RECTIFIER DIODE
AR912
Repetitive voltage up to
5600
V
Mean forward current
645
A
Surge current
6.3
kA
FINAL SPECIFICATION
nov 02 - ISSUE : 05
Symbol
Characteristic
Conditions
Tj
[C]
Value
Unit
BLOCKING
V
RRM
Repetitive peak reverse voltage
150
5600
V
V
RSM
Non-repetitive peak reverse voltage
150
5700
V
I
RRM
Repetitive peak reverse current
V=VRRM
150
50
mA
CONDUCTING
I
F (AV)
Mean forward current
180 sin ,50 Hz, Th=55C, double side cooled
645
A
I
F (AV)
Mean forward current
180 sin ,50 Hz, Tc=85C, double side cooled
580
A
I
FSM
Surge forward current
Sine wave, 10 ms
150
6.3
kA
I t
I t
without reverse voltage
198 x 1E3
As
V
FM
Forward voltage
Forward current =
1200 A
25
2.10
V
V
F(TO)
Threshold voltage
150
1.00
V
r
F
Forward slope resistance
150
1.150
mohm
SWITCHING
t rr
Reverse recovery time
s
Q rr
Reverse recovery charge
150
C
I rr
Peak reverse recovery current
A
MOUNTING
R
th(j-h)
Thermal impedance, DC
Junction to heatsink, double side cooled
52
C/kW
R
th(c-h)
Thermal impedance
Case to heatsink, double side cooled
10
C/kW
T
j
Operating junction temperature
-30 / 150
C
F
Mounting force
8.4
/ 9.4
kN
Mass
280
g
ORDERING INFORMATION : AR912 S 56
standard specification
VRRM/100
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519
Sales Office:
Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510
AR912 RECTIFIER DIODE
FINAL SPECIFICATION nov 02 - ISSUE : 05
DISSIPATION CHARACTERISTICS
SQUARE WAVE
DC
180
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0
200
400
600
800
1000
I
F(AV)
[A]
P
F(AV)
[W]
60
30
90
120
DC
90
60
30
50
60
70
80
90
100
110
120
130
140
150
0
200
400
600
800
1000
I
F(AV)
[A]
Th [C]
120
180
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
AR912 RECTIFIER DIODE
FINAL SPECIFICATION nov 02 - ISSUE : 05
DISSIPATION CHARACTERISTICS
SINE WAVE
120
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0
200
400
600
800
1000
I
F(AV)
[A]
P
F(AV)
[W]
30
60
90
180
180
60
30
50
70
90
110
130
150
170
0
200
400
600
800
1000
I
F(AV)
[A]
Th [C]
120
90
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
AR912 RECTIFIER DIODE
FINAL SPECIFICATION nov 02 - ISSUE : 05
Distributed by
FORWARD CHARACTERISTIC
Tj = 150 C
0
500
1000
1500
2000
2500
0.6
1.1
1.6
2.1
2.6
3.1
3.6
Forward Voltage [V]
Forward Current [A]
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
0.0
10.0
20.0
30.0
40.0
50.0
60.0
0.001
0.01
0.1
1
10
100
t[s]
Zth j-h [C/kW]
SURGE CHARACTERISTIC
Tj = 150 C
0
1
2
3
4
5
6
7
1
10
100
n cycles
ITSM [kA]
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm
and roughness < 2 m.
In the interest of product improvement POSEICO SpA reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
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