BDX34, BDX34A, BDX34B, BDX34C, BDX34D
Transistor de puissance PNP darlington
P R O D U C T I N F O R M A T I O N
1
AUGUST 1993 - REVISED MARCH 1997
Copyright 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
q
Transistor complmentaire conut pour tre utilis avec
BDX33, BDX33A, BDX33B, BDX33C and
BDX33D
q
70 W 25C Temprature du botier
q
10 A Courant continu de collecteur
q
Minimum h
FE
of 750 at 3 V, 3 A
B
C
E
Botier TO-220
Vue de dessus
La broche 2 est en contact avec le botier
MDTRACA
1
2
3
Valeurs limites absolues
une temprateur botier de 25C
NOTES: 1. Derate linearly to 150C case temperature at the rate of 0.56 W/C.
2. Derate linearly to 150C free air temperature at the rate of 16 mW/C.
Paramtres Symbole Valeur Unit
Tension Collector-base (I
E
= 0)
BDX34
BDX34A
BDX34B
BDX34C
BDX34D
V
CBO
-45
-60
-80
-100
-120
V
Tension Collector-emetteur (I
B
= 0)
BDX34
BDX34A
BDX34B
BDX34C
BDX34D
V
CEO
-45
-60
-80
-100
-120
V
Tension Emetteur-base V
EBO
-5
V
Courant de collecteur en continu I
C
-10
A
Courant de base en continu I
B
-0.3
A
Continuous device dissipation at (or below) 25C case temperature (see Note 1)
P
tot
70
W
Continuous device dissipation at (or below) 25C free air temperature (see Note 2)
P
tot
2
W
Temprature de fonctionnement l'air libre T
J
-65 to +150
C
Temptature de stockage T
stg
-65 to +150
C
Temprature de fonctionnement l'air libre T
A
-65 to +150
C
BDX34, BDX34A, BDX34B, BDX34C, BDX34D
Transistor de puissance PNP darlington
2
AUGUST 1993 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
NOTES: 3. Ces paramtres sont obtenus en utilisant des impulsions, t
p
= 300 s, rapport cyclique
2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
Caractristiques lectriques avec le botier 25C (sauf indication)
Paramtres Conditions MIN TYP MAX UNITE
V
(BR)CEO
Tension de claquage
Collecteur-emetteur
I
C
= -100 mA I
B
= 0 (Voir Note 3)
BDX34
BDX34A
BDX34B
BDX34C
BDX34D
-45
-60
-80
-100
-120
V
I
CEO
Courant de bloquage
Collecteur-emetteur
V
CE
= -30 V
V
CE
= -30 V
V
CE
= -40 V
V
CE
= -50 V
V
CE
= -60 V
V
CE
= -30 V
V
CE
= -30 V
V
CE
= -40 V
V
CE
= -50 V
V
CE
= -60 V
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
T
C
= 100C
T
C
= 100C
T
C
= 100C
T
C
= 100C
T
C
= 100C
BDX34
BDX34A
BDX34B
BDX34C
BDX34D
BDX34
BDX34A
BDX34B
BDX34C
BDX34D
-0.5
-0.5
-0.5
-0.5
-0.5
-10
-10
-10
-10
-10
mA
I
CBO
Courant de bloquage
au collecteur
V
CB
= -45 V
V
CB
= -60 V
V
CB
= -80 V
V
CB
= -100 V
V
CB
= -120 V
V
CB
= -45 V
V
CB
= -60 V
V
CB
= -80 V
V
CB
= -100 V
V
CB
= -120 V
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
T
C
= 100C
T
C
= 100C
T
C
= 100C
T
C
= 100C
T
C
= 100C
BDX34
BDX34A
BDX34B
BDX34C
BDX34D
BDX34
BDX34A
BDX34B
BDX34C
BDX34D
-1
-1
-1
-1
-1
-5
-5
-5
-5
-5
mA
I
EBO
Courant de bloquage
l'metteur
V
EB
= -5 V I
C
= 0 -10 mA
h
FE
Gain
en courant
V
CE
= -3 V
V
CE
= -3 V
V
CE
= -3 V
V
CE
= -3 V
V
CE
= -3 V
I
C
= -4 A
I
C
= -4 A
I
C
= -3 A
I
C
= -3 A
I
C
= -3 A
(Voir Notes 3 et 4)
BDX34
BDX34A
BDX34B
BDX34C
BDX34D
750
750
750
750
750
V
BE(on)
Tension
Base-emitter
V
CE
= -3 V
V
CE
= -3 V
V
CE
= -3 V
V
CE
= -3 V
V
CE
= -3 V
I
C
= -4 A
I
C
= -4 A
I
C
= -3 A
I
C
= -3 A
I
C
= -3 A
(Voir Notes 3 et 4)
BDX34
BDX34A
BDX34B
BDX34C
BDX34D
-2.5
-2.5
-2.5
-2.5
-2.5
V
V
CE(sat)
Tension de saturation
Collecteur-emetteur
I
B
= -8 mA
I
B
= -8 mA
I
B
= -6 mA
I
B
= -6 mA
I
B
= -6 mA
I
C
= -4 A
I
C
= -4 A
I
C
= -3 A
I
C
= -3 A
I
C
= -3 A
(Voir Notes 3 et 4)
BDX34
BDX34A
BDX34B
BDX34C
BDX34D
-2.5
-2.5
-2.5
-2.5
-2.5
V
V
EC
Courant direct dans
la diode parallle
I
E
= -8 A
I
B
= 0
-4
V
3
AUGUST 1993 - REVISED MARCH 1997
BDX34, BDX34A, BDX34B, BDX34C, BDX34D
PNP SILICON POWER DARLINGTONS
P R O D U C T I N F O R M A T I O N
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
JC
Junction to case thermal resistance
1.78
C/W
R
JA
Junction to free air thermal resistance
62.5
C/W
resistive-load-switching characteristics at 25C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
t
on
Turn-on time
I
C
= -3 A
V
BE(off)
= 3.5 V
I
B(on)
= -12 mA
R
L
= 10
I
B(off)
= 12 mA
t
p
= 20
s, dc
2%
1
s
t
off
Turn-off time
5
s
BDX34, BDX34A, BDX34B, BDX34C, BDX34D
PNP SILICON POWER DARLINGTONS
4
AUGUST 1993 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
TYPICAL CHARACTERISTICS
Figure 1.
Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
-05
-10
-10
h
FE
- Typical DC Current Gain
50000
100
1000
10000
TCS135AF
T
C
= -40C
T
C
= 25C
T
C
= 100C
V
CE
= -3 V
t
p
= 300 s, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
-05
-10
-10
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
-20
-15
-10
-05
TCS135AH
T
C
= -40C
T
C
= 25C
T
C
= 100C
t
p
= 300 s, duty cycle < 2%
I
B
= I
C
/ 100
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
-05
-10
-10
V
BE(sat)
- Base-Emitter Saturation Voltage - V
-30
-25
-20
-15
-10
-05
TCS135AJ
T
C
= -40C
T
C
= 25C
T
C
= 100C
I
B
= I
C
/ 100
t
p
= 300 s, duty cycle < 2%
5
AUGUST 1993 - REVISED MARCH 1997
BDX34, BDX34A, BDX34B, BDX34C, BDX34D
PNP SILICON POWER DARLINGTONS
P R O D U C T I N F O R M A T I O N
THERMAL INFORMATION
Figure 4.
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
T
C
- Case Temperature - C
0
25
50
75
100
125
150
P
tot
- Maximum Power Dissipation - W
0
10
20
30
40
50
60
70
80
TIS130AB
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