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Электронный компонент: UAA2073M/C1

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DATA SHEET
Product specification
Supersedes data of July 1995
File under Integrated Circuits, IC03
1995 Dec 07
INTEGRATED CIRCUITS
UAA2073M
Image rejecting front-end
for GSM applications
1995 Dec 07
2
Philips Semiconductors
Product specification
Image rejecting front-end
for GSM applications
UAA2073M
FEATURES
Low-noise, wide dynamic range amplifier
Very low noise figure
Dual balanced mixer for at least 30 dB; on-chip image
rejection
IF I/Q combination network for 50 to 100 MHz
Down-conversion mixer for closed-loop transmitters
Independent TX/RX fast on/off power-down modes
Very small outline packaging
Very small application (no image filter).
APPLICATIONS
900 MHz front-end for GSM hand-portable equipment
Compact digital mobile communication equipment
TDMA receivers.
GENERAL DESCRIPTION
UAA2073M contains both a receiver front-end and a high
frequency transmit mixer intended for GSM (Global
System for Mobile communications) cellular telephones.
Designed in an advanced BiCMOS process it combines
high performance with low power consumption and a high
degree of integration, thus reducing external component
costs and total front-end size.
The main advantage of the UAA2073M is its ability to
provide over 30 dB of image rejection. Consequently, the
image filter between the LNA and the mixer is suppressed
and the duplexer design is eased, compared with a
conventional front-end design.
Image rejection is achieved in the internal architecture by
two RF mixers in quadrature and two all-pass filters in I
and Q IF channels that phase shift the IF by 45
and 135
respectively. The two phase shifted IFs are recombined
and buffered to furnish the IF output signal.
For instance, signals presented at the RF input at LO + IF
frequency are rejected through this signal processing
while signals at LO
-
IF frequency can form the IF signal.
An internal switch allows to reject the upper or lower image
frequency. Image rejection is at an optimum when the IF is
71 MHz and local oscillator is above the wanted signal.
The receiver section consists of a low-noise amplifier that
drives a quadrature mixer pair. The IF amplifier has
on-chip 45
and 135
phase shifting and a combining
network for image rejection.The IF driver has differential
open-collector type outputs.
The LO part consists of an internal all-pass type phase
shifter to provide quadrature LO signals to the receive
mixers. The all-pass filters outputs are buffered before
been fed to the receive mixers.
The transmit section consists of a down-conversion mixer
and a transmit IF driver stage. In the transmit mode an
internal LO buffer is used to drive the transmit IF
down-conversion mixer.
All RF and IF inputs or outputs are balanced to reduce
EMC issues.
Fast power-up switching is possible. A synthesizer-on
(synthon) mode enables LO buffers independent of the
other circuits. When SYNTHON pin is HIGH, all internal
buffers on the LO path of the circuit are turned on, thus
minimizing LO pulling when remainder of receive chain is
powered-up.
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
UAA2073M
SSOP20
plastic shrink small outline package; 20 leads; body width 4.4 mm
SOT266-1
1995 Dec 07
3
Philips Semiconductors
Product specification
Image rejecting front-end
for GSM applications
UAA2073M
QUICK REFERENCE DATA
Note 1.
Note
1. For conditions see Chapters "DC characteristics" and "AC characteristics".
BLOCK DIAGRAM
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNIT
V
CC
supply voltage
3.6
3.75
5.3
V
I
CC(RX)
receive supply current
21
26
32
mA
I
CC(TX)
transmit supply current
9
12
15
mA
NF
noise figure on demonstration board (including matching
and PCB losses)
-
3.25
4.3
dB
G
CP
conversion power gain
20
23
26
dB
IR
image frequency rejection
30
37
-
dB
T
amb
operating ambient temperature
-
30
+25
+85
C
Fig.1 Block diagram.
handbook, full pagewidth
MBG794
LNA
IF
COMBINER
low-noise
amplifier
5
4
15
16
6
11
12
10
19
14
13
20
1
8
17
18
RX
TX
IF
LO
9
TXINA
TXINB
LOINB
MIXER
LOINA
2
3
IFA
IFB
TXOIFA
TXOIFB
n.c.
n.c.
