Planeta
JSC Planeta, 2/13, Fedorovsky Ruchei, Veliky Novgorod, 173004, Russia
E l e c t r o n i c c o m p a n y
Ph/Fax: +7 (81622) 3-17-36, 3-32-86 E-mail: planeta@novgorod.net
http://www.novgorod.net/~planeta
2N6027
Silicon programmable unijunction transistor (PUT
s)
in package TO-92
2.5
0.7max
5.2
1.6
0.45max
14.5
4.2
5.2
1
2
3
Ratings (T
A
= 25C)
Symbol
Parameter, units
Limits
V
AK
*Anode to cathode voltage, V
40
V
GKF
*Gate to cathode forward voltage, V
40
V
GKR
*Gate to cathode reverse voltage, V
-5
V
GAR
*Gate to anode reverse voltage, V
40
I
T
*DC forward anode current, mA
150
I
TRM
Repetitive peak forward current, A
100
s Pulse width, 1% duty cycle
*20
s Pulse width, 1% duty cycle
1
2
P
T
*Power dissipation, mW
300
* - Anode positive, R
GA
=1000
;
Anode negative, R
GA
=open
Electrical Characteristics (T
A
= 25C)
Symbol
Parameter, units,
Limits
test conditions
min
typ
max
I
P
Peak current,
A,
V
S
=10V, R
G
=10k
4
5
I
GAO
Gate to anode leakage current, nA,
V
S
=40V, cathode open
1
10
I
GKS
Gate to cathode leakage current, nA,
V
S
=40V, anode to cathode shorted
5
50
V
F
Forward voltage, V,
I
F
=50mA Peak
0.8
1.5
V
O
Peak output voltage, V,
V
G
=20V, C
C
=0.2
F
6
11
V
T
Offset voltage, V
V
S
=10V, R
G
=10k
0.2
0.35
0.6
I
V
Valley current,
A,
V
S
=10V, R
G
=10k
70
150
t
R
Pulse voltage rise time, ns
V
B
=20V, C
C
=0.2
F
40
80
Pinouts:
1- Cathode, 2- Gate, 3- Anode
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