TIC116 SERIES
SILICON CONTROLLED RECTIFIERS
P R O D U C T I N F O R M A T I O N
1
APRIL 1971 - REVISED JUNE 2000
Copyright 2000, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
G
8 A Continuous On-State Current
G
80 A Surge-Current
G
Glass Passivated Wafer
G
400 V to 800 V Off-State Voltage
G
Max I
GT
of 20 mA
K
A
G
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDC1ACA
1
2
3
absolute maximum ratings over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply for continuous dc operation with resistive load. Above 70C derate linearly to zero at 110C.
2. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 70C derate
linearly to zero at 110C.
3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
4. This value applies for a maximum averaging time of 20 ms.
RATING
SYMBOL
VALUE
UNIT
Repetitive peak off-state voltage
TIC116D
TIC116M
TIC116S
TIC116N
V
DRM
400
600
700
800
V
Repetitive peak reverse voltage
TIC116D
TIC116M
TIC116S
TIC116N
V
RRM
400
600
700
800
V
Continuous on-state current at (or below) 70C case temperature (see Note 1)
I
T(RMS)
8
A
Average on-state current (180 conduction angle) at (or below) 70C case temperature
(see Note 2)
I
T(AV)
5
A
Surge on-state current at (or below) 25C case temperature (see Note 3)
I
TM
80
A
Peak positive gate current (pulse width
300
s)
I
GM
3
A
Peak gate power dissipation (pulse width
300
s)
P
GM
5
W
Average gate power dissipation (see Note 4)
P
G(AV)
1
W
Operating case temperature range
T
C
-40 to +110
C
Storage temperature range
T
stg
-40 to +125
C
Lead temperature 1.6 mm from case for 10 seconds
T
L
230
C
TIC116 SERIES
SILICON CONTROLLED RECTIFIERS
2
APRIL 1971 - REVISED JUNE 2000
P R O D U C T I N F O R M A T I O N
NOTE
5: This parameter must be measured using pulse techniques, t
p
= 300 s, duty cycle
2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.
electrical characteristics at 25C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
I
DRM
Repetitive peak
off-state current
V
D
= rated V
DRM
T
C
= 110C
2
mA
I
RRM
Repetitive peak
reverse current
V
R
= rated V
RRM
I
G
= 0
T
C
= 110C
2
mA
I
GT
Gate trigger current
V
AA
= 12 V
R
L
= 100
t
p(g)
20
s
8
20
mA
V
GT
Gate trigger voltage
V
AA
= 12 V
t
p(g)
20 s
R
L
= 100
T
C
= - 40C
2.5
V
V
AA
= 12 V
t
p(g)
20 s
R
L
= 100
0.8
1.5
V
AA
= 12 V
t
p(g)
20 s
R
L
= 100
T
C
= 110C
0.2
I
H
Holding current
V
AA
= 12 V
Initiating I
T
= 100 mA
T
C
= - 40C
100
mA
V
AA
= 12 V
Initiating I
T
= 100 mA
40
V
T
On-state
voltage
I
T
= 8 A
(see Note 5)
1.7
V
dv/dt
Critical rate of rise of
off-state voltage
V
D
= rated V
D
I
G
= 0
T
C
= 110C
400
V/s
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
JC
Junction to case thermal resistance
3
C/W
R
JA
Junction to free air thermal resistance
62.5
C/W
3
APRIL 1971 - REVISED JUNE 2000
TIC116 SERIES
SILICON CONTROLLED RECTIFIERS
P R O D U C T I N F O R M A T I O N
THERMAL INFORMATION
Figure 1.
Figure 2.
Figure 3.
Figure 4.
AVERAGE ON-STATE CURRENT
T
C
- Case Temperature - C
30
40
50
60
70
80
90
100
110
I
T
(
A
V
)
-
M
a
x
i
m
u
m
A
v
e
r
a
g
e
O
n
-
S
t
a
t
e
C
u
r
r
e
n
t
-
A
0
2
4
6
8
10
12
14
16
TI03AA
DERATING CURVE
Continuous DC
Conduction
Angle
0
180
= 180
MAX ANODE POWER LOSS
I
T
- Continuous On-State Current - A
01
1
10
100
P
A
- Max Continuous Anode Power Dissipated- W
01
1
10
100
TI03AB
ON-STATE CURRENT
vs
T
J
= 110C
SURGE ON-STATE CURRENT
Consecutive 50 Hz Half-Sine-Wave Cycles
1
10
100
I
TM
- Peak Half-Sine-Wave Current - A
1
10
100
TI03AC
CYCLES OF CURRENT DURATION
vs
T
C
70C
No Prior Device Conduction
Gate Control Guaranteed
TRANSIENT THERMAL RESISTANCE
Consecutive 50 Hz Half-Sine-Wave Cycles
1
10
100
R
J
C
(
t
)
-
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l
R
e
s
i
s
t
a
n
c
e
-
C
/
W
01
1
10
TI03AD
CYCLES OF CURRENT DURATION
vs
TIC116 SERIES
SILICON CONTROLLED RECTIFIERS
4
APRIL 1971 - REVISED JUNE 2000
P R O D U C T I N F O R M A T I O N
TYPICAL CHARACTERISTICS
Figure 5.
Figure 6.
Figure 7.
Figure 8.
GATE TRIGGER CURRENT
T
C
- Case Temperature - C
-50
-25
0
25
50
75
100
125
I
GT
- Gate Trigger Current - mA
1
10
TC03AA
CASE TEMPERATURE
vs
V
AA
=12 V
R
L
= 100
t
p(g)
20 s
GATE TRIGGER VOLTAGE
T
C
- Case Temperature - C
-50
-25
0
25
50
75
100
125
V
GT
- Gate Trigger Voltage - V
0
02
04
06
08
1
TC03AB
CASE TEMPERATURE
vs
V
AA
=12 V
R
L
= 100
t
p(g)
20 s
HOLDING CURRENT
T
C
- Case Temperature - C
-50
-25
0
25
50
75
100
125
I
H
- Holding Current - mA
1
10
100
TC03AD
CASE TEMPERATURE
vs
V
AA
= 12 V
Initiating I
T
= 100 mA
PEAK ON-STATE VOLTAGE
I
TM
- Peak On-State Current - A
01
1
10
100
V
T
M
-
P
e
a
k
O
n
-
S
t
a
t
e
V
o
l
t
a
g
e
-
V
0
05
1
15
2
25
TC03AE
vs
PEAK ON-STATE CURRENT
T
C
= 25 C
t
P
= 300 s
Duty Cycle
2 %
5
APRIL 1971 - REVISED JUNE 2000
TIC116 SERIES
SILICON CONTROLLED RECTIFIERS
P R O D U C T I N F O R M A T I O N
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
TO-220
ALL LINEAR DIMENSIONS IN MILLIMETERS
1,23
1,32
4,20
4,70
1
2
3
0,97
0,66
10,0
10,4
2,54
2,95
6,0
6,6
14,55
15,32
12,7
14,1
5,6
6,1
1,07
1,47
2,34
2,74
4,68
5,28
3,71
3,96
0,41
0,64
2,40
2,90
NOTE A: The centre pin is in electrical contact with the mounting tab.
18,0 TYP.
PDF 
ZIP