BI-CELL AND QUADRANT PHOTODIODES
SPECIFICATIONS (PER ELEMENT)
Responsivity:
0.32 A/W min., 0.38 A/W typ. @ 632.8nm; 0.50 A/W min., 0.62 A/W typ. @ 900nm
Non-uniformity between elements:
5% deviation max., 1% typ.
``
Part Number
Total
Area
per
Element
Shunt
Resistance
1
Dark Current
1
at 5V
Breakdown
Voltage
2
at 10A
Capacitance
3
Typ.
NEP
4
at 632.8nm
NEP
5
at 950nm
Light
6
Power
Density
Response
Time
7
at 10V
Min.
Typ.
Max. Typ.
at
0V
At
10V
Typ. Typ. Typ. Typ.
(mm
2
)
(M
)
(nA) (nA) (V) (pF) (pF) (W/
Hz) (W/Hz)
(mW/cm
2
) (ns)
Bi-Cell (Two Element Detectors)
SD 066-24-21-011
0.67
500
0.2
1.0
50
15
3
2.1x10
-14
1.2x10
-14
10
7
SD 113-24-21-021
3.1
250
0.9
5.0
50
60
13
4.3x10
-14
2.5x10
-14
10
8
SD 160-24-21-021
2.3
300
0.7
3.5
50
45
9
4.3x10
-14
2.5x10
-14
10
7
SD
385-24-21-041
18.5 40 6.0
31.0 50 390 85
5.0x10
-14
2.9x10
-14
10
32
Quadrant (Four Element Detectors)
SD 055-23-21-011
0.25
800
0.1
0.4
50
15
3
2.1x10
-14
1.2x10
-14
10
7
SD 085-23-21-021
2.25
350
0.6
3.5
50
45
9
4.3x10
-14
2.5x10
-14
10
7
SD 118-23-21-021
1.61
450
0.5
2.5
50
35
7
4.3x10
-14
2.5x10
-14
10
7
SD 197-23-21-041
4.79
175
1.4
7.5
50
100
20
4.3x10
-14
2.5x10
-14
10
8
SD
225-23-21-040 5.4 100 1.2 6.5 50 102 24 4.3x10
-14
2.5x10
-14
10
8
SD 380-23-21-051
17.8
100
5.0
27.0
50
375
75
5.2x10
-14
3.0x10
-14
10
30
* All specifications are per element. All values at 23C
1. Dark Current and Shunt Resistance vary with temperature as follows; for T23
C, I
DT
= I
D23
* 1.09
T
,
R
SHT
= R
SH23
* 0.9
T
, where
T=(T-23) and I
D23
and R
SH23
are values at 23
C.
2. Typical values listed. Minimum value shall be 50% of typical.
3. Typical values listed. Maximum value shall be 20% higher than the typical.
4. Test conditions are V
B
= 10mV, and 632.8 nm.
5. Test conditions are V
B
= 10mV, and 950 nm.
6. In photovoltaic mode. Maximum linear current specifies the level at which the output current characteristic deviates more than 10% from the
straight line. The short circuit current saturates at approximately 10 times this level.
7. Response Time (transition time between 10% and 90% of the output signal amplitude) measured at 670 nm with a 50
load. Shorter wavelengths
will result in faster rise and fall times.
Storage and Operating Temperature Range for all photodiodes is -40
C to 110C, except for the SD
225-23-21-040, which is 25
C to 100C.
PDF 
ZIP
