TISP1082
DUAL ASYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
P R O D U C T I N F O R M A T I O N
1
NOVEMBER 1986 - REVISED SEPTEMBER 1997
Copyright 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION
q
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
q
Planar Passivated Junctions
Low Off-State Current < 10 A
q
Rated for International Surge Wave Shapes
q
UL Recognized, E132482
description
The TISP1082 is designed specifically for
telephone line card protection against lightning
and transients induced by a.c. power lines.
These devices will supress voltage transients
between terminals A and C, B and C, and A and
B.
Negative transients are initially clipped by zener
action until the voltage rises to the breakover
level, which causes the device to crowbar. The
high crowbar holding current prevents d.c.
latchup as the transient subsides. Positive
transients are clipped by diode action.
DEVICE
V
(Z)
V
V
(BO)
V
`1082
- 58
- 82
WAVE SHAPE
STANDARD
I
TSP
A
8/20 s
ANSI C62.41
150
10/160 s
FCC Part 68
60
10/560 s
FCC Part 68
45
0.2/310 s
RLM 88
38
10/700 s
FTZ R12
VDE 0433
CCITT IX K17/K20
50
50
50
10/1000 s
REA PE-60
50
These monolithic protection devices are
fabricated in ion-implanted planar structures to
ensure precise and matched breakover control
and are virtually transparent to the system in
normal operation.
device symbol
TO-220 PACKAGE
(TOP VIEW)
A(T)
C(G)
B(R)
Pin 2 is in electrical contact with the mounting base.
MDXXANA
1
2
3
C(G)
A(T)
B(R)
TISP1082
DUAL ASYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
2
NOVEMBER 1986 - REVISED SEPTEMBER 1997
P R O D U C T I N F O R M A T I O N
absolute maximum ratings at
25C case temperature (unless otherwise noted)
NOTES: 1. Above 70C, derate linearly to zero at 150C case temperature
2. This value applies when the initial case temperature is at (or below) 70C. The surge may be repeated after the device has
returned to thermal equilibrium.
3. Most PTT's quote an unloaded voltage waveform. In operation the TISP essentially shorts the generator output. The resulting
loaded current waveform is specified.
.
NOTE
4: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.
NOTES: 5. These parameters must be measured using pulse techniques, t
w
= 100
s, duty cycle
2%.
6. These parameters are measured with voltage sensing contacts seperate from the current carrying contacts located within 3.2 mm
(0.125 inch) from the device body.
7. Linear rate of rise, maximum voltage limited to 80 % V
Z
(minimum)..
RATING
SYMBOL
VALUE
UNIT
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3)
I
TSP
A
8/20 s (ANSI C62.41, open-circuit voltage wave shape 1.2/50 s)
150
10/160 s (FCC Part 68, open-circuit voltage wave shape 10/160 s)
60
5/200 s (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 s)
50
0.2/310 s (RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 s)
38
5/310 s (CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 s)
50
5/310 s (FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 s)
50
10/560 s (FCC Part 68, open-circuit voltage wave shape 10/560 s)
45
10/1000 s (REA PE-60, open-circuit voltage wave shape 10/1000 s)
50
Non-repetitive peak on-state current, 50 Hz, 2.5 s (see Notes 1 and 2)
I
TSM
10
A rms
Initial rate of rise of on-state current,
Linear current ramp, Maximum ramp value < 38 A
di
T
/dt
250
A/s
Junction temperature
T
J
150
C
Operating free - air temperature range
0 to 70
C
Storage temperature range
T
stg
-40 to +150
C
Lead temperature 1.5 mm from case for 10 s
T
lead
260
C
electrical characteristics for the A and B terminals, T
J
= 25C
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
Z
Reference zener
voltage
I
Z
=
1mA
58
V
I
D
Off-state leakage
current
V
D
=
50 V
10
A
C
off
Off-state capacitance
V
D
=
0
f = 1 kHz
(see Note 4)
1
5
pF
electrical characteristics for the A and C or the B and C terminals, T
J
= 25C
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
Z
Reference zener
voltage
I
Z
= - 1mA
- 58
V
V
Z
Temperature coefficient
of reference voltage
0.1
%/
o
C
V
(BO)
Breakover voltage
(see Notes 5 and 6)
- 82
V
I
(BO)
Breakover current
(see Note 5)
- 0.15
- 0.6
A
V
F
Forward voltage
I
F
= 5 A
(see Notes 5 and 6)
3
V
V
TM
Peak on-state voltage
I
T
=
- 5 A
(see Notes 5 and 6)
- 2.2
- 3
V
I
H
Holding current
(see Note 5)
- 150
mA
dv/dt
Critical rate of rise of
off-state voltage
(see Note 7)
- 5
kV/
s
I
D
Off-state leakage
current
V
D
= - 50 V
- 10
A
C
off
Off-state capacitance
V
D
= 0
f = 1 kHz
(see Note 4)
300
500
pF
TISP1082
DUAL ASYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
4
NOVEMBER 1986 - REVISED SEPTEMBER 1997
P R O D U C T I N F O R M A T I O N
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
JA
Junction to free air thermal resistance
62.5
C/W
TYPICAL CHARACTERISTICS
A and C, or B and C terminals
Figure 3.
