TISP2125F3, TISP2150F3, TISP2180F3
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
P R O D U C T I N F O R M A T I O N
1
MARCH 1994 - REVISED SEPTEMBER 1997
Copyright 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION
q
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
q
Planar Passivated Junctions
Low Off-State Current
< 10 A
q
Rated for International Surge Wave Shapes
q
Surface Mount and Through-Hole Options
q
UL Recognized, E132482
description
These medium voltage dual symmetrical
transient voltage suppressor devices are
designed to protect ISDN and telecommunication
applications with battery backed ringing against
transients caused by lightning strikes and a.c.
power lines. Offered in three voltage variants to
meet battery and protection requirements they
are guaranteed to suppress and withstand the
listed international lightning surges in both
polarities. Transients are initially clipped by
breakdown clamping until the voltage rises to the
breakover level, which causes the device to
DEVICE
V
DRM
V
V
(BO)
V
`2125F3
100
125
`2150F3
120
150
`2180F3
145
180
WAVE SHAPE
STANDARD
I
TSP
A
2/10 s
FCC Part 68
175
8/20 s
ANSI C62.41
120
10/160 s
FCC Part 68
60
10/560 s
FCC Part 68
45
0.5/700 s
RLM 88
38
10/700 s
FTZ R12
VDE 0433
CCITT IX K17/K20
50
50
50
10/1000 s
REA PE-60
35
PACKAGE
PART # SUFFIX
Small-outline
D
Small-outline taped
and reeled
DR
Plastic DIP
P
Single-in-line
SL
crowbar. The high crowbar holding current
prevents d.c. latchup as the current subsides.
These monolithic protection devices are
fabricated in ion-implanted planar structures to
ensure precise and matched breakover control
device symbol
D PACKAGE
(TOP VIEW)
P PACKAGE
(TOP VIEW)
SL PACKAGE
(TOP VIEW)
MDXXAE
1
2
3
4
5
6
7
8
G
G
G
G
NC
T
R
NC
NC - No internal connection
1
2
3
4
5
6
7
8
R
G
T
G
T
G
G
R
Specified T terminal ratings require connection of pins 1 and 8.
Specified R terminal ratings require connection of pins 4 and 5.
MDXXAF
1
2
3
T
G
R
MDXXAG
MD23AA
G
T
R
Terminals T, R and G correspond to the
alternative line designators of A, B and C
SD2XAA
TISP2125F3, TISP2150F3, TISP2180F3
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
2
MARCH 1994 - REVISED SEPTEMBER 1997
P R O D U C T I N F O R M A T I O N
and are virtually transparent to the system in normal operation
The small-outline 8-pin assignment has been carefully chosen for the TISP series to maximise the inter-pin
clearance and creepage distances which are used by standards (e.g. IEC950) to establish voltage withstand
ratings.
absolute maximum ratings
NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section.
2. Initially the TISP must be in thermal equilibrium with 0C < T
J
<70C. The surge may be repeated after the TISP returns to its initial
conditions.
3. Above 70C, derate linearly to zero at 150C lead temperature.
NOTES: 4. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.
5. Further details on capacitance are given in the Applications Information section.
Typical value of the parameter, not a limit value.
RATING
SYMBOL
VALUE
UNIT
Repetitive peak off-state voltage (0C < T
J
< 70C)
`2125F3
`2125F3
`2180F3
V
DRM
100
120
145
V
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3)
I
TSP
A
1/2 s (Gas tube differential transient, open-circuit voltage wave shape 1/2 s)
350
2/10 s (FCC Part 68, open-circuit voltage wave shape 2/10 s)
175
8/20 s (ANSI C62.41, open-circuit voltage wave shape 1.2/50 s)
120
10/160 s (FCC Part 68, open-circuit voltage wave shape 10/160 s)
60
5/200 s (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 s)
50
0.5/310 s (RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 s)
38
5/310 s (CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 s)
50
5/310 s (FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 s)
50
10/560 s (FCC Part 68, open-circuit voltage wave shape 10/560 s)
45
10/1000 s (REA PE-60, open-circuit voltage wave shape 10/1000 s)
35
Non-repetitive peak on-state current (see Notes 2 and 3)
D Package
I
TSM
4
A rms
50 Hz,
1 s
P Package
6
SL Package
6
Initial rate of rise of on-state current,
Linear current ramp, Maximum ramp value < 38 A
di
F
/dt
250
A/s
Junction temperature
T
J
-40 to +150
C
Storage temperature range
T
stg
-40 to +150
C
electrical characteristics for the T and R terminals, T
J
= 25C
PARAMETER
TEST CONDITIONS
TISP2125F3
TISP2150F3
TISP2180F3
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
I
DRM
Repetitive peak off-
state current
V
D
= V
DRM
, 0C < T
J
< 70C
10
10
10
A
I
D
Off-state current
V
D
= 50 V
10
10
10
A
C
off
Off-state capacitance
f = 100 kHz,
V
d
= 100 mV
V
D
= 0,
Third terminal voltage = 0
(see Notes 4 and 5)
20
35
20
35
20
35
pF
description (Continued)
3
MARCH 1994 - REVISED SEPTEMBER 1997
TISP2125F3, TISP2150F3, TISP2180F3
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
P R O D U C T I N F O R M A T I O N
NOTES: 6
These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.
