1
SEPTEMBER 2001 - REVISED FEBRUARY 2003
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP3xxxT3BJ Overvoltage Protector Series
TISP3070T3BJ THRU TISP3395T3BJ
DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Description
Dual High Current Protectors in a Space Efficient Package
- 2 x 100 A 10/560 Current Rating
- Modified 3-pin SMB (DO-214AA) Package
50 % Space Saving over Two SMBs
- Y Configurations with Two SMB Packages
2 x 80 A, 10/1000 .................... TISP3xxxT3BJ + TISP4xxxJ1BJ
2 x 100 A, 10/700 ................... TISP3xxxT3BJ + TISP4xxxH3BJ
Ion-Implanted Breakdown Region
- Precise and Stable Voltage
- Low Voltage Overshoot under Surge
These dual bidirectional thyristor devices protect central office, access and customer premise equipment against overvoltages on the telecom
line. The TISP3xxxT3BJ is available in a wide range of voltages and has an 80 A 10/1000 current rating. These protectors have been specified
mindful of the following standards and recommendations: GR-1089-CORE, TIA/EIA-IS-968, UL 60950, EN 60950, IEC 60950, ITU-T K.20, K.21
and K.45. The TISP3350T3BJ meets the FCC Part 68 "B" ringer voltage requirement (V
DRM
= 275 V). Housed in a 3-pin modified SMB
(DO-214AA) package, the TISP3xxxT3BJ range is space efficient solution for protection designs of 80 A or less which use multiple SMBs.
These devices allow signal voltages, without clipping, up to the maximum off-state voltage value, V
DRM
, see Figure 1. Voltages above V
DRM
are
limited and will not exceed the breakover voltage, V
(BO)
, level. If sufficient current flows due to the overvoltage, the device switches into a low-
voltage on-state condition, which diverts the current from the overvoltage through the device. When the diverted current falls below the
holding current, I
H
, level the device switches off and restores normal system operation.
How to Order
Device Symbol
SMB Package (Top View)
Rated for International Surge Wave Shapes
Device
V
DRM
V
V
(BO)
V
TISP3070T3
58
70
TISP3080T3
65
80
TISP3095T3
75
95
TISP3115T3
90
115
TISP3125T3
100
125
TISP3145T3
120
145
TISP3165T3
135
165
TISP3180T3
145
180
TISP3200T3
155
200
TISP3219T3
180
219
TISP3250T3
190
250
TISP3290T3
220
290
TISP3350T3
275
350
TISP3395T3
320
395
MDXXCJA
1
3
2
3
(T or R)
SD3TA A
1
(T or R)
2
(G)
Wave Shape
Standard
I
PPSM
A
2/10
GR-1089-CORE
250
8/20
IEC 61000-4-5
250
10/160
TIA/EIA-IS-968 (FCC Part 68)
150
10/700
ITU-T K.20/.21/.45
120
10/560
TIA/EIA-IS-968 (FCC Part 68)
100
10/1000
GR-1089-CORE
80
Device
Package
Carrier
Order As
TISP3xxxT3BJ
BJ (3-pin modified SMB/DO-214AA J-Bend)
R (Embossed Tape Reeled)
TISP3xxxT3BJR
Insert xxx value corresponding to protection voltages of 070, 080, 095, 115, etc.
............................................ UL Recognized Components
2
SEPTEMBER 2001 - REVISED FEBRUARY 2003
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Rating
Symbol
Value
Unit
Repetitive peak off-state voltage, (terminals 1-2 and 3-2)
'3070
'3080
'3095
'3115
'3125
'3145
'3165
'3180
'3200
'3219
'3250
'3290
'3350
'3395
V
DRM
58
65
75
90
100
120
135
145
155
180
190
220
275
320
V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
I
PPSM
A
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)
2x250
8/20 (IEC 61000-4-5, combinat ion wave generator, 1.2/50 voltage wave shape)
2x250
10/160 (TIA/EIA-IS-968 (replaces FCC Part 68), 10/160
s voltage wave shape)
2x150
5/310 (ITU-T K.44, 10/700
s voltage wave shape used in K.20/.45/.21)
2x120
5/320 (TIA/EIA-IS-968 (replaces FCC Part 68), 9/720
s voltage wave shape)
2x120
10/560 (TIA/EIA-IS-968 (replaces FCC Part 68), 10/560
s voltage wave shape)
2x100
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)
2x80
Non-repetitive peak on-state current (see Notes 1 and 2)
I
TSM
2x25
2x30
2x1.2
A
50 Hz, 1 cycle
60 Hz, 1 cycle
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-s tate current, Linear current ramp, Maximum ramp value < 50 A
di
T
/dt
500
A/
s
Junction temperature
T
J
-40 to +150
C
Storage temperature range
T
stg
-65 to +150
C
NOTES: 1. Initially, the device must be in thermal equilibrium with T
J
= 25
C.