Figure 4.
ON-STATE AND FORWARD CURRENTS
V
T
, V
F
- On-State Voltage, Forward Voltage - V
1
10
100
I
T
,
I
F
-
O
n
-
S
t
a
t
e
C
u
r
r
e
n
t
,
F
o
r
w
a
r
d
C
u
r
r
e
n
t
-
A
1
10
100
1000
TCR1LAA
ON-STATE AND FORWARD VOLTAGES
vs
I
F
I
T
I
T
I
F
ZENER AND BREAKOVER VOLTAGE
T
J
- Junction Temperature - C
-25
0
25
50
75
100
125
150
V
Z
,
V
(
B
O
)
-
Z
e
n
e
r
V
o
l
t
a
g
e
,
B
r
e
a
k
o
v
e
r
V
o
l
t
a
g
e
-
V
55
65
75
85
60
70
80
TCR1LAB
V
(BO)
V
(BO)
V
Z
V
Z
JUNCTION TEMPERATURE
vs
5
NOVEMBER 1986 - REVISED SEPTEMBER 1997
TISP1082
DUAL ASYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
P R O D U C T I N F O R M A T I O N
TYPICAL CHARACTERISTICS
A and C, or B and C terminals
Figure 5.
Figure 6.
Figure 7.
Figure 8.
HOLDING CURRENT & BREAKOVER CURRENT
T
J
- Junction Temperature - C
-25
0
25
50
75
100
125
150
I
H
,
I
(
B
O
)
-
H
o
l
d
i
n
g
C
u
r
r
e
n
t
,
B
r
e
a
k
o
v
e
r
C
u
r
r
e
n
t
-
A
001
01
1
TCR1LAC
I
H
I
H
I
(BO)
I
(BO)
JUNCTION TEMPERATURE
vs
OFF-STATE CURRENT
T
J
- Junction Temperature - C
-25
0
25
50
75
100
125
150
I
D
-
O
f
f
-
S
t
a
t
e
C
u
r
r
e
n
t
-
A
0001
001
01
1
10
TCR1LAD
JUNCTION TEMPERATURE
vs
V
D
= -50 V
ON-STATE VOLTAGE & FORWARD VOLTAGE
T
J
- Junction Temperature - C
-25
0
25
50
75
100
125
150
V
T
,
V
F
-
O
n
-
S
t
a
t
e
V
o
l
t
a
g
e
,
F
o
r
w
a
r
d
V
o
l
t
a
g
e
-
V
0.5
1.5
2.5
0.0
1.0
2.0
3.0
TCR1LAE
I
F
= 5A
I
T
= -5A
V
T
V
F
JUNCTION TEMPERATURE
vs
NORMALISED BREAKOVER VOLTAGE
di/dt - Rate of Rise of Principle Current - A/s
0001
001
01
1
10
100
N
o
r
m
a
l
i
s
e
d
B
r
e
a
k
o
v
e
r
V
o
l
t
a
g
e
1.25
1.75
1.00
1.50
2.00
TCR1LAI
RATE OF RISE OF PRINCIPLE CURRENT
vs
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