SBS
QUADRATURE
PHASE
SHIFTER
CURRENT
REGULATORS
RFINA
RFINB
7
GND1
RXON
TXON
SYNTHON
GND2
VCC1
VCC2
UAA2073M
RECEIVE SECTION
TRANSMIT SECTION
LOCAL OSCILLATOR
SECTION
1995 Dec 07
4
Philips Semiconductors
Product specification
Image rejecting front-end
for GSM applications
UAA2073M
PINNING
SYMBOL
PIN
DESCRIPTION
SBS
1
sideband selection
n.c.
2
not connected
n.c.
3
not connected
V
CC1
4
supply voltage for receive and
transmit sections
RFINA
5
RF input A (balanced)
RFINB
6
RF input B (balanced)
GND1
7
ground 1 for receive and transmit
sections
TXINA
8
transmit mixer input A (balanced)
TXINB
9
transmit mixer input B (balanced)
SYNTHON
10
hardware power-on of LO section
(including buffers to RX and TX)
RXON
11
hardware power-on for receive
section and LO buffers to RX
TXON
12
hardware power-on for transmit
section and LO buffers to TX
TXOIFB
13
transmit mixer IF output B
(balanced)
TXOIFA
14
transmit mixer IF output A
(balanced)
V
CC2
15
supply voltage for LO section
GND2
16
ground 2 for LO section
LOINB
17
LO input B (balanced)
LOINA
18
LO input A (balanced)
IFB
19
IF output B (balanced)
IFA
20
IF output A (balanced)
Fig.2 Pin configuration.
handbook, halfpage
UAA2073M
MBG793
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
SBS
n.c.
n.c.
RFINA
RFINB
GND1
TXINA
TXINB
SYNTHON
RXON
TXON
TXOIFB
TXOIFA
GND2
LOINB
LOINA
IFB
IFA
VCC1
VCC2
1995 Dec 07
5
Philips Semiconductors
Product specification
Image rejecting front-end
for GSM applications
UAA2073M
FUNCTIONAL DESCRIPTION
Receive section
The circuit contains a low-noise amplifier followed by two
high dynamic range mixers. These mixers are of the
Gilbert-cell type. The whole internal architecture is fully
differential.
The local oscillator, shifted in phase to 45
and 135
,
mixes the amplified RF to create I and Q channels. The
two I and Q channels are buffered, phase shifted by 45
and 135
respectively, amplified and recombined internally
to realize the image rejection.
Pin SBS allows sideband selection:
f
LO
< f
RF
(SBS = 1)
f
LO
> f
RF
(SBS = 0).
Balanced signal interfaces are used for minimizing
crosstalk due to package parasitics. The RF differential
input impedance is 150
(parallel real part), choosen to
minimize current consumption at best noise performance.
The IF output is differential and of the open-collector type,
tuned for 71 MHz. Typical application will load the output
with a differential 500
load; i.e. a 500
resistor load at
each IF output, plus a 1 k
to x
narrow band matching
network (x
being the input impedance of the IF filter).
The path to V
CC
for the DC current is achieved via tuning
inductors. The output voltage is limited to V
CC
+ 3V
be
or
3 diode forward voltage drops.
Fast switching, on/off, of the receive section is controlled
by the hardware input RXON.
Fig.3 Block diagram, receive section.
handbook, full pagewidth
MBG795
LNA
IF
COMBINER
IF
amplifier
IF
amplifier
MIXER
MIXER
RXON
SYNTHON
LOIN
IFA
IFB
SBS
RFINA
RFINB
GND1
VCC1
+
45
o
+
135
o
1995 Dec 07
6
Philips Semiconductors
Product specification
Image rejecting front-end
for GSM applications
UAA2073M
Local oscillator section
The local oscillator (LO) input directly drives the two
internal all-pass networks to provide quadrature LO to the
receive mixers.
