TIC225 SERIES
SILICON TRIACS
P R O D U C T I N F O R M A T I O N
1
JULY 1975 - REVISED MARCH 1997
Copyright 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
q
Sensitive Gate Triacs
q
8 A RMS, 70 A Peak
q
Glass Passivated Wafer
q
400 V to 800 V Off-State Voltage
q
Max I
GT
of 5 mA (Quadrant 1)
MT1
MT2
G
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDC2ACA
1
2
3
absolute maximum ratings
over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70C derate linearly to 110C case temperature at
the rate of 200 mA/C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
5. This value applies for a maximum averaging time of 20 ms.
RATING
SYMBOL
VALUE
UNIT
Repetitive peak off-state voltage (see Note 1)
TIC225D
TIC225M
TIC225S
TIC225N
V
DRM
400
600
700
800
V
Full-cycle RMS on-state current at (or below) 70C case temperature (see Note 2)
I
T(RMS)
8
A
Peak on-state surge current full-sine-wave (see Note 3)
I
TSM
70
A
Peak on-state surge current half-sine-wave (see Note 4)
I
TSM
80
A
Peak gate current
I
GM
1
A
Peak gate power dissipation at (or below) 85C case temperature (pulse width
200
s)
P
GM
2.2
W
Average gate power dissipation at (or below) 85C case temperature (see Note 5)
P
G(AV)
0.9
W
Operating case temperature range
T
C
-40 to +110
C
Storage temperature range
T
stg
-40 to +125
C
Lead temperature 1.6 mm from case for 10 seconds
T
L
230
C
electrical characteristics at 25C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
I
DRM
Repetitive peak
off-state current
V
D
= rated V
DRM
I
G
= 0
T
C
= 110C
2
mA
I
GTM
Peak gate trigger
current
V
supply
= +12 V
V
supply
= +12 V
V
supply
= -12 V
V
supply
= -12 V
R
L
= 10
R
L
= 10
R
L
= 10
R
L
= 10
t
p(g)
> 20
s
t
p(g)
> 20
s
t
p(g)
> 20
s
t
p(g)
> 20
s
0.8
-4.5
-3.5
11.7
5
-20
-10
30
mA
V
GTM
Peak gate trigger
voltage
V
supply
= +12 V
V
supply
= +12 V
V
supply
= -12 V
V
supply
= -12 V
R
L
= 10
R
L
= 10
R
L
= 10
R
L
= 10
t
p(g)
> 20
s
t
p(g)
> 20
s
t
p(g)
> 20
s
t
p(g)
> 20
s
0.7
-0.7
-0.8
0.9
2
-2
-2
2
V
All voltages are with respect to Main Terminal 1.
TIC225 SERIES
SILICON TRIACS
2
JULY 1975 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
All voltages are with respect to Main Terminal 1.
NOTES: 6. This parameter must be measured using pulse techniques, t
p
=
1 ms, duty cycle
2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
7. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:
R
G
= 100
, t
p(g)
= 20
s, t
r
=
15 ns, f = 1 kHz
V
TM
Peak on-state voltage
I
TM
= 12 A
I
G
= 50 mA
(see Note 6)
1.6
2.1
V
I
H
Holding current
V
supply
= +12 V
V
supply
= -12 V
I
G
= 0
I
G
= 0
Init' I
TM
= 100 mA
Init' I
TM
= -100 mA
3
-4.7
20
-20
mA
I
L
Latching current
V
supply
= +12 V
V
supply
= -12 V
(see Note 7)
30
-30
mA
dv/dt
Critical rate of rise of
off-state voltage
V
DRM
= Rated V
DRM
I
G
= 0
T
C
= 110C
50
V/s
dv/dt
(c)
Critical rise of
commutation voltage
V
DRM
= Rated V
DRM
I
TRM
= 12 A
T
C
= 70C
1
1.5
4.5
V/s
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
JC
Junction to case thermal resistance
2.5
C/W
R
JA
Junction to free air thermal resistance
62.5
C/W
electrical characteristics at 25C case temperature (unless otherwise noted) (continued)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
TYPICAL CHARACTERISTICS
Figure 1.
Figure 2.
