2002 Oct 08

Philips Semiconductors

Product specification

HF full bridge driver IC

UBA2033

FEATURES

Full bridge driver circuit

Integrated bootstrap diodes

Integrated high voltage level shift function

High voltage input for the internal supply voltage

550 V maximum voltage

Bridge disable function

Input for start-up delay

Adjustable oscillator frequency

Predefined bridge position during start-up.

APPLICATIONS

The UBA2033 can drive (via the MOSFETs) any kind of
load in a full bridge configuration

The circuit is especially designed as a commutator for
High Intensity Discharge (HID) lamps.

GENERAL DESCRIPTION

The UBA2033 is a high voltage monolithic integrated
circuit made in the EZ-HV SOI process. The circuit is
designed for driving the MOSFETs in a full bridge
configuration. In addition, it features a disable function, an
internal adjustable oscillator and an external drive function
with a low-voltage level shifter for driving the bridge.
To guarantee an accurate 50% duty factor, the oscillator
signal can be passed through a divider before being fed to
the output driver.

ORDERING INFORMATION

TYPE

NUMBER

PACKAGE

NAME

DESCRIPTION

VERSION

UBA2033TS

SSOP28

plastic shrink small outline package; 28 leads; body width 5.3 mm

SOT341-1

2002 Oct 08

Philips Semiconductors

Product specification

HF full bridge driver IC

UBA2033

PINNING

SYMBOL

PIN

DESCRIPTION

LVS

negative supply voltage (for logic
input)

EXTDR

oscillator signal input

LVS

positive supply voltage (for logic
input)

n.c.

not connected

n.c.

not connected

high voltage supply input

n.c.

not connected

n.c.

not connected

internal low voltage supply

input signal for start-up delay

divider disable input

bridge disable control input

RC input for internal oscillator

SGND

signal ground

GHL

gate of higher left output MOSFET

FSL

floating supply voltage left

SHL

source of higher left MOSFET

n.c.

not connected

n.c.

not connected

GLL

gate of lower left output MOSFET

PGND

power ground

n.c.

not connected

GLR

gate of lower right output MOSFET

n.c.

not connected

n.c.

not connected

SHR

source of higher right MOSFET

FSR

floating supply voltage right

GHR

gate of higher right output MOSFET

handbook, halfpage

UBA2033TS

MBL458

EXTDR

n.c.

VDD

SGND

GHR

FSR

SHR

n.c.

GLR

n.c.

PGND

GLL

n.c.

SHL

FSL

GHL

LVS

Fig.2 Pin configuration.

2002 Oct 08

Philips Semiconductors

Product specification

HF full bridge driver IC

UBA2033

FUNCTIONAL DESCRIPTION

Supply voltage

The UBA2033 is powered by a supply voltage applied to
pin HV, for instance the supply voltage of the full bridge.
The IC generates its own low supply voltage for the
internal circuitry. Therefore an additional low voltage
supply is not required. A capacitor has to be connected to
pin V

to obtain a ripple-free internal supply voltage.

The circuit can also be powered by a low voltage supply
directly applied to pin V

. In this case pin HV should be

connected to pin V

or SGND.

Start-up

With an increasing supply voltage the IC enters the
start-up state; the higher power transistors are kept off and
the lower power transistors are switched on. During the
start-up state the bootstrap capacitors are charged and the
bridge output current is zero. The start-up state is defined
until V

= V

DD(UVLO)

, where UVLO stands for Under

Voltage Lock-out. The state of the outputs during the
start-up phase is overruled by the bridge disable function.

Release of the power drive

At the moment the supply voltage on pin V

or HV

exceeds the level of release power drive, the output
voltage of the bridge depends on the control signal on
pin EXTDR (see Table 1). The bridge position after
start-up, disable, or delayed start-up (via pin SU) depends
on the status of the pins DD and EXTDR. If pin DD = LOW
(divider enabled) the bridge will start in the pre-defined
position: pin GLR and pin GHL = HIGH and pin GLL and
pin GHR = LOW. If pin DD = HIGH (divider disabled) the
bridge position will depend on the status of pin EXTDR.

If the supply voltage on pin V

or HV decreases and

drops below the reset level of power drive the IC enters the
start-up state again.