The LO differential input impedance is 50
(parallel real part).
A synthesizer-on (synthon) mode is used to power-up the
buffering on the LO inputs, minimizing the pulling effect on
the external VCO when entering transmit or receive
modes.
This mode is active when the SYNTHON input is HIGH.
Table 1 shows status of circuit in accordance with TXON,
RXON and SYNTHON inputs.
Transmit mixer
This mixer is used for down-conversion to the transmit IF.
Its inputs are coupled to the transmit RF and down-convert
it to a modulated transmit IF frequency which is phase
locked with the baseband modulation.
The transmit mixer provides a differential input at 200
and a differential output driver buffer for a 1 k
load. The
IF outputs are low impedance (emitter followers).
Fast switching, on/off, of the transmit section is controlled
by the hardware input TXON.
Fig.4 Block diagram, LO section.
handbook, halfpage
MBG796
RX
TX
IF
LO
LOINB
to TX
to RX
LOINA
QUAD
CURRENT
REGULATORS
RXON
TXON
SYNTHON
GND2
VCC2
Fig.5 Block diagram, transmit mixer.
handbook, halfpage
MBG797
TXINA
TXINB
TXON
LOIN
TX MIXER
TXOIFA
TXOIFB
SYNTHON
1995 Dec 07
7
Philips Semiconductors
Product specification
Image rejecting front-end
for GSM applications
UAA2073M
Table 1 Control of power status
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
HANDLING
Every pin withstands the ESD test in accordance with MIL-STD-883C class 2 (method 3015.5).
EXTERNAL PIN LEVEL
CIRCUIT MODE OF OPERATION
TXON
RXON
SYNTHON
LOW
LOW
LOW
power-down mode
LOW
HIGH
LOW
RX mode: receive section and LO buffers to RX on
HIGH
LOW
LOW
TX mode: transmit section and LO buffers to TX on
LOW
LOW
HIGH
synthon mode: complete LO section on
LOW
HIGH
HIGH
SRX mode: receive section on and synthon mode active
HIGH
LOW
HIGH
STX mode: transmit section on and synthon mode active
HIGH
HIGH
LOW
receive and transmit sections on; specification not guaranteed
HIGH
HIGH
HIGH
receive and transmit sections on; specification not guaranteed
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
CC
supply voltage
-
9
V
GND
difference in ground supply voltage applied between GND1 and GND2
-
0.6
V
P
l(max)
maximum power input
-
+20
dBm
P
dis(max)
maximum power dissipation in quiet air
-
250
mW
T
j(max)
maximum operating junction temperature
-
+150
C
T
stg
storage temperature
-
65
+150
C
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient in free air
120
K/W
1995 Dec 07
8
Philips Semiconductors
Product specification
Image rejecting front-end
for GSM applications
UAA2073M
DC CHARACTERISTICS
V
CC
= 3.75 V; T
amb
= 25
C; unless otherwise specified.
