TIP140, TIP141, TIP142
NPN SILICON POWER DARLINGTONS
P R O D U C T I N F O R M A T I O N
1
DECEMBER 1971 - REVISED MARCH 1997
Copyright 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
q
Designed for Complementary Use with
TIP145, TIP146 and TIP147
q
125 W at 25C Case Temperature
q
10 A Continuous Collector Current
q
Minimum h
FE
of 1000 at 4 V, 5 A
SOT-93 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRAA
B
C
E
1
2
3
absolute maximum ratings
at 25C case temperature (unless otherwise noted)
NOTES: 1. This value applies for t
p
0.3 ms, duty cycle
10%.
2. Derate linearly to 150C case temperature at the rate of 1 W/C.
3. Derate linearly to 150C free air temperature at the rate of 28 mW/C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= 5 mA, R
BE
= 100
,
V
BE(off)
= 0, R
S
= 0.1
, V
CC
= 20 V.
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (I
E
= 0)
TIP140
TIP141
TIP142
V
CBO
60
80
100
V
Collector-emitter voltage (I
B
= 0)
TIP140
TIP141
TIP142
V
CEO
60
80
100
V
Emitter-base voltage
V
EBO
5
V
Continuous collector current
I
C
10
A
Peak collector current (see Note 1)
I
CM
15
A
Continuous base current
I
B
0.5
A
Continuous device dissipation at (or below) 25C case temperature (see Note 2)
P
tot
125
W
Continuous device dissipation at (or below) 25C free air temperature (see Note 3)
P
tot
3.5
W
Unclamped inductive load energy (see Note 4)
LI
C
2
100
mJ
Operating junction temperature range
T
j
-65 to +150
C
Storage temperature range
T
stg
-65 to +150
C
Lead temperature 3.2 mm from case for 10 seconds
T
L
260
C
TIP140, TIP141, TIP142
NPN SILICON POWER DARLINGTONS
2
DECEMBER 1971 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 s, duty cycle
2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
= 30 mA
(see Note 5)
I
B
= 0
TIP140
TIP141
TIP142
60
80
100
V
I
CEO
Collector-emitter
cut-off current
V
CE
= 30 V
V
CE
= 40 V
V
CE
= 50 V
I
B
= 0
I
B
= 0
I
B
= 0
TIP140
TIP141
TIP142
2
2
2
mA
I
CBO
Collector cut-off
current
V
CB
= 60 V
V
CB
= 80 V
V
CB
= 100 V
I
E
= 0
I
E
= 0
I
E
= 0
TIP140
TIP141
TIP142
1
1
1
mA
I
EBO
Emitter cut-off
current
V
EB
= 5 V
I
C
= 0
2
mA
h
FE
Forward current
transfer ratio
V
CE
= 4 V
V
CE
= 4 V
I
C
= 5 A
I
C
= 10 A
(see Notes 5 and 6)
1000
500
V
CE(sat)
Collector-emitter
saturation voltage
I
B
= 10 mA
I
B
= 40 mA
I
C
= 5 A
I
C
= 10 A
(see Notes 5 and 6)
2
3
V
V
BE
Base-emitter
voltage
V
CE
= 4 V
I
C
= 10 A
(see Notes 5 and 6)
3
V
V
EC
Parallel diode
forward voltage
I
E
= 10 A
I
B
= 0
(see Notes 5 and 6)
3.5
V
resistive-load-switching characteristics at 25C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
t
on
Turn-on time
I
C
= 10 A
V
BE(off)
= -4.2 V
I
B(on)
= 40 mA
R
L
= 3
I
B(off)
= -40 mA
t
p
= 20 s, dc
2%
0.9
s
t
off
Turn-off time
11
s
3
DECEMBER 1971 - REVISED MARCH 1997
TIP140, TIP141, TIP142
NPN SILICON POWER DARLINGTONS
P R O D U C T I N F O R M A T I O N
TYPICAL CHARACTERISTICS
Figure 1.
Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
05
20
10
10
h
FE
- Typical DC Current Gain
70000
100
1000
10000
TCS140AA
V
CE
= 4 V
t
p
= 300 s, duty cycle < 2%
T
C
= -40C
T
C
= 25C
T
C
= 100C
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
05
20
10
10
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
0
05
10
15
20
TCS140AB
t
p
= 300 s, duty cycle < 2%
I
B
= I
C
/ 100
T
C
= -40C
T
C
= 25C
T
C
= 100C
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
05
20
10
10
V
BE(sat)
- Base-Emitter Saturation Voltage - V
0
05
10
15
20
25
30
TCS140AC
T
C
= -40C
T
C
= 25C
T
C
= 100C
I
B
= I
C
/ 100
t
p
= 300 s, duty cycle < 2%
TIP140, TIP141, TIP142
NPN SILICON POWER DARLINGTONS
4
DECEMBER 1971 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
MAXIMUM SAFE OPERATING REGIONS
Figure 4.
THERMAL INFORMATION
Figure 5.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
V
CE
- Collector-Emitter Voltage - V
10
10
100
1000
I
C
- Collector Current - A
01
10
10
100
SAS140AA
TIP140
TIP141
TIP142
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
T
C
- Case Temperature - C
0
25
50
75
100
125
150
P
tot
- Maximum Power Dissipation - W
0
20
40
60
80
100
120
140
TIS140AA
TIP140, TIP141, TIP142
NPN SILICON POWER DARLINGTONS
5
DECEMBER 1971 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
SOT-93
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
SOT-93
ALL LINEAR DIMENSIONS IN MILLIMETERS
4,90
4,70
1,37
1,17
0,78
0,50
2,50 TYP.
15,2
14,7
12,2 MAX.
16,2 MAX.
18,0 TYP.
31,0 TYP.
1,30
1,10
11,1
10,8
4,1
4,0
3,95
4,15
1
2
3
NOTE A: The centre pin is in electrical contact with the mounting tab.
MDXXAW
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