TIP47, TIP48, TIP49, TIP50
NPN SILICON POWER TRANSISTORS
P R O D U C T I N F O R M A T I O N
1
DECEMBER 1971 - REVISED MARCH 1997
Copyright 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
q
40 W at 25C Case Temperature
q
1 A Continuous Collector Current
q
2 A Peak Collector Current
q
20 mJ Reverse-Energy Rating
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
absolute maximum ratings
at 25C case temperature (unless otherwise noted)
NOTE
1: This value applies for t
p
1 ms, duty cycle
2%.
2. Derate linearly to 150C case temperature at the rate of 0.32 W/C.
3. Derate linearly to 150C free air temperature at the rate of 16 mW/C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= 0.4 A, R
BE
= 100
,
V
BE(off)
= 0, R
S
= 0.1
, V
CC
= 20 V.
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (I
E
= 0)
TIP47
TIP48
TIP49
TIP50
V
CBO
350
400
450
500
V
Collector-emitter voltage (I
B
= 0)
TIP47
TIP48
TIP49
TIP50
V
CEO
250
300
350
400
V
Emitter-base voltage
V
EBO
5
V
Continuous collector current
I
C
1
A
Peak collector current (see Note 1)
I
CM
2
A
Continuous base current
I
B
0.6
A
Continuous device dissipation at (or below) 25C case temperature (see Note 2)
P
tot
40
W
Continuous device dissipation at (or below) 25C free air temperature (see Note 3)
P
tot
2
W
Unclamped inductive load energy (see Note 4)
LI
C
2
20
mJ
Operating junction temperature range
T
j
-65 to +150
C
Storage temperature range
T
stg
-65 to +150
C
Lead temperature 3.2 mm from case for 10 seconds
T
L
260
C
TIP47, TIP48, TIP49, TIP50
NPN SILICON POWER TRANSISTORS
2
DECEMBER 1971 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 s, duty cycle
2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
= 30 mA
(see Note 5)
I
B
= 0
TIP47
TIP48
TIP49
TIP50
250
300
350
400
V
I
CES
Collector-emitter
cut-off current
V
CE
= 350 V
V
CE
= 400 V
V
CE
= 450 V
V
CE
= 500 V
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
TIP47
TIP48
TIP49
TIP50
1
1
1
1
mA
I
CEO
Collector cut-off
current
V
CE
= 150 V
V
CE
= 200 V
V
CE
= 250 V
V
CE
= 300 V
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
TIP47
TIP48
TIP49
TIP50
1
1
1
1
mA
I
EBO
Emitter cut-off
current
V
EB
= 5 V
I
C
= 0
1
mA
h
FE
Forward current
transfer ratio
V
CE
= 10 V
V
CE
= 10 V
I
C
= 0.3 A
I
C
= 1 A
(see Notes 5 and 6)
30
10
150
V
CE(sat)
Collector-emitter
saturation voltage
I
B
= 0.2 A
I
C
= 1 A
(see Notes 5 and 6)
1
V
V
BE
Base-emitter
voltage
V
CE
= 10 V
I
C
= 1 A
(see Notes 5 and 6)
1.5
V
h
fe
Small signal forward
current transfer ratio
V
CE
= 10 V
I
C
= 0.2 A
f = 1 kHz
25
|
h
fe
|
Small signal forward
current transfer ratio
V
CE
= 10 V
I
C
= 0.2 A
f = 2 MHz
5
resistive-load-switching characteristics at 25C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
t
on
Turn on time
I
C
= 1 A
V
BE(off)
= -5 V
I
B(on)
= 0.1 A
R
L
= 200
I
B(off)
= -0.1 A
(see Figures 1 and 2)
0.2
s
t
off
Turn off time
2
s
3
DECEMBER 1971 - REVISED MARCH 1997
TIP47, TIP48, TIP49, TIP50
NPN SILICON POWER TRANSISTORS
P R O D U C T I N F O R M A T I O N
PARAMETER MEASUREMENT INFORMATION
Figure 1. Resistive-Load Switching Test Circuit
Figure 2. Resistive-Load Switching Waveforms
tp
F
100
V
1
680
F
V1
V cc = 250 V
+25 V
BD135
47
100
120
15
82
100
BD136
680
F
TUT
T
t
p
= 20
s
Duty cycle = 1%
V
1
= 15 V, Source Impedance = 50
V
CC
0%
C
B
90%
10%
A
10%
90%
10%
90%
E
F
D
I B
IC
I
B(on)
I B(off)
0%
dI
B
dt
2 A/
s
A - B = t
d
B - C = t
r
E - F = t
f
D - E = t
s
A - C = t
on
D - F = t
off
TIP47, TIP48, TIP49, TIP50
NPN SILICON POWER TRANSISTORS
4
DECEMBER 1971 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
TYPICAL CHARACTERISTICS
Figure 3.
Figure 4.
Figure 5.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
0.01
0.1
1
h
FE
- Typical DC Current Gain
0
10
20
30
40
50
TCP770AA
V
CE
= 10 V
T
C
= 25C
t
p
= 300 s, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
001
01
1
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
0
01
02
03
TCP770AB
I
C
/ I
B
= 5
T
C
= 25C
t
p
= 300 s, duty cycle < 2%
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
001
01
10
V
BE(sat)
- Base-Emitter Saturation Voltage - V
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
TCP770AC
V
CE
= 10 V
T
C
= 25C
t
p
= 300 s, duty cycle < 2%
5
DECEMBER 1971 - REVISED MARCH 1997
TIP47, TIP48, TIP49, TIP50
NPN SILICON POWER TRANSISTORS
P R O D U C T I N F O R M A T I O N
MAXIMUM SAFE OPERATING REGIONS
Figure 6.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
V
CE
- Collector-Emitter Voltage - V
10
10
100
1000
I
C
- Collector Current - A
001
0.1
10
10
SAP770AA
t
p
= 100
s
t
p
= 500
s
t
p
= 1 ms
DC Operation
TIP47
TIP48
TIP49
TIP50
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