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Электронный компонент: BF620

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PLANETA JSC, 2/13 Fedorovsky Ruchei, Veliky Novgorod, 173004, Russia Ph./Fax: +7-816-2231736
E-mail: planeta@novgorod.net
ї August 2001 Rev 1 http:
//www.novgorod.net/~planeta

PLANETA
The Small-signal
NPN Silicon High Voltage
Medium-Power Transistor
DESCRIPTION
The BF620 is an NPN silicon epitaxial transistor designed for
application as a video output to drive color CRT, telephony, professional
communication equipment and other high voltage applications.
It has dynamic range and good current characteristic.
This high voltage transistor in 3-Pin mini power plastic package SOT89
offers superior quality and performance at low cost.
FEATURES
Low Saturation Voltages
V
CE(sat)
= 0.6 V
V
BE(sat)
= 0.9 V
High Breakdown Voltages
V
(BR)CBO
= 300 V
V
(BR)CEO
= 300 V
Low Collector Current
I
C
= 50 mA
Complementary to BF621
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 њC)
Rating
Symbol
Value
Unit
Collector - Emitter Voltage
V
CEO
300
V
Collector - Base Voltage
V
CBO
300
V
Emitter - Base Voltage
V
EBO
5
V
Collector Current
I
C
50
mA
Peak Collector Current
I
CM
100
mA
Collector Dissipation
P
C
1.0
W
Junction Temperature
T
JMAX
150
њC
Operating Junction Temperature Range
T
OPR
-60 to +100
њC
Storage Temperature Range
T
STG
-65 to +150
њC
ORDERING INFORMATION
Device
Marking
Package
Quantity
Packing Style
BF620
DC
SOT-89
5 Kpcs / plastic
bags
In bulk
BF620-T1
DC
SOT-89
1 Kpcs / Reel
Embossed tape 12-mm wide 7''
dia. Pin 2 (Collector) towards the
windung. Perforation on the right.
BF620
SOT89
JEDEC TO-243
EIAJ SC-62
GOST KT-47

Weight: 0.055g
1
2
3
1 - Base
2 - Collector
3 - Emitter
2
BF620
Ph./Fax: +7-816-2231736 PLANETA JSC, 2/13 Fedorovsky Ruchei, Veliky Novgorod, 173004, Russia
E-mail: planeta@novgorod.net
http:
//www.novgorod.net/~planeta ї August 2001 Rev 1
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25 њC unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DC CHARACTERISTICS
Collector - Base Cutoff Current,
I
E
= 0mA, V
CB
=200V
I
CBO
-
-
10
nA
Emitter - Base Cutoff Current,
I
C
= 0mA, V
EB
= 5V
I
EBO
-
-
50
nA
Collector - Base Breakdown Voltage,
I
C
= 10
A, I
E
= 0mA
V
(BR)CBO
300
-
-
V
Collector - Emitter Breakdown Voltage,
I
C
= 1mA, I
B
= 0mA
V
(BR)CEO
300
-
-
V
Emitter - Base Breakdown Voltage,
I
E
=100
A, I
C
= 0mA
V
(BR)CEO
5
-
-
V
DC Current Gain,
I
C
= 25mA, V
CE
= 20V
h
FE
50
-
-
-
AC CHARACTERISTICS
Collector - Emitter Saturation Voltage,
I
C
= 30mA, I
B
= 5mA
V
CE(sat)
-
-
0.6
V
Base - Emitter Saturation Voltage,
I
C
= 20mA, I
B
= 2mA
V
BE(sat)
-
-
0.9
V
Collector - Base Capacitance,
I
E
= 0mA, V
CB
= 30V, f=1MHz
C
OB
-
-
1.6
pF
Current Gain - Bandwidth Product,
I
C
= 10mA, V
CE
= 10V
f
T
60
-
-
MHz
PACKAGE DIMENSIONS of BF620 in mm
B
4.50,1
1.9max
0
.
8
m
i
n
2
.
5
0
.
1
4
0
.
2
5
1.5
3.0
1.50.1
0.4
0.50.05
0.40.05
1
2
3
B
PLASTIC CASE KT-47