TICP107 SERIES
SILICON CONTROLLED RECTIFIERS
P R O D U C T I N F O R M A T I O N
1
JANUARY 1999 - REVISED JUNE 2000
Copyright 2000, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
G
1 A Continuous On-State Current
G
15 A Surge-Current
G
Glass Passivated Wafer
G
400 V to 600 V Off-State Voltage
G
I
GT
50 A min, 200 A max
G
di/dt 100A/s
G
Package Options
PACKAGE
PACKING
PART # SUFFIX
LP
Bulk
(None)
LP with fomed leads
Tape and Reel
R
LP PACKAGE
(TOP VIEW)
MDC1AA
G
A
K
1
2
3
LP PACKAGE
WITH FORMED LEADS
(TOP VIEW)
MDC1AB
G
A
K
1
2
3
absolute maximum ratings over operating junction temperature (unless otherwise noted)
NOTES: 1. These values apply when the gate-cathode resistance R
GK
= 1 k
.
2. These values apply for continuous dc operation with resistive load.
3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
4. Rate of rise of on-state current after triggering with I
G
= 10mA, di
G
/dt = 1A/s.
RATING
SYMBOL
VALUE
UNIT
Repetitive peak off-state voltage (see Note 1)
TICP107D
TICP107M
V
DRM
400
600
V
Repetitive peak reverse voltage
TICP107D
TICP107M
V
RRM
400
600
V
Continuous on-state current at (or below) 25C ambient temperature (see Note 2)
I
T(RMS)
1
A
Surge on-state current at (or below) 25C ambient temperature (see Note 3)
I
TSM
15
A
Critical rate of rise of on-state current at 110C (see Note 4)
di/dt
100
A/s
Peak positive gate current (pulse width
300
s)
I
GM
0.2
A
Junction temperature range
T
J
-40 to +110
C
Storage temperature range
T
stg
-40 to +125
C
Lead temperature 3.2 mm from case for 10 seconds
T
L
230
C
TICP107 SERIES
SILICON CONTROLLED RECTIFIERS
2
JANUARY 1999 - REVISED JUNE 2000
P R O D U C T I N F O R M A T I O N
NOTE
5: This parameter must be measured using pulse techniques, t
p
= 1 ms, duty cycle
2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.
electrical characteristics at 25C ambient temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
I
DRM
Repetitive peak
off-state current
V
D
= rated V
DRM
R
GK
= 1 k
20
A
I
RRM
Repetitive peak
reverse current
V
R
= rated V
RRM
I
G
= 0
200
A
I
GT
Gate trigger current
V
AA
= 12 V
R
L
= 100
t
p(g)
20
s
50
200
A
V
GT
Gate trigger voltage
V
AA
= 12 V
R
L
= 100
t
p(g)
20 s
0.4
1
V
I
H
Holding current
V
AA
= 12 V
Initiating I
T
= 10 mA
2
mA
V
T
On-state voltage
I
T
= 2 A
(see Note 5)
1.4
V
3
JANUARY 1999 - REVISED JUNE 2000
TICP107 SERIES
SILICON CONTROLLED RECTIFIERS
P R O D U C T I N F O R M A T I O N
LP003 (TO-92)
3-pin cylindical plastic package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
ALL LINEAR DIMENSIONS IN MILLIMETERS
12,7 MIN.
2,03
2,67
4,44
5,21
3,43 MIN.
4,32
5,34
0,40
0,56
1,14
1,40
2,41
2,67
0,35
0,41
2,03
2,67
3,17
4,19
(see Note A)
Seating Plane
1
2
3
LP003 (TO-92)
LP003 Falls Within JEDEC
TO-226AA Dimensions
MDXXAX
1,27
NOTE A: Lead dimensions are not controlled in this area.
ALL LINEAR DIMENSIONS IN MILLIMETERS
12,7 MIN.
2,03
2,67
4,44
5,21
3,43 MIN.
4,32
5,34
0,40
0,56
1,14
1,40
2,41
2,67
0,35
0,41
2,03
2,67
3,17
4,19
(see Note A)
Seating Plane
1
2
3
LP003 (TO-92)
LP003 Falls Within JEDEC
TO-226AA Dimensions
MDXXAX
1,27
NOTE A: Lead dimensions are not controlled in this area.
TICP107 SERIES
SILICON CONTROLLED RECTIFIERS
4
JANUARY 1999 - REVISED JUNE 2000
P R O D U C T I N F O R M A T I O N
LP003 (TO-92)
3-pin cylindical plastic package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
LP003 (TO-92) - Formed Leads Version
ALL LINEAR DIMENSIONS IN MILLIMETERS
2,03
2,67
4,44
5,21
3,43 MIN.
4,32
5,34
0,40
0,56
2,40
2,90
0,35
0,41
2,03
2,67
3,17
4,19
4,00 MAX.
2,90
2,40
LP003 Falls Within JEDEC
TO-226AA Dimensions
1
2
3
MDXXAR
5
JANUARY 1999 - REVISED JUNE 2000
TICP107 SERIES
SILICON CONTROLLED RECTIFIERS
P R O D U C T I N F O R M A T I O N
LPR
tape dimensions
MECHANICAL DATA
LP Package (TO-92) Tape (Formed Lead Version)
ALL LINEAR DIMENSIONS IN MILLIMETERS
0,00
0,50
5,50
19,00
8,50
9,75
17,50
19,00
3,70
4,30
12,40
13,00
5,95
6,75
2,40
2,90
8,50
11,00
15,50
16,50
17,66
27,68
23,00
32,00
11,70
13,70
2,50 MIN.
2,90
2,40
4,44
5,21
2,03
2,67
3,43 MIN.
4,32
5,34
4,00 MAX.
0,40
0,56
3,17
4,19
2,03
2,67
0,35
0,41
MDXXAS
TICP107 SERIES
SILICON CONTROLLED RECTIFIERS
6
JANUARY 1999 - REVISED JUNE 2000
P R O D U C T I N F O R M A T I O N
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright 2000, Power Innovations Limited
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