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Электронный компонент: Z0109

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Z0103/07/09 series
Triacs
Rev. 02 -- 12 September 2002
Product data
1.
Product profile
1.1 Description
Passivated triacs in conventional and surface mounting packages. Intended for use in
applications requiring high bidirectional transient and blocking voltage capability.
Available in a range of gate current sensitivities for optimum performance.
Product availability:
Z0103MA; Z0103NA; Z0107MA; Z0107NA; Z0109MA; Z0109NA in SOT54B
Z0103MN; Z0103NN; Z0107MN; Z0107NN; Z0109MN; Z0109NN in SOT223.
1.2 Features
1.3 Applications
2.
Pinning information
s
Blocking voltage to 800 V (NA and NN
types)
s
1 A on-state RMS current.
s
Home appliances
s
Small motor control
s
Fan controllers
s
Small loads in industrial process
control.
Table 1:
Pinning - SOT54B (TO-92), SOT223, simplified outline and symbol
Pin
Description
Simplified outline
Symbol
1
terminal 2 (T2)
SOT54B
(TO-92)
SOT54B (TO-92)
SOT223
2
gate (G)
3
terminal 1 (T1)
1
terminal 1 (T1)
SOT223
2
terminal 2 (T2)
3
gate (G)
4
terminal 2 (T2)
1
3
2
MSB033
4
1
2
3
MSB002 - 1
Top view
MBL300
T2
T1
G
Philips Semiconductors
Z0103/07/09 series
Triacs
Product data
Rev. 02 -- 12 September 2002
2 of 12
9397 750 10102
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
3.
Ordering information
3.1 Ordering options
4.
Limiting values
Table 2:
Ordering information
Part Number
Voltage (V
DRM
)
Gate Sensitivity (I
GT
)
Package
Z0103MA
600 V
3 mA
SOT54B (TO-92)
Z0103NA
800 V
3 mA
SOT54B (TO-92)
Z0107MA
600 V
5 mA
SOT54B (TO-92)
Z0107NA
800 V
5 mA
SOT54B (TO-92)
Z0109MA
600 V
10 mA
SOT54B (TO-92)
Z0109NA
800 V
10 mA
SOT54B (TO-92)
Z0103MN
600 V
3 mA
SOT223
Z0103NN
800 V
3 mA
SOT223
Z0107MN
600 V
5 mA
SOT223
Z0107NN
800 V
5 mA
SOT223
Z0109MN
600 V
10 mA
SOT223
Z0109NN
800 V
10 mA
SOT223
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
V
DRM
repetitive peak off-state voltage
25
C
T
j
125
C
Z0103/07/09MA; Z0103/07/09MN
-
600
V
Z0103/07/09NA; Z0103/07/09NN
-
800
V
V
RRM
repetitive peak reverse voltage
25
C
T
j
125
C
Z0103/07/09MA; Z0103/07/09MN
-
600
V
Z0103/07/09NA; Z0103/07/09NN
-
800
V
I
TSM
non-repetitive peak on-state current
full sine wave; T
j
= 25
C prior to surge;
Figure 2
and
Figure 3
t = 20 ms
-
8
A
t = 16.7 ms
-
8.5
A
I
T(RMS)
RMS on-state current
all conduction angles;
Figure 4
SOT223
T
sp
= 90
C
-
1
A
SOT54B (TO-92)
T
lead
= 50
C
-
1
A
I
2
t
I
2
t for fusing
t
=
10 ms
-
0.35
A
2
s
dI
T
/dt
rate of rise of on-state current
I
TM
= 1.0 A; I
G
= 2 x I
GT
; dI
G
/dt = 100 mA/
s
-
20
A/
s
I
GM
peak gate current
t
p
= 20
s
-
1.0
A
P
GM
peak gate power
-
2.0
W
P
G(AV)
average gate power
over any 20 ms period
-
0.1
W
T
stg
storage temperature
-
40
+150
C
T
j
junction temperature
-
40
+125
C
Philips Semiconductors
Z0103/07/09 series
Triacs
Product data
Rev. 02 -- 12 September 2002
3 of 12
9397 750 10102
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
= conduction angle
n = number of cycles at f = 50 Hz
Fig 1.
Maximum on-state power dissipation as a
function of RMS on-state current; typical
values.
Fig 2.
Maximum permissible non-repetitive peak
on-state current as a function of number of
cycles for sinusoidal currents; typical values.
Fig 3.
Maximum permissible non-repetitive peak
on-state current as a function of surge duration
for sinusoidal currents; typical values.
Fig 4.
Maximum permissible RMS on-state current as
a function of lead temperature and solder point
temperature; typical values.