Oscillation

At the point where the supply voltage on pin HV crosses
the level of release power drive, the bridge begins
commutating between the following two defined states:

Higher left and lower right MOSFETs on,
higher right and lower left MOSFETs off

Higher left and lower right MOSFETs off,
higher right and lower left MOSFETs on.

The oscillation can take place in three different modes:

Internal oscillator mode.

In this mode the bridge commutating frequency is
determined by the values of an external resistor (R

osc

)

and capacitor (C

osc

). In this mode pin EXTDR must be

connected to pin

LVS. To realize an accurate 50% duty

factor, the internal divider should be used. The internal
divider is enabled by connecting pin DD to SGND. Due
to the presence of the divider the bridge frequency
is half the oscillator frequency. The commutation of the
bridge will take place at the falling edge of the signal on
pin RC. To minimize the current consumption
pins

LVS,

LVS and EXTDR can be connected

together to either pin SGND or V

. In this way the

current source in the logic voltage supply circuit is shut
off.

External oscillator mode without the internal divider.

In the external oscillator mode the external source is
connected to pin EXTDR and pin RC is short-circuited to
pin SGND to disable the internal oscillator. If the internal
divider is disabled (pin DD = V

) the duty factor of the

bridge output signal is determined by the external
oscillator signal and the bridge frequency equals the
external oscillator frequency.

External oscillator mode with the internal divider.

The external oscillator mode can also be used with the
internal divider function enabled (pin RC and
pin DD = SGND). Due to the presence of the divider the
bridge frequency is half the external oscillator
frequency. The commutation of the bridge is triggered
by the falling edge of the EXTDR signal with respect to
V

LVS

The design equation for the bridge oscillator frequency is:

Non-overlap time

The non-overlap time is the time between turning off the
conducting pair of MOSFETs and turning on the next pair.
The non-overlap time is internally fixed to a very small
value, which allows an HID system to operate with a very
small phase difference between load current and full
bridge voltage (pins SHL and SHR). Especially when
igniting an HID lamp via a LC resonance circuit, a small
`dead time' is essential. The high maximum operating
frequency, together with a small `dead time', also gives the
opportunity to ignite the HID lamp at the third harmonic of
the full bridge voltage, thereby reducing costs in the
magnetic power components.

bridge

osc

(

)

--------------------------------------------------

2002 Oct 08

Philips Semiconductors

Product specification

HF full bridge driver IC

UBA2033

'Dead time' can be increased by adding a resistor (for
slowly turning on the full bridge power FETs) and a diode
(for quickly turning off the full bridge power FETs) in
parallel, both in series with the gate drivers (see Fig.3).

Divider function

If pin DD = SGND, then the divider function is
enabled/present. If the divider function is present there is
no direct relation between the position of the bridge output
and the status of pin EXTDR.

Start-up delay

Normally, the circuit starts oscillating as soon as pin V

HV reaches the level of release power drive. At this

moment the gate drive voltage is equal to the voltage on
pin V

for the low side transistors and V

0.6 V for the

high side transistors. If this voltage is too low for sufficient
drive of the MOSFETs the release of the power drive can
be delayed via pin SU.

A simple RC filter (R between pins V

and SU;

C between pins SU and SGND) can be used to make a
delay, or a control signal from a processor can be used.

Bridge disable

The bridge disable function can be used to switch off all the
MOSFETs as soon as the voltage on pin BD exceeds the
bridge disable voltage (1.29 V). The bridge disable
function overrules all the other states.

Table 1

Logic table; note 1

Note

1. X = don't care

a) BD, SU and DD logic levels are with respect to SGND

b) EXTDR logic levels are with respect to V

LVS

c) GHL logic levels are with respect to SHL

d) GHR logic levels are with respect to SHR

e) GLL and GLR logic levels are with respect to PGND

f) If pin DD = LOW the bridge enters the state (oscillation state and pin BD = LOW and pin SU = HIGH) in the

pre-defined position pin GHL and pin GLR = HIGH and pin GLL and pin GHR = LOW.

DEVICE

STATUS

INPUTS

OUTPUTS

EXTDR

GHL

GHR

GLL

GLR

Start-up state

HIGH

LOW

HIGH

Oscillation state

HIGH

LOW

HIGH

LOW

HIGH

LOW

HIGH

LOW

HIGH

LOW

HIGH

LOW

HIGH

LOW

HIGH

LOW

HIGH

LOW-to-HIGH

HIGH

HIGH-to-LOW

LOW

HIGH

LOW

2002 Oct 08

Philips Semiconductors

Product specification

HF full bridge driver IC

UBA2033

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); all voltages are measured with respect to
SGND; positive currents flow into the IC.

