Philips
Semiconductors
NE5230/SA5230
Low voltage operational amplifier
Product data
Supersedes data of 1994 Aug 31
File under Integrated Circuits, IC11 Handbook
2001 Aug 03
INTEGRATED CIRCUITS
Philips Semiconductors
Product data
NE5230/SA5230
Low voltage operational amplifier
2
2001 Aug 03
853-0942 26836
DESCRIPTION
The NE5230 is a very low voltage operational amplifier that can
perform with a voltage supply as low as 1.8 V or as high as 15 V.
In addition, split or single supplies can be used, and the output will
swing to ground when applying the latter. There is a bias adjusting
pin which controls the supply current required by the device and
thereby controls its power consumption. If the part is operated at
0.9 V supply voltages, the current required is only 110
A when the
current control pin is left open. Even with this low power
consumption, the device obtains a typical unity gain bandwidth of
180 kHz. When the bias adjusting pin is connected to the negative
supply, the unity gain bandwidth is typically 600 kHz while the supply
current is increased to 600
A. In this mode, the part will supply full
power output beyond the audio range.
The NE5230 also has a unique input stage that allows the
common-mode input range to go above the positive and below the
negative supply voltages by 250 mV. This provides for the largest
possible input voltages for low voltage applications. The part is also
internally-compensated to reduce external component count.
The NE5230 has a low input bias current of typically
40 nA, and a
large open-loop gain of 125 dB. These two specifications are
beneficial when using the device in transducer applications. The
large open-loop gain gives very accurate signal processing because
of the large "excess" loop gain in a closed-loop system.
The output stage is a class AB type that can swing to within 100 mV
of the supply voltages for the largest dynamic range that is needed
in many applications. The NE5230 is ideal for portable audio
equipment and remote transducers because of its low power
consumption, unity gain bandwidth, and 30 nV/
Hz noise
specification.
FEATURES
Works down to 1.8 V supply voltages
Adjustable supply current
Low noise
Common-mode includes both rails
V
OUT
within 100 mV of both rails
PIN CONFIGURATION
1
2
3
4
5
6
7
8
NC
IN
+IN
OUTPUT
BIAS ADJ.
V
EE
V
CC
NC
+
N, D Packages
SP00250
Figure 1. Pin Configuration
APPLICATIONS
Portable precision instruments
Remote transducer amplifier
Portable audio equipment
Rail-to-rail comparators
Half-wave rectification without diodes
Remote temperature transducer with 4 to 20 mA output
transmission
ORDERING INFORMATION
DESCRIPTION
TEMPERATURE RANGE
ORDER CODE
DWG #
8-Pin Plastic Small Outline (SO) Package
0
C to +70
C
NE5230D
SOT96-1
8-Pin Plastic Dual In-Line Package (DIP)
0
C to +70
C
NE5230N
SOT97-1
8-Pin Plastic Small Outline (SO) Package
40
C to +85
C
SA5230D
SOT96-1
8-Pin Plastic Dual In-Line Package (DIP)
40
C to +85
C
SA5230N
SOT97-1
Philips Semiconductors
Product data
NE5230/SA5230
Low voltage operational amplifier
2001 Aug 03
3
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RATING
UNIT
V
CC
Single supply voltage
18
V
V
S
Dual supply voltage
9
V
V
IN
Input voltage
1
9 (18)
V
Differential input voltage
1
V
S
V
V
CM
Common-mode voltage (positive)
V
CC
+0.5
V
V
CM
Common-mode voltage (negative)
V
EE
0.5
V
P
D
Power dissipation
2
500
mW
T
j
Operating junction temperature
2
150
C
80Output short-circuit duration to either power supply pin
2, 3
Indefinite
s
T
stg
Storage temperature
65 to 150
C
T
sld
Lead soldering temperature (10sec max)
230
C
NOTES:
1. Can exceed the supply voltages when V
S
7.5 V (15 V).
2. The maximum operating junction temperature is 150
C. At elevated temperatures, devices must be derated according to the package
thermal resistance and device mounting conditions. Derate above 25
C at the following rates:
N package at 9.5 mW/
C
D package at 6.25 mW/
C
3. Momentary shorts to either supply are permitted in accordance to transient thermal impedance limitations determined by the package and
device mounting conditions.
RECOMMENDED OPERATING CONDITIONS
PARAMETER
RATING
UNIT
Single supply voltage
1.8 to 15
V
Dual supply voltage
0.9 to
7.5
V
Common-mode voltage (positive)
V
CC
+0.25
V
Common-mode voltage (negative)
V
EE
0.25
V
Temperature
NE grade
0 to +70
C
SA grade
40 to +85
C
Philips Semiconductors
Product data
NE5230/SA5230
Low voltage operational amplifier
2001 Aug 03
4
DC AND AC ELECTRICAL CHARACTERISTICS
Unless otherwise specified,
0.9V
V
S
+7.5 V or equivalent single supply, R
L
=10 k
, full input common-mode range, over full operating
temperature range.
