RECTIFIER DIODE
AR709
Repetitive voltage up to
1000
V
Mean forward current
8710
A
Surge current
85
kA
FINAL SPECIFICATION
set 02 - ISSUE : 03
Symbol
Characteristic
Conditions
Tj
[C]
Value
Unit
BLOCKING
V
RRM
Repetitive peak reverse voltage
190
1000
V
V
RSM
Non-repetitive peak reverse voltage
190
1100
V
I
RRM
Repetitive peak reverse current
V=VRRM
190
200
mA
CONDUCTING
I
F (AV)
Mean forward current
180 sin ,50 Hz, Th=55C, double side cooled
8710
A
I
F (AV)
Mean forward current
180 sin ,50 Hz, Tc=85C, double side cooled
8420
A
I
FSM
Surge forward current
Sine wave, 10 ms
190
85
kA
I t
I t
without reverse voltage
36125 x 1E3
As
V
FM
Forward voltage
Forward current =
6000 A
25
1.14
V
V
F(TO)
Threshold voltage
190
0.70
V
r
F
Forward slope resistance
190
0.033
mohm
SWITCHING
t rr
Reverse recovery time
s
Q rr
Reverse recovery charge
190
C
I rr
Peak reverse recovery current
A
MOUNTING
R
th(j-h)
Thermal impedance, DC
Junction to heatsink, double side cooled
11
C/kW
R
th(c-h)
Thermal impedance
Case to heatsink, double side cooled
2
C/kW
T
j
Operating junction temperature
-30 / 190
C
F
Mounting force
46.0
/ 54.0
kN
Mass
1700
g
ORDERING INFORMATION : AR709 S 10
standard specification
VRRM/100
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519
Sales Office:
Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510
AR709 RECTIFIER DIODE
FINAL SPECIFICATION set 02 - ISSUE : 03
DISSIPATION CHARACTERISTICS
SQUARE WAVE
DC
180
120
90
60
30
0
2000
4000
6000
8000
10000
12000
14000
0
2000
4000
6000
8000
10000
12000
I
F(AV)
[A]
P
F(AV)
[W]
DC
180
120
90
60
30
50
70
90
110
130
150
170
190
0
2000
4000
6000
8000
10000
12000
I
F(AV)
[A]
Th [C]
POSEICO SPA
POwer SEmiconduc tors Italian COrporation
POSEICO
AR709 RECTIFIER DIODE
FINAL SPECIFICATION set 02 - ISSUE : 03
DISSIPATION CHARACTERISTICS
SINE WAVE
180
120
90
60
30
0
2000
4000
6000
8000
10000
12000
14000
0
2000
4000
6000
8000
10000
12000
I
F(AV)
[A]
P
F(AV)
[W]
180
120
90
60
30
50
70
90
110
130
150
170
190
210
0
2000
4000
6000
8000
10000
12000
I
F(AV)
[A]
Th [C]
POSEICO SPA
POwer SEmiconduc tors Italian COrporation
POSEICO
AR709 RECTIFIER DIODE
FINAL SPECIFICATION set 02 - ISSUE : 03
Distributed by
FORWARD CHARACTERISTIC
Tj = 190 C
0
5000
10000
15000
20000
25000
30000
0.6
0.8
1
1.2
1.4
1.6
Forward Voltage [V]
Forward Current [A]
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
0.0
2.0
4.0
6.0
8.0
10.0
12.0
0.001
0.01
0.1
1
10
100
t[s]
Zth j-h [C/kW]
SURGE CHARACTERISTIC
Tj = 190 C
0
10
20
30
40
50
60
70
80
90
1
10
100
n cycles
ITSM [kA]
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm
and roughness < 2 m.
In the interest of product improvement POSEICO SPA reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
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