Note

1. In accordance with the Human Body Model (HBM): equivalent to discharging a 100 pF capacitor through a 1.5 k

series resistor.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

supply voltage (low voltage)

DC value

transient at t < 0.1

supply voltage (high voltage)

550

FSL

floating supply voltage left

SHL

= V

SHR

= 550 V

564

SHL

= V

SHR

= 0 V

FSR

floating supply voltage right

SHL

= V

SHR

= 550 V

564

SHL

= V

SHR

= 0 V

SHL

source voltage for higher left
MOSFETs

with respect to PGND and SGND

+550

with respect to SGND; t < 1

SHR

source voltage for higher right
MOSFETs

with respect to PGND and SGND

+550

with respect to SGND; t < 1

PGND

power ground voltage

with respect to SGND

LVS

negative supply voltage for logic input

0.9

+17

LVS

negative supply current for logic input pin EXTDR = HIGH

LVS

positive supply voltage for logic input

= 0 V; DC value

transient at t < 0.1

i(EXTDR)

input voltage from external oscillator
on pin EXTDR

with respect to V

LVS

i(RC)

input voltage on pin RC

DC value

transient at t < 0.1

i(SU)

input voltage on pin SU

DC value

transient at t < 0.1

i(BD)

input voltage on pin BD

DC value

transient at t < 0.1

i(DD)

input voltage on pin DD

DC value

transient at t < 0.1

slew rate at output pins

repetitive

V/ns

junction temperature

+150

amb

ambient temperature

+150

stg

storage temperature

+150

esd

electrostatic discharge voltage on
pins HV,

LVS,

LVS, EXTDR, FSL,

GHL, SHL, SHR, GHR and FSR

note 1

900

2002 Oct 08

Philips Semiconductors

Product specification

HF full bridge driver IC

UBA2033

THERMAL CHARACTERISTICS

QUALITY SPECIFICATION

In accordance with

"SNW-FQ-611D".

CHARACTERISTICS
T

= 25

C; all voltages are measured with respect to SGND; positive currents flow into the IC; unless otherwise

specified.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

th(j-a)

thermal resistance from junction to ambient

in free air

100

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

High voltage

high voltage supply current

t < 0.5 s and V

= 550 V

FSL

, I

FSR

high voltage floating supply
current

t < 0.5 s and V

FSL

= V

FSR

= 564 V

Start-up; powered via pin HV

i(HV)

HV input current

= 11 V; note 1

0.5

1.0

HV(rel)

level of release power drive
voltage

12.5

HV(UVLO)

reset level of power drive voltage

8.5

11.5

HV(hys)

HV hysteresis voltage

2.0

2.5

3.0

internal supply voltage

= 20 V

10.5

11.5

13.5

Start-up; powered via pin V

i(DD)

input current

= 8.25 V; note 2

0.5

1.0

DD(rel)

level of release power drive
voltage

8.25

9.0

9.75

DD(UVLO)

reset level of power drive voltage

5.75

6.5

7.25

DD(hys)

hysteresis voltage

2.0

2.5

3.0

Output stage

on(H)

higher MOSFETs on resistance

FSR

= V

FSL

= 12 V (with respect

to SHR and SHL); I

source

= 50 mA

off(H)

higher MOSFETs off resistance

FSR

= V

FSL

= 12 V (with respect

to SHR and SHL); I

sink

= 50 mA

on(L)

lower MOSFETs on resistance

= 12 V; I

source

= 50 mA

off(L)

lower MOSFETs off resistance

= 12 V; I

sink

= 50 mA

o(source)

output source current

= V

FSL

= V

FSR

= 12 V;

GHR

= V

GHL

= V

GLR

= V

GLL

= 0 V

130

180

o(sink)

output sink current

= V

FSL

= V

FSR

= 12 V;