GATE TRIGGER CURRENT
T
C
- Case Temperature - C
-60
-40
-20
0
20
40
60
80
100
120
I
G
T
-
G
a
t
e
T
r
i
g
g
e
r
C
u
r
r
e
n
t
-
m
A
01
1
10
100
1000
TC07AA
CASE TEMPERATURE
vs
V
supply
I
GTM
+ +
+ -
- -
- +
V
AA
= 12 V
R
L
= 10
t
p(g)
= 20 s
GATE TRIGGER VOLTAGE
T
C
- Case Temperature - C
-60
-40
-20
0
20
40
60
80
100
120
V
GT
- Gate Trigger Voltage - V
01
1
10
TC07AB
CASE TEMPERATURE
vs
- -
+ +
- +
+ -
}
V
supply
I
GTM
V
AA
= 12 V
R
L
= 10
t
p(g)
= 20 s
3
JULY 1975 - REVISED MARCH 1997
TIC225 SERIES
SILICON TRIACS
P R O D U C T I N F O R M A T I O N
TYPICAL CHARACTERISTICS
Figure 3.
Figure 4.
Figure 5.
Figure 6.
HOLDING CURRENT
T
C
- Case Temperature - C
-60
-40
-20
0
20
40
60
80
100
120
I
H
-
H
o
l
d
i
n
g
C
u
r
r
e
n
t
-
m
A
01
1
10
100
TC07AD
CASE TEMPERATURE
vs
V
supply
+
-
V
AA
= 12 V
I
G
= 0
Initiating I
TM
= 100 mA
GATE FORWARD VOLTAGE
I
GF
- Gate Forward Current - A
00001
0001
001
01
1
V
G
F
-
G
a
t
e
F
o
r
w
a
r
d
V
o
l
t
a
g
e
-
V
001
01
1
10
TC07AC
GATE FORWARD CURRENT
vs
I
A
= 0
T
C
= 25 C
QUADRANT 1
LATCHING CURRENT
T
C
- Case Temperature - C
-60
-40
-20
0
20
40
60
80
100
120
I
L
- Latching Current - mA
1
10
100
TC07AE
CASE TEMPERATURE
vs
V
AA
= 12 V
+ +
+ -
- -
- +
V
supply
I
GTM
SURGE ON-STATE CURRENT
Consecutive 50-Hz Half-Sine-Wave Cycles
1
10
100
1k
I
T
S
M
-
P
e
a
k
F
u
l
l
-
S
i
n
e
-
W
a
v
e
C
u
r
r
e
n
t
-
A
1
10
100
TI07AA
CYCLES OF CURRENT DURATION
vs
No Prior Device Conduction
Gate Control Guaranteed
T
C
70C
TIC225 SERIES
SILICON TRIACS
4
JULY 1975 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
TYPICAL CHARACTERISTICS
Figure 7.
PARAMETER MEASUREMENT INFORMATION
MAXIMUM RMS ON-STATE CURRENT
T
C
- Case Temperature - C
0
25
50
75
100
125
150
I
T
(
R
m
s
)
-
M
a
x
i
m
u
m
O
n
-
S
t
a
t
e
C
u
r
r
e
n
t
-
A
0
1
2
3
4
5
6
7
8
9
10
TI07AB
CASE TEMPERATURE
vs
V
AC
V
MT2
I
MT2
DUT
See
Note A
R
G
C1
R1
I
G
V
AC
I
MT2
V
MT2
I
G
I
TRM
dv/dt
10%
63%
L1
V
DRM
50 Hz
PMC2AA
NOTE A: The gate-current pulse is furnished by a trigger circuit which presents essentially an open circuit between pulses. The pulse is timed
so that the off-state-voltage duration is approximately 800 s.
Figure 8.
5
JULY 1975 - REVISED MARCH 1997
TIC225 SERIES
SILICON TRIACS
P R O D U C T I N F O R M A T I O N
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
TO220
ALL LINEAR DIMENSIONS IN MILLIMETERS
1,23
1,32
4,20
4,70
1
2
3
0,97
0,61
see Note C
see Note B
10,0
10,4
2,54
2,95
6,0
6,6
14,55
15,90
12,7
14,1
3,5
6,1
1,07
1,70
2,34
2,74
4,88
5,28
3,71
3,96
0,41
0,64
2,40
2,90
VERSION 2
VERSION 1
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MDXXBE
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