HIGH SPEED PIN PHOTODIODES
SPECIFICATIONS
Responsivity:
0.50 A/W min., 0.62 A/W typ. @ 900nm
Part Number
Total
Area
Active
Area
Dark Current
1
at 50V
Breakdown
Voltage
2
at 10A
Capacitance
3
Typ.
NEP
4
Max
Linear
Current
5
Response
Time
6
at 60V
Typ.
Max.
Typ.
at 0V
at 50V
Typ.
Typ.
Typ.
(mm
2
) (in) (nA) (nA)
(V)
(pF) (pF) (W/
Hz)
(mA) (ns)
SD 020-11-33-211
0.20
0.020
(dia).
0.5 2.0 75 2.1 0.3 2.4x10
-14
0.02
1
SD 041-11-33-211
0.85
0.040
x
0.033
2.0
8.0
75
5.6
0.5
4.8x10
-14
0.08
2
SD 076-11-31-211
2.91
0.105
x
0.043
8.0 30 75 17 2.5
1.0x10
-13
0.29 2
SD 100-11-31-221
5.1
0.100
(dia.)
12
50
75
28
3.5
1.3x10
-13
0.51
2
SD 172-11-31-221
15
0.185
x
0.125
35 147 75 82 10 2.0x10
-13
1.5 2
SD 200-11-31-241
20.3
0.200
(dia).
50
200
75
110
11
3.0x10
-13
2.03
2
SD 290-11-31-241
42.6
0.300
x
0.220
110 425 75 235 22 3.8x10
-13
4.26 3
* All values at 23C
1. Dark Current varies with temperature as follows; for T23
C, I
DT
= I
D23
* 1.09
T
, where
T=(T-23) and I
D23
is the dark current at 23
C.
2. Typical values listed. Minimum value shall be 50V.
3. Typical values listed. Maximum value shall be 20% higher than the typical.
4. Test conditions are V
B
= -50V, and 950 nm.
5. In photovoltaic mode. Maximum linear current specifies the level at which the output current characteristic deviates more than 10% from the
straight line. The short circuit current saturates at approximately 10 times this level.
6. Response Time (transition time between 10% and 90% of the output signal amplitude) measured at 670 nm with a 50
load. Shorter wavelengths
will result in faster rise and fall times.
Storage and Operating Temperature Range for all photodiodes is -40
C to 110C
PDF 
ZIP