GHR

= V

GHL

= V

GLR

= V

GLL

= 12 V

150

200

diode

bootstrap diode voltage drop

diode

= 20 mA

1.7

2.1

2.5

non-overlap time

250

FSL

HS lockout voltage left

3.0

4.0

5.0

2002 Oct 08

Philips Semiconductors

Product specification

HF full bridge driver IC

UBA2033

Notes

1. The current is specified without commutation of the bridge. The current into pin HV is limited by a thermal protection

circuit. The current is limited to 11 mA at T

= 150

2. The current is specified without commutation of the bridge and pin HV is connected to V

3. The minimum frequency is mainly determined by the value of the bootstrap capacitors.

FSR

HS lockout voltage right

3.0

4.0

5.0

FSL

FS supply current left

FSL

= 12 V

FSR

FS supply current right

FSR

= 12 V

DD input

HIGH-level input voltage

= 12 V

LOW-level input voltage

i(DD)

input current into pin DD

SU input

HIGH-level input voltage

= 12 V

LOW-level input voltage

i(SU)

input current into pin SU

External drive input

HIGH-level input voltage

with respect to V

LVS

4.0

LOW-level input voltage

with respect to V

LVS

1.0

i(EXTDR)

input current into pin EXTDR

bridge

bridge frequency

note 3

250

kHz

Low voltage logic supply

LVS

low voltage supply current

LVS

= V

EXTDR

= 5.75 to 14 V with

respect to V

LVS

250

500

LVS

low voltage supply voltage

with respect to V

LVS

5.75

Bridge disable input

ref(dis)

disable reference voltage

1.23

1.29

1.35

i(BD)

disable input current

Internal oscillator

bridge

bridge oscillating frequency

note 3

100

kHz

osc(T)

oscillator frequency variation
with temperature

bridge

= 250 Hz and

amb

40 to +150

+10

osc(VDD)

oscillator frequency variation
with V

bridge

= 250 Hz and

= 7.25 to 14 V

+10

high level trip point

RC(high)

= k

0.38

0.4

0.42

low level trip point

RC(low)

= k

0.01

osc

oscillator constant

bridge

= 250 Hz

0.94

1.02

1.10

ext

external resistor to V

100

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

2002 Oct 08

Philips Semiconductors

Product specification

HF full bridge driver IC

UBA2033

APPLICATION INFORMATION

Basic application

A basic full bridge configuration with an HID lamp is shown
in Fig.3. The bridge disable, the start-up delay and the
external drive functions are not used in this application.
The pins

LVS,

LVS, EXTDR and BD are short-circuited

to SGND. The internal oscillator is used and to realize a
50% duty cycle the internal divider function has to be used

by connecting pin DD to SGND. The IC is powered by the
high voltage supply. Because the internal oscillator is
used, the bridge commutating frequency is determined by
the values of R

osc

and C

osc

. The bridge starts oscillating

when the HV supply voltage exceeds the level of release
power drive (typically 12.5 V on pin HV). If the supply
voltage on pin HV drops below the reset level of power
drive (typically 10 V on pin HV), the UBA2033 enters the
start-up state.

handbook, full pagewidth

UBA2033TS

VDD

EXTDR

SGND

GHR

FSR

SHR

GLR

R>100

GLL

SHL

FSL

GHL

PGND

IGNITOR

Rosc

Cosc

high voltage
550 V (max)

GND

MBL459

LVS

Fig.3 Basic configuration.

2002 Oct 08

Philips Semiconductors

Product specification

HF full bridge driver IC

UBA2033

Application with external control

Figure 4 shows an application containing a system
ground-referenced control circuit. Pin

LVS can be

connected to the same supply as the external oscillator
control unit and pin

LVS is connected to SGND. Pin RC is

short-circuited to SGND. The bridge commutation
frequency is determined by the external oscillator. The
bridge disable input (pin BD) can be used to immediately
turn off all four MOSFETs in the full bridge.

handbook, full pagewidth

UBA2033TS

VDD

EXTDR

SGND

GHR

FSR

SHR

GLR

R>100

GLL

SHL

FSL

GHL

PGND

IGNITOR

high voltage
550 V (max)

GND

MBL460

EXTERNAL

OSCILLATOR

CONTROL

CIRCUIT

low voltage

LVS

Fig.4 External control configuration.

2002 Oct 08

Philips Semiconductors

Product specification

HF full bridge driver IC

UBA2033

Additional application information

ATE RESISTORS

At ignition of an HID lamp, a large EMC spark occurs. This
can result in a large voltage transient or oscillation at the
gates of the full bridge MOSFETs (LL, LR, HR and HL).
When these gates are directly coupled to the gate drivers
(pins GHR, GLR, GHL and GLL), voltage overstress of the
driver outputs may occur. Therefore it is advised to add a
resistor with a minimum value of 100

in series with each

gate driver to isolate the gate driver outputs from the actual
power MOSFETs gate.

