TIP145, TIP146, TIP147
PNP SILICON POWER DARLINGTONS
P R O D U C T I N F O R M A T I O N
1
DECEMBER 1971 - REVISED MARCH 1997
Copyright 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
q
Designed for Complementary Use with
TIP140, TIP141 and TIP142
q
125 W at 25C Case Temperature
q
10 A Continuous Collector Current
q
Minimum h
FE
of 1000 at 4 V, 5 A
SOT-93 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRAA
B
C
E
1
2
3
absolute maximum ratings
at 25C case temperature (unless otherwise noted)
NOTES: 1. This value applies for t
p
0.3 ms, duty cycle
10%.
2. Derate linearly to 150C case temperature at the rate of 1 W/C.
3. Derate linearly to 150C free air temperature at the rate of 28 mW/C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= -5 mA, R
BE
= 100
,
V
BE(off)
= 0, R
S
= 0.1
, V
CC
= -20 V.
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (I
E
= 0)
TIP145
TIP146
TIP147
V
CBO
-60
-80
-100
V
Collector-emitter voltage (I
B
= 0)
TIP145
TIP146
TIP147
V
CEO
-60
-80
-100
V
Emitter-base voltage
V
EBO
-5
V
Continuous collector current
I
C
-10
A
Peak collector current (see Note 1)
I
CM
-15
A
Continuous base current
I
B
-0.5
A
Continuous device dissipation at (or below) 25C case temperature (see Note 2)
P
tot
125
W
Continuous device dissipation at (or below) 25C free air temperature (see Note 3)
P
tot
3.5
W
Unclamped inductive load energy (see Note 4)
LI
C
2
100
mJ
Operating junction temperature range
T
j
-65 to +150
C
Storage temperature range
T
stg
-65 to +150
C
Lead temperature 3.2 mm from case for 10 seconds
T
L
260
C
TIP145, TIP146, TIP147
PNP SILICON POWER DARLINGTONS
2
DECEMBER 1971 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 s, duty cycle
2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
= -30 mA
(see Note 5)
I
B
= 0
TIP145
TIP146
TIP147
-60
-80
-100
V
I
CEO
Collector-emitter
cut-off current
V
CE
= -30 V
V
CE
= -40 V
V
CE
= -50 V
I
B
= 0
I
B
= 0
I
B
= 0
TIP145
TIP146
TIP147
-2
-2
-2
mA
I
CBO
Collector cut-off
current
V
CB
= -60 V
V
CB
= -80 V
V
CB
= -100 V
I
E
= 0
I
E
= 0
I
E
= 0
TIP145
TIP146
TIP147
-1
-1
-1
mA
I
EBO
Emitter cut-off
current
V
EB
= -5 V
I
C
= 0
-2
mA
h
FE
Forward current
transfer ratio
V
CE
= -4 V
V
CE
= -4 V
I
C
= -5 A
I
C
= -10 A
(see Notes 5 and 6)
1000
500
V
CE(sat)
Collector-emitter
saturation voltage
I
B
= -10 mA
I
B
= -40 mA
I
C
= -5 A
I
C
= -10 A
(see Notes 5 and 6)
-2
-3
V
V
BE
Base-emitter
voltage
V
CE
= -4 V
I
C
= -10 A
(see Notes 5 and 6)
-3
V
V
EC
Parallel diode
forward voltage
I
E
= -10 A
I
B
= 0
(see Notes 5 and 6)
-3.5
V
resistive-load-switching characteristics at 25C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
t
on
Turn-on time
I
C
= -10 A
V
BE(off)
= 4.2 V
I
B(on)
= -40 mA
R
L
= 3
I
B(off)
= 40 mA
t
p
= 20 s, dc
2%
0.9
s
t
off
Turn-off time
11
s
3
DECEMBER 1971 - REVISED MARCH 1997
TIP145, TIP146, TIP147
PNP SILICON POWER DARLINGTONS
P R O D U C T I N F O R M A T I O N
TYPICAL CHARACTERISTICS
Figure 1.
Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
-05
-20
-10
-10
h
FE
- Typical DC Current Gain
100
1000
10000
TCS145AA
T
C
= -40C
T
C
= 25C
T
C
= 100C
V
CE
= -4 V
t
p
= 300 s, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
-05
-20
-10
-10
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
-20
-15
-10
-05
0
TCS145AB
T
C
= -40C
T
C
= 25C
T
C
= 100C
t
p
= 300 s, duty cycle < 2%
I
B
= I
C
/ 100
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
-05
-20
-10
-10
V
BE(sat)
- Base-Emitter Saturation Voltage - V
-30
-25
-20
-10
-15
-05
0
TCS145AC
T
C
= -40C
T
C
= 25C
T
C
= 100C
I
B
= I
C
/ 100
t
p
= 300 s, duty cycle < 2%
TIP145, TIP146, TIP147
PNP SILICON POWER DARLINGTONS
4
DECEMBER 1971 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
MAXIMUM SAFE OPERATING REGIONS
Figure 4.
THERMAL INFORMATION
Figure 5.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
V
CE
- Collector-Emitter Voltage - V
-10
-10
-100
-1000
I
C
- Collector Current - A
-01
-10
-10
-100
SAS145AA
TIP145
TIP146
TIP147
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
T
C
- Case Temperature - C
0
25
50
75
100
125
150
P
tot
- Maximum Power Dissipation - W
0
20
40
60
80
100
120
140
TIS140AA
TIP145, TIP146, TIP147
PNP SILICON POWER DARLINGTONS
5
DECEMBER 1971 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
SOT-93
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
SOT-93
ALL LINEAR DIMENSIONS IN MILLIMETERS
4,90
4,70
1,37
1,17
0,78
0,50
2,50 TYP.
15,2
14,7
12,2 MAX.
16,2 MAX.
18,0 TYP.
31,0 TYP.
1,30
1,10
11,1
10,8
4,1
4,0
3,95
4,15
1
2
3
NOTE A: The centre pin is in electrical contact with the mounting tab.
MDXXAW
TIP145, TIP146, TIP147
PNP SILICON POWER DARLINGTONS
6
DECEMBER 1971 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright 1997, Power Innovations Limited
PDF 
ZIP