7. Further details on capacitance are given in the Applications Information section.
Typical value of the parameter, not a limit value.
electrical characteristics for the T and G or the R and G terminals, T
J
= 25C
PARAMETER
TEST CONDITIONS
TISP2125F3
TISP2150F3
TISP2180F3
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
I
DRM
Repetitive peak off-
state current
V
D
= V
DRM
, 0C < T
J
< 70C
10
10
10
A
V
(BO)
Breakover voltage
dv/dt = 250 V/ms,
Source Resistance = 300
125
150
180
V
V
(BO)
Impulse breakover volt-
age
dv/dt = 1000 V/s,
di/dt < 20 A/s
Source Resistance = 50
143
168
198
V
I
(BO)
Breakover current
dv/dt = 250 V/ms,
Source Resistance = 300
0.15
0.6
0.15
0.6
0.15
0.6
A
V
T
On-state voltage
I
T
= 5 A,
t
W
= 100 s
3
3
3
V
I
H
Holding current
di/dt = -/+30 mA/ms
0.15
0.15
0.15
A
dv/dt
Critical rate of rise of
off-state voltage
Linear voltage ramp,
Maximum ramp value < 0.85V
(BR)MIN
5
5
5
kV/s
I
D
Off-state current
V
D
= 50 V
10
10
10
A
C
off
Off-state capacitance
f = 100 kHz,
V
d
= 100 mV
V
D
= 0,
52
90
52
90
52
90
pF
Third terminal voltage = 0
V
D
= -5 V
26
45
26
45
26
45
pF
(see Notes 6 and 7)
V
D
= -50 V
11
20
11
20
11
20
pF
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
JA
Junction to free air thermal resistance
D Package
160
C/W
P Package
100
SL Package
105
TISP2125F3, TISP2150F3, TISP2180F3
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
4
MARCH 1994 - REVISED SEPTEMBER 1997
P R O D U C T I N F O R M A T I O N
PARAMETER MEASUREMENT INFORMATION
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR ANY PAIR OF TERMINALS
The high level characteristics for terminals R and T are not guaranteed.
-v
I
(BR)
V
(BR)
V
(BR)M
V
DRM
I
DRM
V
D
I
H
I
T
V
T
I
TSM
I
TSP
V
(BO)
I
(BO)
I
D
Quadrant I
Switching
Characteristic
+v
+i
V
(BO)
I
(BO)
I
(BR)
V
(BR)
V
(BR)M
V
DRM
I
DRM
V
D
I
D
I
H
I
T
V
T
I
TSM
I
TSP
-i
Quadrant III
Switching
Characteristic
PMXXAA
5
MARCH 1994 - REVISED SEPTEMBER 1997
TISP2125F3, TISP2150F3, TISP2180F3
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
P R O D U C T I N F O R M A T I O N
TYPICAL CHARACTERISTICS
T and G, or R and G terminals
Figure 2.
Figure 3.
OFF-STATE CURRENT
T
J
- Junction Temperature - C
-25
0
25
50
75
100
125
150
I
D
-
O
f
f
-
S
t
a
t
e
C
u
r
r
e
n
t
-
A
0001
001
01
1
10
100
TC2MAL
JUNCTION TEMPERATURE
vs
V
D
= -50 V
V
D
= 50 V
NORMALISED BREAKDOWN VOLTAGES
T
J
- Junction Temperature - C
-25
0
25
50
75
100
125
150
N
o
r
m
a
l
i
s
e
d
B
r
e
a
k
d
o
w
n
V
o
l
t
a
g
e
s
0.9
1.0
1.1
1.2
TC2MAO
JUNCTION TEMPERATURE
vs
V
(BO)
V
(BR)
V
(BR)M
Positive Polarity
Normalised to V
(BR)
I
(BR)
= 100 A and 25C
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