TIC236 SERIES
SILICON TRIACS
P R O D U C T I N F O R M A T I O N
1
DECEMBER 1971 - REVISED JUNE 2000
Copyright 2000, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
G
High Current Triacs
G
12 A RMS
G
Glass Passivated Wafer
G
400 V to 800 V Off-State Voltage
G
Max I
GT
of 50 mA (Quadrants 1 - 3)
MT1
MT2
G
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDC2ACA
1
2
3
absolute maximum ratings over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70C derate linearly to 110C case temperature at
the rate of 300 mA/C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
RATING
SYMBOL
VALUE
UNIT
Repetitive peak off-state voltage (see Note 1)
TIC236D
TIC236M
TIC236S
TIC236N
V
DRM
400
600
700
800
V
Full-cycle RMS on-state current at (or below) 70C case temperature (see Note 2)
I
T(RMS)
12
A
Peak on-state surge current full-sine-wave at (or below) 25C case temperature (see Note 3)
I
TSM
100
A
Peak gate current
I
GM
1
A
Operating case temperature range
T
C
-40 to +110
C
Storage temperature range
T
stg
-40 to +125
C
Lead temperature 1.6 mm from case for 10 seconds
T
L
230
C
electrical characteristics at 25C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
I
DRM
Repetitive peak
off-state current
V
D
= Rated V
DRM
I
G
= 0
T
C
= 110C
2
mA
I
GT
Gate trigger
current
V
supply
= +12 V
V
supply
= +12 V
V
supply
= -12 V
V
supply
= -12 V
R
L
= 10
R
L
= 10
R
L
= 10
R
L
= 10
t
p(g)
> 20
s
t
p(g)
> 20
s
t
p(g)
> 20
s
t
p(g)
> 20
s
12
-19
-16
34
50
-50
-50
mA
V
GT
Gate trigger
voltage
V
supply
= +12 V
V
supply
= +12 V
V
supply
= -12 V
V
supply
= -12 V
R
L
= 10
R
L
= 10
R
L
= 10
R
L
= 10
t
p(g)
> 20
s
t
p(g)
> 20
s
t
p(g)
> 20
s
t
p(g)
> 20
s
0.8
-0.8
-0.8
0.9
2
-2
-2
2
V
V
T
On-state voltage
I
TM
= 17 A
I
G
= 50 mA
(see Note 4)
1.4
2.1
V
I
H
Holding current
V
supply
= +12 V
V
supply
= -12 V
I
G
= 0
I
G
= 0
Init' I
TM
= 100 mA
Init' I
TM
= -100 mA
22
-12
40
-40
mA
All voltages are with respect to Main Terminal 1.
NOTE
4: This parameter must be measured using pulse techniques, t
p
=
1 ms, duty cycle
2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
TIC236 SERIES
SILICON TRIACS
2
DECEMBER 1971 - REVISED JUNE 2000
P R O D U C T I N F O R M A T I O N
All voltages are with respect to Main Terminal 1.
NOTE
5: The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:
R
G
= 100
, t
p(g)
= 20
s, t
r
=
15 ns, f = 1 kHz.
I
L
Latching current
V
supply
= +12 V
V
supply
= -12 V
(see Note 5)
80
-80
mA
dv/dt
Critical rate of rise of
off-state voltage
V
D
= Rated V
D
I
G
= 0
T
C
= 110C
400
V/s
dv/dt
(c)
Critical rise of
commutation voltage
V
D
= Rated V
D
di/dt = 0.5 I
T(RMS)
/ms
T
C
= 80C
I
T
= 1.4 I
T(RMS)
1.2
9
V/s
di/dt
Critical rate of rise of
on -state current
V
D
= Rated V
D
di
G
/dt = 50 mA/
s
I
GT
= 50 mA
T
C
= 110C
100
A/s
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
JC
Junction to case thermal resistance
2
C/W
R
JA
Junction to free air thermal resistance
62.5
C/W
electrical characteristics at 25C case temperature (unless otherwise noted) (continued)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
TYPICAL CHARACTERISTICS
Figure 1.
Figure 2.
GATE TRIGGER CURRENT
T
C
- Case Temperature - C
-60
-40
-20
0
20
40
60
80
100 120
I
GT
- Gate Trigger Current - mA
01
1
10
100
1000
TC08AA
CASE TEMPERATURE
vs
V
supply
I
GTM
+ +
+ -
- -
- +
V
AA
= 12 V
R
L
= 10
t
p(g)
= 20 s
GATE TRIGGER VOLTAGE
T
C
- Case Temperature - C
-60
-40
-20
0
20
40
60
80
100 120
V
GT
- Gate Trigger Voltage - V
01
1
10
TC08AB
CASE TEMPERATURE
vs
V
AA
= 12 V
R
L
= 10
t
p(g)
= 20 s
V
supply
I
GTM
+ +
+ -
- -
- +
}
3
DECEMBER 1971 - REVISED JUNE 2000
TIC236 SERIES
SILICON TRIACS
P R O D U C T I N F O R M A T I O N
TYPICAL CHARACTERISTICS
Figure 3.
Figure 4.
HOLDING CURRENT
T
C
- Case Temperature - C
-60
-40
-20
0
20
40
60
80
100 120
I
H
- Holding Current - mA
0.1
1
10
100
TC08AD
CASE TEMPERATURE
vs
V
AA
= 12 V
I
G
= 0
Initiating I
TM
= 100 mA
V
supply
+
-
LATCHING CURRENT
T
C
- Case Temperature - C
-60
-40
-20
0
20
40
60
80
100 120
I
L
- Latching Current - mA
1
10
100
1000
TC08AE
CASE TEMPERATURE
vs
V
AA
= 12 V
V
supply
I
GTM
+ +
+ -
- -
- +
TIC236 SERIES
SILICON TRIACS
4
DECEMBER 1971 - REVISED JUNE 2000
P R O D U C T I N F O R M A T I O N
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
TO-220
ALL LINEAR DIMENSIONS IN MILLIMETERS
1,23
1,32
4,20
4,70
1
2
3
0,97
0,66
10,0
10,4
2,54
2,95
6,0
6,6
14,55
15,32
12,7
14,1
5,6
6,1
1,07
1,47
2,34
2,74
4,68
5,28
3,71
3,96
0,41
0,64
2,40
2,90
NOTE A: The centre pin is in electrical contact with the mounting tab.
18,0 TYP.
5
DECEMBER 1971 - REVISED JUNE 2000
TIC236 SERIES
SILICON TRIACS
P R O D U C T I N F O R M A T I O N
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright 2000, Power Innovations Limited
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