'Dead time' can also be adjusted via the combination gate
resistor and gate-source capacitance.

ATE CHARGE AND SUPPLY CURRENT AT HIGH FREQUENCY

USE

The total gate current needed to charge the gates of the
power MOSFETs equals:

Where:

gate

= gate current

bridge

= bridge frequency

gate

= gate charge.

This current is supplied via the internal low voltage supply
(V

). Since this current is limited to 11 mA (see

"Characteristics" table note 1), at higher frequencies and
with MOSFETs having a relative high gate charge, this
maximum V

supply current may not be sufficient

anymore. As a result the internal low voltage supply (V

)

and the gate drive voltage will drop resulting in an increase
of the higher resistance (R

) of the full bridge MOSFETs.

In this case an auxiliary low voltage supply is necessary.

gate

bridge

gate

2002 Oct 08

Philips Semiconductors

Product specification

HF full bridge driver IC

UBA2033

SOLDERING

Introduction to soldering surface mount packages

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

"Data Handbook IC26; Integrated Circuit Packages"

(document order number 9398 652 90011).

There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering can still be used for
certain surface mount ICs, but it is not suitable for fine pitch
SMDs. In these situations reflow soldering is
recommended.

Reflow soldering

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several methods exist for reflowing; for example,
convection or convection/infrared heating in a conveyor
type oven. Throughput times (preheating, soldering and
cooling) vary between 100 and 200 seconds depending
on heating method.

Typical reflow peak temperatures range from
215 to 250

C. The top-surface temperature of the

packages should preferable be kept below 220

C for

thick/large packages, and below 235

C for small/thin

packages.

Wave soldering

Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.

To overcome these problems the double-wave soldering
method was specifically developed.

If wave soldering is used the following conditions must be
observed for optimal results:

Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.

For packages with leads on two sides and a pitch (e):

larger than or equal to 1.27 mm, the footprint

longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;

smaller than 1.27 mm, the footprint longitudinal axis

must be parallel to the transport direction of the
printed-circuit board.

The footprint must incorporate solder thieves at the
downstream end.

For packages with leads on four sides, the footprint must
be placed at a 45

angle to the transport direction of the

printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Typical dwell time is 4 seconds at 250

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Manual soldering

Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300

When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320

2002 Oct 08

Philips Semiconductors

Product specification

HF full bridge driver IC

UBA2033

Suitability of surface mount IC packages for wave and reflow soldering methods

Notes

1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum

temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the

"Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods".

2. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder

cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side,
the solder might be deposited on the heatsink surface.

3. If wave soldering is considered, then the package must be placed at a 45

angle to the solder wave direction.

The package footprint must incorporate solder thieves downstream and at the side corners.

4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;

it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is

definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

PACKAGE

SOLDERING METHOD

WAVE

REFLOW

(1)

BGA, HBGA, LFBGA, SQFP, TFBGA

not suitable

suitable

HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN, SMS

not suitable

(2)

suitable

PLCC

(3)

, SO, SOJ

suitable

LQFP, QFP, TQFP

not recommended

(3)(4)

suitable

SSOP, TSSOP, VSO

not recommended

(5)

suitable

2002 Oct 08

Philips Semiconductors

Product specification

HF full bridge driver IC

UBA2033

DATA SHEET STATUS

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

LEVEL

DATA SHEET

STATUS

(1)

PRODUCT

STATUS

(2)(3)

DEFINITION

Objective data

Development

This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

Preliminary data Qualification

This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible product.

III

Product data

Production

This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order to
improve the design, manufacturing and supply. Relevant changes will be
communicated via a Customer Product/Process Change Notification
(CPCN).

DEFINITIONS

Short-form specification

The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition

Limiting values given are in

accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information

Applications that are

described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.

DISCLAIMERS

Life support applications

These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes

Philips Semiconductors

reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status `Production'), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

SCA74

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Contact information

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Printed in The Netherlands

613502/01/pp

Date of release:

2002 Oct 08

Document order number:

9397 750 09574

Document Outline

Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: UBA2033TS

Document Outline

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: UBA2033TS