RECTIFIER DIODE
AR1104
Repetitive voltage up to
2900
V
Mean forward current
1680
A
Surge current
17.9
kA
FINAL SPECIFICATION
mag 02 - ISSUE : 05
Symbol
Characteristic
Conditions
Tj
[C]
Value
Unit
BLOCKING
V
RRM
Repetitive peak reverse voltage
175
2900
V
V
RSM
Non-repetitive peak reverse voltage
175
3000
V
I
RRM
Repetitive peak reverse current
V=VRRM
175
50
mA
CONDUCTING
I
F (AV)
Mean forward current
180 sin ,50 Hz, Th=55C, double side cooled
1680
A
I
F (AV)
Mean forward current
180 sin ,50 Hz, Tc=85C, double side cooled
1600
A
I
FSM
Surge forward current
Sine wave, 10 ms
175
17.9
kA
I t
I t
without reverse voltage
1602 x 1E3
As
V
FM
Forward voltage
Forward current =
1800 A
25
1.30
V
V
F(TO)
Threshold voltage
175
0.85
V
r
F
Forward slope resistance
175
0.260
mohm
SWITCHING
t rr
Reverse recovery time
s
Q rr
Reverse recovery charge
175
C
I rr
Peak reverse recovery current
A
MOUNTING
R
th(j-h)
Thermal impedance, DC
Junction to heatsink, double side cooled
37
C/kW
R
th(c-h)
Thermal impedance
Case to heatsink, double side cooled
7
C/kW
T
j
Operating junction temperature
-30 / 175
C
F
Mounting force
11.8
/ 13.2
kN
Mass
300
g
ORDERING INFORMATION : AR1104 S 29
standard specification
VRRM/100
POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519
Sales Office:
Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
AR1104 RECTIFIER DIODE
FINAL SPECIFICATION mag 02 - ISSUE : 05
DISSIPATION CHARACTERISTICS
SQUARE WAVE
DC
180
120
90
60
30
0
500
1000
1500
2000
2500
3000
3500
0
500
1000
1500
2000
2500
I
F(AV)
[A]
P
F(AV)
[W]
180
120
90
60
30
50
70
90
110
130
150
170
190
0
500
1000
1500
2000
2500
I
F(AV)
[A]
Th [C]
DC
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
AR1104 RECTIFIER DIODE
FINAL SPECIFICATION mag 02 - ISSUE : 05
DISSIPATION CHARACTERISTICS
SINE WAVE
180
120
90
60
30
0
500
1000
1500
2000
2500
3000
3500
0
500
1000
1500
2000
2500
I
F(AV)
[A]
P
F(AV)
[W]
120
90
60
30
50
70
90
110
130
150
170
190
0
500
1000
1500
2000
2500
I
F(AV)
[A]
Th [C]
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
AR1104 RECTIFIER DIODE
FINAL SPECIFICATION mag 02 - ISSUE : 05
Distributed by
FORWARD CHARACTERISTIC
Tj = 175 C
0
1000
2000
3000
4000
5000
6000
0.6
1.1
1.6
2.1
2.6
Forward Voltage [V]
Forward Current [A]
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
0.0
5.0
10.0
15.0
20.0
25.0
30.0
35.0
40.0
0.001
0.01
0.1
1
10
100
t[s]
Zth j-h [C/kW]
SURGE CHARACTERISTIC
Tj = 175 C
0
2
4
6
8
10
12
14
16
18
20
1
10
100
n cycles
ITSM [kA]
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm
and roughness < 2 m.
In the interest of product improvement POSEICO SPA reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
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