SD150-14-006
16/32Mbps
Si PIN Photodiode Chip
The SD150-14-006 chip is a silicon pin photodiode that has been
specifically developed for the price-sensitive OEM optical communication
applications, including IrDA-compatible transceivers, fiber-optic LAN,
VCSEL-based IR links, and instrumentation. Designed to be fully depleted at
low voltages, the device offers exceptionally low capacitance and fast
response. The rise and fall times have been optimized for digital transmission,
and the signal tailing, a common problem for photodiodes operating at low
bias, have been greatly reduced. Typical data transfer speeds are 16Mbps and
up to 32Mbps on selected devices.
The device features excellent quantum efficiency, exceeding 80% between
500 and 850nm, offering higher sensitivity than many comparable devices,
thus extending the effective operating range of the IrDA-enabled peripherals.
The SD150-14-006 is ideally suited for such demanding applications as
Very Fast IR (VFIR) links for high-resolution digital cameras, scanners,
portable storage devices, personal computers and PDAs, and infrared LAN
access nodes. The device can match the speeds of USB ports, thus offering
attractive alternative of transferring large amounts of data to and from a
computer at high rates without a cable connection and making peripheral
devices truly portable. Low operating voltage makes it also a perfect choice for
battery-powered applications.
Advanced Photonix can custom assemble the SD150-14-006 into OEM
IrDA transceiver modules. Contact factory for details.
Electro-Optical Characteristics
@ +23, V
r
= 2.5V, unless otherwise noted
Parameter Min Typ. Max.
Conditions
Dark Current
1 nA
3 nA
V
r
= 2.5V
1.5 nA
5 nA
V
r
= 5.0V
Forward Voltage
0.65 V
0.85 V
I
p
= 3mA
Breakdown Voltage
15 V
25 V
NA
I
r
= 10A
Capacitance
8 pF
9.5 pF
V
r
= 2.5V, f = 4MHz
Rise Time
7.5 ns
10 ns
10-90%,
= 850nm, R
l
= 50
Fall Time
7.5 ns
19 ns
90-10%,
= 850nm, R
l
= 50
Responsivity 0.50A/W
0.55A/W
= 850nm
Features
2.3mm
2
active area
High speed
Reduced turn-off tail
Excellent QE
Low bias voltage (2.5V)
Low noise
Low capacitance
Wide operating temp. range
Low cost
Applications
Very Fast IR links up to
16/32 Mbps
Portable peripherals
Portable instrumentation
IR transceiver modules
API reserves the right to change specifications without notification.
Small signal response
R
l
= 50
,
source: 850nm VCSEL
Rev. 27 Feb, 2001
Preliminary
Spectral Responsivity @ V
b
=
2.5V, T
a
=
23C
0
0.1
0.2
0.3
0.4
0.5
0.6
200
300
400
500
600
700
800
900
1000
1100
Wavelength (nm)
Res
pons
i
v
i
t
y
(A
/
W
)
Typical Performance Graphs
Mechanical Characteristics
Die Size
0.070 x 0.070 in. (1.77 x 1.77 mm)
Active Area
0.060 x 0.060 in. (1.53 x 1.53 mm)
Die Thickness
0.015 in. (0.38 mm)
Front Anode Contact
0.014 x 0.010 in., Al
Front Cathode Ring Width
0.005 in., Al
Cathode Backside Contact
Au
A/R Coating
Thermal SiO
2
,
= 1465+/-50
Recommendations
Attachment method
conductive epoxy
Wire bonding
aluminum, gold
Absolute Maximum Ratings*
Storage Temperature
-55C to +150C
Operating Temperature
-40C to +125C
Reverse Bias Voltage
25V
*Operating beyond these limits may cause permanent damage to the device.
1240 Avenida Acaso, Camarillo, CA 93012
(805) 987-0146 Fax (805) 484-9935
www.advancedphotonix.com
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