BU406, BU407
NPN SILICON POWER TRANSISTORS
P R O D U C T I N F O R M A T I O N
1
AUGUST 1978 - REVISED MARCH 1997
Copyright 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
q
7 A Continuous Collector Current
q
15 A Peak Collector Current
q
60 W at 25C Case Temperature
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
absolute maximum ratings
at 25C case temperature (unless otherwise noted)
NOTE
1: This value applies for t
p
10 ms, duty cycle
2%.
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (I
E
= 0)
BU406
BU407
V
CBO
400
330
V
Collector-emitter voltage (V
BE
= -2 V)
BU406
BU407
V
CEX
400
330
V
Collector-emitter voltage (I
B
= 0)
BU406
BU407
V
CEO
200
150
V
Emitter-base voltage
V
EB
6
V
Continuous collector current
I
C
7
A
Peak collector current (see Note 1)
I
CM
15
A
Continuous base current
I
B
4
A
Continuous device dissipation at (or below) 25C case temperature
P
tot
60
W
Operating junction temperature range
T
j
-55 to +150
C
Storage temperature range
T
stg
-55 to +150
C
BU406, BU407
NPN SILICON POWER TRANSISTORS
2
AUGUST 1978 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
NOTES: 2. These parameters must be measured using pulse techniques, t
p
= 300 s, duty cycle
2%.
3. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
4. To obtain f
t
the [h
FE
] response is extrapolated at the rate of -6 dB per octave from f = 1 MHz to the frequency at which [h
FE
] = 1.
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
= 30 mA
I
B
= 0
140
V
I
CES
Collector-emitter
cut-off current
V
CE
= 400 V
V
CE
= 330 V
V
CE
= 250 V
V
CE
= 200 V
V
CE
= 250 V
V
CE
= 200 V
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
T
C
= 150C
T
C
= 150C
BU406
BU407
BU406
BU407
BU406
BU407
5
5
0.1
0.1
1
1
mA
I
EBO
Emitter cut-off
current
V
EB
= 6 V
I
C
= 0
1
mA
h
FE
Forward current
transfer ratio
V
CE
= 10 V
V
CE
= 10 V
I
C
= 4 A
I
C
= 0.5 A
(see Notes 2 and 3)
12
20
V
CE(sat)
Collector-emitter
saturation voltage
I
B
= 0.5 A
I
C
= 5 A
(see Notes 2 and 3)
1
V
V
BE(sat)
Base-emitter
saturation voltage
I
B
= 0.5 A
I
C
= 5 A
(see Notes 2 and 3)
1.2
V
f
t
Current gain
bandwidth product
V
CE
= 5 V
I
C
= 0.5 A
f = 1 MHz
(see Note 4)
6
MHz
C
ob
Output capacitance
V
CB
= 20 V
I
E
= 0
f = 1 MHz
60
pF
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
JC
Junction to case thermal resistance
2.08
C/W
R
JA
Junction to free air thermal resistance
70
C/W
inductive-load-switching characteristics at 25C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
t
s
Storage time
I
C
= 5 A
I
B(end)
= 0.5A
(see Figures 1 and 2)
2.7
s
t
(off)
Turn off time
750
ns
3
AUGUST 1978 - REVISED MARCH 1997
BU406, BU407
NPN SILICON POWER TRANSISTORS
P R O D U C T I N F O R M A T I O N
PARAMETER MEASUREMENT INFORMATION
Figure 1. Inductive-Load Switching Test Circuit
Figure 2. Inductive-Load Switching Waveforms
Current
Probes
0
+4V
V cc = 24V
47
100
100
50
22
22
1 k
22
5.6
7.5
H
14.8
H
240
5 pF
2N5337
2N6191
TIP31
TIP31
TIP31
TIP32
TIP32
TUT
BY205
BY205
OUTPUT
V BB+
V BB-
SET
I B
INPUT
t
s
I
B(end)
s
64
42
s
50%
I
B
I C
V
CE
0
0
0
3 V
V
fly
t off
0.1 A
t
off
is the time for the collector
current I
C
to decrease to 0.1 A
after the collector to emitter
voltage V
CE
has risen 3 V into
its flyback excursion.
BU406, BU407
NPN SILICON POWER TRANSISTORS
4
AUGUST 1978 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
TYPICAL CHARACTERISTICS
Figure 3.
Figure 4.
Figure 5.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
01
10
10
h
FE
- Typical DC Current Gain
0
10
20
30
40
50
60
70
TCD124AA
T
C
= 100C
T
C
= 25C
T
C
= -55C
t
p
< 300 s
d < 2%
V
CE
= 5 V
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
01
10
10
h
FE
- Typical DC Current Gain
0
10
20
30
40
50
TCD124AB
V
CE
= 1 V
V
CE
= 5 V
V
CE
= 10 V
T
C
= 25C
t
p
< 300 s
d < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
CASE TEMPERATURE
T
C
- Case Temperature - C
-60 -40 -20
0
20
40
60
80 100 120 140 160
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
0
01
02
03
04
05
06
07
08
TCD124AC
I
C
= 8 A
I
B
= 2 A
I
C
= 4 A
I
B
= 0.5 A
t
p
< 300 s
d < 2%
5
AUGUST 1978 - REVISED MARCH 1997
BU406, BU407
NPN SILICON POWER TRANSISTORS
P R O D U C T I N F O R M A T I O N
MAXIMUM SAFE OPERATING REGIONS
Figure 6.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
V
CE
- Collector-Emitter Voltage - V
10
10
100
1000
I
C
- Collector Current - A
0.01
01
10
10
SAD124AA
BU407
BU406
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