TISP2290
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
P R O D U C T I N F O R M A T I O N
1
NOVEMBER 1986 - REVISED SEPTEMBER 1997
Copyright 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION
q
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
q
Planar Passivated Junctions
Low Off-State Current
< 10 A
q
Rated for International Surge Wave Shapes
q
UL Recognized, E132482
description
The TISP2290 is designed specifically for
telephone equipment protection against lightning
and transients induced by a.c. power lines.
These devices will supress voltage transients
between terminals A and C, B and C, and A and
B.
Transients are initially clipped by zener action
until the voltage rises to the breakover level,
which causes the device to crowbar. The high
crowbar holding current prevents d.c. latchup as
the transient subsides.
DEVICE
V
(Z)
V
V
(BO)
V
`2290
200
290
WAVE SHAPE
STANDARD
I
TSP
A
8/20 s
ANSI C62.41
150
10/160 s
FCC Part 68
60
10/560 s
FCC Part 68
45
0.2/310 s
RLM 88
38
10/700 s
FTZ R12
VDE 0433
CCITT IX K17/K20
50
50
50
10/1000 s
REA PE-60
50
These monolithic protection devices are
fabricated in ion-implanted planar structures to
ensure precise and matched breakover control
and are virtually transparent to the system in
normal operation.
device symbol
TO-220 PACKAGE
(TOP VIEW)
A(T)
C(G)
B(R)
Pin 2 is in electrical contact with the mounting base.
MDXXANA
1
2
3
TISP2290
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
2
NOVEMBER 1986 - REVISED SEPTEMBER 1997
P R O D U C T I N F O R M A T I O N
absolute maximum ratings at
25C case temperature (unless otherwise noted)
NOTES: 1. Above 70C, derate linearly to zero at 150C case temperature
2. This value applies when the initial case temperature is at (or below) 70C. The surge may be repeated after the device has
returned to thermal equilibrium.
3. Most PTT's quote an unloaded voltage waveform. In operation the TISP essentially shorts the generator output. The resulting
loaded current waveform is specified.
.
NOTE
4: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.
NOTES: 5. These parameters must be measured using pulse techniques, t
w
= 100
s, duty cycle
2%.
6. These parameters are measured with voltage sensing contacts seperate from the current carrying contacts located within 3.2 mm
(0.125 inch) from the device body.
7. Linear rate of rise, maximum voltage limited to 80 % V
Z
(minimum)..
RATING
SYMBOL
VALUE
UNIT
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3)
I
TSP
A
8/20 s (ANSI C62.41, open-circuit voltage wave shape 1.2/50 s)
150
10/160 s (FCC Part 68, open-circuit voltage wave shape 10/160 s)
60
5/200 s (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 s)
50
0.2/310 s (RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 s)
38
5/310 s (CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 s)
50
5/310 s (FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 s)
50
10/560 s (FCC Part 68, open-circuit voltage wave shape 10/560 s)
45
10/1000 s (REA PE-60, open-circuit voltage wave shape 10/1000 s)
50
Non-repetitive peak on-state current, 50 Hz, 2.5 s (see Notes 1 and 2)
I
TSM
10
A rms
Initial rate of rise of on-state current,
Linear current ramp, Maximum ramp value < 38 A
di
T
/dt
250
A/s
Junction temperature
T
J
150
C
Operating free - air temperature range
0 to 70
C
Storage temperature range
T
stg
-40 to +150
C
Lead temperature 1.5 mm from case for 10 s
T
lead
260
C
electrical characteristics for the A and B terminals, T
J
= 25C
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
Z
Reference zener
voltage
I
Z
=
1mA
200
V
I
D
Off-state leakage
current
V
D
=
50 V
10
A
C
off
Off-state capacitance
V
D
=
0
f = 1 kHz
(see Note 4)
40
100
pF
electrical characteristics for the A and C or the B and C terminals, T
J
= 25C
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
Z
Reference zener
voltage
I
Z
=
1mA
200
V
V
Z
Temperature coefficient
of reference voltage
0.1
%/
o
C
V
(BO)
Breakover voltage
(see Notes 5 and 6)
290
V
I
(BO)
Breakover current
(see Note 5)
0.15
0.6
A
V
TM
Peak on-state voltage
I
T
=
5 A
(see Notes 5 and 6)
1.9
3
V
I
H
Holding current
(see Note 5)
150
mA
dv/dt
Critical rate of rise of
off-state voltage
(see Note 7)
5
kV/
s
I
D
Off-state leakage
current
V
D
=
50 V
10
A
C
off
Off-state capacitance
V
D
= 0
f = 1 kHz
(see Note 4)
110
200
pF
5
NOVEMBER 1986 - REVISED SEPTEMBER 1997
TISP2290
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
P R O D U C T I N F O R M A T I O N
TYPICAL CHARACTERISTICS
A and C, or B and C terminals
Figure 4.
Figure 5.
Figure 6.
Figure 7.
HOLDING CURRENT & BREAKOVER CURRENT
T
J
- Junction Temperature - C
-25
0
25
50
75
100
125
150
I
H
,
I
(
B
O
)
-
H
o
l
d
i
n
g
C
u
r
r
e
n
t
,
B
r
e
a
k
o
v
e
r
C
u
r
r
e
n
t
-
A
001
01
1
TCS2HAC
JUNCTION TEMPERATURE
vs
I
(BO)
I
H
OFF-STATE CURRENT
T
J
- Junction Temperature - C
-25
0
25
50
75
100
125
150
I
D
-
O
f
f
-
S
t
a
t
e
C
u
r
r
e
n
t
-
A
0001
001
01
1
10
TCS2HAD
JUNCTION TEMPERATURE
vs
VD = 50 V
ON-STATE VOLTAGE
T
J
- Junction Temperature - C
-25
0
25
50
75
100
125
150
V
T
-
O
n
-
S
t
a
t
e
V
o
l
t
a
g
e
-
V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
TCS2HAE
JUNCTION TEMPERATURE
vs
I
T
= 5A
NORMALISED BREAKOVER VOLTAGE
di/dt - Rate of Rise of Principle Current - A/s
0001
001
01
1
10
100
N
o
r
m
a
l
i
s
e
d
B
r
e
a
k
o
v
e
r
V
o
l
t
a
g
e
1.0
1.1
1.2
1.3
1.4
TCS2HAI
vs
RATE OF RISE OF PRINCIPLE CURRENT
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