TISP3070H3SL THRU TISP3095H3SL, TISP3125H3SL THRU TISP3210H3SL
TISP3250H3SL THRU TISP3350H3SL
DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
P R O D U C T I N F O R M A T I O N
1
JANUARY 1999 - REVISED MAY 1999
Copyright 1999, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
TELECOMMUNICATION SYSTEM 2x100 A 10/1000 OVERVOLTAGE PROTECTORS
q
Ion-Implanted Breakdown Region
- Precise DC and Dynamic Voltages
q
Rated for International Surge Wave Shapes
- Guaranteed -40 C to +85 C Performance
DEVICE
V
DRM
V
V
(BO)
V
`3070
58
70
`3080
65
80
`3095
75
95
`3125
100
125
`3135
110
135
`3145
120
145
`3180
145
180
`3210
160
210
`3250
190
250
`3290
220
290
`3350
275
350
WAVE SHAPE
STANDARD
I
TSP
A
2/10 s
GR-1089-CORE
500
8/20 s
IEC 61000-4-5
300
10/160 s
FCC Part 68
250
10/700 s
FCC Part 68
ITU-T K20/21
200
10/560 s
FCC Part 68
160
10/1000 s
GR-1089-CORE
100
q
3-Pin Through-Hole Packaging
- Compatible with TO-220AB pin-out
- Low Height. . . . . . . . . . . . . . . . . . . . .8.3 mm
q
Low Differential Capacitance
- Value at -2 V/-50 V Bias. . . . . . . .67 pF max.
description
The TISP3xxxH3SL limits overvoltages between the telephone line Ring and Tip conductors and Ground.
Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or
conducted on to the telephone line.
The protector consists of two symmetrical voltage-triggered bidirectional thyristors. Overvoltages are initially
clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to
crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the
overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup
as the diverted current subsides.
This TISP3xxxH3SL range consists of eleven voltage variants to meet various maximum system voltage
levels (58 V to 275 V). They are guaranteed to voltage limit and withstand the listed international lightning
surges in both polarities. These high current protection devices are in a 3-pin single-in-line (SL) plastic
package and are supplied in tube pack. For alternative impulse rating, voltage and holding current values in
SL packaged protectors, consult the factory. For lower rated impulse currents in the SL package, the 35 A
10/1000 TISP3xxxF3SL series is available.
These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and
matched breakover control and are virtually transparent to the system in normal operation.
device symbol
G
T
R
SD3XAA
Terminals T, R and G correspond to the
alternative line designators of A, B and C
SL PACKAGE
(TOP VIEW)
1
2
3
T
G
R
MDXXAG
TISP3070H3SL THRU TISP3095H3SL, TISP3125H3SL THRU TISP3210H3SL
TISP3250H3SL THRU TISP3350H3SL
DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
2
JANUARY 1999 - REVISED MAY 1999
P R O D U C T I N F O R M A T I O N
absolute maximum ratings, T
A
= 25C (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Repetitive peak off-state voltage, (see Note 1)
`3070
`3080
`3095
`3125
`3135
`3145
`3180
`3210
`3250
`3290
`3350
V
DRM
58
65
75
100
110
120
145
160
190
220
275
V
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
I
TSP
A
2/10 s (GR-1089-CORE, 2/10 s voltage wave shape)
500
8/20 s (IEC 61000-4-5, 1.2/50 s voltage, 8/20 current combination wave generator)
300
10/160 s (FCC Part 68, 10/160 s voltage wave shape)
250
5/200 s (VDE 0433, 10/700 s voltage wave shape)
220
0.2/310 s (I3124, 0.5/700 s voltage wave shape)
200
5/310 s (ITU-T K20/21, 10/700 s voltage wave shape)
200
5/310 s (FTZ R12, 10/700 s voltage wave shape)
200
5/320 s (FCC Part 68, 9/720 s voltage wave shape)
200
10/560 s (FCC Part 68, 10/560 s voltage wave shape)
160
10/1000 s (GR-1089-CORE, 10/1000 s voltage wave shape)
100
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
I
TSM
55
60
1
A
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current,
Exponential current ramp, Maximum ramp value < 200 A
di
T
/dt
400
A/s
Junction temperature
T
J
-40 to +150
C
Storage temperature range
T
stg
-65 to +150
C
NOTES: 1. See Figure 9 for voltage values at lower temperatures.
2. Initially the TISP3xxxH3SL must be in thermal equilibrium.
3. These non-repetitive rated currents are peak values of either polarirty. The rated current values may be applied to the R or T
terminals. Additionally, both R and T terminals may have their rated current values applied simultaneously (in this case the G
terminal return current will be the sum of the currents applied to the R and T terminals). The surge may be repeated after the
TISP3xxxH3SL returns to its initial conditions.
4. See Figure 10 for impulse current ratings at other temperatures. Above 85 C, derate linearly to zero at 150 C lead temperature.
5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 8 for the current ratings at other durations. Figure 8 shows the R and T terminal current rating for
simulateous operation. In this condition, the G terminal current will be 2xI
TSM(t)
, the sum of the R and T terminal currents. Derate
current values at -0.61 %/C for ambient temperatures above 25 C.