SYMBOL
PARAMETER
TEST CONDITIONS
BIAS
NE5230/SA5230
UNIT
SYMBOL
PARAMETER
TEST CONDITIONS
BIAS
Min
Typ
Max
UNIT
V
OS
Offset voltage
T
amb
= 25
C
Any
0.4
3
mV
V
OS
Offset voltage
T
amb
= 25
C
Any
3
4
mV
V
OS
Drift
Any
2
5
V/
C
T
amb
= 25
C
High
3
50
I
OS
Offset current
T
amb
= 25
C
Low
3
30
nA
I
OS
Offset current
High
100
nA
Low
60
I
OS
Drift
High
0.5
1.4
nA/
C
I
OS
Drift
Low
0.3
1.4
nA/
C
T
amb
= 25
C
High
40
150
I
Bias current
T
amb
= 25
C
Low
20
60
nA
I
B
Bias current
High
200
nA
Low
150
I
Drift
High
2
4
nA/
C
I
B
Drift
Low
2
4
nA/
C
T
amb
= 25
C
Low
110
160
V
S
=
0 9 V
T
amb
= 25
C
High
600
750
A
V
S
=
0.9 V
Low
250
A
I
S
Supply current
High
800
I
S
Supply current
T
amb
= 25
C
Low
320
550
V
S
=
7 5 V
T
amb
= 25
C
High
1.1
1.6
A
V
S
=
7.5 V
Low
600
A
High
1.7
V
C
Common mode input range
V
OS
6 mV, T
amb
= 25
C
Any
V
0.25
V
+
+0.25
V
V
CM
Common-mode input range
Any
V
V
+
V
CMRR
Common-mode rejection ratio
V
S
=
7.5 V
R
S
= 10 k
; V
CM
=
7.5 V;
T
amb
= 25
C
Any
85
95
dB
j
S
R
S
= 10 k
; V
CM
=
7.5 V
Any
80
T
amb
= 25
C
High
90
105
PSRR
Power supply rejection ratio
T
amb
= 25
C
Low
85
95
dB
PSRR
Power supply rejection ratio
High
75
dB
Low
80
source
V
S
=
7.5 V
Any
4
10
sink
V
S
=
7.5 V
Any
5
15
source
V
S
=
7.5 V
Any
1
5
I
Load current
sink
V
S
=
7.5 V
Any
2
6
mA
I
L
Load current
source
V
S
=
0.9 V; T
amb
= 25
C
High
4
6
mA
sink
V
S
=
0.9 V; T
amb
= 25
C
High
5
7
source
V
S
=
7.5 V; T
amb
= 25
C
High
16
sink
V
S
=
7.5 V; T
amb
= 25
C
High
32
R
L
= 10 k
; T
amb
= 25
C
High
120
2000
V/mV
A
O
Large signal open loop gain
V
S
=
7 5 V
R
L
= 10 k
; T
amb
= 25
C
Low
60
750
A
VOL
Large-signal open-loop gain
V
S
=
7.5 V
High
100
V/mV
Low
50
Philips Semiconductors
Product data
NE5230/SA5230
Low voltage operational amplifier
2001 Aug 03
5
DC AND AC ELECTRICAL CHARACTERISTICS
(Continued)
SYMBOL
PARAMETER
TEST CONDITIONS
BIAS
NE5230/SA5230
UNIT
SYMBOL
PARAMETER
TEST CONDITIONS
BIAS
Min
Typ
Max
UNIT
T
amb
= 25
C +SW
Any
750
800
V
S
=
0 9 V
T
amb
= 25
C SW
Any
750
800
mV
V
S
=
0.9 V
+SW
Any
700
mV
V
O
Output voltage swing
SW
Any
700
V
OUT
Output voltage swing
T
amb
= 25
C +SW
Any
7.30
7.35
V
S
=
7.5 V
T
amb
= 25
C SW
Any
7.32
7.35
V
+SW
Any
7.25
7.30
V
SW
Any
7.30
7.35
SR
Slew rate
T
amb
= 25
C
High
0.25
V/
s
SR
Slew rate
T
amb
= 25
C
Low
0.09
V/
s
BW
Inverting unity gain bandwidth
C
L
= 100 pF; T
amb
= 25
C
High
0.6
MHz
BW
Inverting unity gain bandwidth
C
L
= 100 pF; T
amb
= 25
C
Low
0.25
MHz
M
Phase margin
C
L
= 100 pF; T
amb
= 25
C
Any
70
Deg.
t
S
Settling time
C
L
= 100 pF, 0.1%
High
2
s
t
S
Settling time
C
L
= 100 pF, 0.1%
Low
5
s
V
Input noise
R
S
= 0
; f = 1 kHz
High
30
nV/
Hz
V
INN
Input noise
R
S
= 0
; f = 1 kHz
Low
60
nV/
Hz
THD
Total Harmonic Distortion
V
S
=
7.5 V
A
V
= 1; V
IN
= 500 mV; f = 1 kHz
High
0.003
%
THD
Total Harmonic Distortion
V
S
=
0.9 V
A
V
= 1, V
IN
= 500 mV; f = 1 kHz
High
0.002
%
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