BLUE ENHANCED PIN PHOTODIODES
SPECIFICATIONS
Responsivity:
0.20 A/W min., 0.23 A/W typ. @ 450nm
Part Number
Total
Area
Active
Area
Shunt
Resistance
1
Dark Current
1
at 5V
Breakdown
Voltage
2
at 10A
Capacitance
3
Typ.
NEP
4
Max
Linear
Current
5
Response
Time
6
at 5V
Min.
Typ.
Max.
Typ.
at 0V
at 5V
Typ.
Typ.
Typ.
(mm
2
) (in) (M
)
(nA) (nA) (V) (pF) (pF) (W/
Hz)
(mA) (ns)
SD 041-12-22-011
isolated 211
0.85
0.040
x
0.033
1500 0.3 1.0 50 14 5 1.7x10
-14
0.09
5
SD 076-12-22-011
isolated -211
2.91
0.105
x
0.043
450
0.9
3.5
50
50
15
3.6x10
-14
0.29
11
SD 100-12-22-021
isolated -221
5.1
0.100
(dia.)
300 1.6 6.4 50 87 26
4.2x10
-14
0.51 15
SD 172-12-22-021
isolated -221
15
0.185
x
0.125
100
5.0
20
50
255
75
6.4x10
-14
1.5
30
SD 200-12-22-041
isolated -241
20.3
0.200
(dia).
70 6.5
26 50 345
102
8.9x10
-14
2.03 45
SD 290-12-22-041
isolated -241
42.6
0.300
x
0.220
35
13
52
50
725
213
1.2x10
-13
4.26
70
SD 445-12-22-305
100
0.394
x
0.394
15 30
120 50 1700
500
1.9x10
-13
10.0 200
* All values at 23C
1. Dark Current and Shunt Resistance vary with temperature as follows; for T23
C, I
DT
= I
D23
* 1.09
T
,
R
SHT
= R
SH23
* 0.9
T
, where
T=(T-23) and I
D23
and R
SH23
are values at 23
C.
2. Typical values listed. Minimum value shall be 50% of typical.
3. Typical values listed. Maximum value shall be 20% higher than the typical.
4. Test conditions are minimum shunt resistance and 450 nm.
5. In photovoltaic mode. Maximum linear current specifies the level at which the output current characteristic deviates more than 10% from the
straight line. The short circuit current saturates at approximately 10 times this level.
6. Response Time (transition time between 10% and 90% of the output signal amplitude) measured at 670 nm with a 50
load. Shorter
wavelengths will result in faster rise and fall times.
Storage and Operating Temperature Range for all photodiodes is -40
C to 110C, except for the SD
445-12-22-305, which is
20
C to 75C.
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