0
0.4
1.6
0.8
1.2
1.2
0
0.4
0.8
=
180
120
90
60
30
Ptot
(W)
IT(RMS) (A)
003aaa199
10
8
6
4
2
0
1
10
10
2
10
3
n
ITSM
(A)
003aaa200
10
2
10
1
10
-1
ITSM
(A)
IT/
t limit
10
-2
10
-3
10
-4
10
-5
ts (s)
003aaa207
SOT223
(Tsp)
SOT54B
(Tlead)
150
50
100
0
Tlead, Tsp (
C)
IT(RMS)
(A)
0
1.2
0.8
0.4
003aaa201
Philips Semiconductors
Z0103/07/09 series
Triacs
Product data
Rev. 02 -- 12 September 2002
4 of 12
9397 750 10102
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5.
Thermal characteristics
5.1 Transient thermal impedance
Table 4:
Thermal characteristics
Symbol
Parameter
Conditions
Min Typ Max Unit
R
th(j-sp)
thermal resistance from junction to solder
point for SOT223
Figure 5
-
-
25
K/W
R
th(j-lead)
thermal resistance from junction to lead for
SOT54B (TO-92)
Figure 5
-
-
60
K/W
R
th(j-a)
thermal resistance from junction to ambient
SOT223
minimum footprint; mounted on a PCB
-
60
-
K/W
SOT54B (TO-92)
vertical in free air
-
150 -
K/W
for SOT54B (TO-92)
for SOT223
Fig 5.
Transient thermal impedance from junction to lead and junction to solder point as a function of pulse
duration.
a
1
10
10
2
10
3
10
-1
10
-2
10
-3
10
-4
10
-5
tp (s)
10
1
10
-1
10
-2
10
-3
10
-4
SOT223
SOT54B
003aaa206
a
Z
th j
lead
(
)
R
th j
lead
(
)
---------------------------
=
a
Z
th j
sp
(
)
R
th j
sp
(
)
-----------------------
=
Philips Semiconductors
Z0103/07/09 series
Triacs
Product data
Rev. 02 -- 12 September 2002
5 of 12
9397 750 10102
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
6.
Characteristics
Table 5:
Characteristics
T
j
= 25
C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; R
L
= 30
; T2+ G+; T2+ G
-
; T2
-
G
-
;
Figure 9
Z0103MA/MN/NA/NN
-
-
3
mA
Z0107MA/MN/NA/NN
-
-
5
mA
Z0109MA/MN/NA/NN
-
-
10
mA
Z0103MA/MN/NA/NN
V
D
= 12 V; R
L
= 30
; T2
-
G+;
Figure 9
-
-
5
mA
Z0107MA/MN/NA/NN
-
-
7
mA
Z0109MA/MN/NA/NN
-
-
10
mA
I
L
latching current
V
D
= 12 V; R
L
= 30
; T2+ G+; T2
-
G
-
; T2
-
G+;
Figure 7
Z0103MA/MN/NA/NN
-
-
7
mA
Z0107MA/MN/NA/NN
-
-
10
mA
Z0109MA/MN/NA/NN
-
-
15
mA
Z0103MA/MN/NA/NN
V
D
= 12 V; R
L
= 30
; T2+ G
-
;
Figure 7
-
-
15
mA
Z0107MA/MN/NA/NN
-
-
20
mA
Z0109MA/MN/NA/NN
-
-
25
mA
I
H
holding current
I
T
= 50 mA;
Figure 8
Z0103MA/MN/NA/NN
-
-
7
mA
Z0107MA/MN/NA/NN
-
-
10
mA
Z0109MA/MN/NA/NN
-
-
10
mA
V
T
on-state voltage
Figure 6
-
1.3
1.6
V
V
GT
gate trigger voltage
V
D
= 12 V; R
L
= 30
; T
j
= 25
C;
Figure 11
-
-
1.3
V
V
D
= V
DRM
; R
L
= 3.3 k
; T
j
= 125
C;
Figure 11
0.2
-
-
V
I
D
off-state leakage current
V
D
= V
DRM(max)
; V
R
= V
RRM(max);
T
j
= 125
C
-
-
500
A
Dynamic characteristics
dV
D
/dt
critical rate of rise of
off-state voltage
V
D
= 0.67 V
DRM(max)
; T
j
= 110
C; exponential
waveform; gate open;
Figure 10
Z0103MA/MN/NA/NN
10
-
-
V/
s
Z0107MA/MN/NA/NN
20
-
-
V/
s
Z0109MA/MN/NA/NN
50
-
-
V/
s
dV
com
/dt
critical rate of change of
commutating voltage
V
D
= 400 V; I
T
= 1 A; T
j
= 110
C;
dI
com
/dt = 0.44 A/ms; gate open
Z0103MA/MN/NA/NN
0.5
-
-
V/
s
Z0107MA/MN/NA/NN
1
-
-
V/
s
Z0109MA/MN/NA/NN
2
-
-
V/
s