2. These non-repetitive rated currents are peak values of either polarity. The rated current values are applied to the terminals 1 and
3 simultaneously (in this case the terminal 2 return current will be the sum of the currents applied to the terminals 1 and 3). The
surge may be repeated after the device returns to its initial conditions.
TISP3xxxT3BJ Overvoltage Protector Series
Recommended Operating Conditions
Absolute Maximum Ratings, TA = 25 C (Unless Otherwise Noted)
Component
Min
Typ
Max
Unit
R1, R2
Series resistor for GR-1089-CORE first-level surge survival
Series resistor for ITU-T recommendation K. 20/.45/.21 (coordination with 400 V GDT at 4 kV)
Series resistor for TIA/EIA-IS-968 (replaces FCC Part 68) 9/720 survival
Series resistor for TIA/EIA-IS-968 (replaces FCC Part 68) 10/560 survival
Series resistor for TIA/EIA-IS-968 (replaces FCC Part 68) 10/160 survival
5
6.4
0
0
2.5
3
SEPTEMBER 2001 - REVISED FEBRUARY 2003
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP3xxxT3BJ Overvoltage Protector Series
Electrical Characteristics for the 1 and 2 or the 3 and 2 Terminals, TA = 25 C
Parameter
Test Conditions
Min
Typ
Max
Unit
I
DRM
Repetitive peak off-
state current
V
D
= V
DRM
T
A
= 25
C
T
A
= 85
C
5
10
A
V
(BO)
AC breakover voltage
dv/dt =
250 V/ms,
R
SOURCE
= 300
'3070
'3080
'3095
'3115
'3125
'3145
'3165
'3180
'3200
'3219
'3250
'3290
'3350
'3395
70
80
95
115
125
145
165
180
200
219
250
290
350
395
V
V
(BO)
Ramp breakover
voltage
dv/dt
1000 V/
s, Linear voltage ramp,
Maximum ramp value =
500 V
di/dt =
20 A/
s, Linear current ramp,
Maximum ramp value =
10 A
'3070
'3080
'3095
'3115
'3125
'3145
'3165
'3180
'3200
'3219
'3250
'3290
'3350
'3395
81
91
107
128
138
159
179
195
215
234
265
304
361
403
V
I
(BO)
Breakover current
dv/dt =
250 V/ms,
R
SOURCE
= 300
800
mA
I
H
Holding current
I
T
=
5 A, di/dt = +/-30 mA/ms
150
mA
dv/dt
Critical rate of rise of
off-state voltage
Linear voltage ramp, Maximum ramp value < 0.85V
DRM
5
kV/
s
I
D
Off-state current
V
D
=
50 V
T
A
= 85
C
10
A
4
SEPTEMBER 2001 - REVISED FEBRUARY 2003
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP3xxxT3BJ Overvoltage Protector Series
Electrical Characteristics for the 1 and 2 or the 3 and 2 Terminals, TA = 25 C (Continued)
C
off
Off-state capacitance
f = 1 MHz,
Vd = 1 V rms, V
D
= 0,
`3070 thru `3095
`3115 thru `3219
`3250 thru `3395
95
69
51
90
63
46
83
59
42
43
29
20
16
114
83
62
108
76
55
100
70
51
51
35
24
19
pF
f = 1 MHz,
Vd = 1 V rms, V
D
= -1 V
`3070 thru `3095
`3115 thru `3219
`3250 thru `3395
f = 1 MHz,
Vd = 1 V rms, V
D
= -2 V
`3070 thru `3095
`3115 thru `3219
`3250 thru `3395
f = 1 MHz,
Vd = 1 V rms, V
D
= -50 V
`3070 thru `3095
`3115 thru `3219
`3250 thru `3395
f = 1 MHz,
Vd = 1 V rms, V
D
= -100 V
(see Note 3)
`3250 thru `3395
NOTE
3: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
third terminal is connected to the guard terminal of the bridge.
Parameter
Test Conditions
Min
Typ
Max
Unit
Thermal Characteristics
Parameter
Test Conditions
Min
Typ
Max
Unit
R
JA
Junction to free air thermal resistance
EIA/JESD51-3 PCB, I
T
= I
TSM(1000)
,
T
A
= 25
C, (see Note 4)
90
C/W
NOTE
4: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
5
SEPTEMBER 2001 - REVISED FEBRUARY 2003
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP3xxxT3BJ Overvoltage Protector Series
Parameter Measurement Information
Figure 1. Voltage-Current Characteristic for Terminal Pairs 1-2 and 3-2
All Measurements are Referenced to Terminal 2
-v
V
DRM
I
DRM
V
D
I
H
I
T
V
T
I
TSM
I
PPSM
V
(BO)
I
D
Quadrant I
I
Switching
Characteristic
Quadrant III
Switching
Characteristic
+v
+i
V
(BO)
V
D
I
D
I
H
I
T
V
T
I
TSM
I
PPSM
-i
PM4XAE
V
DRM
I
DRM
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