ULTRA LOW NOISE PIN PHOTODIODES
SPECIFICATIONS
Responsivity:
0.32 A/W min., 0.38 A/W typ. @ 632.8nm; 0.50 A/W min., 0.62 A/W typ. @ 900nm
Part Number
Total
Area
Active
Area
Shunt
Resistance
1
Dark Current
1
at 5V
Breakdown
Voltage
2
at 10A
Capacitance
3
Typ.
NEP
4
Max
Linear
Current
5
Response
Time
6
at 5V
Min.
Typ.
Max.
Typ.
at 0V
at 5V
Typ.
Typ.
Typ.
(mm
2
) (in) (M
)
(nA) (nA) (V) (pF) (pF) (W/
Hz)
(mA) (ns)
SD 057-14-21-011
1.67
0.051
x
0.051
1600 0.1 0.5 50 28 9 1.0x10
-14
0.17 10
SD 076-14-21-011
isolated -211
2.91
0.105
x
0.043
900
0.2
0.9
50
50
15
1.4x10
-14
0.29
11
SD 100-14-21-021
isolated -221
5.1
0.100
(dia.)
600 0.3 1.6 50 87 26
1.8x10
-14
0.51 15
SD 172-14-21-021
isolated -221
15
0.185
x
0.125
200
1.0
5.0
50
255
76
3.0x10
-14
1.5
30
SD 200-14-21-041
isolated -241
20.3
0.200
(dia).
140 1.3 6.5 50 345
102
3.8x10
-14
2.03 45
SD 290-14-21-041
isolated -241
42.6
0.300
x
0.220
65
2.5
13
50
725
217
5.6x10
-14
4.76
70
SD 445-14-21-305
100
0.394
x
0.394
30 6.0
30 50 1700
500
8.6x10
-14
10.0 200
* All values at 23C
1. Dark Current and Shunt Resistance vary with temperature as follows; for T23
C, I
DT
= I
D23
* 1.09
T
,
R
SHT
= R
SH23
* 0.9
T
, where
T=(T-23) and I
D23
and R
SH23
are values at 23
C.
2. Typical values listed. Minimum value shall be 50% of typical.
3. Typical values listed. Maximum value shall be 20% higher than the typical.
4. Test conditions are V
B
= -5V, and 950 nm.
5. In photovoltaic mode. Maximum linear current specifies the level at which the output current characteristic deviates more than 10% from the
straight line. The short circuit current saturates at approximately 10 times this level.
6. Response Time (transition time between 10% and 90% of the output signal amplitude) measured at 670 nm with a 50
load. Shorter wavelengths
will result in faster rise and fall times.
7. Storage and Operating Temperature Range for all photodiodes is -40
C to 110C, except for the SD
445-14-21-305, which is 20
C to 75C.
PDF 
ZIP
