13
Push - Pull
LB
100.0
7.5
150.0
0.44 C/W
65
4.8
30.00
1.0
50
0.30
13.00
23.0
440
0.30
70
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Common Source Power Gain
Drain Efficiency
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Source
Voltage
Gate to
Source
Voltage
-65 C to 150 C
C
A
V
Load Mismatch Tolerance
VSWR
Drain to
Gate
Voltage
Relative
0.80
0.25
Ids =
mA, Vgs = 0V
V, Vgs = 0V
Ciss
Crss
Coss
Vds =
Idq =
A, Vds = V, F =
0.80
Bvdss
Idss
Drain Breakdown Voltage
V
mA
pF
pF
pF
Common Source Output Capacitance
Common Source Feedback Capacitance
Idq =
Idq = 0.80
500
Vgs = 20V, Ids =
Rdson
Saturation Resistance
Forward Transconductance
gM
Vds = 10V, Vgs = 5V
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
500
500
Common Source Input Capacitance
70
V
Igss
Vgs
Idsat
Zero Bias Drain Current
Gate Leakage Current
Gate Bias for Drain Current
Saturation Current
1
7
uA
V
Mho
Ohm
Amp
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
TEST CONDITIONS
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
RF CHARACTERISTICS ( 175.0
ABSOLUTE MAXIMUM RATINGS ( T =
Gps
28.0
A, Vds = V, F =
A, Vds = V, F =
28.0
28.0
Watts
V
1
MHz
MHz
MHz
Watts
Package Style
175.0
Vds = 0V Vgs = 30V
Vgs = 20V, Vds = 10V
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
General Description
28.0
Vds =
A, Vgs = Vds
Ids =
A
dB
%
o
o
o
o
o
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" process features
low feedback and output capacitances,
resulting in high F transistors with high
input impedance and high efficiency.
TM
t
SILICON GATE ENHANCEMENT MODE
RF POWER
TRANSISTOR
LDMOS
Vgs = 0V, F = 1 MHz
28.0
Vds =
Vgs = 0V, F = 1 MHz
28.0
Vds =
Vgs = 0V, F = 1 MHz
28.0
REVISION 07/17/2003
20
25 C )
WATTS OUTPUT )
200
polyfet rf devices
LB501
5:1
L 5 B 1 D IE ID , G M v s V G
1
1 0
1 0 0
0
2
4
6
8
1 0
1 2
1 4
V g s in V o l t s
G
gM
Id
VDS=10V
L 5 1 D IE C A P A C IT A N C E
1
10
100
1000
0
5
10
15
20
25
30
V D S IN V O L T S
Coss
Ciss
Crss
LB501 Vdd=28V Idq=800mA Pout=160W
Freq(MHz)
500
3.1
Zin
-j0.6
3.6
Zout
+j2.6
L B 5 0 1 F = 5 0 0 M H z ; V d s = 2 8 V d c , Id q = 1 . 2 A
0
30
60
90
120
150
180
210
0
4
8
12
16
20
P in in W a tts
10
11
12
13
14
15
16
17
E ffic ie n c y @ 180W = 55%
Pout
Gain
POLYFET RF DEVICES
POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
ID & GM VS VGS
IV CURVE
Zin Zout
PACKAGE DIMENSIONS IN INCHES
LB501
L5B 1 DIE
0
5
10
15
20
25
30
0
2
4
6
8
10
12
14
16
18
20
VDS IN VOLTS
ID IN AMPS
vg=2v
Vg=4v
Vg=6v
vg=8v
vg=10v
vg=12v
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
REVISION 07/17/2003
Tolerance .XX +/-0.01 .XXX +/-.005 inches
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