TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
P R O D U C T I N F O R M A T I O N
1
APRIL 1971 - REVISED MARCH 1997
Copyright 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
q
5 A Continuous On-State Current
q
30 A Surge-Current
q
Glass Passivated Wafer
q
400 V to 800 V Off-State Voltage
q
Max I
GT
of 200 A
K
A
G
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDC1ACA
1
2
3
absolute maximum ratings
over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply when the gate-cathode resistance R
GK
= 1 k
.
2. These values apply for continuous dc operation with resistive load. Above 80C derate linearly to zero at 110C.
3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80C derate
linearly to zero at 110C.
4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
5. This value applies for a maximum averaging time of 20 ms.
RATING
SYMBOL
VALUE
UNIT
Repetitive peak off-state voltage (see Note 1)
TIC106D
TIC106M
TIC106S
TIC106N
V
DRM
400
600
700
800
V
Repetitive peak reverse voltage
TIC106D
TIC106M
TIC106S
TIC106N
V
RRM
400
600
700
800
V
Continuous on-state current at (or below) 80C case temperature (see Note 2)
I
T(RMS)
5
A
Average on-state current (180 conduction angle) at (or below) 80C case temperature
(see Note 3)
I
T(AV)
3.2
A
Surge on-state current (see Note 4)
I
TM
30
A
Peak positive gate current (pulse width
300
s)
I
GM
0.2
A
Peak gate power dissipation (pulse width
300
s)
P
GM
1.3
W
Average gate power dissipation (see Note 5)
P
G(AV)
0.3
W
Operating case temperature range
T
C
-40 to +110
C
Storage temperature range
T
stg
-40 to +125
C
Lead temperature 1.6 mm from case for 10 seconds
T
L
230
C
TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
2
APRIL 1971 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
NOTE
6: This parameter must be measured using pulse techniques, t
p
= 300 s, duty cycle
2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.
electrical characteristics at 25C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
I
DRM
Repetitive peak
off-state current
V
D
= rated V
DRM
R
GK
= 1 k
T
C
= 110C
400
A
I
RRM
Repetitive peak
reverse current
V
R
= rated V
RRM
I
G
= 0
T
C
= 110C
1
mA
I
GT
Gate trigger current
V
AA
= 6 V
R
L
= 100
t
p(g)
20
s
60
200
A
V
GT
Gate trigger voltage
V
AA
= 6 V
t
p(g)
20 s
R
L
= 100
R
GK
= 1 k
T
C
= - 40C
1.2
V
V
AA
= 6 V
t
p(g)
20 s
R
L
= 100
R
GK
= 1 k
0.4
0.6
1
V
AA
= 6 V
t
p(g)
20 s
R
L
= 100
R
GK
= 1 k
T
C
= 110C
0.2
I
H
Holding current
V
AA
= 6 V
Initiating I
T
= 10 mA
R
GK
= 1 k
T
C
= - 40C
8
mA
V
AA
= 6 V
Initiating I
T
= 10 mA
R
GK
= 1 k
5
V
TM
Peak on-state
voltage
I
TM
= 5 A
(See Note 6)
1.7
V
dv/dt
Critical rate of rise of
off-state voltage
V
D
= rated V
D
R
GK
= 1 k
T
C
= 110C
10
V/s
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
JC
Junction to case thermal resistance
3.5
C/W
R
JA
Junction to free air thermal resistance
62.5
C/W
resistive-load-switching characteristics at 25C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
t
gt
Gate-controlled
turn-on time
I
T
= 5 A
I
G
= 10 mA
See Figure 1
1.75
s
t
q
Circuit-commutated
turn-off time
I
T
= 5 A
I
RM
= 8 A
I
G
= 10 mA
See Figure 2
7.7
s
3
APRIL 1971 - REVISED MARCH 1997
TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
P R O D U C T I N F O R M A T I O N
PARAMETER MEASUREMENT INFORMATION
Figure 1. Gate-controlled turn-on time
Figure 2. Circuit-commutated turn-off time
G
R
G
V
A
30 V
I
T
V
G
I
G
DUT
6
V
A
V
G
10%
90%
t
gt
PMC1AA
G1
R
G
V
A
30 V
I
A
6
V
G1
I
G
DUT
G2
R
G
V
G2
TH1
R2
R1
0.1
F
to 0.5
F
G2 t
P
Synchronisation
I
G
V
K
(I
RM
Monitor)
0.1
NOTES: A. Resistor R1 is adjusted for the specified value
of I
RM
.