3
JANUARY 1999 - REVISED MAY 1999
TISP3070H3SL THRU TISP3095H3SL, TISP3125H3SL THRU TISP3210H3SL
TISP3250H3SL THRU TISP3350H3SL
DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
P R O D U C T I N F O R M A T I O N
electrical characteristics for the R and G or T and G terminals, T
A
= 25C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
I
DRM
Repetitive peak off-
state current
V
D
= V
DRM
T
A
= 25C
T
A
= 85C
5
10
A
V
(BO)
Breakover voltage
dv/dt = 750 V/ms,
R
SOURCE
= 300
`3070
`3080
`3095
`3125
`3135
`3145
`3180
`3210
`3250
`3290
`3350
70
80
95
125
135
145
180
210
250
290
350
V
V
(BO)
Impulse breakover
voltage
dv/dt
1000 V/s, Linear voltage ramp,
Maximum ramp value = 500 V
di/dt = 20 A/s, Linear current ramp,
Maximum ramp value = 10 A
`3070
`3080
`3095
`3125
`3135
`3145
`3180
`3210
`3250
`3290
`3350
78
88
103
134
144
154
189
220
261
302
362
V
I
(BO)
Breakover current
dv/dt = 750 V/ms,
R
SOURCE
= 300
0.15
0.6
A
V
T
On-state voltage
I
T
= 5 A, t
W
= 100 s
3
V
I
H
Holding current
I
T
= 5 A, di/dt = +/-30 mA/ms
0.15
0.6
A
dv/dt
Critical rate of rise of
off-state voltage
Linear voltage ramp, Maximum ramp value < 0.85V
DRM
5
kV/s
I
D
Off-state current
V
D
= 50 V
T
A
= 85C
10
A
C
off
Off-state capacitance
f = 100 kHz,
V
d
= 1 V rms, V
D
= 0,
f = 100 kHz,
V
d
= 1 V rms, V
D
= -1 V
f = 100 kHz,
V
d
= 1 V rms, V
D
= -2 V
f = 100 kHz,
V
d
= 1 V rms, V
D
= -50 V
f = 100 kHz,
V
d
= 1 V rms, V
D
= -100 V
(see Note 6)
`3070 thru `3095
`3125 thru `3210
`3250 thru `3350
`3070 thru `3095
`3125 thru `3210
`3250 thru `3350
`3070 thru `3095
`3125 thru `3210
`3250 thru `3350
`3070 thru `3095
`3125 thru `3210
`3250 thru `3350
`3125 thru `3210
`3250 thru `3350
170
90
84
150
79
67
140
74
62
73
35
28
33
26
pF
NOTE
6: To avoid possible voltage clipping, the `3125 is tested with V
D
= -98 V.
TISP3070H3SL THRU TISP3095H3SL, TISP3125H3SL THRU TISP3210H3SL
TISP3250H3SL THRU TISP3350H3SL
DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
4
JANUARY 1999 - REVISED MAY 1999
P R O D U C T I N F O R M A T I O N
electrical characteristics for the R and T terminals, T
A
= 25C
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
I
DRM
Repetitive peak off-
state current
V
D
= 2V
DRM
5
A
V
(BO)
Breakover voltage
dv/dt = 750 V/ms,
R
SOURCE
= 300
`3070
`3080
`3095
`3125
`3135
`3145
`3180
`3210
`3250
`3290
`3350
140
160
190
250
270
290
360
420
500
580
700
V
V
(BO)
Impulse breakover
voltage
dv/dt
1000 V/s, Linear voltage ramp,
Maximum ramp value = 500 V
di/dt = 20 A/s, Linear current ramp,
Maximum ramp value = 10 A
`3070
`3080
`3095
`3125
`3135
`3145
`3180
`3210
`3250
`3290
`3350
156
176
206
268
288
308
378
440
252
604
724
V
thermal characteristics
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
R
JA
Junction to free air thermal resistance
EIA/JESD51-3 PCB, I
T
= I
TSM(1000)
,
T
A
= 25 C, (see Note 7)
50
C/W
NOTE
7: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
5
JANUARY 1999 - REVISED MAY 1999
TISP3070H3SL THRU TISP3095H3SL, TISP3125H3SL THRU TISP3210H3SL
TISP3250H3SL THRU TISP3350H3SL
DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
P R O D U C T I N F O R M A T I O N
PARAMETER MEASUREMENT INFORMATION
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR TERMINAL PAIRS
-v
V
DRM
I
DRM
V
D
I
H
I
T
V
T
I
TSM
I
TSP
V
(BO)
I
(BO)
I
D
Quadrant I
Switching
Characteristic
+v
+i
V
(BO)
I
(BO)
V
D
I
D
I
H
I
T
V
T
I
TSM
I
TSP
-i
Quadrant III
Switching
Characteristic
PM4XAAC
V
DRM
I
DRM
V
D
= 50 V and I
D
= 10 A
used for reliability release
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