TIC206 SERIES
SILICON TRIACS
P R O D U C T I N F O R M A T I O N
1
DECEMBER 1971 - REVISED MARCH 1997
Copyright 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
q
Sensitive Gate Triacs
q
4 A RMS
q
Glass Passivated Wafer
q
400 V to 800 V Off-State Voltage
q
Max I
GT
of 5 mA (Quadrants 1 - 3)
MT1
MT2
G
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDC2ACA
1
2
3
absolute maximum ratings
over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85C derate linearly to 110C case temperature at
the rate of 160 mA/C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
5. This value applies for a maximum averaging time of 20 ms.
RATING
SYMBOL
VALUE
UNIT
Repetitive peak off-state voltage (see Note 1)
TIC206D
TIC206M
TIC206S
TIC206N
V
DRM
400
600
700
800
V
Full-cycle RMS on-state current at (or below) 85C case temperature (see Note 2)
I
T(RMS)
4
A
Peak on-state surge current full-sine-wave (see Note 3)
I
TSM
25
A
Peak on-state surge current half-sine-wave (see Note 4)
I
TSM
30
A
Peak gate current
I
GM
0.2
A
Peak gate power dissipation at (or below) 85C case temperature (pulse width
200
s)
P
GM
1.3
W
Average gate power dissipation at (or below) 85C case temperature (see Note 5)
P
G(AV)
0.3
W
Operating case temperature range
T
C
-40 to +110
C
Storage temperature range
T
stg
-40 to +125
C
Lead temperature 1.6 mm from case for 10 seconds
T
L
230
C
electrical characteristics at 25C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
I
DRM
Repetitive peak
off-state current
V
D
= rated V
DRM
I
G
= 0
T
C
= 110C
1
mA
I
GTM
Peak gate trigger
current
V
supply
= +12 V
V
supply
= +12 V
V
supply
= -12 V
V
supply
= -12 V
R
L
= 10
R
L
= 10
R
L
= 10
R
L
= 10
t
p(g)
> 20
s
t
p(g)
> 20
s
t
p(g)
> 20
s
t
p(g)
> 20
s
0.5
-1.5
-2
3.6
5
-5
-5
10
mA
V
GTM
Peak gate trigger
voltage
V
supply
= +12 V
V
supply
= +12 V
V
supply
= -12 V
V
supply
= -12 V
R
L
= 10
R
L
= 10
R
L
= 10
R
L
= 10
t
p(g)
> 20
s
t
p(g)
> 20
s
t
p(g)
> 20
s
t
p(g)
> 20
s
0.7
-0.7
-0.8
0.8
2
-2
-2
2
V
All voltages are with respect to Main Terminal 1.
TIC206 SERIES
SILICON TRIACS
2
DECEMBER 1971 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
All voltages are with respect to Main Terminal 1.
NOTES: 6. This parameter must be measured using pulse techniques, t
p
=
1 ms, duty cycle
2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
7. The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator with the following characteristics:
R
G
= 100
, t
p(g)
= 20
s, t
r
=
15 ns, f = 1 kHz.
V
TM
Peak on-state voltage
I
TM
= 4.2 A
I
G
= 50 mA
(see Note 6)
1.3
2.2
V
I
H
Holding current
V
supply
= +12 V
V
supply
= -12 V
I
G
= 0
I
G
= 0
Init' I
TM
= 100 mA
Init' I
TM
= -100 mA
2
-4
15
-15
mA
I
L
Latching current
V
supply
= +12 V
V
supply
= -12 V
(see Note 7)
30
-30
mA
dv/dt
Critical rate of rise of
off-state voltage
V
DRM
= Rated V
DRM
I
G
= 0
T
C
= 110C
50
V/s
dv/dt
(c)
Critical rise of
commutation voltage
V
DRM
= Rated V
DRM
I
TRM
= 4.2 A
T
C
= 85C
1
1.3
2.5
V/s
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
JC
Junction to case thermal resistance
7.8
C/W
R
JA
Junction to free air thermal resistance
62.5
C/W
electrical characteristics at 25C case temperature (unless otherwise noted) (continued)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
TYPICAL CHARACTERISTICS
Figure 1.
Figure 2.
GATE TRIGGER CURRENT
T
C
- Case Temperature - C
-60
-40
-20
0
20
40
60
80
100
120
I
G
T
-
G
a
t
e
T
r
i
g
g
e
r
C
u
r
r
e
n
t
-
m
A
01
1
10
100
1000
TC05AA
TEMPERATURE
vs
V
supply
I
GTM
+ +
+ -
- -
- +
V
AA
= 12 V
R
L
= 10
t
w(g)
= 20 s
GATE TRIGGER VOLTAGE
T
C
- Case Temperature - C
-60
-40
-20
0
20
40
60
80
100
120
V
G
T
-
G
a
t
e
T
r
i
g
g
e
r
V
o
l
t
a
g
e
-
V
01
1
10
TC05AB
TEMPERATURE
vs
V
supply
I
GTM
+ +
+ -
- -
- +
}
}
V
AA
= 12 V
R
L
= 10
t
w(g)
= 20 s
3
DECEMBER 1971 - REVISED MARCH 1997
TIC206 SERIES
SILICON TRIACS
P R O D U C T I N F O R M A T I O N
TYPICAL CHARACTERISTICS
Figure 3.
Figure 4.
Figure 5.
HOLDING CURRENT
T
C
- Case Temperature - C
-60
-40
-20
0
20
40
60
80
100
120
I
H
-
H
o
l
d
i
n
g
C
u
r
r
e
n
t
-
m
A
01
1
10
100
TC05AD
CASE TEMPERATURE
vs
V
supply
+
-
V
AA
= 12 V
I
G
= 0
Initiating I
TM
= 100 mA
GATE FORWARD VOLTAGE
I
GF
- Gate Forward Current - A
00001
0001
001
01
1
V
G
F
-
G
a
t
e
F
o
r
w
a
r
d
V
o
l
t
a
g
e
-
V
001
01
1
10
TC05AC
GATE FORWARD CURRENT
vs
I
A
= 0
T
C
= 25 C
QUADRANT 1
LATCHING CURRENT
T
C
- Case Temperature - C
-60
-40
-20
0
20
40
60
80
100
120
I
L
-
L
a
t
c
h
i
n
g
C
u
r
r
e
n
t
-
m
A
1
10
100
TC05AE
CASE TEMPERATURE
vs
V
AA
= 12 V
V
supply
I
GTM
+ +
+ -
- -
- +
TIC206 SERIES
SILICON TRIACS
4
DECEMBER 1971 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
TO220
ALL LINEAR DIMENSIONS IN MILLIMETERS
1,23
1,32
4,20
4,70
1
2
3
0,97
0,61
see Note C
see Note B
10,0
10,4
2,54
2,95
6,0
6,6
14,55
15,90
12,7
14,1
3,5
6,1
1,07
1,70
2,34
2,74
4,88
5,28
3,71
3,96
0,41
0,64
2,40
2,90
VERSION 2
VERSION 1
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MDXXBE
5
DECEMBER 1971 - REVISED MARCH 1997
TIC206 SERIES
SILICON TRIACS
P R O D U C T I N F O R M A T I O N
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright 1997, Power Innovations Limited
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