BD744, BD744A, BD744B, BD744C
PNP SILICON POWER TRANSISTORS
P R O D U C T I N F O R M A T I O N
1
AUGUST 1978 - REVISED MARCH 1997
Copyright 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
q
Designed for Complementary Use with the
BD743 Series
q
90 W at 25C Case Temperature
q
15 A Continuous Collector Current
q
20 A Peak Collector Current
q
Customer-Specified Selections Available
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
absolute maximum ratings
at 25C case temperature (unless otherwise noted)
NOTES: 1. This value applies for t
p
0.3 ms, duty cycle
10%.
2. Derate linearly to 150C case temperature at the rate of 0.72 W/C.
3. Derate linearly to 150C free air temperature at the rate of 16 mW/C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= -0.4 A, R
BE
= 100
,
V
BE(off)
= 0, R
S
= 0.1
, V
CC
= -20 V.
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (I
E
= 0)
BD744
BD744A
BD744B
BD744C
V
CBO
-50
-70
-90
-110
V
Collector-emitter voltage (I
B
= 0)
BD744
BD744A
BD744B
BD744C
V
CEO
-45
-60
-80
-100
V
Emitter-base voltage
V
EBO
-5
V
Continuous collector current
I
C
-15
A
Peak collector current (see Note 1)
I
CM
-20
A
Continuous base current
I
B
-5
A
Continuous device dissipation at (or below) 25C case temperature (see Note 2)
P
tot
90
W
Continuous device dissipation at (or below) 25C free air temperature (see Note 3)
P
tot
2
W
Unclamped inductive load energy (see Note 4)
LI
C
2
90
mJ
Operating free air temperature range
T
A
-65 to +150
C
Operating junction temperature range
T
j
-65 to +150
C
Storage temperature range
T
stg
-65 to +150
C
Lead temperature 3.2 mm from case for 10 seconds
T
L
260
C
BD744, BD744A, BD744B, BD744C
PNP SILICON POWER TRANSISTORS
2
AUGUST 1978 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 s, duty cycle
2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
= -30 mA
I
B
= 0
(see Note 5)
BD744
BD744A
BD744B
BD744C
-45
-60
-80
-100
V
I
CBO
Collector cut-off
current
V
CE
= -50 V
V
CE
= -70 V
V
CE
= -90 V
V
CE
= -110 V
V
CE
= -50 V
V
CE
= -70 V
V
CE
= -90 V
V
CE
= -110 V
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
T
C
= 125C
T
C
= 125C
T
C
= 125C
T
C
= 125C
BD744
BD744A
BD744B
BD744C
BD744
BD744A
BD744B
BD744C
-0.1
-0.1
-0.1
-0.1
-5
-5
-5
-5
mA
I
CEO
Collector cut-off
current
V
CE
= -30 V
V
CE
= -60 V
I
B
= 0
I
B
= 0
BD744/744A
BD744B/744C
-0.1
-0.1
mA
I
EBO
Emitter cut-off
current
V
EB
= -5 V
I
C
= 0
-0.5
mA
h
FE
Forward current
transfer ratio
V
CE
= -4 V
V
CE
= -4 V
V
CE
= -4 V
I
C
= -1 A
I
C
= -5 A
I
C
= -15 A
(see Notes 5 and 6)
40
20
5
150
V
CE(sat)
Collector-emitter
saturation voltage
I
B
= -0.5 A
I
B
= -5 A
I
C
= -5 A
I
C
= -15 A
(see Notes 5 and 6)
-1
-3
V
V
BE
Base-emitter
voltage
V
CE
= -4 V
V
CE
= -4 V
I
C
= -5 A
I
C
= -15 A
(see Notes 5 and 6)
-1
-3
V
h
fe
Small signal forward
current transfer ratio
V
CE
= -10 V
I
C
= -1 A
f = 1 kHz
25
|
h
fe
|
Small signal forward
current transfer ratio
V
CE
= -10 V
I
C
= -1 A
f = 1 MHz
5
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
JC
Junction to case thermal resistance
1.4
C/W
R
JA
Junction to free air thermal resistance
62.5
C/W
resistive-load-switching characteristics at 25C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
t
d
Delay time
I
C
= -5 A
V
BE(off)
= 4.2 V
I
B(on)
= -0.5 A
R
L
= 6
I
B(off)
= 0.5 A
t
p
= 20 s, dc
2%
20
ns
t
r
Rise time
120
ns
t
s
Storage time
600
ns
t
f
Fall time
300
ns
3
AUGUST 1978 - REVISED MARCH 1997
BD744, BD744A, BD744B, BD744C
PNP SILICON POWER TRANSISTORS
P R O D U C T I N F O R M A T I O N
TYPICAL CHARACTERISTICS
Figure 1.
Figure 2.
MAXIMUM SAFE OPERATING REGIONS
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
-01
-10
-10
-100
h
FE
- DC Current Gain
10
100
1000
TCS638AA
T
C
= 125C
T
C
= 25C
T
C
= -55C
V
CE
= -4 V
t
p
= 300 s, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
-01
-10
-10
-100
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
-001
-01
-10
-10
TCS638AB
T
C
= -55C
T
C
= 25C
T
C
= 125C
t
p
= 300s, duty cycle < 2%
I
C
I
B
= 10
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
V
CE
- Collector-Emitter Voltage - V
-10
-10
-100
-1000
I
C
- Collector Current - A
-001
-01
-10
-10
-100
SAS638AA
BD744
BD744A
BD744B
BD744C
t
p
= 1 ms,
d = 0.1 = 10%
t
p
= 10 ms,
d = 0.1 = 10%
t
p
= 50 ms,
d = 0.1 = 10%
DC Operation
BD744, BD744A, BD744B, BD744C
PNP SILICON POWER TRANSISTORS
4
AUGUST 1978 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
THERMAL INFORMATION
Figure 4.
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
T
C
- Case Temperature - C
0
25
50
75
100
125
150
P
tot
- Maximum Power Dissipation - W
0
10
20
30
40
50
60
70
80
90
100
TIS637AA
5
AUGUST 1978 - REVISED MARCH 1997
BD744, BD744A, BD744B, BD744C
PNP SILICON POWER TRANSISTORS
P R O D U C T I N F O R M A T I O N
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
TO220
ALL LINEAR DIMENSIONS IN MILLIMETERS
1,23
1,32
4,20
4,70
1
2
3
0,97
0,61
see Note C
see Note B
10,0
10,4
2,54
2,95
6,0
6,6
14,55
15,90
12,7
14,1
3,5
6,1
1,07
1,70
2,34
2,74
4,88
5,28
3,71
3,96
0,41
0,64
2,40
2,90
VERSION 2
VERSION 1
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MDXXBE
PDF 
ZIP