.014
0.0100
0.0075
0.20
0.19
0.16
0.15
0.050
0.244
0.228
0.028
0.024
0.028
0.012
0.01
0.01
0.041
0.004
0.039
0.016
0
2.5
5 mm
scale
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
97-05-22
99-12-27
2000 Mar 28
22
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
SOLDERING
Introduction to soldering surface mount packages
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our
"Data Handbook IC26; Integrated Circuit Packages"
(document order number 9398 652 90011).
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering is not always suitable
for surface mount ICs, or for printed-circuit boards with
high population densities. In these situations reflow
soldering is often used.
Reflow soldering
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.
Typical reflow peak temperatures range from
215 to 250
C. The top-surface temperature of the
packages should preferable be kept below 230
C.
Wave soldering
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
To overcome these problems the double-wave soldering
method was specifically developed.
If wave soldering is used the following conditions must be
observed for optimal results:
Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
For packages with leads on two sides and a pitch (e):
larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
The footprint must incorporate solder thieves at the
downstream end.
For packages with leads on four sides, the footprint must
be placed at a 45
angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Typical dwell time is 4 seconds at 250
C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Manual soldering
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300
C.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320
C.
2000 Mar 28
23
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
Suitability of surface mount IC packages for wave and reflow soldering methods
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the
"Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods".
2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).
3. If wave soldering is considered, then the package must be placed at a 45
angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
PACKAGE
SOLDERING METHOD
WAVE
REFLOW
(1)
BGA, LFBGA, SQFP, TFBGA
not suitable
suitable
HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, SMS
not suitable
(2)
suitable
PLCC
(3)
, SO, SOJ
suitable
suitable
LQFP, QFP, TQFP
not recommended
(3)(4)
suitable
SSOP, TSSOP, VSO
not recommended
(5)
suitable
2000 Mar 28
24
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
DATA SHEET STATUS
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DATA SHEET STATUS
PRODUCT
STATUS
DEFINITIONS
(1)
Objective specification
Development
This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification
Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
DEFINITIONS
Short-form specification
The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition
Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications
These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
BARE DIE DISCLAIMER
All die are tested and are guaranteed to comply with all
data sheet limits up to the point of wafer sawing for a
period of ninety (90) days from the date of Philips' delivery.
If there are data sheet limits not guaranteed, these will be
separately indicated in the data sheet. There are no post
packing tests performed on individual die or wafer. Philips
Semiconductors has no control of third party procedures in
the sawing, handling, packing or assembly of the die.
Accordingly, Philips Semiconductors assumes no liability
for device functionality or performance of the die or
systems after third party sawing, handling, packing or
assembly of the die. It is the responsibility of the customer
to test and qualify their application in which the die is used.
2000 Mar 28
25
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
NOTES
2000 Mar 28
26
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
NOTES
2000 Mar 28
27
Philips Semiconductors
Product specification
Gigabit Ethernet/Fibre Channel
transimpedance amplifier
TZA3043; TZA3043B
NOTES
Philips Electronics N.V.
SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
2000
69
Philips Semiconductors a worldwide company
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Printed in The Netherlands
403510/200/02/pp
28
Date of release:
2000 Mar 28
Document order number:
9397 750 06817
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