Document Outline
- DESCRIPTION
- FEATURES
- PIN DESCRIPTION
- APPLICATIONS
- ORDERING INFORMATION
- ABSOLUTE MAXIMUM RATINGS
- RECOMMENDED OPERATING CONDITIONS
- DC ELECTRICAL CHARACTERISTICS
- AC ELECTRICAL CHARACTERISTICS
- TEST CIRCUITS
- PACKAGE OUTLINE
- Data sheet status
- Definitions
- Disclaimers
Philips
Semiconductors
SA5223
Wide dynamic range AGC
transimpedance amplifier (150MHz)
Product specification
1995 Oct 24
INTEGRATED CIRCUITS
IC19 Data Handbook
Philips Semiconductors
Product specification
SA5223
Wide dynamic range AGC transimpedance amplifier(150MHz)
2
1995 Oct 24
853-1816 15939
DESCRIPTION
The SA5223 is a wide-band, low-noise transimpedance amplifier
with differential outputs, incorporating AGC and optimized for signal
recovery in wide-dynamic-range fiber optic receivers, such as
SONET. The part is also suited for many other RF and fiber optic
applications as a general purpose gain block.
The SA5223 is the first AGC amplifier to incorporate internal AGC
loop hold capacitor, therefore, no external components are required.
The internal AGC loop enables the SA5223 to effortlessly handle
bursty data over a range of nA to mA of signal current, positive
direction (sinking) only.
FEATURES
Extremely low noise: 1.17pA
Hz
Single 5V supply
Low supply current: 22mA
Large bandwidth: 150MHz
Differential outputs
Internal hold capacitor
Low input/output impedances
High power-supply-rejection ratio: 55dB
Tight transresistance control
High input overload: 4mA
2000V HBM ESD protection
PIN DESCRIPTION
D Package
IN
GND2
OUT
VCC
1
2
3
4
8
7
6
5
OUT
GND4
GND3
GND1
SD00369
APPLICATIONS
OC3 SONET preamp (see AN1431 for detailed analysis
Current-to-voltage converters
Wide-band gain block
Medical and scientific instrumentation
Sensor preamplifiers
Single-ended to differential conversion
Low noise RF amplifiers
RF signal processing
ORDERING INFORMATION
DESCRIPTION
TEMPERATURE RANGE
ORDER CODE
DWG #
8-Pin Plastic Small Outline
-40 to +85
C
SA5223D
SOT96-1
For unpackaged die please contact factory.
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RATING
UNITS
V
CC
Power supply voltage
6
V
T
A
Ambient temperature range
-40 to +85
C
T
J
Junction temperature range
-55 to +150
C
T
STG
Storage temperature range
-65 to +150
C
P
D
Power dissipation T
A
= 25
o
C (still air)
1
0.78
W
I
INMAX
Maximum input current
5
mA
NOTE:
1. Maximum power dissipation is determined by the operating ambient temperature and the thermal resistance
JA
= 158
o
C/W. Derate
6.2mW/
C above 25
C.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
RATING
UNITS
V
CC
Power supply voltage
4.5 to 5.5
V
T
A
Ambient temperature range: SA grade
-40 to +85
C
T
J
Junction temperature range: SA grade
-40 to +105
C
Philips Semiconductors
Product specification
SA5223
Wide dynamic range AGC transimpedance amplifier(150MHz)
1995 Oct 24
3
DC ELECTRICAL CHARACTERISTICS
Typical data and Min and Max limits apply at T
A
= 25
C, and V
CC
= +5V, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
SA5223
UNIT
SYMBOL
PARAMETER
TEST CONDITIONS
Min
Typ
Max
UNIT
V
IN
Input bias voltage
1.3
1.55
1.8
V
V
O
Output bias voltage
2.9
3.2
3.5
V
V
OS
Output offset voltage (V
PIN6
- V
PIN7
)
-200
80
+200
mV
I
CC
Supply current
15
22
29
mA
I
OMAX
Output sink/source current
1.5
2
mA
NOTE: Standard deviations are estimated from design simulations to represent manufacturing variations over the life of the product.
