TIP115, TIP116, TIP117
PNP SILICON POWER DARLINGTONS
P R O D U C T I N F O R M A T I O N
1
DECEMBER 1971 - REVISED MARCH 1997
Copyright 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
q
Designed for Complementary Use with
TIP110, TIP111 and TIP112
q
50 W at 25C Case Temperature
q
4 A Continuous Collector Current
q
Minimum h
FE
of 500 at 4 V, 2 A
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
absolute maximum ratings
at 25C case temperature (unless otherwise noted)
NOTES: 1. This value applies for t
p
0.3 ms, duty cycle
10%.
2. Derate linearly to 150C case temperature at the rate of 0.4 W/C.
3. Derate linearly to 150C free air temperature at the rate of 16 mW/C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= -5 mA, R
BE
= 100
,
V
BE(off)
= 0, R
S
= 0.1
, V
CC
= -20 V.
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (I
E
= 0)
TIP115
TIP116
TIP117
V
CBO
-60
-80
-100
V
Collector-emitter voltage (I
B
= 0)
TIP115
TIP116
TIP117
V
CEO
-60
-80
-100
V
Emitter-base voltage
V
EBO
-5
V
Continuous collector current
I
C
-4
A
Peak collector current (see Note 1)
I
CM
-6
A
Continuous base current
I
B
-50
mA
Continuous device dissipation at (or below) 25C case temperature (see Note 2)
P
tot
50
W
Continuous device dissipation at (or below) 25C free air temperature (see Note 3)
P
tot
2
W
Unclamped inductive load energy (see Note 4)
LI
C
2
25
mJ
Operating junction temperature range
T
j
-65 to +150
C
Storage temperature range
T
stg
-65 to +150
C
Lead temperature 3.2 mm from case for 10 seconds
T
L
260
C
TIP115, TIP116, TIP117
PNP SILICON POWER DARLINGTONS
2
DECEMBER 1971 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 s, duty cycle
2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
= -30 mA
(see Note 5)
I
B
= 0
TIP115
TIP116
TIP117
-60
-80
-100
V
I
CEO
Collector-emitter
cut-off current
V
CE
= -30 V
V
CE
= -40 V
V
CE
= -50 V
I
B
= 0
I
B
= 0
I
B
= 0
TIP115
TIP116
TIP117
-2
-2
-2
mA
I
CBO
Collector cut-off
current
V
CB
= -60 V
V
CB
= -80 V
V
CB
= -100 V
I
E
= 0
I
E
= 0
I
E
= 0
TIP115
TIP116
TIP117
-1
-1
-1
mA
I
EBO
Emitter cut-off
current
V
EB
= -5 V
I
C
= 0
-2
mA
h
FE
Forward current
transfer ratio
V
CE
= -4 V
V
CE
= -4 V
I
C
= -1 A
I
C
= -2 A
(see Notes 5 and 6)
1000
500
V
CE(sat)
Collector-emitter
saturation voltage
I
B
= -8 mA
I
C
= -2 A
(see Notes 5 and 6)
-2.5
V
V
BE
Base-emitter
voltage
V
CE
= -4 V
I
C
= -2 A
(see Notes 5 and 6)
-2.8
V
V
EC
Parallel diode
forward voltage
I
E
= -5 A
I
B
= 0
(see Notes 5 and 6)
-3.5
V
resistive-load-switching characteristics at 25C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
t
on
Turn-on time
I
C
= -2 A
V
BE(off)
= 5 V
I
B(on)
= -8 mA
R
L
= 15
I
B(off)
= 8 mA
t
p
= 20 s, dc
2%
2.6
s
t
off
Turn-off time
4.5
s
3
DECEMBER 1971 - REVISED MARCH 1997
TIP115, TIP116, TIP117
PNP SILICON POWER DARLINGTONS
P R O D U C T I N F O R M A T I O N
TYPICAL CHARACTERISTICS
Figure 1.
Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
-05
-50
-10
h
FE
- Typical DC Current Gain
20000
100
1000
10000
TCS115AA
T
C
= -40C
T
C
= 25C
T
C
= 100C
V
CE
= -4 V
t
p
= 300 s, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
-05
-50
-10
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
-20
-15
-10
-05
0
TCS115AB
t
p
= 300 s, duty cycle < 2%
I
B
= I
C
/ 100
T
C
= -40C
T
C
= 25C
T
C
= 100C
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
-05
-50
-10
V
BE(sat)
- Base-Emitter Saturation Voltage - V
-30
-25
-20
-15
-10
-05
TCS115AC
T
C
= -40C
T
C
= 25C
T
C
= 100C
I
B
= I
C
/ 100
t
p
= 300 s, duty cycle < 2%
TIP115, TIP116, TIP117
PNP SILICON POWER DARLINGTONS
4
DECEMBER 1971 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
MAXIMUM SAFE OPERATING REGIONS
Figure 4.
THERMAL INFORMATION
Figure 5.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
V
CE
- Collector-Emitter Voltage - V
-10
-10
-100
-1000
I
C
- Collector Current - A
-0.01
-01
-10
-10
SAS115AA
TIP115
TIP116
TIP117
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
T
C
- Case Temperature - C
0
25
50
75
100
125
150
P
tot
- Maximum Power Dissipation - W
0
10
20
30
40
50
60
TIS110AA
TIP115, TIP116, TIP117
PNP SILICON POWER DARLINGTONS
5
DECEMBER 1971 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
TO220
ALL LINEAR DIMENSIONS IN MILLIMETERS
1,23
1,32
4,20
4,70
1
2
3
0,97
0,61
see Note C
see Note B
10,0
10,4
2,54
2,95
6,0
6,6
14,55
15,90
12,7
14,1
3,5
6,1
1,07
1,70
2,34
2,74
4,88
5,28
3,71
3,96
0,41
0,64
2,40
2,90
VERSION 2
VERSION 1
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MDXXBE
PDF 
ZIP