Note
1. The referenced inputs should be connected to a valid CMOS input level.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Pins V
CC1
and V
CC2
V
CC
supply voltage
over full temperature range
3.6
3.75
5.3
V
I
CC(RX)
supply current in RX mode
21
26
32
mA
I
CC(TX)
supply current in TX mode
9
12
15
mA
I
CC(SX)
supply current in synthon mode
4.4
5.6
6.6
mA
I
CC(SRX)
supply current in SRX mode
23
28
34
mA
I
CC(STX)
supply current in STX mode
12.5
15.0
19.5
mA
I
CC(PD)
supply current in power-down mode
-
0.01
50
A
Pins SYNTHON, RXON, TXON and SBS
V
th
CMOS threshold voltage
note 1
-
1.25
-
V
V
IH
HIGH level input voltage
0.7V
CC
-
V
CC
V
V
IL
LOW level input voltage
-
0.3
-
0.8
V
I
IH
HIGH level static input current
pin at V
CC
-
0.4 V
-
1
-
+1
A
I
IL
LOW level static input current
pin at 0.4 V
-
1
-
+1
A
Pins RFINA and RFINB
V
I(RFIN)
DC input voltage level
receive section on
2.0
2.2
2.4
V
Pins IFA and IFB
I
O(IF)
DC output current
receive section on
2.3
3.0
3.8
mA
Pins TXINA and TXINB
V
I(TXIN)
DC input voltage level
transmit section on
2.1
2.4
2.6
V
Pins TXOIFA and TXOIFB
V
O(TXOIF)
DC output voltage level
transmit section on
1.8
1.9
2.1
V
Pins LOINA and LOINB
V
I(LOIN)
DC input voltage level
receive section on
2.3
2.5
2.8
V
transmit section on
2.3
2.5
2.8
V
1995 Dec 07
9
Philips Semiconductors
Product specification
Image rejecting front-end
for GSM applications
UAA2073M
AC CHARACTERISTICS
V
CC
= 3.75 V; T
amb
=
-
30 to +85
C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Receive section (receive section on)
Z
RF
RF input impedance (real part)
balanced parallel
-
150
-
f
RF
RF input frequency
925
-
960
MHz
RL
RF
return loss on matched RF input
note 1
15
20
-
dB
G
CP
conversion power gain
differential RF input to
differential IF output matched to
1 k
differential
20
23
26
dB
G
rip
gain ripple as a function of RF
frequency
note 2
-
0.2
0.5
dB
G/T
gain variation with temperature
note 2
-
20
-
15
-
10
mdB/K
DES1
1 dB desensitization input power
interferer frequency offset
3 MHz
-
-
30
-
dBm
CP1
RX
1 dB input compression point
note 1
-
24.5
-
23.0
-
dBm
IP2D
RX
2nd order intercept point
referenced to the RF differential
input
differential output; note 2
+30
+40
-
dBm
IP3
RX
3rd order intercept point
referenced to the RF input
note 2
-
18
-
15
-
dBm
NF
RX
overall noise figure
RF input to differential IF output;
notes 2 and 3
-
3.25
4.30
dB
R
L(IF)
typical application IF output load
resistor
between pin and V
CC
-
500
-
C
L(IF)
IF output load capacitance
unbalanced
-
-
2
pF
f
IF
IF frequency range
f
LO
> f
RF
50
71
100
MHz
f
LO
< f
RF
50
71
100
MHz
IR
image frequency rejection
30
37
-
dB
Local oscillator section (RXON or TXON or SYNTHON = 1)
f
LO
LO input frequency
850
-
1100
MHz
Z
LO
LO input impedance
balanced
-
50
-
Z
LO
impedance change when
switching from synthon mode to
SRX or STX mode
mUnits measured on Smith
chart; note 1
-
20
-
RL
LO
return loss on matched input
(including power-down mode)
note 2
10
15
-
dB
P
i(LO)
LO input power level
-
7
-
4
0
dBm
RI
LO
reverse isolation
LOIN to RFIN at LO frequency;
note 2
40
-
-
dB
1995 Dec 07
10
Philips Semiconductors
Product specification
Image rejecting front-end
for GSM applications
UAA2073M
Notes
1. Measured and guaranteed only on Philips UAA2073M demonstration board at T
amb
= +25
C.
2. Measured and guaranteed only on Philips UAA2073M demonstration board.
3. This value includes printed-circuit board and balun losses on Philips UAA2073M demonstration board over full
temperature range.