AC ELECTRICAL CHARACTERISTICS
Typical data and Min and Max limits apply at T
A
= 25
C and V
CC
= +5V, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
SA5223
UNIT
SYMBOL
PARAMETER
TEST CONDITIONS
Min
Typ
Max
UNIT
R
T
Transresistance (differential output)
DC tested, R
L
=
, I
IN
= 0-1
A
90
125
160
k
R
T
Transresistance
(single-ended output)
DC tested, R
L
=
, I
IN
= 0-1
A
45
62.5
80
k
R
O
Output resistance
(differential output)
DC tested
140
R
O
Output resistance
(single-ended output)
DC tested
70
f
3dB
Bandwidth (-3dB)
Test Circuit 1
110
150
MHz
R
IN
Input resistance
DC tested
250
C
IN
Input capacitance
1
0.7
pF
C
INT
Input capacitance including Miller multiplied
capacitance
4.0
pF
R/
V
Transresistance power supply sensitivity
V
CC1
= V
CC2
= 5
0.5V
3
%/V
R/
T
Transresistance ambient temperature sensi-
tivity
T
A
= T
A MAX
- T
A MIN
0.09
%/
o
C
I
IN
RMS noise current spectral density (referred
to input)
2
Test Circuit 2, f = 10MHz
1.17
pA
Hz
Integrated RMS noise current over the band-
idth (referred to inp t)
Test circuit 2,
f = 50MHz
7
width (referred to input)
C
S
= 0.1pF
f = 100MHz
12
I
T
C
S
= 0.1 F
f = 150MHz
16
nA
T
f = 50MHz
8
C
S
= 0.4pF
f = 100MHz
13
f = 150MHz
18
PSRR
Power supply rejection ratio (change in V
OS
)
DC Tested,
V
CC
=
0.5V
55
dB
PSRR
Power supply rejection ratio
3
f = 1.0MHz, Test Circuit 3
20
dB
V
OLMAX
Maximum differential output AC voltage
I
i
= 02mA peak AC
800
mV
dR
T
dt
AGC loop time constant parameter
4
10
A to 20
A steps
1
dB/ms
I
INMAX
Maximum input amplitude for output duty
cycle of 50
5%
Test circuit 4
+2
mA
t
r
, t
f
Output rise and fall times
10 90%
2.2
ns
t
D
Group delay
f = 10MHz
2.2
ns
NOTES:
1. Does not include Miller-multiplied capacitance of input device.
2. Noise performance measured differential. Single-ended output noise is higher due to CM noise.
3. PSRR is output referenced and is circuit board layout dependent at higher frequencies. For best performance use a RF filter in V
CC
line.
4. This implies that the SA5223 gain will change 1dB (10%) in the absence of data for 1ms (i.e., can handle bursty data without degrading Bit
Error Rate (BER) for 100,000 cycles at 100MHz).
Philips Semiconductors
Product specification
SA5223
Wide dynamic range AGC transimpedance amplifier(150MHz)
1995 Oct 24
4
TEST CIRCUITS
Test Circuit 1: Bandwidth
NETWORK ANALYZER
S-PARAMETER TEST SET
PORT1
PORT2
VCC
.1uF
.1uF
50
ZO = 50
OUT
OUT
IN DUT
0.1uF
R=1k
50
GND
1
SINGLE-ENDED
GND
2
R
TSE
+
12.4
@
S
21
@
R
IN
,
R
IN
+
1k
)
R
INSS
[
1250
W
ZO = 50
SD00370
500
500
Test Circuit 2: Noise
SPECTRUM ANALYZER
VCC
OUT
OUT
IN DUT
GND
2
GND
1
NE5209
50
.1
F
.1
F
1.0
F
1.0
F
CS
50
SD00371
NETWORK ANALYZER
S-PARAMETER TEST SET
PORT1
PORT2
VCC
.1uF
.1uF
OUT
OUT
IN DUT
GND
2
GND
1
50
CAL
UNBAL.
0.1uF
NC
50
BIAS TEE
5V
NHO300HB
TRANSFORMER
CONVERSION
LOSS = 9dB
100
BAL.
SD00372
Test Circuit 3: PSRR
Test Circuit 4: Duty Cycle Distortion
PULSE GEN
OUT
OUT
DUT
OSCILLOSCOPE
A
B
Meaurement done using
differential wave forms
5V
0.1uF
.1
F
.1
F
GND1
GND2
ZO = 50
ZO = 50
IN
500
500
1k
50
OFFSET
SD00373
50% DUTY CYCLE
Philips Semiconductors
Product specification
SA5223
Wide dynamic range AGC transimpedance amplifier(150MHz)
1995 Oct 24
5
1
2
3
4
8
7
6
5
SD00507
GND
G1
IN
V
CC
OUT
OUTB
G2
GND
PAD CENTER LOCATIONS
X(mm)
Y(mm)
GND1
-0.400
-0.053
IN
-0.400
-0.223
GND2
+0.400
-0.342
OUT
+0.400
-0.046
OUTB
+0.400
+0.154
V
CC
+0.400
+0.380
DIE SIZE
X(mm)
Y(mm)
1.08
1.32
NC
NC
NC
Figure 1. SA5223 Bonding Diagram
Die Sales Disclaimer
Due to the limitations in testing high frequency and other parameters
at the die level, and the fact that die electrical characteristics may
shift after packaging, die electrical parameters are not specified and
die are not guaranteed to meet electrical characteristics (including
temperature range) as noted in this data sheet which is intended
only to specify electrical characteristics for a packaged device.
All die are 100% functional with various parametrics tested at the
wafer level, at room temperature only (25
C), and are guaranteed to
be 100% functional as a result of electrical testing to the point of
wafer sawing only. Although the most modern processes are
utilized for wafer sawing and die pick and place into waffle pack
carriers, it is impossible to guarantee 100% functionality through this
process. There is no post waffle pack testing performed on
individual die.
Since Philips Semiconductors has no control of third party
procedures in the handling or packaging of die, Philips
Semiconductors assumes no liability for device functionality or
performance of the die or systems on any die sales.
Although Philips Semiconductors typically realizes a yield of 85%
after assembling die into their respective packages, with care
customers should achieve a similar yield. However, for the reasons
stated above, Philips Semiconductors cannot guarantee this or any
other yield on any die sales.
PDF 
ZIP