BDV64, BDV64A, BDV64B, BDV64C
PNP SILICON POWER DARLINGTONS
P R O D U C T I N F O R M A T I O N
1
JUNE 1993 - REVISED MARCH 1997
Copyright 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
q
Designed for Complementary Use with
BDV65, BDV65A, BDV65B and BDV65C
q
125 W at 25C Case Temperature
q
12 A Continuous Collector Current
q
Minimum h
FE
of 1000 at 4 V, 5 A
SOT-93 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRAA
B
C
E
1
2
3
absolute maximum ratings
at 25C case temperature (unless otherwise noted)
NOTES: 1. This value applies for t
p
0.1 ms, duty cycle
10%
2. Derate linearly to 150C case temperature at the rate of 0.56 W/C.
3. Derate linearly to 150C free air temperature at the rate of 28 mW/C.
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (I
E
= 0)
BDV64
BDV64A
BDV64B
BDV64C
V
CBO
-60
-80
-100
-120
V
Collector-emitter voltage (I
B
= 0)
BDV64
BDV64A
BDV64B
BDV64C
V
CEO
-60
-80
-100
-120
V
Emitter-base voltage
V
EBO
-5
V
Continuous collector current
I
C
-12
A
Peak collector current (see Note 1)
I
CM
-15
A
Continuous base current
I
B
-0.5
A
Continuous device dissipation at (or below) 25C case temperature (see Note 2)
P
tot
125
W
Continuous device dissipation at (or below) 25C free air temperature (see Note 3)
P
tot
3.5
W
Operating junction temperature range
T
j
-65 to +150
C
Storage temperature range
T
stg
-65 to +150
C
Lead temperature 3.2 mm from case for 10 seconds
T
L
260
C
BDV64, BDV64A, BDV64B, BDV64C
PNP SILICON POWER DARLINGTONS
2
JUNE 1993 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
NOTES: 4. These parameters must be measured using pulse techniques, t
p
= 300 s, duty cycle
2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
electrical characteristics at 25C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
= -30 mA
I
B
= 0
(see Note 4)
BDV64
BDV64A
BDV64B
BDV64C
-60
-80
-100
-120
V
I
CEO
Collector-emitter
cut-off current
V
CB
= -30 V
V
CB
= -40 V
V
CB
= -50 V
V
CB
= -60 V
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
BDV64
BDV64A
BDV64B
BDV64C
-2
-2
-2
-2
mA
I
CBO
Collector cut-off
current
V
CB
= -60 V
V
CB
= -80 V
V
CB
= -100 V
V
CB
= -120 V
V
CB
= -30 V
V
CB
= -40 V
V
CB
= -50 V
V
CB
= -60 V
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
T
C
= 150C
T
C
= 150C
T
C
= 150C
T
C
= 150C
BDV64
BDV64A
BDV64B
BDV64C
BDV64
BDV64A
BDV64B
BDV64C
-0.4
-0.4
-0.4
-0.4
-2
-2
-2
-2
mA
I
EBO
Emitter cut-off
current
V
EB
= -5 V
I
C
= 0
-5
mA
h
FE
Forward current
transfer ratio
V
CE
= -4 V
I
C
= -5 A
(see Notes 4 and 5)
1000
V
CE(sat)
Collector-emitter
saturation voltage
I
B
= -20 mA
I
C
= -5 A
(see Notes 4 and 5)
-2
V
V
BE
Base-emitter
voltage
V
CE
= -4 V
I
C
= -5 A
(see Notes 4 and 5)
-2.5
V
V
EC
Parallel diode
forward voltage
I
E
= -10 A
I
B
= 0
(see Notes 4 and 5)
-3.5
V
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
JC
Junction to case thermal resistance
1
C/W
R
JA
Junction to free air thermal resistance
35.7
C/W
3
JUNE 1993 - REVISED MARCH 1997
BDV64, BDV64A, BDV64B, BDV64C
PNP SILICON POWER DARLINGTONS
P R O D U C T I N F O R M A T I O N
TYPICAL CHARACTERISTICS
Figure 1.
Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
-05
-20
-10
-10
h
FE
- Typical DC Current Gain
100
1000
10000
TCS145AD
T
C
= -40C
T
C
= 25C
T
C
= 100C
V
CE
= -4 V
t
p
= 300 s, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
-05
-20
-10
-10
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
-20
-15
-10
-05
0
TCS145AE
T
C
= -40C
T
C
= 25C
T
C
= 100C
t
p
= 300 s, duty cycle < 2%
I
B
= I
C
/ 100
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
-05
-20
-10
-10
V
BE(sat)
- Base-Emitter Saturation Voltage - V
-30
-25
-20
-10
-15
-05
0
TCS145AF
T
C
= -40C
T
C
= 25C
T
C
= 100C
I
B
= I
C
/ 100
t
p
= 300 s, duty cycle < 2%
BDV64, BDV64A, BDV64B, BDV64C
PNP SILICON POWER DARLINGTONS
4
JUNE 1993 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
THERMAL INFORMATION
Figure 4.
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
T
C
- Case Temperature - C
0
25
50
75
100
125
150
P
tot
- Maximum Power Dissipation - W
0
20
40
60
80
100
120
140
TIS140AA
5
JUNE 1993 - REVISED MARCH 1997
BDV64, BDV64A, BDV64B, BDV64C
PNP SILICON POWER DARLINGTONS
P R O D U C T I N F O R M A T I O N
SOT-93
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
SOT-93
ALL LINEAR DIMENSIONS IN MILLIMETERS
4,90
4,70
1,37
1,17
0,78
0,50
2,50 TYP.
15,2
14,7
12,2 MAX.
16,2 MAX.
18,0 TYP.
31,0 TYP.
1,30
1,10
11,1
10,8
4,1
4,0
3,95
4,15
1
2
3
NOTE A: The centre pin is in electrical contact with the mounting tab.
MDXXAW
BDV64, BDV64A, BDV64B, BDV64C
PNP SILICON POWER DARLINGTONS
6
JUNE 1993 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright 1997, Power Innovations Limited
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