B. Resistor R2 value is 30/I
H
, where I
H
is the
holding current value of thyristor TH1.
C. Thyristor TH1 is the same device type as the
DUT.
D. Pulse Generators, G1 and G2, are
synchronised to produce an on-state anode
current waveform with the following
characteristics:
t
P
= 50 s to 300 s
duty cycle = 1%
E. Pulse Generators, G1 and G2, have output
pulse amplitude, V
G
, of
20 V and duration of
10 s to 20 s.
V
G1
V
G2
I
A
V
A
I
T
I
RM
t
q
V
T
0
0
t
P
PMC1AB
TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
4
APRIL 1971 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
TYPICAL CHARACTERISTICS
Figure 3.
Figure 4.
Figure 5.
Figure 6.
AVERAGE ANODE ON-STATE CURRENT
T
C
- Case Temperature - C
30
40
50
60
70
80
90
100
110
I
T(AV)
- Maximum Average Anode Forward Current - A
0
1
2
3
4
5
6
TI20AA
DERATING CURVE
= 180
Continuous DC
Conduction
Angle
0
180
MAX CONTINUOUS ANODE POWER DISSIPATED
I
T
- Continuous On-State Current - A
1
10
100
P
A
-
M
a
x
C
o
n
t
i
n
u
o
u
s
A
n
o
d
e
P
o
w
e
r
D
i
s
s
i
p
a
t
e
d
-
W
1
10
100
TI20AB
CONTINUOUS ON-STATE CURRENT
vs
T
J
= 110C
SURGE ON-STATE CURRENT
Consecutive 50 Hz Half-Sine-Wave Cycles
1
10
100
I
T
M
-
P
e
a
k
H
a
l
f
-
S
i
n
e
-
W
a
v
e
C
u
r
r
e
n
t
-
A
1
10
100
TI20AC
CYCLES OF CURRENT DURATION
vs
T
C
80 C
No Prior Device Conduction
Gate Control Guaranteed
TRANSIENT THERMAL RESISTANCE
Consecutive 50 Hz Half-Sine-Wave Cycles
1
10
100
R
J
C
(
t
)
-
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l
R
e
s
i
s
t
a
n
c
e
-
C
/
W
01
1
10
TI20AD
CYCLES OF CURRENT DURATION
vs
5
APRIL 1971 - REVISED MARCH 1997
TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
P R O D U C T I N F O R M A T I O N
TYPICAL CHARACTERISTICS
Figure 7.
Figure 8.
Figure 9.
Figure 10.
GATE TRIGGER CURRENT
T
C
- Case Temperature - C
-50
-25
0
25
50
75
100
125
I
G
T
-
G
a
t
e
T
r
i
g
g
e
r
C
u
r
r
e
n
t
-
A
10
100
TC20AA
CASE TEMPERATURE
vs
V
AA
= 6 V
R
L
= 100
t
p(g)
20 s
GATE TRIGGER VOLTAGE
T
C
- Case Temperature - C
-50
-25
0
25
50
75
100
125
V
G
T
-
G
a
t
e
T
r
i
g
g
e
r
V
o
l
t
a
g
e
-
V
02
04
06
08
0
1
TC20AB
CASE TEMPERATURE
vs
V
AA
= 6 V
R
L
= 100
R
GK
= 1 k
t
p(g)
20 s
GATE FORWARD VOLTAGE
I
GF
- Gate Forward Current - mA
01
1
10
100
1000
V
G
F
-
G
a
t
e
F
o
r
w
a
r
d
V
o
l
t
a
g
e
-
V
01
1
10
TC20AC
GATE FORWARD CURRENT
vs
I
A
= 0
T
C
= 25 C
t
p
= 300 s
Duty Cycle
2 %
HOLDING CURRENT
T
C
- Case Temperature - C
-50
-25
0
25
50
75
100
125
I
H
-
H
o
l
d
i
n
g
C
u
r
r
e
n
t
-
m
A
1
10
TC20AD
CASE TEMPERATURE
vs
V
AA
= 6 V
R
GK
= 1 k
Initiating I
T
= 10 mA
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