Transmit section (transmit section on)
Z
O(TX)
TX IF output impedance
-
-
200
Z
L(TX)
TX IF load impedance
-
1
-
k
C
L(TX)
TX IF load capacitance
-
-
2
pF
Z
i(TX)
TX RF input impedance
balanced
-
200
-
f
i(TX)
TX input frequency
880
-
915
MHz
RL
TX
return loss on matched TX input
note 1
15
20
-
dB
G
CP
conversion power gain
from 200
to 1 k
output;
note 2
5
7.4
10
dB
f
o(TX)
TX output frequency
40
-
200
MHz
CP1
TX
1 dB input compression point
note 1
-
22
-
17.5
-
dBm
IP2
TX
2nd order intercept point
-
+20
-
dBm
IP3
TX
3rd order intercept point
-
12
-
9
-
dBm
NF
TX
noise figure
double sideband; notes 2 and 3
-
9.8
12
dB
RI
TX
reverse isolation
TXIN to LOIN; note 2
40
-
-
dB
I
TX
isolation
LOIN to TXIN; note 2
40
-
-
dB
Timing
t
start
start-up time of each block
1
5
20
s
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
1995
Dec
07
11
Philips Semiconductors
Product specification
Image rejecting front-end
for GSM applications
UAA2073M
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APPLICA
TION INFORMA
TION
handbook, full pagewidth
MBG798
R3
680
470
nH
L11
470
nH
L12
5 V
R4
680
10 pF
C17
1 nF
C19
10 pF
C18
270 nH
L16
270 nH
L15
C34
18 pF
C33
18 pF
IFO
71 MHz
UAA2073M
20
1
19
2
18
3
17
4
16
5
15
6
14
7
13
8
12
9
11
10
C27
27
pF
2
1
R10
680
k
TXON
VCC
VCC
C25
27
pF
2
1
R8
680
k
RXON
C26
27
pF
2
1
R9
680
k
SYNTHON
L4
15 nH
C6
2.2 pF
C5
2.2 pF
L5
15 nH
C8
27 pF
C7
C28
27 pF
120 pF
L6
27 nH
C24
1 nF
C23
27 pF
R5
SBS
680 k
C20
27 pF
VCC
L3
15 nH
C1
1.5 pF
C3
1.5 pF
RFIN
925 to 960 MHz
TXIN
880 to 915 MHz
L2
15 nH
C2
27 pF
C4
27 pF
L1
18 nH
L7
6.8 nH
C10 2.7 pF
C9
2.7 pF
LOIN
854 to 1032 MHz
L8
6.8 nH
C12
27 pF
C11
27 pF
27 pF
L13 220 nH
C32 8.2 pF
C31 8.2 pF
TXOIF
117 MHz
L14 220 nH
C13
C15
390 pF
C14
390 pF
IFB
IFA
R1
R2
180
180
Fig.6 Philips demonstration board diagram for GSM applications.
All matching is to 50
for measurement purposes.
Different values will be used in a real application.
1995 Dec 07
12
Philips Semiconductors
Product specification
Image rejecting front-end
for GSM applications
UAA2073M
Table 2 UAA2073M demonstration board parts list
PART
VALUE
SIZE
LOCATION
Resistors
R1
180
0805
TXOIF
R2
180
0805
TXOIF
R3
680
0805
IFO
R4
680
0805
IFO
R5
680 k
0805
SBS
R8
680 k
0805
RXON
R9
680 k
0805
SYNTHON
R10
680 k
0805
TXON
Capacitors
C1
1.5 pF
0805
RFIN
C2
27 pF
0805
RFIN
C3
1.5 pF
0805
RFIN
C4
27 pF
0805
RFIN
C5
2.2 pF
0805
TXIN
C6
2.2 pF
0805
TXIN
C7
27 pF
0805
TXIN
C8
27 pF
0805
TXIN
C9
2.7 pF
0805
LOIN
C10
2.7 pF
0805
LOIN
C11
27 pF
0805
LOIN
C12
27 pF
0805
LOIN
C13
390 pF
0805
TXOIF
C14
390 pF
0805
TXOIF
C15
27 pF
0805
V
CCLO
C17
10 pF
0805
IFO
C18
10 pF
0805
IFO
C19
1 nF
0805
IF/V
CC
C20
27 pF
0805
SBS
C23
27 pF
0805
V
CCLNA
C24
1 nF
0805
V
CCLNA
C25
27 pF
0805
RXON
C26
27 pF
0805
SYNTHON
C27
27 pF
0805
TXON
C28
120 pF
0805
V
CC
C31
8.2 pF
0805
TXOIF
C32
8.2 pF
0805
TXOIF
C33
18 pF
0805
IFO
C34
18 pF
0805
IFO
Other components
Component manufacturers
All surface mounted resistors and capacitors are from
Philips Components. The small value capacitors are
multilayer ceramic with NPO dielectric. The inductors are
from Coilcraft UK.
