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Электронный компонент: UAA3592HN

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DATA SHEET
Objective specification
2002 Jul 02
INTEGRATED CIRCUITS
UAA3592
Wideband code division multiple
access frequency division duplex
power amplifier
2002 Jul 02
2
Philips Semiconductors
Objective specification
Wideband code division multiple access
frequency division duplex power amplifier
UAA3592
FEATURES
3.6 V nominal supply voltage
24 dBm average output power
0 dBm input power
Wide operating temperature range from
-
30 to +70
C
HVQFN16 package.
APPLICATIONS
WCDMA-FDD applications.
GENERAL DESCRIPTION
The UAA3592 is a Wideband Code Division Multiple
Access (WCDMA) silicon bipolar transistor Monolithic
Microwave Integrated Circuit (MMIC) Power Amplifier
(PA). The circuit is specially designed to operate at a
nominal 3.6 V battery supply voltage. It includes a current
saving architecture at low output power levels.
QUICK REFERENCE DATA
T
amb
= 25
C; V
C1
= 3.6 V; V
reg
= 2.7 V.
ORDERING INFORMATION
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNIT
V
C1
positive supply voltage
-
3.6
-
V
P
o(max)
maximum output power
-
24.5
-
dBm
efficiency at maximum power
-
35
-
%
T
amb
ambient temperature
-
30
-
+70
C
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
UAA3592HN
HVQFN16
plastic, heatsink very thin quad flat package; no leads;
16 terminals; body 4
4
0.85 mm
SOT629-1
2002 Jul 02
3
Philips Semiconductors
Objective specification
Wideband code division multiple access
frequency division duplex power amplifier
UAA3592
BLOCK DIAGRAM
1
16
2
3
ICTL
GND
UAA3592HN
BIAS
(1)
FCA234
EN
CONTROL
Rext
RFI
15
Vreg
RFO
n.c.
10,11
4, 5
9, 12, 13
VC1
6,7
FRX
8
POWER
DETECTOR
Vdetect
14
Fig.1 Block diagram.
Die pad must be connected to ground.
2002 Jul 02
4
Philips Semiconductors
Objective specification
Wideband code division multiple access
frequency division duplex power amplifier
UAA3592
PINNING
SYMBOL
PIN
DESCRIPTION
EN
1
enable input
ICTL
2
current control input
RFI
3
power amplifier input
n.c.
4
not connected
n.c.
5
not connected
V
C1
6
supply voltage for the first stage collector
V
C1
7
supply voltage for the first stage collector
F
RX
8
RX filter
n.c.
9
not connected
RFO
10
power amplifier output
RFO
11
power amplifier output
n.c.
12
not connected
n.c.
13
not connected
V
detect
14
power detection
V
reg
15
regulated supply voltage
R
ext
16
connection to external resistor
die pad
ground
UAA3592HN
FCA235
R
ext
V
reg
V
detect
n.c.
n.c.
V
C1
V
C1
F
RX
n.c.
n.c.
RFO
RFO
n.c.
RFI
ICTL
EN
8
7
6
5
14
16
13
15
2
1
3
4
12
10
11
9
Fig.2 Pin configuration (bottom view).
2002 Jul 02
5
Philips Semiconductors
Objective specification
Wideband code division multiple access
frequency division duplex power amplifier
UAA3592
FUNCTIONAL DESCRIPTION
Operating conditions
The UAA3592 is designed to meet the
"Third Generation Partnership Project (3GPP) specification" for the Universal
Mobile Telecommunication System (UMTS) standard.
Power amplifier
The device is intended for WCDMA power amplification. The control signals select the bias current as given in Table 1.
Table 1
Current control
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. On Philips evaluation board.
HANDLING
Do not operate or store near strong electrostatic fields.
Mets class 1 ESD test requirements (Human Body Model - HBM), in accordance with
"EIA/JESD22-A114-A (October
1997)" and class A ESD test requirements (Machine Model - MM), in accordance with "EIA/JESD22-A115.-A (October
1997)".
THERMAL CHARACTERISTICS
Note
1. On Philips evaluation board.
EN
ICTL
DESCRIPTION
0
0
off
0
1
off
1
0
nominal bias current
1
1
bias current is reduced by 50% on the second stage
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C1
supply voltage for the first stage
collector
-
5.5
V
V
reg
regulated voltage
-
3.3
V
T
j(max)
maximum operating junction
temperature
-
150
C
P
tot
total power dissipation
note 1
-
tbf
mW
P
i
input power
-
10
dBm
T
stg
storage temperature
-
55
+150
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th(j-a)
thermal resistance from junction to
ambient
in free air; note 1
tbf
K/W