RF CHARACTERISTICS ( WATTS OUTPUT )
45
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
45 Watts Single Ended
Package Style LX2
HIGH EFFICIENCY, LINEAR,
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
o
Total
Device
Junction to
Case Thermal
Maximum
Junction
Storage
Temperature
DC Drain
Current
Drain to
Gate
Drain to
Source
Gate to
Source
120 Watts
1.25
C
o
200
-65
to 150
6 A
V
V
V
70
70
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Gps
VSWR
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
dB
%
Relative
11
55
1.2
20:1
Idq =
Idq =
Idq =
1.2
1.2
A,
A,
A,
28.0
Vds =
V,
28.0
Vds =
V,
28.0
Vds =
V,
F = 1000 MHz
F = 1000 MHz
F = 1000 MHz
Bvdss
Idss
Igss
Vgs
gM
Rdson
Idsat
Ciss
Crss
Coss
Drain Breakdown Voltage
Zero Bias Drain Current
Gate Leakage Current
Gate Bias for Drain Current
Forward Transconductance
Saturation Resistance
Saturation Current
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
65
3
1
7
1
2.4
0.35
16.5
90
3
45
Mho
Ohm
Amp
pF
V
V
pF
pF
mA
uA
0.2
Ids =
A,
Vgs = 0V
28.0
Vds =
V,
Vgs = 0V
Vds = 0 V,
Vgs = 30V
0.3
Ids =
A,
Vgs = Vds
Vds = 10V, Vgs = 5V
Vgs = 20V, Ids = 7.5
Vgs = 20V, Vds = 10V
28.0
Vds =
V, Vgs = 0V, F = 1 MHz
A
28.0
Vds =
V, Vgs = 0V, F = 1 MHz
28.0
Vds =
V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
REVISION
SILICON GATE ENHANCEMENT MODE
RF POWER
HIGH GAIN, LOW NOISE
"Polyfet" process features low
feedback and output capacitances
resulting in high F transistors with
high input impedance and high
efficiency.
t
TM
C
o
C
o
C/W
o
LX803
polyfet rf devices
Dissipation
Resistance
Temperature
Voltage
Voltage
Voltage
8/31/99
LDMOS TRANSISTOR
20
LX803 POUT VS PIN F=1000 MHZ; IDQ=1.2A; VDS=28V
10
15
20
25
30
35
40
45
50
0
0.5
1
1.5
2
2.5
3
3.5
4
PIN IN WATTS
10.00
11.00
12.00
13.00
14.00
15.00
POUT
GAIN
Efficiency = 60%
POUT VS PIN GRAPH
LX803
L2A 3DIE CAPACITANCE
1
10
100
1000
0
5
10
15
20
25
30
VDS IN VOLTS
Coss
Ciss
Crss
L2B 3 DIE IV
0
2
4
6
8
10
12
14
16
18
0
2
4
6
8
10
12
14
16
18
20
VDS IN VOLTS
ID IN AMPS
vg=2v
Vg=4v
Vg=6v
vg=8v
vg=10v
vg=12v
L2B 3 DICE ID, GM vs VG
0.1
1
10
100
0
2
4
6
8
10
12
14
Vgs in Volts
ID
GM
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
CAPACITANCE VS VOLTAGE
IV CURVE
ID AND GM VS VGS
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
REVISION 8/31/99
Tolerance 0.XX +/- 0.01 0.XXX +/- 0.005 inches
PDF 
ZIP