Inductors
L1
18 nH
0805
RFIN
L2
15 nH
0805
RFIN
L3
15 nH
0805
RFIN
L4
15 nH
0805
TXIN
L5
15 nH
0805
TXIN
L6
27 nH
0805
TXIN
L7
6.8 nH
0805
LOIN
L8
6.8 nH
0805
LOIN
L11
470 nH
1008
IFO
L12
470 nH
1008
IFO
L13
220 nH
0805
TXOIF
L14
220 nH
0805
TXOIF
L15
270 nH
1008
IFO
L16
270 nH
1008
IFO
COMPONENT
DESCRIPTIONS
IC1
UAA2073M
SMA/RIM
sockets for RF and IF inputs/outputs
SMB
V
CC
socket
PART
VALUE
SIZE
LOCATION
1995 Dec 07
13
Philips Semiconductors
Product specification
Image rejecting front-end
for GSM applications
UAA2073M
PACKAGE OUTLINE
UNIT
A
1
A
2
A
3
b
p
c
D
(1)
E
(1)
(1)
e
H
E
L
L
p
Q
Z
y
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
0.15
0
1.4
1.2
0.32
0.20
0.20
0.13
6.6
6.4
4.5
4.3
0.65
1.0
0.2
6.6
6.2
0.65
0.45
0.48
0.18
10
0
o
o
0.13
0.1
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.
0.75
0.45
SOT266-1
90-04-05
95-02-25
w
M
A
A
1
A
2
b
p
D
H
E
L
p
Q
detail X
E
Z
e
c
L
v
M
A
X
(A )
3
A
y
0.25
1
10
20
11
pin 1 index
0
2.5
5 mm
scale
SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm
SOT266-1
A
max.
1.5
1995 Dec 07
14
Philips Semiconductors
Product specification
Image rejecting front-end
for GSM applications
UAA2073M
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our
"IC Package Databook" (order code 9398 652 90011).
Reflow soldering
Reflow soldering techniques are suitable for all SSOP
packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250
C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45
C.
Wave soldering
Wave soldering is not recommended for SSOP packages.
This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.
If wave soldering cannot be avoided, the following
conditions must be observed:
A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave)
soldering technique should be used.
The longitudinal axis of the package footprint must
be parallel to the solder flow and must incorporate
solder thieves at the downstream end.
Even with these conditions, only consider wave
soldering SSOP packages that have a body width of
4.4 mm, that is SSOP16 (SOT369-1) or
SSOP20 (SOT266-1)
.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Maximum permissible solder temperature is 260
C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150
C within
6 seconds. Typical dwell time is 4 seconds at 250
C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Repairing soldered joints
Fix the component by first soldering two diagonally-
opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300
C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320
C.
1995 Dec 07
15
Philips Semiconductors
Product specification
Image rejecting front-end
for GSM applications
UAA2073M
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
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SCD41
Philips Electronics N.V. 1995
All rights are reserved. Reproduction in whole or in part is prohibited without the
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The information presented in this document does not form part of any quotation
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use. Publication thereof does not convey nor imply any license under patent- or
other industrial or intellectual property rights.
Printed in The Netherlands
413061/1100/03/pp16
Date of release: 1995 Dec 07
Document order number:
9397 750 00511