BD645, BD647, BD649, BD651
NPN SILICON POWER DARLINGTONS
P R O D U C T I N F O R M A T I O N
1
MAY 1993 - REVISED MARCH 1997
Copyright 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
q
Designed for Complementary Use with
BD646, BD648, BD650 and BD652
q
62.5 W at 25C Case Temperature
q
8 A Continuous Collector Current
q
Minimum h
FE
of 750 at 3 V, 3 A
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
absolute maximum ratings
at 25C case temperature (unless otherwise noted)
NOTES: 1. This value applies for t
p
0.3 ms, duty cycle
10%.
2. Derate linearly to 150C case temperature at the rate of 0.4 W/C.
3. Derate linearly to 150C free air temperature at the rate of 16 mW/C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= 5 mA, R
BE
= 100
,
V
BE(off)
= 0, R
S
= 0.1
, V
CC
= 20 V.
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (I
E
= 0)
BD645
BD647
BD649
BD651
V
CBO
80
100
120
140
V
Collector-emitter voltage (I
B
= 0)
BD645
BD647
BD649
BD651
V
CEO
60
80
100
120
V
Emitter-base voltage
V
EBO
5
V
Continuous collector current
I
C
8
A
Peak collector current (see Note 1)
I
CM
12
A
Continuous base current
I
B
0.3
A
Continuous device dissipation at (or below) 25C case temperature (see Note 2)
P
tot
62.5
W
Continuous device dissipation at (or below) 25C free air temperature (see Note 3)
P
tot
2
W
Unclamped inductive load energy (see Note 4)
LI
C
2
50
mJ
Operating junction temperature range
T
j
-65 to +150
C
Storage temperature range
T
stg
-65 to +150
C
Lead temperature 3.2 mm from case for 10 seconds
T
L
260
C
BD645, BD647, BD649, BD651
NPN SILICON POWER DARLINGTONS
2
MAY 1993 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 s, duty cycle
2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
electrical characteristics at 25C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
= 30 mA
I
B
= 0
(see Note 5)
BD645
BD647
BD649
BD651
60
80
100
120
V
I
CEO
Collector-emitter
cut-off current
V
CE
= 30 V
V
CE
= 40 V
V
CE
= 50 V
V
CE
= 60 V
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
BD645
BD647
BD649
BD651
0.5
0.5
0.5
0.5
mA
I
CBO
Collector cut-off
current
V
CB
= 60 V
V
CB
= 80 V
V
CB
= 100 V
V
CB
= 120 V
V
CB
= 40 V
V
CB
= 50 V
V
CB
= 60 V
V
CB
= 70 V
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
T
C
= 150C
T
C
= 150C
T
C
= 150C
T
C
= 150C
BD645
BD647
BD649
BD651
BD645
BD647
BD649
BD651
0.2
0.2
0.2
0.2
2.0
2.0
2.0
2.0
mA
I
EBO
Emitter cut-off
current
V
EB
= 5 V
I
C
= 0
(see Notes 5 and 6)
5
mA
h
FE
Forward current
transfer ratio
V
CE
= 3 V
I
C
= 3 A
(see Notes 5 and 6)
750
V
CE(sat)
Collector-emitter
saturation voltage
I
B
= 12 mA
I
B
= 50 mA
I
C
= 3 A
I
C
= 5 A
(see Notes 5 and 6)
2
2.5
V
V
BE(sat)
Base-emitter
saturation voltage
I
B
= 50 mA
I
C
= 5 A
(see Notes 5 and 6)
3
V
V
BE(on)
Base-emitter
voltage
V
CE
= 3 V
I
C
= 3 A
(see Notes 5 and 6)
2.5
V
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
JC
Junction to case thermal resistance
2.0
C/W
R
JA
Junction to free air thermal resistance
62.5
C/W
3
MAY 1993 - REVISED MARCH 1997
BD645, BD647, BD649, BD651
NPN SILICON POWER DARLINGTONS
P R O D U C T I N F O R M A T I O N
TYPICAL CHARACTERISTICS
Figure 1.
Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
05
10
10
h
FE
- Typical DC Current Gain
50000
100
1000
10000
TCS130AD
T
C
= -40C
T
C
= 25C
T
C
= 100C
V
CE
= 3 V
t
p
= 300 s, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
05
10
10
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
05
10
15
20
TCS130AB
T
C
= -40C
T
C
= 25C
T
C
= 100C
t
p
= 300 s, duty cycle < 2%
I
B
= I
C
/ 100
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
05
10
10
V
BE(sat)
- Base-Emitter Saturation Voltage - V
05
10
15
20
25
30
TCS130AC
T
C
= -40C
T
C
= 25C
T
C
= 100C
I
B
= I
C
/ 100
t
p
= 300 s, duty cycle < 2%
BD645, BD647, BD649, BD651
NPN SILICON POWER DARLINGTONS
4
MAY 1993 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
MAXIMUM SAFE OPERATING REGIONS
Figure 4.
THERMAL INFORMATION
Figure 5.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
V
CE
- Collector-Emitter Voltage - V
10
10
100
1000
I
C
- Collector Current - A
0.01
01
10
10
SAS130AC
BD645
BD647
BD649
BD651
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
T
C
- Case Temperature - C
0
25
50
75
100
125
150
P
tot
- Maximum Power Dissipation - W
0
10
20
30
40
50
60
70
80
TIS130AC
5
MAY 1993 - REVISED MARCH 1997
BD645, BD647, BD649, BD651
NPN SILICON POWER DARLINGTONS
P R O D U C T I N F O R M A T I O N
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
TO220
ALL LINEAR DIMENSIONS IN MILLIMETERS
1,23
1,32
4,20
4,70
1
2
3
0,97
0,61
see Note C
see Note B
10,0
10,4
2,54
2,95
6,0
6,6
14,55
15,90
12,7
14,1
3,5
6,1
1,07
1,70
2,34
2,74
4,88
5,28
3,71
3,96
0,41
0,64
2,40
2,90
VERSION 2
VERSION 1
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MDXXBE
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