RECTIFIER DIODE
AR649
Repetitive voltage up to
2500
V
Mean forward current
4645
A
Surge current
45
kA
TARGET SPECIFICATION
nov 02 - ISSUE : 03
Symbol
Characteristic
Conditions
Tj
[C]
Value
Unit
BLOCKING
V
RRM
Repetitive peak reverse voltage
175
2500
V
V
RSM
Non-repetitive peak reverse voltage
175
2600
V
I
RRM
Repetitive peak reverse current
V=VRRM
175
100
mA
CONDUCTING
I
F (AV)
Mean forward current
180 sin ,50 Hz, Th=55C, double side cooled
4645
A
I
F (AV)
Mean forward current
180 sin ,50 Hz, Tc=85C, double side cooled
4515
A
I
FSM
Surge forward current
Sine wave, 10 ms
175
45
kA
I t
I t
without reverse voltage
10125 x 1E3
As
V
FM
Forward voltage
Forward current =
2000 A
175
0.90
V
V
F(TO)
Threshold voltage
175
0.70
V
r
F
Forward slope resistance
175
0.100
mohm
SWITCHING
t rr
Reverse recovery time
s
Q rr
Reverse recovery charge
175
C
I rr
Peak reverse recovery current
A
MOUNTING
R
th(j-h)
Thermal impedance, DC
Junction to heatsink, double side cooled
14
C/kW
R
th(c-h)
Thermal impedance
Case to heatsink, double side cooled
3
C/kW
T
j
Operating junction temperature
-30 / 175
C
F
Mounting force
35.0
/ 40.0
kN
Mass
850
g
ORDERING INFORMATION : AR649 S 25
standard specification
VRRM/100
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519
Sales Office:
Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510
AR649 RECTIFIER DIODE
TARGET SPECIFICATION nov 02 - ISSUE : 03
DISSIPATION CHARACTERISTICS
SQUARE WAVE
DC
180
60
30
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
0
1000
2000
3000
4000
5000
6000
7000
I
F(AV)
[A]
P
F(AV)
[W]
90
120
DC
90
60
30
50
70
90
110
130
150
170
190
0
1000
2000
3000
4000
5000
6000
7000
I
F(AV)
[A]
Th [C]
120
180
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
AR649 RECTIFIER DIODE
TARGET SPECIFICATION nov 02 - ISSUE : 03
DISSIPATION CHARACTERISTICS
SINE WAVE
180
120
90
60
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
0
1000
2000
3000
4000
5000
6000
I
F(AV)
[A]
P
F(AV)
[W]
30
180
120
90
60
30
50
70
90
110
130
150
170
190
0
1000
2000
3000
4000
5000
6000
I
F(AV)
[A]
Th [C]
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
AR649 RECTIFIER DIODE
TARGET SPECIFICATION nov 02 - ISSUE : 03
Distributed by
FORWARD CHARACTERISTIC
Tj = 175 C
0
2000
4000
6000
8000
10000
12000
14000
0.6
1.1
1.6
2.1
Forward Voltage [V]
Forward Current [A]
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
0.001
0.01
0.1
1
10
100
t[s]
Zth j-h [C/kW]
SURGE CHARACTERISTIC
Tj = 175 C
0
5
10
15
20
25
30
35
40
45
50
1
10
100
n cycles
ITSM [kA]
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm
and roughness < 2 m.
In the interest of product improvementPOSEICO SpA reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
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